EP 4393009 A1 20240703 - BYPASSED GATE TRANSISTORS HAVING IMPROVED STABILITY
Title (en)
BYPASSED GATE TRANSISTORS HAVING IMPROVED STABILITY
Title (de)
BYPASS-GATE-TRANSISTOREN MIT VERBESSERTER STABILITÄT
Title (fr)
TRANSISTORS À GRILLE CONTOURNÉS AYANT UNE STABILITÉ AMÉLIORÉE
Publication
Application
Priority
- US 202117492032 A 20211001
- US 2022075500 W 20220826
Abstract (en)
[origin: WO2023056145A1] A transistor device includes a plurality of gate fingers that extend in a first direction and are spaced apart from each other in a second direction, each of the gate fingers comprising at least spaced-apart and generally collinear first and second gate finger segments that are electrically connected to each other. The first gate finger segments are separated from the second gate finger segments in the first direction by a gap region that extends in the second direction. A resistor is disposed in the gap region.
IPC 8 full level
H01L 23/482 (2006.01); H01L 29/423 (2006.01); H01L 29/778 (2006.01)
CPC (source: EP)
H01L 23/4821 (2013.01); H01L 23/4824 (2013.01); H01L 29/42316 (2013.01); H01L 29/7786 (2013.01); H01L 29/2003 (2013.01)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
DOCDB simple family (application)
US 2022075500 W 20220826; EP 22769536 A 20220826