EP 4358406 A2 20240424 - OVERTEMPERATURE PROTECTION CIRCUIT
Title (en)
OVERTEMPERATURE PROTECTION CIRCUIT
Title (de)
ÜBERHITZUNGSSCHUTZSCHALTUNG
Title (fr)
CIRCUIT DE PROTECTION CONTRE LES SURCHAUFFES
Publication
Application
Priority
FR 2210661 A 20221017
Abstract (en)
[origin: US2024136350A1] The present disclosure concerns overtemperature protection circuit formed inside and on top of a monolithic semiconductor substrate having a surface covered with a gallium nitride layer, comprising:a first resistor having a first positive temperature coefficient and being arranged in said gallium nitride layer; anda second resistor having a second temperature coefficient different from the first coefficient.
Abstract (fr)
La présente description concerne un circuit de protection contre les surchauffes (1800) formé dans et sur un substrat semiconducteur monolithique ayant une face recouverte d'une couche de Nitrure de Gallium, comprenant :- une première résistance (R1802) ayant un premier coefficient de température positif et étant disposée dans ladite couche de Nitrure de Gallium ; et- une deuxième résistance (R1801) ayant un deuxième coefficient de température différent du premier coefficient.
IPC 8 full level
H03K 17/18 (2006.01); G01R 31/26 (2020.01); H01L 27/07 (2006.01); H02H 5/04 (2006.01)
CPC (source: EP US)
G01R 31/2628 (2013.01 - EP); H01L 21/8252 (2013.01 - EP); H01L 27/0285 (2013.01 - US); H01L 27/0288 (2013.01 - US); H01L 27/0629 (2013.01 - EP); H01L 27/0802 (2013.01 - EP); H01L 28/24 (2013.01 - US); H01L 29/2003 (2013.01 - US); H01L 29/7787 (2013.01 - US); H02H 5/042 (2013.01 - EP); H03K 17/18 (2013.01 - EP); H01L 28/20 (2013.01 - EP); H01L 29/2003 (2013.01 - EP); H01L 29/41758 (2013.01 - EP); H01L 29/41766 (2013.01 - EP); H01L 29/42356 (2013.01 - EP); H01L 29/7786 (2013.01 - EP); H03K 2017/0806 (2013.01 - EP)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC ME MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
EP 4358406 A2 20240424; EP 4358406 A3 20240612; FR 3140988 A1 20240419; US 2024136350 A1 20240425
DOCDB simple family (application)
EP 23201334 A 20231003; FR 2210661 A 20221017; US 202318485190 A 20231011