(19)
(11)EP 2 619 800 B1

(12)EUROPEAN PATENT SPECIFICATION

(45)Mention of the grant of the patent:
04.12.2019 Bulletin 2019/49

(21)Application number: 11856640.5

(22)Date of filing:  06.10.2011
(51)Int. Cl.: 
H01L 31/0392  (2006.01)
H01L 31/0749  (2012.01)
(86)International application number:
PCT/KR2011/007394
(87)International publication number:
WO 2012/102449 (02.08.2012 Gazette  2012/31)

(54)

SOLAR CELL

SOLARZELLE

CELLULE SOLAIRE


(84)Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

(30)Priority: 25.01.2011 KR 20110007516

(43)Date of publication of application:
31.07.2013 Bulletin 2013/31

(73)Proprietor: LG Innotek Co., Ltd.
Seoul, 04637 (KR)

(72)Inventor:
  • LIM, Chin Woo
    Seoul 100-714 (KR)

(74)Representative: Novagraaf Technologies 
Bâtiment O2 2, rue Sarah Bernhardt CS90017
92665 Asnières-sur-Seine Cedex
92665 Asnières-sur-Seine Cedex (FR)


(56)References cited: : 
WO-A1-2010/058640
KR-A- 20100 066 975
KR-A- 20080 009 346
  
  • GLATZEL T ET AL: "(Zn,Mg)O AS WINDOW LAYER FOR Cd-FREE CHALCOPYRITE SOLAR CELLS", 17TH. E.C. PHOTOVOLTAIC SOLAR ENERGY CONFERENCE. MUNICH, GERMANY, OCT. 22 - 26, 2001; [PROCEEDINGS OF THE INTERNATIONAL PHOTOVOLTAIC SOLAR ENERGY CONFERENCE], MUNICH : WIP-RENEWABLE ENERGIES, DE, vol. CONF. 17, 22 October 2001 (2001-10-22), pages 1151-1154, XP001139644, ISBN: 978-3-936338-08-9
  • TAKAYUKI NEGAMI ET AL: "Cd free CIGS solar cells fabricated by dry processes", CONFERENCE RECORD OF THE IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS INC. US; [IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE], CONFERENCE RECORD OF THE 29TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 200, vol. CONF. 29, 19 May 2002 (2002-05-19), pages 656-659, XP010666335, DOI: 10.1109/PVSC.2002.1190650 ISBN: 978-0-7803-7471-3
  • Atsushi Miyama ET AL: "Fabrication of Zn-doped Cu(In,Ga)Se 2 thin film solar cells prepared by Zn diffusion from the gas phase using dimethylzinc", Physica Status Solidi. C: Current Topics in Solid State Physics, vol. 6, no. 5, 1 May 2009 (2009-05-01), pages 1213-1216, XP055540891, DE ISSN: 1862-6351, DOI: 10.1002/pssc.200881169
  
Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).


Description

BACKGROUND



[0001] The invention relates to a solar cell.

[0002] Recently, as energy consumption is increased, the development on a solar cell to convert solar energy into electrical energy has been performed.

[0003] In particular, a CIGS-based solar cell has been extensively used, in which the CIGS-based solar cell is a PN hetero junction device having a substrate structure including a glass substrate, a metallic back electrode layer, a P type CIGS-based light absorbing layer, a high resistance buffer layer, and an N type electrode layer.

[0004] In addition, studies have been performed to improve electrical characteristics such as low resistance and high transmittance in a solar cell.

[0005] Document GLATZEL T ET AL: "(Zn,Mg)O AS WINDOW LAYER FOR Cd-FREECHALCOPYRITE SOLAR CELLS", 17TH. E.C. PHOTOVOLTAIC SOLAR ENERGY CONFERENCE. MUNICH, GERMANY, OCT. 22 -26, 2001; [PROCEEDINGS OF THE INTERNATIONALPHOTOVOLTAIC SOLAR ENERGY CONFERENCE], MUNICH : WIP-RENEWABLE ENERGIES, DE, vol. CONF. 17, 22 October 2001(2001-10-22), pages 1151-1154, XP001139644, ISBN:978-3-936338-08-9, document TAKAYUKI NEGAMI ET AL: "Cd free CIGS solar cells fabricated by dry processes", CONFERENCE RECORD OF THE IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 INSTITUTEOF ELECTRICAL AND ELECTRONICS ENGINEERS INC. US; [IEEEPHOTOVOLTAIC SPECIALISTS CONFERENCE], CONFERENCERECORD OF THE 29TH IEEE PHOTOVOLTAIC SPECIALISTSCONFERENCE - 200, vol. CONF. 29, 19 May 2002 (2002-05-19),pages 656-659, XP010666335, DOI: 10.1109/PVSC.2002.1190650ISBN: 978-0-7803-7471-3, and document Atsushi Miyama et al: "Fabrication of Zn-doped Cu(ln,Ga)Se 2 thin film solar cells prepared by Zn diffusion from the gas phase using dimethylzinc",Physica Status Solidi. C: Current Topics in Solid State Physics, vol. 6, no. 5, 1 May 2009 (2009-05-01), pages 1213-1216, XP055540891 disclose various type of solar cells.

SUMMARY



[0006] The invention provides a solar cell representing high productivity with improved efficiency.

[0007] According to the invention, a solar cell according to claim 1 is disclosed.

[0008] As described above, the invention can provide a solar cell capable of solving the problems related to environmental pollution due to the buffer layer without cadmium.

[0009] The invention can provide a solar cell capable of improving productivity by consecutively performing the manufacturing process because the buffer and window layers are formed through the same PVD process.

[0010] The invention can provide a solar cell capable of increasing short circuit current density by increasing the transmittance due to the buffer layer including zinc, so that the photoelectric conversion efficiency can be improved.

BRIEF DESCRIPTION OF THE DRAWINGS



[0011] 

FIG. 1 is a sectional view showing a solar cell according to the embodiment; and

FIGS. 2 to 5 are sectional views showing a method for manufacturing a solar cell panel according to the embodiment.


DETAILED DESCRIPTION OF THE EMBODIMENTS



[0012] In the description of the embodiments, it will be understood that, when a layer (or film), a region, a pattern, or a structure is referred to as being "on" or "under" another substrate, another layer (or film), another region, another pad, or another pattern, it can be "directly" or "indirectly" over the other substrate, layer (or film), region, pad, or pattern, or one or more intervening layers may also be present. Such a position of the layer has been described with reference to the drawings. The thickness and size of each layer shown in the drawings may be exaggerated, omitted or schematically drawn for the purpose of convenience or clarity. In addition, the size of elements does not utterly reflect an actual size.

[0013] FIG. 1 is a sectional view showing a solar cell according to the embodiment. Referring to FIG. 1, a solar cell panel includes a support substrate 100, a back electrode layer 200, a light absorbing layer 300, a buffer layer 400, and a window layer 500.

[0014] The support substrate 100 has a plate shape and supports the back electrode layer 200, the light absorbing layer 300, the buffer layer 400, and the window layer 500.

[0015] The support substrate 100 may include an insulator. The support substrate 100 may include glass, polymer, or metal. In more detail, the support substrate 100 may include a soda lime glass substrate.

[0016] If the support substrate 100 includes soda lime glass, sodium (Na) contained in the soda lime glass may be diffused into the light absorbing layer 300 including CIGS when manufacturing the solar cell. Accordingly, the concentration of charges of the light absorbing layer 300 may be increased. Therefore, the photoelectric conversion efficiency of the solar cell may be increased.

[0017] In addition, the support substrate 100 may include a ceramic substrate including alumina, stainless steel, or polymer having flexibility. Therefore, the support substrate 100 may be transparent, rigid, or flexible.

[0018] The back electrode layer 200 is provided on the support substrate 100. The back electrode layer 200 is a conductive layer. The back electrode layer 200 moves charges generated from the light absorbing layer 300 of the solar cell so that current can flow to the outside of the solar cell. The back electrode layer 200 must represent high electrical conductivity or low resistivity to perform the functions.

[0019] In addition, since the back electrode layer 200 makes contact with a CIGS compound constituting the light absorbing layer 300, the back electrode layer 200 must make ohmic contact with the light absorbing layer 300, so that low contact resistance can be made.

[0020] The back electrode layer 200 must maintain stability under the high-temperature condition when the heat treatment process is performed under sulfur (S) or selenium (Se) atmosphere as the CIGS compound is formed. In addition, the back electrode layer 200 must represent a superior adhesive property with respect to the support substrate 100 such that the back electrode layer 200 is not delaminated from the support substrate 100 due to the difference in the thermal expansion coefficient between the back electrode layer 200 and the support substrate 100.

[0021] The back electrode layer 200 may include one selected from the group consisting of molybdenum (Mo), gold (Au), aluminum (Al), chrome (Cr), tungsten (W), and copper (Cu). Among them, the Mo represents the low thermal expansion coefficient difference with respect to the support substrate 100 as compared with other elements. Accordingly, the Mo represents a superior adhesive property with respect to the support substrate 100 to prevent the back electrode layer 200 from being delaminated the support substrate 100. In addition, the Mo satisfies the characteristics required with respect to the back electrode layer 200.

[0022] The back electrode layer 200 may include at least two layers. In this case, the layers include the same metal, or different metals.

[0023] The light absorbing layer 300 may be formed on the back electrode layer 200. The light absorbing layer 300 includes a P type semiconductor compound. In more detail, the light absorbing layer 300 includes group I-III-V compounds. For example, the light absorbing layer 300 may have a Cu-In-Ga-Se-based crystal structure (Cu(In,Ga)Se2;CIGS).

[0024] The energy band gap of the light absorbing layer 300 may be in the range of about 1.1eV to about 1.2eV.

[0025] The buffer layer 400 is provided on the light absorbing layer 300. In a solar cell including a CIGS compound constituting the light absorbing layer 300, a PN junction is formed between a CIGS compound thin film including a P type semiconductor and the window layer 500 including an N type semiconductor. However, since two above materials represent great difference in a lattice constant and band gap energy, a buffer layer having the intermediate band gap between the band gaps of the two materials is required in order to form a superior junction.

[0026] The buffer layer in comparative examples, not forming part of the invention, may include CdS or ZnS, and the CdS represents superior generating efficiency of the solar cell. However, a buffer layer including cadmium (Cd) causes environmental pollution. To this regard, according to the embodiment, the buffer layer 400 includes an organic metallic compound including zinc (Zn) instead of the CdS buffer layer.

[0027] According to the invention, the buffer layer is formed from a chemical compound (MgxZn1-x)O, in which the x has a value in a range of 0.1 to 0.5.

[0028] In the chemical formula of the buffer layer 400, the x has a value in the range of about 0.1 to about 0.5. The buffer layer 400 may have energy band gap in the range of about 3.3eV to about 3.6eV, and have a thickness in the range of about 10nm to about 100nm.

[0029] A zinc diffusion layer 350 may be formed at the contact region between the light absorbing layer 300 and the buffer layer 400. The zinc diffusion layer 350 is formed by the diffusion of Zn, which is contained in the buffer layer 400 when the buffer layer 400 is formed, into the light absorbing layer 300. For example, the zinc diffusion layer 350 may represent as a chemical formula of CIGS:Zn.

[0030] The zinc diffusion layer 350 may have a thickness of about 10nm to about 100nm. Since the zinc diffusion layer 350 includes an N type semiconductor. Since the buffer layer 400 including the N type semiconductor and the zinc diffusion layer 350 form homo-junction, the recombination of carriers can be reduced at the boundary surface between the light absorbing layer 300 and the buffer layer 400, so that the electrical characteristic of the solar cell can be improved.

[0031] The energy band gap of the zinc diffusion layer 350 may be in the range of about 2.4eV to about 2.8eV.

[0032] The window layer 500 is formed on the buffer layer 400. The window layer 500 is a transparent conductive layer. In addition, the resistance of the window layer 500 is higher than that of the back electrode layer 200.

[0033] The window layer 500 has a chemical formula of (ZnO:Ga).

[0034] For example, according to the embodiment, the window layer 500 may include Ga doped zinc oxide (ZnO:Ga). The mass ratio of Ga in the ZnO:Ga may be in the range of about 0.1% to about 3%. The mass ratio having the range is required to form the window layer 500 having energy band gap higher than that of the buffer layer 400, and the energy band gap of the window layer 500 may be in the range of about 3.6eV to about 3.8eV.

[0035] According to the solar cell of the embodiment, the buffer layer 400 without Cd is formed, so that the problems related to the environmental pollution can be solved. In addition, since the buffer layer 400 includes Zn, transmittance can be increased, so that short circuit current density Jsc can be increased.

[0036] In addition, since the buffer layer 400 and the window layer 500 are formed through the same PVD (Physical Vapor Deposition) process, the manufacturing process can be consecutively performed, so that productivity can be improved.

[0037] FIGS. 2 to 5 are sectional views showing the method for manufacturing the solar cell according to the embodiment. The description about the method for manufacturing the solar cell will be made based on the above description about the solar cell. The description about the solar cell may be basically linked with the description about the method for manufacturing the solar cell.

[0038] Referring to FIG. 2, after forming the back electrode layer 200 on the support substrate 100, the back electrode layer 200 may be deposited by using Mo. The back electrode layer 200 may be formed through the PVD scheme or a plating scheme.

[0039] In addition, an additional layer such as an anti-diffusion layer may be interposed between the support substrate 100 and the back electrode layer 200.

[0040] Referring to FIG. 3, the light absorbing layer 300 is formed on the back electrode layer 200.

[0041] For example, the light absorbing layer 300 may be formed through various schemes such as a scheme of forming a Cu(In,Ga)Se2 (CIGS) based-light absorbing layer 300 by simultaneously or separately evaporating Cu, In, Ga, and Se and a scheme of performing a selenization process after a metallic precursor film has been formed.

[0042] Regarding the details of the selenization process after the formation of the metallic precursor layer, the metallic precursor layer is formed on the back contact electrode 200 through a sputtering process employing a Cu target, an In target, or a Ga target.

[0043] Thereafter, the metallic precursor layer is subject to the selenization process so that the Cu(In,Ga)Se2 (CIGS) based-light absorbing layer 300 is formed.

[0044] Different from the above, the sputtering process employing the Cu target, the In target, and the Ga target and the selenization process may be simultaneously performed.

[0045] Referring to FIG. 4, the buffer layer 400 is formed on the light absorbing layer 300. The buffer layer 400 may include Zn. The buffer layer 400 includes MgZnO, which is an organic metallic compound including Mg or O according to the present embodiment. The buffer layer 400 may be formed through the PVD scheme, and may have a thickness of about 10nm to about 100nm.

[0046] The zinc diffusion layer 350 may be formed by the diffusion of Zn, which is contained in the buffer layer 400, into the light absorbing layer 300. The zinc diffusion layer 350 may have an intermediate band gap between band gaps of the light absorbing layer 300 and the buffer layer 400. For example, the zinc diffusion layer 350 may have a band gap in the range of about 2.2eV to about 2.8eV.

[0047] Referring to FIG. 5, the window layer 500 is formed on the buffer layer 400. The window layer 500 is formed by depositing a transparent conductive material on the buffer layer 400.

[0048] As described above, the embodiment can provide a solar cell capable of solving problems related to environmental pollution by employing a buffer layer without cadmium.

[0049] The embodiment can provide a solar cell capable of improving productivity by consecutively performing the manufacturing process because the buffer and window layers are formed through the same vacuum process.

[0050] In addition, the embodiment can provide a solar cell capable of increasing short circuit current density by increasing the transmittance due to the buffer layer including Zn, so that the photoelectric conversion efficiency can be improved.

[0051] Any reference in this specification to "one embodiment," "an embodiment," "example embodiment," etc., means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention. The appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment. Further, when a particular feature, structure, or characteristic is described in connection with any embodiment, it is submitted that it is within the purview of one skilled in the art to effect such feature, structure, or characteristic in connection with other ones of the embodiments.

[0052] More particularly, various variations and modifications are possible in the component parts and/or arrangements of the subject combination arrangement within the scope of the disclosure, the drawings and the appended claims. In addition to variations and modifications in the component parts and/or arrangements, alternative uses will also be apparent to those skilled in the art.


Claims

1. A solar cell comprising:

a substrate (100);

a back electrode layer (200) on the substrate (100);

a light absorbing layer on the back electrode layer;

a buffer layer (400) on the light absorbing layer (300, 350); and

a window layer (500) on the buffer layer (400),

wherein the buffer layer (400) is formed from a chemical compound (MgxZn1-x)O, in which the x has a value in a range of 0.1 to 0.5 and its band gap energy is in a range of 3.3eV to 3.6eV,

characterized in that

the light absorbing layer (300, 350) is a copper(Cu)-indium(In)-gallium(Ga)-selenium(Se) crystal based light absorbing layer (300, 350) comprising a first portion (300) and a second portion (350) on the back electrode layer (200);

wherein the first portion (300) of the light absorbing layer has a chemical formula of (Cu(In,Ga)Se2) and is disposed on the back electrode layer (200),

wherein the second portion (350) of the light absorbing layer which further comprises zinc(Zn) has a chemical formula of (Cu(In,Ga)Se2):Zn and is formed between the first portion (300) of the light absorbing layer and the buffer layer (400),

wherein window layer (500) has a chemical formula of (ZnO:Ga),

wherein a mass ratio of Ga in the ZnO:Ga of the window layer is in a range of 0.1% to 3%,

wherein a band gap energy of the first portion (300) of the light absorbing layer is in a range of 1.1eV to 1.2eV,

wherein the band gap energy of the second portion (350) of the light absorbing layer is in a range of 2.4eV to 2.8eV,and

wherein the band gap energy of the window layer (500) is in a range of 3.6eV to 3.8eV.


 
2. The solar cell of claim 1, wherein the buffer layer (400) has a thickness in a range of about 10nm to 100nm.
 
3. The solar cell of claim 1, wherein the second portion (350) of the light absorbing layer has a thickness in a range of 10 nm to 100 nm.
 
4. The solar cell of claim 1, wherein the substrate (100) includes at least one of glass and polymer metal.
 
5. The solar cell of claim 1, wherein the first portion (300) of the light absorbing layer includes a P type semiconductor compound,
wherein the second portion (350) of the light absorbing layer includes an N type semiconductor, and wherein the window layer (500) includes another N type semiconductor.
 
6. The solar cell of claim 1, wherein the back electrode layer (200) include one selected from the group consisting of molybdenum (Mo), gold (Au), aluminum (Al), chrome (Cr), tungsten (W), and copper (Cu).
 


Ansprüche

1. Solarzelle, umfassend:

ein Substrat (100);

eine Rückelektrodenschicht (200) auf dem Substrat (100) ;

eine lichtabsorbierende Schicht auf der Rückelektrodenschicht;

eine Pufferschicht (400) auf der lichtabsorbierenden Schicht (300, 350); und

eine Fensterschicht (500) auf der Pufferschicht (400),

wobei die Pufferschicht (400) aus einer chemischen Verbindung (MgxZn1-x)O gebildet ist, in der das x einen Wert in einem Bereich von 0,1 bis 0,5 aufweist, und ihre Bandlückenenergie in einem Bereich von 3,3 eV bis 3,6 eV liegt,

dadurch gekennzeichnet, dass

die lichtabsorbierende Schicht (300, 350) eine Kupfer(CU)-Indium(In)-Gallium(Ga)-Selen(Se) Kristallbasierte lichtabsorbierende Schicht (300, 350) ist, die einen ersten Abschnitt (300) und einen zweiten Abschnitt (350) auf der Rückelektrodenschicht (200) umfasst;

wobei der erste Abschnitt (300) der lichtabsorbierenden Schicht eine chemische Formel von (Cu(In,Ga)Se2) aufweist und auf der Rückelektrodenschicht (200) angeordnet ist,

wobei der zweite Abschnitt (350) der lichtabsorbierenden Schicht, der weiter Zink (Zn) umfasst, eine chemische Formel von (Cu(In,Ga)Se2):Zn aufweist und zwischen dem ersten Abschnitt (300) der lichtabsorbierenden Schicht und der Pufferschicht (400) gebildet ist,

wobei die Fensterschicht (500) eine chemische Formel von (ZnO:Ga) aufweist,

wobei ein Massenverhältnis von Ga im ZnO:Ga der Fensterschicht in einem Bereich von 0,1 % bis 3 % liegt,

wobei eine Bandlückenenergie des ersten Abschnitts (300) der lichtabsorbierenden Schicht in einem Bereich von 1,1 eV bis 1,2 eV liegt,

wobei die Bandlückenenergie des zweiten Abschnitts (350) der lichtabsorbierenden Schicht in einem Bereich von 2,4 eV bis 2,8 eV liegt, und

wobei die Bandlückenenergie der Fensterschicht (500) in einem Bereich von 3,6 eV bis 3,8 eV liegt.


 
2. Solarzelle nach Anspruch 1, wobei die Pufferschicht (400) eine Dicke in einem Bereich von etwa 10 nm bis 100 nm aufweist.
 
3. Solarzelle nach Anspruch 1, wobei der zweite Abschnitt (350) der lichtabsorbierenden Schicht eine Dicke in einem Bereich von 10 nm bis 100 nm aufweist.
 
4. Solarzelle nach Anspruch 1, wobei das Substrat (100) mindestens eines aus Glas und Polymermetall einschließt.
 
5. Solarzelle nach Anspruch 1, wobei der erste Abschnitt (300) der lichtabsorbierenden Schicht eine P-Typ-Halbleiterverbindung einschließt,
wobei der zweite Abschnitt (350) der lichtabsorbierenden Schicht einen N-Typ-Halbleiter einschließt, und wobei die Fensterschicht (500) einen weiteren N-Typ-Halbleiter einschließt.
 
6. Solarzelle nach Anspruch 1, wobei die Rückelektrodenschicht (200) eines einschließt, ausgewählt aus der Gruppe bestehend aus Molybdän (Mo), Gold (Au), Aluminium (Al), Chrom (Cr), Wolfram (W), und Kupfer (Cu).
 


Revendications

1. Cellule solaire comprenant :

un substrat (100) ;

une couche d'électrode arrière (200) sur le substrat (100) ;

une couche d'absorption de lumière sur la couche d'électrode arrière ;

une couche tampon (400) sur la couche d'absorption de lumière (300, 350) ; et

une couche fenêtre (500) sur la couche tampon (400),

dans laquelle la couche tampon (400) est formée à partir d'un composé chimique (MgxZn1-x)O, dans lequel le x a une valeur dans une plage de 0,1 à 0,5 et son énergie de bande interdite est dans une plage de 3,3 eV à 3, 6 eV,

caractérisée en ce que

la couche d'absorption de lumière (300, 350) est une couche d'absorption de lumière (300, 350) à base de cristaux de cuivre(Cu)-indium(In)-gallium(Ga)-sélénium(Se) comprenant une première portion (300) et une seconde portion (350) sur la couche d'électrode arrière (200) ;

dans laquelle la première portion (300) de la couche d'absorption de lumière a une formule chimique de (Cu(In, Ga)Se2) et est disposée sur la couche d'électrode arrière (200),

dans laquelle la seconde portion (350) de la couche d'absorption de lumière qui comprend en outre du zinc (Zn) a une formule chimique de (Cu(In, Ga)Se2) :Zn et est formée entre la première portion (300) de la couche d'absorption de lumière et la couche tampon (400),

dans laquelle la couche fenêtre (500) a une formule chimique de (ZnO:Ga),

dans laquelle un rapport massique de Ga dans la ZnO:Ga de la couche fenêtre est dans une plage de 0,1 % à 3 %,

dans laquelle une énergie de bande interdite de la première portion (300) de la couche d'absorption de lumière est dans une plage de 1,1 eV à 1,2 eV,

dans laquelle l'énergie de bande interdite de la seconde portion (350) de la couche d'absorption de lumière est dans une plage de 2,4 eV à 2,8 eV, et

dans laquelle l'énergie de bande interdite de la couche fenêtre (500) est dans une plage de 3, 6 eV à 3,8 eV.


 
2. Cellule solaire selon la revendication 1, dans laquelle la couche tampon (400) a une épaisseur dans une plage d'environ 10 nm à 100 nm.
 
3. Cellule solaire selon la revendication 1, dans laquelle la seconde portion (350) de la couche d'absorption de lumière a une épaisseur dans une plage de 10 nm à 100 nm.
 
4. Cellule solaire selon la revendication 1, dans laquelle le substrat (100) comporte au moins l'un parmi du verre et un métal polymère.
 
5. Cellule solaire selon la revendication 1, dans laquelle la première portion (300) de la couche d'absorption de lumière comporte un composé semi-conducteur de type P,
dans laquelle la seconde portion (350) de la couche d'absorption de lumière comporte un semi-conducteur de type N, et dans laquelle la couche fenêtre (500) comporte un autre semi-conducteur de type N.
 
6. Cellule solaire selon la revendication 1, dans laquelle la couche d'électrode arrière (200) comporte l'un sélectionné à partir du groupe constitué du molybdène (Mo), de l'or (Au), de l'aluminium (Al), du chrome (Cr), du tungstène (W) et du cuivre (Cu).
 




Drawing






REFERENCES CITED IN THE DESCRIPTION



This list of references cited by the applicant is for the reader's convenience only. It does not form part of the European patent document. Even though great care has been taken in compiling the references, errors or omissions cannot be excluded and the EPO disclaims all liability in this regard.

Non-patent literature cited in the description