(19)
(11)EP 2 310 554 B1

(12)EUROPEAN PATENT SPECIFICATION

(45)Mention of the grant of the patent:
22.02.2012 Bulletin 2012/08

(21)Application number: 09797507.2

(22)Date of filing:  16.07.2009
(51)Int. Cl.: 
C23C 16/509  (2006.01)
C03C 17/00  (2006.01)
C23C 16/54  (2006.01)
(86)International application number:
PCT/EP2009/059155
(87)International publication number:
WO 2010/007133 (21.01.2010 Gazette  2010/03)

(54)

PROCESS AND INSTALLATION FOR DEPOSITING FILMS ONTO A SUBSTRATE

VERFAHREN UND ANLAGE ZUM AUFBRINGEN VON FILMEN AUF EIN SUBSTRAT

PROCESSUS ET INSTALLATION POUR LE DÉPÔT DE FILMS SUR UN SUBSTRAT


(84)Designated Contracting States:
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR

(30)Priority: 16.07.2008 EP 08160507

(43)Date of publication of application:
20.04.2011 Bulletin 2011/16

(73)Proprietor: AGC Flat Glass Europe
1170 Bruxelles (Watermael-Boitsfort) (BE)

(72)Inventors:
  • TIXHON, Eric
    B-4367 Crisnée (BE)
  • LECLERCQ, Joseph
    B-1140 Evere (BE)
  • MICHEL, Eric
    F-57270 Uckange (FR)

(74)Representative: Vandeberg, Marie-Paule L.G. 
Office Kirkpatrick 32, avenue Wolfers
1310 La Hulpe
1310 La Hulpe (BE)


(56)References cited: : 
EP-A- 0 511 044
WO-A-2007/089146
JP-A- 2007 273 915
WO-A-99/04411
JP-A- 2006 316 299
  
      
    Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).


    Description

    Field of the invention



    [0001] The invention relates to a process for depositing films onto an inorganic substrate so as to modify the properties of said substrate. In particular, the invention is aimed at simultaneously depositing films on glass plates.

    [0002] The invention also relates to an installation for applying the process in question, in particular continuously.

    Prior art



    [0003] Various processes are used to deposit thin-film coatings onto various substrates. They differ in particular by the way in which the energy is generated for producing the desired compounds and/or for bonding them to the substrate.

    [0004] The deposition of thin-film coatings is used in various applications, such as electronics, corrosion-resistant and tribological coatings, such as refractory films (titanium or aluminium nitrides, carbides and oxides), coatings having optical (anti-reflection, solar-protection, filter, etc.) properties, coatings providing other particular (antimicrobial, self-cleaning, hydrophilic, hydrophobic, etc.) surface properties, and conductive tin oxide films for various applications (photovoltaics, LEDs, OLEDs, organic photovoltaics, etc.).

    [0005] The substrates in question may be of various types: glass, steel, ceramic, organic polymers, thermoplastics, etc.

    [0006] Four thin-film deposition techniques applicable in particular in the glass field may be mainly distinguished: sol-gel; magnetron sputtering; pyrolytic spraying; and CVD (chemical vapour deposition).

    [0007] CVD consists in sending chemical reactants or precursors, vaporized beforehand, onto a hot substrate, which reactants and precursors decompose by pyrolysis upon contact with the hot substrate.

    [0008] This process is widely applied on-line during the production of float glass.

    [0009] Thus, thin films (the thicknesses of the order of a few tens or hundreds of nm), especially oxides, are obtained. The films obtained are dense and of high purity. In general, they are very stable both chemically and mechanically. The deposition rates are high.

    [0010] However, the range of materials that can be deposited is limited as it is difficult to find precursors that can be volatilized and will pyrolyze within the temperature range (500-750°C) available to glass producers.

    [0011] One possible way of circumventing the substrate temperature and therefore of extending the range of precursors that can be used in CVD, and consequently the range of materials that can be deposited, is to combine conventional CVD (optionally at a lower temperature) with a plasma device.

    [0012] PECVD (plasma-enhanced chemical vapour deposition) may be applied using any plasma: cold plasmas (not in equilibrium) or thermal plasmas (in equilibrium).

    [0013] Cold plasmas are generally preferred. The active species (electrons, ions, metastables, etc.) of the plasma typically possess energies of a few eV and may thus cause dissociation or activation of chemical precursors.

    [0014] To maintain the non-equilibrium plasma, it is often necessary to work at reduced pressure. Most known PECVD techniques therefore use low-pressure plasmas.

    [0015] However, to apply this process for industrial purposes, it is necessary to minimize the costs. There is therefore a growing interest on the part of industrial manufacturers to transfer low-pressure plasma technologies to plasma technologies operating within a pressure range close to atmospheric pressure.

    [0016] Various plasma types are known in plasma technologies:
    « Glow dischage plasma» or homogeneous plasma allows deposition of very homogeneous thin-film coatings and requires a relatively low energy level. However, it is lengthy and must be limited within a restricted frequency field to remain stable. It also allows a more restricted variety of thin-film species.
    Raising the energy level of plasma may cause the outbreak of electric arcs. Placing a dielectric plate between the electrodes allows obtaining an intermediate state between glow discharge and electric arcs, named "filamentary" state. Filaments are intrinsically unstable but carry a high energy level, allowing a reduction of the time of processing and thus to accelerate the speed of the substrate. On the other side, owing to their random production, a paradoxically homogeneous deposition rate of materials is obtained, a very high number (typically, 106 per square centimetre per second) of micro-discharges being produced during a cycle on a given area.

    [0017] It has been endeavoured to marry the potentialities of conventional CVD treatment processes with the potentialities of an atmospheric-pressure plasma process. Our choice was to use a dielectric barrier discharge (DBD). This has the advantage, over the other plasma processes, of operating both at low pressure and at atmospheric pressure, and of allowing continuous treatment on large areas, which implies producing active electrical power in the order of up to one MegaWatt.

    [0018] Such processes have been described for much more reduced power ranges for example in WO 2005/113856 for coating a plastic. WO 2004/013376 describes a plasma CVD process specific for the deposition of photocatalytic TiO2 films. This process requires a glow discharge plasma posttreatment of the deposited coating.

    [0019] In both cases cited, the processes have the major drawback of having a mediocre energy efficiency: most of the power generated is dissipated as a pure loss. The problem is due in large part to the capacitive impedance of the discharge circuit, which is higher the greater the distance between the electrodes (and consequently the distance between the electrodes and a substrate placed therebetween).

    [0020] JP 2006 316299 describes an installation for the two-side coating with films of various compositions.

    [0021] WO 2007/089146 describes a device for the treatment in glow discharge mode of a heat-sensitive surface (triacetyl cellulose). The power levels involved are relatively low (300 to 800 W). This device uses a particular power supply type (pulsed generator). An impedance is employed only for the use of induction coils in parallel and in series, not to stabilize the load but to increase the degree of fragmentation of a precursor generated in the plasma discharge.

    [0022] JP 2007 273915 describes a low-power (500 W) vacuum plasma treatment process provided with an RLC circuit in the secondary. The authors report better efficiency of the treatment when they compensate for being close to resonance of the circuit.

    [0023] EP 511 044 describes an installation for deposition onto only one side of glass volume.

    Summary of the invention



    [0024] A first object of the invention is to improve the energy efficiency of a high-power installation for depositing films onto an inorganic substrate using the DBD process.

    [0025] Another object is to improve the efficiency of deposition without unduly degrading the energy efficiency.

    [0026] Another object of the invention is to ensure that this improvement maintains its efficiency whatever the conditions imposed by various types of manufacture, and especially for substrates of various thicknesses, for different film types, etc.

    [0027] One subject of the invention is a process for depositing a film onto an inorganic substrate, characterized in that it comprises the following operations:
    • a substrate is introduced into or made to run through a reaction chamber in which at least two electrodes are placed, at least one dielectric barrier being placed between these at least two electrodes;
    • an amplitude- and frequency-stabilized power supply of at least 100 kW that includes an HF transformer, to the terminals of the secondary of which the at least two electrodes are connected, is employed;
    • a stabilized high-frequency voltage is generated in the secondary circuit of this transformer, said voltage being such that it generates a filamentary plasma between the at least two electrodes;
    • an adjustable inductor (L) placed in parallel with the intrinsic inductor of the circuit comprising the at least two electrodes is employed so as to reduce the phase shift between the voltage and the current that are generated in the secondary of the transformer;
    • a mixture is introduced into the reaction chamber, the composition of said mixture being such that, upon contact with the plasma, it decomposes and generates species capable of being deposited as a film onto the corresponding side of the substrate;
    • the voltage and/or the frequency delivered by the stabilized power supply and/or the inductance of the adjustable inductor (L) placed in parallel with the circuit comprising the at least two electrodes are/is adapted at the start of or during the process, so as to increase the active power/reactive power ratio;
    • the voltage and/or the frequency delivered by the generator circuit and/or the inductance of the inductor (L) are/is adapted so as to promote the production of harmonics extending the time during which the voltage remains above that for sustaining the electrical discharge and, as a consequence, the time during which the current flows between the electrodes; and
    • the substrate is kept in the chamber for a period of time sufficient to obtain a film of desired thickness on at least one of the sides of said substrate.


    [0028] It should be noted that the process of the invention is defined in terms of "operations" rather than of "steps", that is to say the succession of operations is not necessarily carried out in the order in which they are indicated above.

    [0029] A first advantage of the process of the invention is that the energy supplied by the filamentary plasma may be finely modulated, thereby making it possible for films having a large variety of compositions to be deposited.

    [0030] An advantage of this embodiment is that, despite the deliberate generation of harmonics, the introduction of an inductor into the circuit improves the power factor of the installation, hence a considerable increase in its efficiency. Another advantage of this embodiment is that it also makes it possible for the process to generate sufficient active energy for obtaining high deposition rates, while still improving the properties of the films deposited.

    [0031] According to a preferred embodiment, third-order and fifth-order harmonics are essentially promoted.

    [0032] One advantage of this embodiment is that, for the same consumed power, the efficiency of the process is greatly improved.

    [0033] According to an advantageous embodiment, the process further includes the following operation: the position and/or the configuration of the electrode are/is varied so as to obtain optimum reaction characteristics. Specifically, these criteria are used to vary the characteristics of the electrical circuit and they therefore have an influence on the configuration of the current.

    [0034] According to an advantageous embodiment, the process further includes the following operation: the atmosphere in the chamber is brought to a predetermined pressure.

    [0035] According to a preferred embodiment, the chamber is open and comprises an entry zone and an exit zone for the substrate, thereby enabling the process of the invention to be integrated into a continuous surface treatment operation.

    [0036] Advantageously, the substrate is insulating and itself forms a dielectric barrier placed between the at least two electrodes. Moreover, if the substrate is instead conducting, this may itself constitute one of the electrodes.

    [0037] The mixture is introduced into the reaction chamber preferably in the form of a sprayed liquid, a gas or a reactive powder.

    [0038] The power of the installation is preferably of at least 100 kW, or better of at least 200 kW. Preferably, the power of the installation is of at least 500 kW. In practice, the power of the plant can go up to more than 1MW.

    [0039] Another subject of the invention is an installation for depositing a film onto an inorganic substrate, which comprises: a chamber; transport means and support means for introducing a substrate into the chamber; a stabilized high-voltage high-frequency power supply of at least 100 kW, comprising an HF transformer to the terminals of the secondary of which at least two electrodes are connected, said electrodes being placed on each side of the substrate; at least one dielectric barrier between the at least two electrodes; power supply regulation/control means placed upstream of the HF transformer that are capable of increasing the active power/reactive power ratio; means for introducing reactive substances into the chamber; and means for extracting residual substances, characterized in that an adjustable inductor is placed in the secondary circuit of the transformer in parallel with the circuit comprising the at least two electrodes, the characteristics of this adjustable inductor being such that it enables the phase shift between the voltage generated between the electrodes and the total current delivered by the high-voltage source to be modulated, power supply regulation means, placed on the primary side of the transformer, and/or means for controlling the inductor being capable of generating harmonics extending the time during which the current flows between the electrodes.

    [0040] According to an advantageous embodiment, the chamber is open at both its ends, thereby enabling the deposition process to be incorporated into a continuous production plant. Within this context, the chamber may advantageously be incorporated into a float glass production line, the substrate support means comprising a bath of molten tin.

    [0041] According to an advantageous embodiment, the bath of molten tin constitutes one of the electrodes.

    [0042] According to an advantageous embodiment, the installation is incorporated into a production line that includes an annealing lehr, the chamber being placed in this annealing lehr, and the substrate support means comprising at least one roller.

    [0043] The plasma may advantageously be generated in two separate zones lying, one on each side of the substrate, in such a way that a film is deposited onto each side of this substrate simultaneously.

    [0044] According to an advantageous embodiment, the installation comprises an inductor. This inductor comprises a coil consisting of a bundle of conducting elements, insulated from one another, which is wound around a mandrel; a magnetic plunger core placed inside this mandrel and isolated from this mandrel, divided into several sections by inserts; a positioning device connected to the plunger core; an insulating connection connecting the plunger core to the positioning device; and a control system capable of acting on the positioning device, so as to adjust the position of the magnetic plunger core relative to the mandrel.

    Brief description of the drawings



    [0045] Other advantages and features of the invention will become apparent from the following detailed description of particular embodiments of the invention, reference being made to the figures in which:
    • Figure 1 is a schematic side view of an installation for depositing films onto a glass substrate;
    • Figure 2 is an equivalent circuit diagram for the installation of Figure 1 before plasma formation;
    • Figure 3 is an equivalent circuit diagram for the installation of Figure 1 after plasma generation;
    • Figure 4 is an equivalent circuit diagram for the installation according to the invention;
    • Figure 5 is a conventional voltage/current oscillogram;
    • Figure 6 is a voltage/current oscillogram specific to the installation;
    • Figure 7 is a more detailed equivalent circuit diagram of the power supply system for the installation of the invention;
    • Figure 8 is a schematic side view of one embodiment of an installation open at both its ends for film deposition onto a glass substrate according to the invention;
    • Figure 9 is a schematic side view of an embodiment of an installation in the case of an insulating substrate, it being possible, under the conditions prevailing in the deposition chamber, for the substrate itself to form a dielectric barrier, thereby giving the possibility of not using an additional dielectric barrier;
    • Figure 10 is a schematic side view of an induction coil for an installation according to the invention; and
    • Figure 11 is a cross-sectional view of a strand of the winding wire used in the induction coil shown in Figure 11.


    [0046] The figures are not necessarily drawn to scale.

    [0047] In general, similar elements are denoted by similar references in the figures.

    Detailed description of particular embodiments



    [0048] Figure 1 is a schematic view of the installation according to the invention, which here is applied to the continuous production of glass by the "float glass" process. In particular, the treatment chamber is placed above the bath of molten tin. The substrate onto which it is intended to deposit a surface layer is here a continuously cast sheet of glass 2 moving over a bath of liquid tin 4. The direction of movement corresponds to the plane of the sheet in the drawing. During its running movement, the glass sheet 2 enters a "chamber" 6 open at both its ends (entry and exit). Using the well-known CVD technique, a reactive mixture 8 is introduced into the chamber 6. It should be noted that the way of introducing the reactants (counter-currently in Figure 1) is given by way of example. Any other form of introduction (perpendicular to the substrate, etc.) is not excluded.

    [0049] Since the solidified glass sheet 2 is still at relatively high temperature, it provides the mixture 8 with additional thermal energy promoting deposition of a film of the desired composition. Depending on the position of the installation, the temperature of the glass sheet will be between 600°C and 750°C. To further increase the energy available for the reaction, two electrodes are placed in the chamber 6. One of these electrodes is none other than the bath of liquid tin 4 (which is earthed), the other electrode 10 extending along an axis perpendicular to the run direction of the glass sheet 2. The shape of the electrode depicted in Figure 1 is given by way of example. Any other geometry is not excluded.

    [0050] Since a high-frequency high voltage is applied between these electrodes 4, 10, a plasma 12 (shown schematically by parallel lines) is generated, from which the reactants 8 introduced into the chamber draw increased energy, making it possible for a large variety of compounds to be deposited onto the glass sheet. The voltage is preferably between 1 kV and 200 kV peak to peak, more preferably between 5 kV and 100 kV peak to peak and even more preferably between 10 kV and 40 kV peak to peak. The frequency is preferably between 10 kHz and 1000 kHz, more preferably between 20 kHz and 400 kHz and even more preferably between 50 kHz and 200 kHz.

    [0051] To reduce the possible risk of forming electric arcs directly between the two electrodes, a dielectric barrier 14 may be placed in the chamber between the positions of the two electrodes 4 and 10. Since the chamber 6 is of the open type, it is necessary to also use powerful extraction means which remove the pyrolysis residues and the dust generated by the deposition process. It goes without saying that what has been described above in the bath of molten tin applies mutatis mutandis in the annealing lehr, the bath of molten tin being replaced with a metal electrode placed for example between the rollers and earth. In this situation, the temperature of the substrate may be varied between 20°C and 600°C.

    [0052] The problem that generally arises in this type of process, whenever it is desired to take it from the experimental stage to industrial production, is the low efficiency obtained with regard to the energy consumed to generate the plasma. As a consequence, this efficiency must be improved so as to make the process not only energetically profitable but also to allow the process to generate sufficient active energy to obtain high deposition rates while improving the properties of the films deposited. A thorough study of all the factors involving energy was therefore undertaken, thereby making it possible to reduce, very schematically, the installation in question to two equivalent circuit diagrams, as shown in Figures 2 and 3.

    [0053] Figure 2 is a very simplified equivalent circuit diagram for the installation before ignition, a high voltage being applied between the electrodes 4, 10. Installing the discharge in the chamber 6 essentially amounts to adding capacitances in parallel and in series, namely Cp (parasitic capacitance in parallel with a parasitic resistance Rp), Cd (capacitance of the dielectric), Cv (capacitance of the glass) and Cg (capacitance of the gas).

    [0054] Figure 3 shows the same circuit diagram when the plasma is generated. At this moment, Cg is shunted by a resistance Rg, which represents the resistance of the plasma.

    [0055] In the absence of a discharge (i.e. as long as the voltage applied between the electrodes is below the ignition voltage), the value of Rg is extremely high, and the total current delivered by the source is in practice purely capacitive, the reactive part being essentially dependent on the dielectric loss in the insulator of the upper electrode and/or the lower electrode and on the substrate. During discharge, the "useful" current Ig flowing through the plasma always remains low compared with its capacitive component. The use of the voltage source is therefore limited, the delivered power being dissipated in producing a very high reactive current, whereas only the active component, delivering the "watted" (i.e. in-phase) power to the discharge (Pw = RgIg2), is useful.

    [0056] Firstly to compensate for the lack of watted power, consideration was given to placing an induction coil L acting as "energy reservoir" in parallel with the installation, making it possible to generate a current in phase opposition with the energy absorbed by the capacitive load. This allows almost complete recovery of the energy involved. An equivalent circuit diagram as shown in Figure 4 is therefore obtained.

    [0057] However, it should be pointed out that this type of compensation is not similar to the compensation obtained for example by placing an induction coil in parallel with a current distribution line, nor to an installation for generating a relatively low-power plasma (glow-discharge plasma), as used for coating polymer sheets. This is because what is involved here is not a fixed capacitive component, as is the case in a distribution network, but a load eminently variable according to the frequency (here, kilohertz frequency), the thickness of the substrate and the reactants introduced into the chamber (which induce variations in the electrical and dielectric properties of the gas and the plasma, etc.). As a consequence, it is necessary to employ a very particular type of induction coil, capable not only of withstanding the loading conditions generated in a high-power installation (in the order of several hundred kW), at high voltage, of course, but also at high frequency, and also having the possibility of being adjusted relatively finely according to the imposed conditions during each type of manufacture. This is because the resultant load will vary, in particular according to the various process parameters such as, for example, the nature of the reactants, the thickness of the glass, the gas gap, etc. The gas gap is preferably between 0.5 mm and 100 mm, more preferably between 1 mm and 20 mm and even more preferably between 3 mm and 6 mm.

    [0058] Various trials showing the possibility of employing the process of the invention in a concrete practical manner brought to light an advantageous and unexpected consequence of this process.

    [0059] Figure 5 shows that another phenomenon is responsible in part for the mediocre efficiency of a DBD plasma film deposition installation: when an HF high voltage is applied, for each half-period, a discharge can be sustained only over the time period t1 when the applied voltage is above an ignition voltage V1. This time interval is intimately linked to the parameters described above. Of course, this phenomenon is repeated each half-period. The efficiency of the process is therefore limited by the ratio of t1 to the length of a half-period.

    [0060] According to Fourier's law, if a source supplies a non-linear dipole, the resulting current will not be linear and will have a complex form which may be decomposed into a superposition of several curves, i.e. those having a "fundamental" frequency and a sum of harmonics.

    [0061] In the present case, it has been found that interposing an induction coil in the circuit gives rise to a distortion of the curve corresponding to the flow of current through the plasma, as shown in Figure 6. This curve may be decomposed using the principle of Fourier series into a fundamental and a series of harmonics, the most significant ones of which, owing to their amplitude, are the 3rd and 5th odd harmonics. As may be seen in Figure 6, the curve corresponding to the current flow has a kind of "plateau" over a time interval t2 much longer than the interval t1 observed on the curve shown in Figure 5. The length of this interval may be optimized by varying the characteristics of the circuit, and in particular the frequency and the inductance of the inductor L placed in the secondary of the VHV transformer. As a consequence, in the installation of the invention, by interposing an adjustable induction coil of suitable characteristics, it is possible to obtain, all other things being equal, not only an increase in active power but also a longer discharge time and, as a consequence, a much better energy efficiency.

    [0062] Figure 7 is a more complete equivalent circuit diagram than that sketched in Figure 4, and better demonstrates the particular features of the installation itself, if it is compared with the prior art. Referring to this circuit diagram, it may be seen that all the adjustments (filtering, compensation, etc.) making it possible to have a stabilized and optimally compensated voltage/current curve (cosϕ) are essentially performed on the primary 601 of the supply transformer 602. As a consequence, the sole adjustment means necessary for achieving the phase shift shown in Figure 6 in the secondary circuit 604 of this transformer 602 is the variable induction coil 606, designed especially to work at very high voltage and placed in parallel with the plasma generator.

    [0063] The power supply is therefore controlled in the following manner: an aperiodic generator is used consisting of an inverter 608 (which converts the DC supply current to an AC current), a parallel oscillating circuit and a variable induction coil LV1 for adjusting the operating frequency and providing the correct active power. Placed in the primary circuit of the very high-power transformer there is a power controller 610 and its associated safety circuits (P/S) 612.

    [0064] Thanks to the circuit diagram shown in Figure 7, it is very simple thereafter to adjust the inductance of the induction coil LV2 in such a way that the load formed by LV2, Cr and Cp remains non-linear so as to promote the third-order and fifth-order harmonics that enable the stable plasma to be sustained for an appreciably longer time per half-period (see Figures 5 and 6).

    [0065] The operations performed on the primary 601 and on the secondary 604, respectively, of the transformer therefore work in apparent contradiction: the aim is firstly (in the primary) to increase cosϕ of the installation (thereby increasing its apparent efficiency) and, moreover, in the secondary, this optimum value is degraded so as to generate harmonics, which thus paradoxically increase the efficiency of plasma deposition.

    [0066] If it is added that the very high-power induction coil inserted into the secondary circuit is raised to a very high voltage, the installation thus designed comprises a series of features that are paradoxical to those skilled in the art.

    [0067] The active power is increased preferably by at least 10%, more preferably by at least 25% and even more preferably by at least 50%. The discharge time is increased preferably by at least 15%, more preferably by at least 30% and even more preferably by at least 60%. It should also be noted that, to determine the "optimum" inductance of the induction coil, it is necessary to take into account the intrinsic inductance of the power supply circuit (which includes a transformer), said intrinsic inductance not necessarily being negligible. Since the power supply circuit has its own resonant frequency, the inductance of L may, under certain conditions, be greatly reduced.

    [0068] It goes without saying for a person skilled in the art that it is also possible to use a capacitive voltage tripler (C1, C2, C3) in the primary circuit so as to obtain a VHV by reducing the number of turns of the transformer 602, the overall size of which is thus appreciably reduced.

    [0069] Among the advantages of the process as described, mention may be made of the following:
    • owing to the increase in deposition efficiency, it is possible to reduce the amount of chemical reactants used. As a consequence, apart from a reduction in production costs and in environmental impact, it is observed that there is less fouling of the installation, thereby generating additional cost savings;
    • an increase in deposition rate, with the corollary that the treatment time is reduced. As a consequence, it is possible for substrates moving at higher speed to be continuously treated. Conversely, the width of the treatment chamber may be reduced, hence a not insignificant space saving. Finally, there is the possibility of obtaining much thicker films in a single pass, which may prove to be advantageous in particular from the standpoint of the properties of these films;
    • better decomposition of the precursors is observed during the reactions taking place within the plasma. As a consequence, the presence of organic residues in the films is avoided. Furthermore, the films deposited will be more dense and better crystallized, hence an improvement in both optical and mechanical properties of the films deposited; and
    • it is also possible to increase the variety of species deposited onto the substrate in film form, again with a lesser environmental impact.


    [0070] Finally, it is also possible, as shown in Figure 8, by a judicious choice of the characteristics, to work simultaneously on both sides of the glass 2, even depositing thereonto, as the case may be, different species, since there is the possibility, using various tricks (physical separation or extraction apparatus suitably positioned), of introducing different reactive substances 108, 208 on either side of the glass 2 in the two plasma zones (112, 212). Furthermore, the distance between the substrate 2 to be coated and the two electrodes (110, 210) covered with dielectrics (14, 114) may also be adjusted according to the desired deposition criteria. It goes without saying that the equivalent circuit diagram for such an installation is more complex and that it is possible to control the characteristics thereof only by the presence of the adjustable inductor characteristic of the installation according to the invention. In addition, the presence of two gaps acting as capacitors in series a priori reduces the discharge current, hence the benefit of the present invention.

    [0071] It goes without saying that what has been described above for a continuous glass casting installation applies mutatis mutandis to an open installation relating to discontinuous substrates, such as precut volumes of glass (the installation may for example be incorporated into a toughening line). The chamber of Figure 8 may be replaced by a closed chamber designed for a process for depositing a discontinuous film on separate glass volumes. In this case, one or two closure devices make it possible either to work at atmospheric pressure or to work at pressures well away from atmospheric pressure (typically between 10-1 Pa and 110 kPa) (in the case of the installation shown in Figure 1, it is necessary to use powerful extraction devices to operating at reduced pressure, reactants (108, 208) may also be used that have lower vapour pressures and/or have a more toxic character, without in any way endangering the health of the operators. Such an installation may for example be incorporated into a film deposition line working at low pressure, of the magnetron sputtering type.

    [0072] The advantages associated with generating filamentary plasma on both sides of a substrate are numerous. In fact, the number of technical applications for a substrate treated on both sides is ever increasing.

    [0073] Figure 9 is a variant of the installation shown in Figure 8. If the substrate is insulating, it is possible to dispense with additional dielectrics (14, 114).

    [0074] Figure 10 is a simplified representation of one embodiment of the compensating induction coil 20 for the installation of the invention. This induction coil 20 is essentially made up of a winding 22 wound around a mandrel 24. Since the voltage across its terminals may be 60 kV, the choice of material used for the mandrel supporting the winding is very important. Advantageously, Acculon was used. A plunger core 26, carefully insulated and mechanically connected to a positioning device 28 controlled by a control system, is placed inside this mandrel 24. In view of the particular operating conditions that this induction coil must face in use, a series of innovations in its practical construction has been adopted. Thus, the winding 22 is made with a bundle of copper wires 30 (see Figure 11), which are insulated so as to increase the flow cross section for the HF current (taking into account the skin effect) and also to reduce heating. Thus, it is possible to divide the total HF current by a factor of 50 by producing a conductor bundle consisting of 50
    mutually insulated strands. The winding pitch is fixed so that the risk of inter-turn arcing is as low as possible. A winding made of a single ply is therefore preferable, although it has the consequence that the device in its entirety is large. The position of the magnetic core 26, and therefore the inductance of the induction coil 20, is adjusted by remote control so that this operation can be carried out without danger to the operator.

    [0075] It should be obvious to a person skilled in the art that the present invention is not limited to the exemplary embodiments illustrated and described above. The invention comprises each of the novel features and also combinations thereof. The presence of reference numbers cannot be considered to be limiting. The use of the term "comprises" or the term "includes" can in no way exclude the presence of other elements, other than those mentioned. The use of the indefinite article "a" or "an" to introduce an element does not exclude the presence of a plurality of these elements. The present invention has been described in relation to specific embodiments, which are purely illustrative and must not be considered to be limiting.


    Claims

    1. Process for depositing a film onto an inorganic substrate, characterized in that it comprises the following operations:

    - a substrate is introduced into or made to run through a reaction chamber (6, 106, 206) in which at least two electrodes (10, 110, 210) are placed, at least one dielectric barrier (14, 114) being placed between these at least two electrodes (10, 110, 210);

    - an amplitude- and frequency-stabilized power supply of at least 100 kW, that includes an HF transformer, to the terminals of the secondary of which the at least two electrodes are connected, is employed;

    - a stabilized high-frequency voltage is generated in the secondary circuit of this transformer, said voltage being such that it generates a filamentary plasma (12, 112, 212) between the at least two electrodes (10, 110, 210);

    - an adjustable inductor (L) placed in parallel with the intrinsic inductor of the circuit comprising the at least two electrodes is employed so as to reduce the phase shift between the voltage and the current that are generated in the secondary of the transformer;

    - a mixture (8, 108, 208) is introduced into the reaction chamber (6, 106, 206), the composition of said mixture being such that, upon contact with the plasma, it decomposes and generates species capable of being deposited as a film onto the substrate;

    - the voltage and/or the frequency delivered by the stabilized power supply and/or the inductance of the adjustable inductor (L) placed in parallel with the circuit comprising the at least two electrodes are/is adapted at the start of or during the process, so as to increase the active power/reactive power ratio;

    - the voltage and/or the frequency delivered by the generator circuit and/or the inductance of the inductor (L) are/is adapted so as to the promote production of harmonics extending the time during which the voltage remains above that for sustaining the electrical discharge and, as a consequence, the time during which the current flows between the electrodes; and

    - the substrate (2) is kept in the chamber for a period of time sufficient to obtain a film of desired thickness on at least one of the sides of said substrate.


     
    2. Process according to Claim 1, characterized in that the third-order and fifth-order harmonics are essentially promoted.
     
    3. Process according to either of Claims 1 and 2, characterized in that it further includes the following operation: the position and/or the configuration of at least one electrode (10, 110, 210) are/is varied so as to obtain optimum reaction characteristics.
     
    4. Process according to any one of Claims 1 to 3, characterized in that it further includes the following operation: the atmosphere in the chamber (6, 106, 206) is brought to a predetermined pressure.
     
    5. Process according to any one of Claims 1 to 4, characterized in that the substrate (2) is insulating and itself forms a dielectric barrier.
     
    6. Process according to any one of Claims 1 to 4, characterized in that the substrate (2) is conducting and itself forms an electrode.
     
    7. Process according to any one of the preceding claims, characterized in that power of the installation is of at least 200 kW.
     
    8. Process according Claim 7, characterized in that power of the installation is of at least 500 kW.
     
    9. Installation for depositing a film onto an inorganic substrate (2), which comprises: a chamber (6, 106, 206); transport means (4) and support means for introducing a substrate into the chamber; a stabilized high-voltage high-frequency power supply of at least 100 kW, comprising an HF transformer to the terminals of the secondary of which at least two electrodes (10, 110, 210) are connected, said electrodes being placed on each side of the substrate (2); at least one dielectric barrier (14, 114) placed between the at least two electrodes (10, 110, 210); power supply regulation/control means placed upstream of the HF transformer that are capable of increasing the active power/reactive power ratio; means (8, 108, 208) for introducing reactive substances into the chamber (6, 106, 206); and means for extracting residual substances, characterized in that an adjustable inductor (L) is placed in the secondary circuit of the transformer in parallel with the circuit comprising the at least two electrodes, the characteristics of this adjustable inductor (L) being such that it enables the phase shift between the voltage generated between the electrodes (10, 110, 210) and the total current delivered by the high-voltage source to be modulated, power supply regulation means, placed on the primary side of the transformer, and/or means for controlling the inductor (L) being capable of generating harmonics extending the time during which the current flows between the electrodes.
     
    10. Deposition installation according to claim 9, characterized in that the chamber (6, 106) is incorporated into a float glass production line, the substrate support means comprising a bath of molten tin (4).
     
    11. Deposition installation according to Claim 10, characterized in that the bath of molten tin (4) constitutes one of the electrodes (10).
     
    12. Deposition installation according to claim 9, characterized in that it is incorporated into a production line including an annealing lehr, the chamber being placed in said annealing lehr, the substrate support means comprising at least one roller.
     
    13. Deposition installation according to claim 9, characterized in that it is incorporated into a tempering line.
     
    14. Deposition installation according to claim 9, characterized in that it is incorporated into a deposition line working at low pressure.
     
    15. Deposition installation according to any one of Claims 9 to 14, characterized in that the plasma is generated in two separate zones lying on each side of the substrate, in such a way that a film is deposited onto each side of this substrate simultaneously.
     
    16. Deposition installation according to any one of Claims 9 to 15, characterized in that the inductor comprises:

    - a coil (22) consisting of a bundle of conducting elements (30), insulated from one another, which is wound around a mandrel (24);

    - a magnetic plunger core (26) placed inside this mandrel (24) and isolated from this mandrel (24);

    - a positioning device (28) connected to the plunger core (26);

    - an insulating connection connecting the plunger core (26) to the positioning device; and

    - a control system capable of acting on the positioning device, so as to adjust the position of the magnetic plunger core (26) relative to the mandrel (24).


     


    Ansprüche

    1. Verfahren zum Aufbringen eines Films auf ein anorganisches Substrat, dadurch gekennzeichnet, dass es die folgenden Vorgänge umfasst:

    - ein Substrat wird in eine Reaktionskammer (6, 106, 206) eingeführt oder durch diese laufen gelassen, in der mindestens zwei Elektroden (10, 110, 210) angeordnet sind, wobei mindestens eine dielektrische Barriere (14, 114) zwischen diesen mindestens zwei Elektroden (10, 110, 210) angeordnet ist;

    - eine Amplitüden- und Frequenz-stabilisierte Stromversorgung von mindestens 100 kW, die einen HF-Transformator umfasst, an die Terminale des Sekundärkreises, von dem mindestens zwei Elektroden verbunden sind, wird verwendet;

    - eine stabilisierte Hochfrequenz-Spannung wird im Sekundärkreis dieses Transformators erzeugt, wobei die Spannung derart ist, dass sie ein Fadenplasma (12, 112, 212) zwischen den mindestens zwei Elektroden (10, 110, 210) erzeugt;

    - ein einstellbarer Induktor (L), parallel geschaltet mit dem intrinsischen Induktor des Kreises, der die mindestens zwei Elektorden umfasst, wird verwendet, um die Phasenverschiebung zwischen der Spannung und dem Strom, die im Sekundärkreis des Transformators erzeugt werden, zu reduzieren.

    - eine Mischung (8, 108, 208) wird in die Reaktionskammer (6, 106, 206) eingeführt, wobei die Zusammensetzung der Mischung derart ist, dass sie sich beim Kontakt mit dem Plasma zersetzt und Spezies erzeugt, die als ein Film auf das Substrat aufgebracht werden können;

    - die Spannung und/oder die Frequenz, die von der stabilisierten Stromversorgung und/oder der Induktivität des einstellbaren Induktors (L) geliefert wird, der parallel mit dem Kreis geschaltet ist, der die mindestens zwei Elektroden umfasst, wird/werden am Beginn oder während des Verfahrens angepasst, um das Verhältnis zwischen aktiver und reaktiver Leistung zu erhöhen.

    - die Spannung und/oder die Frequenz, die vom Generatorkreis und/oder der Induktivität des Induktors (L) geliefert wird, wird/werden eingestellt, um die Erzeugung von Oberschwingungen zu fördern, wodurch die Zeit verlängert wird, während der die Spannung über derjenigen zur Aufrechterhaltung der elektrischen Entladung bleibt und, als Konsequenz, die Zeit, während der der Strom zwischen den Elektroden fließt; und

    - das Substrat (2) wird während eines Zeitraums in der Kammer gehalten, der ausreichend ist, um einen Film der gewünschten Dicke auf mindestens einer der Seiten des Substrats zu erhalten.


     
    2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, dass die Oberschwingungen dritter Ordnung und fünfter Ordnung im Wesentlichen gefördert werden.
     
    3. Verfahren nach einem der Ansprüche 1 und 2, dadurch gekennzeichnet, dass es weiter den folgenden Vorgang umfasst: die Position und/oder die Konfiguration von mindestens einer Elektrode (10, 110, 210) werden/wird variiert, um optimale Reaktionsmerkmale zu erhalten.
     
    4. Verfahren nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, dass es weiter den folgenden Vorgang umfasst: die Atmosphäre in der Kammer (6, 106, 206) wird auf einen vorbestimmten Druck gebracht.
     
    5. Verfahren nach einem der Ansprüche 1 bis 4, dadurch gekennzeichnet, dass das Substrat (2) isolierend ist und selbst eine dielektrische Barriere bildet.
     
    6. Verfahren nach einem der Ansprüche 1 bis 4, dadurch gekennzeichnet, dass das Substrat (2) leitend ist und selbst eine Elektrode bildet.
     
    7. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Spannung der Anlage mindestens 200 kW beträgt.
     
    8. Verfahren nach Anspruch 7, dadurch gekennzeichnet, dass die Spannung der Anlage mindestens 500 kW beträgt.
     
    9. Anlage zum Aufbringen eines Films auf ein anorganisches Substrat (2), die Folgendes umfasst: eine Kammer (6, 106, 206); Transportmittel (4) und Trägermittel zur Einführung eines Substrats in die Kammer; eine stabilisierte Hochspannungs-, Hochfrequenz-Stromversorgung von mindestens 100 kW, umfassend einen HF-Transformator an die Terminale des Sekundärkreises, von dem mindestens zwei Elektroden (10, 110, 210) verbunden sind, wobei die Elektroden auf jeder Seite des Substrats (2) angeordnet sind; mindestens eine dielektrische Barriere (14, 114), die zwischen den mindestens zwei Elektroden (10, 110, 210) angeordnet ist; Stromversorgungs-Regulierungs-/Steuermittel, die stromaufwärts des HF-Transformators angeordnet sind, die dazu in der Lage sind, das Verhältnis zwischen aktiver und reaktiver Leistung zu erhöhen; Mittel (8, 108, 208) zur Einführung von reaktiven Substanzen in die Kammer (6, 106, 206); und Mittel zur Extraktion von restlichen Substanzen, dadurch gekennzeichnet, dass der einstellbare Induktor (L) im Sekundärkreis des Transformators parallel mit dem Kreis geschaltet wird, der mindestens zwei Elektroden umfasst, wobei die Merkmale dieses einstellbaren Induktors (L) derart sind, dass er ermöglicht, dass die Phasenverschiebung zwischen der Spannung, die zwischen den Elektroden (10, 110, 210) erzeugt wird, und dem Gesamtstrom, der von der Hochspannungsquelle geliefert wird, moduliert wird, Stromversorgungs-Regulierungsmittel, die auf der primären Seite des Transformators angebracht sind, und/oder Mittel zur Steuerung des Induktors (L), die dazu in der Lage sind, Oberschwingungen zu erzeugen, die die Zeit verlängern, während der der Strom zwischen den Elektroden fließt.
     
    10. Aufbringungsanlage nach Anspruch 9, dadurch gekennzeichnet, dass die Kammer (6, 106) in eine Floatglas-Produktionslinie eingebaut ist, wobei die Substratträgermittel ein Bad aus geschmolzenem Zinn (4) umfasst.
     
    11. Aufbringungsanlage nach Anspruch 10, dadurch gekennzeichnet, dass das Bad aus geschmolzenem Zinn (4) eine der Elektroden (10) bildet.
     
    12. Aufbringungsanlage nach Anspruch 9, dadurch gekennzeichnet, dass sie in eine Produktionslinie eingebaut ist, umfassend einen Kühlofen, wobei die Kammer in dem Kühlofen angebracht ist, wobei das Substratträgermittel mindestens eine Walze umfasst.
     
    13. Aufbringungsanlage nach Anspruch 9, dadurch gekennzeichnet, dass sie in eine Aushärtungslinie eingebaut ist.
     
    14. Aufbringungsanlage nach Anspruch 9, dadurch gekennzeichnet, dass sie in eine Aufbringungslinie eingebaut ist, die bei niedrigem Druck arbeitet.
     
    15. Aufbringungsanlage nach einem der Ansprüche 9 bis 14, dadurch gekennzeichnet, dass das Plasma in zwei getrennten Bereichen erzeugt wird, die auf jeder Seite des Substrats liegen, so dass ein Film gleichzeitig auf jede Seite dieses Substrats aufgebracht wird.
     
    16. Aufbringungsanlage nach einem der Ansprüche 9 bis 15, dadurch gekennzeichnet, dass der Induktor Folgendes umfasst:

    - eine Spule (22), die aus einem Bündel von leitenden Elementen (30) besteht, die voneinander isoliert sind, das um einen Dorn (24) gewickelt ist.

    - einen magnetischen Tauchkern (26), der in diesem Dorn (24) angeordnet und von diesem Dorn (24) isoliert ist;

    - eine Positionierungsvorrichtung (28), die mit dem Tauchkern (26) verbunden ist;

    - eine isolierende Verbindung, die den Tauchkern (26) mit der Positionierungsvorrichtung verbindet; und

    - ein Steuerungssystem, das dazu in der Lage ist, auf die Positionierungsvorrichtung einzuwirken, um die Position des magnetischen Tauschkerns (24) einzustellen.


     


    Revendications

    1. Un procédé pour le dépôt d'une couche sur un substrat caractérisé en ce qu'il comprend les opérations suivantes :

    - introduire ou faire défiler un substrat dans une chambre de réaction (6, 106, 206) dans laquelle sont placées au moins deux électrodes (10, 110, 210), au moins une barrière diélectrique (14, 114) étant placée entre ces au moins deux électrodes (10, 110, 210);

    - mettre en service une alimentation de puissance stabilisée en amplitude et en fréquence d'au moins 100kW, cette installation comprenant un transformateur HF, les au moins deux électrodes étant reliées aux bornes du secondaire de cette alimentation ;

    - engendrer une tension électrique à haute fréquence dans le secondaire de ce transformateur HF, la valeur de cette tension étant telle qu'elle entraîne la génération d'un plasma filamentaire (12, 112, 212) entre les au moins deux électrodes (10, 110, 210);

    - mettre en service une inductance ajustable (L) disposée en parallèle avec l'inductance propre du circuit comprenant les au moins deux électrodes, de façon à réduire le déphasage entre la tension et le courant engendré dans le secondaire de ce transformateur;

    - introduire dans la chambre de réaction (6, 106, 206) un mélange (8, 108, 208) dont la composition est telle qu'au contact du plasma, il se décompose et engendre des espèces aptes à se déposer en couche sur le substrat ;

    - adapter la tension et/ou la fréquence fournies par le circuit générateur et/ou la valeur de l'inductance ajustable (L) placée dans le circuit au début ou en cours de procédé, de façon à augmenter le rapport puissance active/puissance réactive;

    - adapter la tension et/ou la fréquence fournies par le circuit générateur et/ou la valeur de l'inductance (L) de façon à favoriser la production d'harmoniques prolongeant le temps durant lequel la tension reste supérieure à la valeur de maintien de la décharge électrique et, en conséquence, le temps durant lequel le courant passe entre les électrodes;

    - maintenir le substrat (2) dans la chambre durant un laps de temps suffisant pour obtenir sur au moins une de ses faces une couche d'épaisseur souhaitée.


     
    2. Procédé selon la revendication 1, caractérisé en ce que l'on favorise essentiellement les harmoniques d'ordre 3 et 5.
     
    3. Procédé selon l'une quelconque des revendications 1 ou 2, caractérisé en ce qu'il comprend en outre l'opération suivante : faire varier la position et/ou la configuration de l'au moins une électrode (10, 110, 210) de façon à obtenir des caractéristiques de réaction optimales.
     
    4. Procédé selon l'une quelconque des revendications 1 à 3 caractérisé en ce qu'il comprend en outre l'opération suivante : - amener l'atmosphère régnant dans la chambre (6, 106, 206) à une pression déterminée.
     
    5. Procédé selon l'une quelconque des revendications 1 à 4, caractérisé en ce que le substrat (2) est isolant et forme lui-même une barrière diélectrique.
     
    6. Procédé selon l'une quelconque des revendications 1 à 7, caractérisé en ce que le substrat (2) est conducteur et forme lui-même une électrode.
     
    7. Procédé selon l'une quelconque des revendications 1 à 6, caractérisé en ce que la puissance de l'installation est d'au moins 200kW.
     
    8. Procédé selon la revendication 7, caractérisé en ce que la puissance de l'installation est d'au moins 500kW.
     
    9. Une installation de dépôt d'une couche sur un substrat inorganique (2) comprenant une chambre (6, 106, 206), des moyens de transport (4) et des moyens de support pour introduire un substrat dans la chambre, une alimentation électrique à haute tension et à haute fréquence d'au moins 100kW comprenant un transformateur HF aux bornes du secondaire duquel sont reliée au moins deux électrodes (10, 110, 210) disposées de part et d'autre du substrat (2), au moins une barrière diélectrique (14, 114) disposée entre les au moins deux électrodes(10, 110, 210), des moyens de régulation et de contrôle de l'alimentation électrique placées en amont du transfo HF et capables d'améliorer le rapport puissance active/puissance réactive, des moyens d'introduction de substances réactives (8, 108, 208) dans la chambre (6, 106, 206), des moyens d'extraction de substances résiduelles, caractérisée en ce qu'une inductance ajustable (L) est placée dans le circuit secondaire du transformateur en parallèle avec le circuit comprenant les au moins deux électrodes, les caractéristiques de cette inductance ajustable (L) étant telles qu'elle permet de moduler le déphasage entre la tension générée entre les électrodes (10, 110, 210) et le courant total fourni par la source haute tension, des moyens de régulation de l'alimentation électrique et les moyens de contrôle de l'inductance (L) permettant la génération d'harmoniques prolongeant le maintien du passage du courant entre les électrodes.
     
    10. Une installation de dépôt suivant la revendication 9 caractérisée en ce que la chambre (6, 106) est intégrée dans une ligne de production de verre flotté, les moyens de support du substrat comprenant un bain d'étain (4).
     
    11. Une installation de dépôt suivant la revendication 10 caractérisée en ce que le bain d'étain (4) constitue une des électrodes (10).
     
    12. Une installation de dépôt suivant la revendication 9 caractérisée en ce qu'elle est intégrée dans une ligne de production comprenant une galerie de recuisson, la chambre étant placée dans cette galerie de recuisson, les moyens de support du substrat comprenant au moins un rouleau.
     
    13. Installation de dépôt suivant la revendication 9 caractérisée en ce qu'elle est intégrée dans une ligne de trempe.
     
    14. Installation de dépôt suivant la revendication 9 caractérisée en ce qu'elle est intégrée dans une ligne de dépôt travaillant à basse pression.
     
    15. Une installation de dépôt suivant l'une quelconque des revendications 9 à 14 caractérisée en ce que le plasma est généré dans deux zones distinctes disposées de part et d'autre du substrat, de façon telle qu'une couche est déposée sur chacune des faces de ce substrat simultanément.
     
    16. Une installation de dépôt suivant l'une quelconque des revendications 9 à 15 caractérisée en ce que l'inductance comprend :

    - un bobinage (22) constitué d'un faisceau d'éléments conducteurs (30) isolés les uns par rapport aux autres, enroulé autour d'un mandrin (24) ;

    - un noyau magnétique plongeur (26) disposé à l'intérieur de ce mandrin (24), isolé de ce mandrin (24);

    - un dispositif de positionnement (28) relié au noyau plongeur (26) ;

    - une connexion isolante reliant le noyau plongeur (26) et le dispositif de positionnement ;

    - un système de contrôle apte à agir sur le dispositif de positionnement, de façon à ajuster la position du noyau magnétique plongeur (26) par rapport au mandrin (24).


     




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    REFERENCES CITED IN THE DESCRIPTION



    This list of references cited by the applicant is for the reader's convenience only. It does not form part of the European patent document. Even though great care has been taken in compiling the references, errors or omissions cannot be excluded and the EPO disclaims all liability in this regard.

    Patent documents cited in the description