EP 4441799 A1 20241009 - PASSIVATION METHOD
Title (en)
PASSIVATION METHOD
Title (de)
PASSIVIERUNGSVERFAHREN
Title (fr)
PROCEDE DE PASSIVATION
Publication
Application
Priority
- FR 2112689 A 20211129
- EP 2022082868 W 20221122
Abstract (en)
[origin: WO2023094403A1] Passivation method comprising the successive steps of: a) providing a structure comprising: - a substrate (1) based on crystalline silicon and having opposing first and second surfaces (10, 11); - first and second oxide films (2, 3); b) applying ultraviolet radiation to the structure, in an ozone atmosphere, so that the first oxide film (2') has: - a thickness strictly greater than that of the second oxide film (3), and/or - a composition closer to the stoichiometric compound; c) forming first and second layers of polysilicon (4, 5) on the first and second oxide films (2', 3), respectively, and comprising phosphorus atoms and boron atoms, respectively ; d) applying a heat treatment at a temperature greater than or equal to the electrical activation temperature of the boron atoms so as to electrically activate the phosphorus atoms and boron atoms at the same time.
IPC 8 full level
H01L 31/18 (2006.01)
CPC (source: EP)
H10F 10/165 (2025.01); H10F 71/128 (2025.01); H10F 77/311 (2025.01)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC ME MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA
Designated validation state (EPC)
KH MA MD TN
DOCDB simple family (publication)
WO 2023094403 A1 20230601; EP 4441799 A1 20241009; FR 3129769 A1 20230602; FR 3129769 B1 20240913
DOCDB simple family (application)
EP 2022082868 W 20221122; EP 22821485 A 20221122; FR 2112689 A 20211129