(19)
(11)EP 2 774 154 A1

(12)

(43)Date of publication:
10.09.2014 Bulletin 2014/37

(21)Application number: 12845057.4

(22)Date of filing:  10.10.2012
(51)International Patent Classification (IPC): 
G11C 11/34(2006.01)
(86)International application number:
PCT/US2012/059623
(87)International publication number:
WO 2013/066584 (10.05.2013 Gazette  2013/19)
(84)Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

(30)Priority: 01.11.2011 US 201113286933

(71)Applicant: Silicon Storage Technology Inc.
San Jose CA 95134 (US)

(72)Inventors:
  • MARKOV, Viktor
    Sunnyvale, CA 94086 (US)
  • YOO, Jong-Won
    Cupertino, CA 95014 (US)
  • NGUYEN, Hung, Quoc
    Fremont, CA 94539 (US)
  • KOTOV, Alexander
    Sunnyvale, CA 94089 (US)

(74)Representative: Betten & Resch 
Theatinerstrasse 8
80333 München
80333 München (DE)

  


(54)A METHOD OF PROGRAMMING A SPLIT GATE NON-VOLATILE FLOATING GATE MEMORY CELL HAVING A SEPARATE ERASE GATE