(19) | |
| (11) | EP 0 215 583 A3 |
(12) | EUROPEAN PATENT APPLICATION |
(88) | Date of publication A3: | | 23.08.1989 Bulletin 1989/34 |
(43) | Date of publication A2: | | 25.03.1987 Bulletin 1987/13 |
(22) | Date of filing: 19.08.1986 |
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(84) | Designated Contracting States: | | AT BE CH DE FR GB IT LI LU NL SE |
(30) | Priority: | 18.09.1985 US 777149 02.06.1986 US 869759
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(71) | Applicant: ADVANCED MICRO DEVICES, INC. | | Sunnyvale, CA 94088 (US) |
| (72) | Inventors: | | - Thomas, Mammen
San Jose
California 95120 (US) - Weinberg, Matthew
Mt. View California 94043 (US)
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(74) | Representative: Sanders, Peter Colin Christopher et al | | BROOKES & MARTIN
High Holborn House
52/54 High Holborn London WC1V 6SE London WC1V 6SE (GB) |
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(54) | Bipolar and/or MOS devices fabricated on integrated circuit substrates |
(57) An improved integrated circuit structure is disclosed comprising bipolar and/or MOS devices formed on the same substrate. Bipolar devices, when present, have at least the emitter and the collector contact portions formed from a polysilicon layer which results in raised contacts. The MOS devices are similarly formed with raised gate contact portions formed from the same polysilicon layer. Metal silicide is formed over at least a portion of the base, source, and drain regions to provide conductive paths to the base, source, and drain contacts. In one embodiment, the base, source, and drain contacts are also raised contacts formed from the same polysilicon layer to permit formation of a highly planarized structure with self-aligned contacts formed by planarizing an insulating layer formed over the structure sufficiently to expose the upper surface of the contacts.