Global Patent Index - EP 4356428 A1

EP 4356428 A1 20240424 - METHOD FOR PRODUCING A NATIVE EMISSION MATRIX

Title (en)

METHOD FOR PRODUCING A NATIVE EMISSION MATRIX

Title (de)

VERFAHREN ZUR HERSTELLUNG EINER NATIVEN EMISSIONSMATRIX

Title (fr)

PROCEDE POUR FABRIQUER UNE MATRICE A EMISSION NATIVE

Publication

EP 4356428 A1 20240424 (FR)

Application

EP 22735216 A 20220613

Priority

  • FR 2106386 A 20210616
  • FR 2022051119 W 20220613

Abstract (en)

[origin: WO2022263756A1] The invention relates to a method for producing a native emission matrix, which comprises the following steps: a) providing a base structure (10) comprising, successively, a substrate (11), a GaN layer (12), a doped In(x)GaN layer (13) where x is from 0 to 8%, and an unintentionally doped In(x)GaN epitaxial regrowth layer (14); b) structuring mesas in the base structure, the mesas comprising a portion of the doped In(x)GaN layer (13) and the unintentionally doped In(x)GaN epitaxial regrowth layer (14), whereby the mesas are electrically interconnected; c) electrochemically forming pores in the doped In(x)GaN layer (13); and d) creating a first LED structure (100) and a second LED structure (200) on the mesas, whereby a first LED and a second LED having first and second emission wavelengths, respectively, are obtained, and a native emission matrix is ​​formed.

IPC 8 full level

H01L 27/15 (2006.01); H01L 33/16 (2010.01)

CPC (source: EP)

H01L 27/156 (2013.01); H01L 33/16 (2013.01)

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

Designated extension state (EPC)

BA ME

Designated validation state (EPC)

KH MA MD TN

DOCDB simple family (publication)

WO 2022263756 A1 20221222; CN 117678074 A 20240308; EP 4356428 A1 20240424; FR 3124312 A1 20221223

DOCDB simple family (application)

FR 2022051119 W 20220613; CN 202280048089 A 20220613; EP 22735216 A 20220613; FR 2106386 A 20210616