(19)
(11)EP 0 224 141 A3

(12)EUROPEAN PATENT APPLICATION

(88)Date of publication A3:
14.06.1989 Bulletin 1989/24

(43)Date of publication A2:
03.06.1987 Bulletin 1987/23

(21)Application number: 86115795.6

(22)Date of filing:  13.11.1986
(51)International Patent Classification (IPC)4H01L 29/08, H01L 23/36
(84)Designated Contracting States:
CH LI SE

(30)Priority: 21.11.1985 US 800251

(71)Applicant: GENERAL ELECTRIC COMPANY
Schenectady New York 12305 (US)

(72)Inventor:
  • Cusano, Dominic Anthony
    Schenectady New York 12309 (US)

(74)Representative: Smith, Thomas Ian Macdonald (GB) et al


 ()


(56)References cited: : 
  
      


    (54)Improved semiconductor power devices


    (57) An improved power semiconductor device can be fabricated by encasing a conventional semiconductor device within a pair of degeneratively doped semicon­ductor heat sink electrodes. Thermal compatibility between the device and the degeneratively doped semi­conductor heat sink electrode avoid thermal stress and allows the device to rapidly dissipate heat to the heat absorbing electrodes. A degeneratively doped heat sink electrode can be attached to the surface device by a eutectic bond and can be used to seal an otherwise exposed surface of the device.







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