(19)
(11)EP 2 431 757 A3

(12)EUROPEAN PATENT APPLICATION

(88)Date of publication A3:
25.10.2017 Bulletin 2017/43

(43)Date of publication A2:
21.03.2012 Bulletin 2012/12

(21)Application number: 11192124.3

(22)Date of filing:  20.10.2003
(51)International Patent Classification (IPC): 
G01R 33/09(2006.01)
G01R 15/20(2006.01)
(84)Designated Contracting States:
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR

(30)Priority: 11.02.2003 US 364442

(62)Application number of the earlier application in accordance with Art. 76 EPC:
03781413.4 / 1581817

(71)Applicant: Allegro Microsystems, LLC
Worcester, MA 01615-0036 (US)

(72)Inventors:
  • Stauth, Jason
    Hanover NH 03755 (US)
  • Dickinson, Richard
    St. Albans, VT 05478 (US)
  • Forrest, Glenn
    Bow, NH 03304 (US)
  • Vig, Ravi
    Bow, NH 03304 (US)

(74)Representative: South, Nicholas Geoffrey 
A.A. Thornton & Co. 10 Old Bailey
London EC4M 7NG
London EC4M 7NG (GB)

  


(54)INTEGRATED SENSOR


(57) An integrated sensor includes a magnetoresistance element electrically coupled to a device disposed on or integrated in a silicon substrate. A conductor is provided proximate to the magnetoresistance element. The integrated sensor can be used to provide various devices, such as a current sensor, a magnetic field sensor, or an isolator. Further, the integrated sensor can be used in an open loop configuration or in a closed loop configuration in which an additional conductor is provided. The magntoresistance element may be formed over the silicon substrate or on a separate, non-silicon substrate. Also described is an integrated sensor comprising a substrate, a magnetic field transducer disposed over a surface of the substrate, and a conductor disposed over the surface of the substrate proximate to the magnetic field transducer. The magnetic field transducer can be a Hall effect transducer or a magnetoresistance element.





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