Global Patent Index - EP 4388593 A1

EP 4388593 A1 20240626 - METHOD FOR SINGULATING SEMICONDUCTOR COMPONENTS

Title (en)

METHOD FOR SINGULATING SEMICONDUCTOR COMPONENTS

Title (de)

VERFAHREN ZUM VEREINZELN VON HALBLEITERBAUELEMENTEN

Title (fr)

PROCÉDÉ DE SÉPARATION DE COMPOSANTS SEMI-CONDUCTEURS

Publication

EP 4388593 A1 20240626 (DE)

Application

EP 22764787 A 20220815

Priority

  • DE 102021121684 A 20210820
  • EP 2022072777 W 20220815

Abstract (en)

[origin: WO2023021002A1] The invention relates to a method for singulating semiconductor components (5), comprising a method step A comprising providing a semiconductor workpiece (1), which has a carrier substrate (2) and a plurality of semiconductor components (5), the semiconductor components (5) having: - at least one functional semiconductor layer (3), which is located on a front side of the carrier substrate (2) and which is in the form of a III-V compound semiconductor, and - at least one metal rear contacting layer (4), which is located on a rear side of the carrier substrate (2), and comprising a method step B comprising cutting through the semiconductor workpiece (1) along a plurality of cutting paths in order to singulate the semiconductor components. It is essential that method step B comprises the following method steps: in a method step B1, the metal rear contacting layer (4) of the semiconductor components (5) is cut through on the rear side of the carrier substrate (2) along the cutting paths and a cutting trench (9) is produced on the rear side of the carrier substrate (2), at least in portions of the cutting paths, by means of ablation by laser radiation, and in a method step B2, the carrier substrate (2) is cut through along the cutting paths by energy input into the carrier substrate (2) by means of laser radiation, wherein the carrier substrate (2) is heated below the melting temperature of the carrier substrate (2). The invention also relates to a singulated semiconductor component (2).

IPC 8 full level

H01L 31/18 (2006.01); H01L 21/78 (2006.01)

CPC (source: EP)

H01L 21/78 (2013.01); H01L 31/18 (2013.01); H01L 31/184 (2013.01)

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

Designated extension state (EPC)

BA ME

Designated validation state (EPC)

KH MA MD TN

DOCDB simple family (publication)

DE 102021121684 A1 20230223; EP 4388593 A1 20240626; WO 2023021002 A1 20230223

DOCDB simple family (application)

DE 102021121684 A 20210820; EP 2022072777 W 20220815; EP 22764787 A 20220815