(19)
(11)EP 2 956 962 A1

(12)

(43)Date of publication:
23.12.2015 Bulletin 2015/52

(21)Application number: 14707558.4

(22)Date of filing:  12.02.2014
(51)International Patent Classification (IPC): 
H01L 25/065(2006.01)
H01L 25/18(2006.01)
(86)International application number:
PCT/US2014/016081
(87)International publication number:
WO 2014/127032 (21.08.2014 Gazette  2014/34)
(84)Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated Extension States:
BA ME

(30)Priority: 13.02.2013 US 201313766218

(71)Applicant: Qualcomm Incorporated
San Diego, CA 92121-1714 (US)

(72)Inventors:
  • HENDERSON, Brian, M.
    San Diego, CA 92121-1714 (US)
  • GU, Shiqun
    San Diego, CA 92121-1714 (US)

(74)Representative: Loveless, Ian Mark 
Reddie & Grose LLP 16 Theobalds Road
London WC1X 8PL
London WC1X 8PL (GB)

  


(54)SEMICONDUCTOR DEVICE HAVING STACKED MEMORY ELEMENTS AND METHOD OF STACKING MEMORY ELEMENTS ON A SEMICONDUCTOR DEVICE