(19)
(11)EP 2 551 912 A3

(12)EUROPEAN PATENT APPLICATION

(88)Date of publication A3:
05.11.2014 Bulletin 2014/45

(43)Date of publication A2:
30.01.2013 Bulletin 2013/05

(21)Application number: 12177404.6

(22)Date of filing:  20.07.2012
(51)International Patent Classification (IPC): 
H01L 21/336(2006.01)
H01L 29/06(2006.01)
H01L 29/78(2006.01)
(84)Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated Extension States:
BA ME

(30)Priority: 26.07.2011 US 201113190723

(71)Applicant: General Electric Company
Schenectady, NY 12345 (US)

(72)Inventors:
  • Arthur, Stephen Daley
    Niskayuna, NY 12309 (US)
  • Matocha, Kevin
    Starkville, MS 39759 (US)
  • Sandvik, Peter
    Niskayuna, NY 12309 (US)
  • Stum, Zachary
    Niskayuna, NY 12309 (US)
  • Losee, Peter
    Niskayuna, NY 12309 (US)
  • McMahon, James
    Niskayuna, NY 12309 (US)

(74)Representative: Williams, Andrew Richard 
GPO Europe GE International Inc. The Ark 201 Talgarth Road Hammersmith
London W6 8BJ
London W6 8BJ (GB)

  


(54)A silicon-carbide mosfet cell structure and method for forming same


(57) In one embodiment, the invention comprises a silicon-carbide MOSFET comprising individual MOSFET cells. Each cell comprises a U-shaped well (228) (P type) and two parallel sources (260) (N type) formed within the well. A plurality of source rungs (262) (doped N) connect sources (260) at multiple locations. Regions between two rungs (262) comprise a body region (252) (P type). These features are formed on an N-type epitaxial layer (220), which is formed on an N-type substrate (216). A contact (290) extends across and contacts a plurality of source rungs (262) and body regions (252). Gate oxide and a gate contact overlie a leg of a well of a first cell and a leg of a well of a second adjacent cell, inverting the conductivity responsive to a gate voltage. A MOSFET comprises a plurality of these cells to attain a desired low channel resistance. The cell regions are formed using self-alignment techniques at several states of the fabrication process.







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