EP 4364200 A1 20240508 - OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING SAME
Title (en)
OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING SAME
Title (de)
OPTOELEKTRONISCHE VORRICHTUNG UND VERFAHREN ZUR HERSTELLUNG DAVON
Title (fr)
DISPOSITIF OPTOÉLECTRONIQUE ET PROCÉDÉ DE FABRICATION
Publication
Application
Priority
- FR 2107034 A 20210630
- EP 2022067146 W 20220623
Abstract (en)
[origin: WO2023274828A1] The invention relates to a transfer structure (501, 502, 503) comprising a substrate (401, 402, 403) and an optoelectronic device (301, 302, 303) attached to the substrate, the substrate comprising a base portion (42) having a substrate face (400), and at least one element (41) projecting from the substrate face (400), the optoelectronic device having a first face (301) comprising a central zone (301c) and a peripheral zone (301p) surrounding the central zone, the transfer structure being characterised in that the at least one projecting element (41) of the substrate is attached to the peripheral zone (301p) of the first face of the optoelectronic device. The invention also relates to a method for transferring optoelectronic devices, which method is based on the implementation of transfer structures.
IPC 8 full level
H01L 25/075 (2006.01); H01L 21/673 (2006.01); H01L 33/00 (2010.01)
CPC (source: EP US)
H01L 21/67144 (2013.01 - US); H01L 25/0753 (2013.01 - EP); H01L 33/0093 (2020.05 - US); H01L 21/67333 (2013.01 - EP); H01L 33/0093 (2020.05 - EP)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
FR 3124889 A1 20230106; EP 4364200 A1 20240508; US 2024313152 A1 20240919; WO 2023274828 A1 20230105
DOCDB simple family (application)
FR 2107034 A 20210630; EP 2022067146 W 20220623; EP 22738581 A 20220623; US 202218575609 A 20220623