| (11) | EP 0 224 141 A3 |
(12) | EUROPEAN PATENT APPLICATION |
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(54) | Improved semiconductor power devices |
(57) An improved power semiconductor device can be fabricated by encasing a conventional semiconductor device within a pair of degeneratively doped semiconductor heat sink electrodes. Thermal compatibility between the device and the degeneratively doped semiconductor heat sink electrode avoid thermal stress and allows the device to rapidly dissipate heat to the heat absorbing electrodes. A degeneratively doped heat sink electrode can be attached to the surface device by a eutectic bond and can be used to seal an otherwise exposed surface of the device. |