(19)
(11)EP 1 850 124 A3

(12)EUROPEAN PATENT APPLICATION

(88)Date of publication A3:
21.01.2009 Bulletin 2009/04

(43)Date of publication A2:
31.10.2007 Bulletin 2007/44

(21)Application number: 06124487.7

(22)Date of filing:  21.11.2006
(51)Int. Cl.: 
G01N 27/414  (2006.01)
(84)Designated Contracting States:
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR
Designated Extension States:
AL BA HR MK RS

(30)Priority: 26.04.2006 KR 20060037723

(71)Applicant: Samsung Electronics Co., Ltd.
Suwon-si, Gyeonggi-Do (KR)

(72)Inventors:
  • Shim, Jeo-young
    Gyeonggi-do (KR)
  • Lee, Kyu-sang
    Gyeonggi-do (KR)
  • Yoo, Kyu-tae
    Gyeonggi-do (KR)
  • Chung, Won-seok
    Gyeonggi-do (KR)

(74)Representative: Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät 
Leopoldstrasse 4
80802 München
80802 München (DE)

  


(54)Field effect transistor for detecting ionic material and method of detecting ionic material using the same


(57) A field effect transistor for detecting ionic material and a method of detecting ionic material using the field effect transistor are provided. The field effect transistor for detecting ionic material includes a substrate (21) formed of a semiconductor material; a source region (22) and a drain region (23) spaced apart from each other in the substrate and doped with an opposite conductivity type to that of the substrate; a channel region (24) interposed between the source region and the drain region; an insulating layer (25) disposed on the channel region and formed of an electrically insulating material; a first reference electrode (26) disposed at an edge of the upper portion of the insulating layer; and a second reference electrode (27) disposed to be spaced apart from the insulating layer.