(19)
(11)EP 2 731 133 A3

(12)EUROPEAN PATENT APPLICATION

(88)Date of publication A3:
01.11.2017 Bulletin 2017/44

(43)Date of publication A2:
14.05.2014 Bulletin 2014/20

(21)Application number: 13191022.6

(22)Date of filing:  31.10.2013
(51)International Patent Classification (IPC): 
H01L 23/48(2006.01)
H01L 21/60(2006.01)
H01L 21/768(2006.01)
H01L 23/485(2006.01)
(84)Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated Extension States:
BA ME

(30)Priority: 13.11.2012 US 201213675297

(71)Applicant: Delta Electronics, Inc.
Taoyuan County 33341 (TW)

(72)Inventors:
  • Tsai, Hsin-Chang
    Taoyuan Hsien 333 (TW)
  • Lee, Chia-Yen
    Taoyuan Hsien 333 (TW)
  • Lee, Peng-Hsin
    Taoyuan Hsien 333 (TW)

(74)Representative: Fuchs Patentanwälte Partnerschaft mbB 
Otto-von-Guericke-Ring 7
65205 Wiesbaden
65205 Wiesbaden (DE)

  


(54)Interconnection structure and fabrication thereof


(57) A method of forming an interconnection structure is disclosed, including providing a substrate having a first side and a second side opposite to the first side, forming a via hole through the substrate, wherein the via hole has a first opening in the first side and a second opening in the second side, forming a first pad covering the first opening, and forming a via structure in the via hole subsequent to forming the first pad, wherein the via structure includes a conductive material and is adjoined to the first pad.







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Search report