(19)
(11)EP 2 706 572 B1

(12)EUROPEAN PATENT SPECIFICATION

(45)Mention of the grant of the patent:
20.05.2020 Bulletin 2020/21

(21)Application number: 13183248.7

(22)Date of filing:  05.09.2013
(51)Int. Cl.: 
H01L 27/15  (2006.01)
H01L 33/22  (2010.01)
H01L 33/40  (2010.01)
H01L 33/62  (2010.01)
H01L 33/38  (2010.01)
H01L 33/44  (2010.01)

(54)

LIGHT EMITTING DEVICE

LICHTEMITTIERENDE VORRICHTUNG

DISPOSITIF ÉLECTROLUMINESCENT


(84)Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

(30)Priority: 06.09.2012 KR 20120098713

(43)Date of publication of application:
12.03.2014 Bulletin 2014/11

(73)Proprietor: LG Innotek Co., Ltd.
Seoul, 04637 (KR)

(72)Inventor:
  • Jeong, Hwan Hee
    100-714 Seoul (KR)

(74)Representative: Zardi, Marco 
M. Zardi & Co. SA Via Pioda 6
6900 Lugano
6900 Lugano (CH)


(56)References cited: : 
EP-A1- 2 375 460
US-A1- 2010 308 358
US-A1- 2012 043 563
EP-A2- 2 290 689
US-A1- 2011 297 972
  
      
    Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).


    Description

    BACKGROUND



    [0001] The present disclosure relates to a light emitting device, a light emitting device package, and a light unit.

    [0002] A light emitting diode (LED) has been extensively used as one of light emitting devices. The LED converts electrical signals into the form of light such as infra-red light, ultra-violet light, and visible light by using the characteristic of a compound semiconductor.

    [0003] As the light efficiency of the light emitting device is increased, the LED has been used in various fields such as display apparatuses and lighting appliances. US 2011/297972 A1, US 2010/308358 A1, EP 2375460 A1, US 2012/043563 A1, EP 2290689A2 disclose light emitting devices of state of the art.

    SUMMARY



    [0004] The present invention provides a light emitting device in accordance with the appended claim 1 capable of preventing current concentration while improving electrical reliability.

    [0005] Advantageous, further embodiments of the present invention are the object of the appended dependent claims.

    [0006] Also provided are a light emitting device package including the light emitting device of the present invention, and a light unit including the same.

    [0007] The flight emitting device according to the present invention includes a conductive support member; a first light emitting structure on the conductive support member, the first light emitting structure comprising a first conductivity type first semiconductor layer, a first active layer under the first conductivity type first semiconductor layer, and a second conductivity type second semiconductor layer under the first active layer; a second light emitting structure on the conductive support member, the second light emitting structure comprising a first conductivity type third semiconductor layer, a second active layer under the first conductivity type third semiconductor layer, and a second conductivity type fourth semiconductor layer under the second active layer; a channel layer around lower portions of the first and second light emitting structures, the channel layer being an etching stopper when an isolation processing is performed with respect to the first and second light emitting structures; a first electrode electrically connected to the first conductivity type first semiconductor layer; a second electrode electrically connected to the second conductivity type second semiconductor layer; a third electrode electrically connected to the first conductivity type third semiconductor layer; a fourth electrode electrically connected to the second conductivity type fourth semiconductor layer; a first connection part electrically connected to the first electrode; a second connection part electrically connected to the second and third electrodes; and a third connection part electrically connected to the fourth electrode and haying one end provided on the channel layer, characterized in that the first connection part is electrically connected to the conductive support member such that an electric power is supplied to the first and second light emitting structures through the conductive support member and the third connection part, and the channel layer surrounds the first active layer, the second active layer, the second conductivity type second semiconductor layer, and the second conductivity type fourth semiconductor layer such that the channel layer insulates the first connection part from the first active layer and from the second conductivity type second semiconductor layer.

    [0008] According to an embodiment, the first electrode may be provided on the first conductivity type first semiconductor layer.

    [0009] According to an embodiment, the second electrode may be disposed between the second conductivity type second semiconductor layer and the conductive support member.

    [0010] According to an embodiment, the third electrode may be provided on the first conductivity type third semiconductor layer.

    [0011] According to an embodiment, the fourth electrode may be disposed between the second conductivity type fourth semiconductor layer and the conductive support member.

    [0012] According to an embodiment, one end of the third connection part may be spaced apart from a lateral side of the second light emitting structure and exposed to the lateral side of the second light emitting structure.

    [0013] According to an embodiment, a top surface of the channel layer may be higher than top surfaces of the first and second active layers.

    [0014] According to an embodiment, the light emitting device may further comprise an insulating layer provided between the second electrode and the conductive support member and between the fourth electrode and the conductive support member.

    [0015] According to the previous embodiment, a top surface of the insulating layer may be exposed to a periphery of a bottom portion of the second light emitting structure.

    [0016] According to the same previous embodiment, the insulating layer may surround a periphery of the channel layer.

    [0017] According to an embodiment, the first connection part may make contact with a lateral side of the first conductivity type first semiconductor layer.

    [0018] According to an embodiment, the first connection part may be passing through the channel layer.

    [0019] According to an embodiment, the light emitting device may further comprise a roughness on the first and second light emitting structures.

    [0020] The present invention provides a light emitting device capable of preventing current concentration while improving electrical reliability. Also provided are a light emitting device package including the light emitting device of the present invention, and a light unit including the same.

    BRIEF DESCRIPTION OF THE DRAWINGS



    [0021] 

    FIG. 1 is a view showing a light emitting device according to an embodiment of the present invention;

    FIGS. 2 to 6 are sectional views showing a method of fabricating the light emitting device according to the embodiment of FIG. 1;

    FIG. 7 is a sectional view showing another example of a light emitting device according to another embodiment of the present invention;

    FIGS. 8 and 9 are sectional views showing modifications, still in accordance with the present invention, of the light emitting device according to the embodiment of FIG. 1;

    FIG. 10 is a view showing a light emitting device package including a light emitting device according to the present invention;

    FIG. 11 is a view showing a display device including a light emitting device according to the present invention;

    FIG. 12 is a view showing another example of a display device including a light emitting device according to the present invention; and

    FIG. 13 is a view showing a light unit including a light emitting device according to the present invention.


    DETAILED DESCRIPTION OF THE EMBODIMENTS



    [0022] In the description of the embodiments, it will be understood that when a layer (or film), a region, a pattern, or a structure is referred to as being "on" or "under" another substrate, another layer (or film), another region, another pad, or another pattern, it can be "directly" or "indirectly" over the other substrate, layer (or film), region, pad, or pattern, or one or more intervening layers may also be present. Such a position of the layer has been described with reference to the drawings.

    [0023] The thickness and size of each layer shown in the drawings may be exaggerated, omitted or schematically drawn for the purpose of convenience or clarity. In addition, the size of elements does not utterly reflect an actual size.

    [0024] Hereinafter, a light emitting device, a light emitting device package, a light unit, and a method for fabricating the light emitting device will be described in detail with reference to accompanying drawings.

    [0025] FIG. 1 is a view showing a light emitting device according to an embodiment of the present invention.

    [0026] As shown in FIG. 1, the light emitting device according to the embodiment comprises a first light emitting structure 10, a second light emitting structure 20, first to fourth electrodes 80, 83, 85 and 87, and a conductive support member 70.

    [0027] Although it is shown in FIG. 1 as one example that the first and second light emitting structures 10 and 20 are provided over the conductive support member 70, three light emitting structures or more may be provided over the conductive support member 70. The light emitting structures are electrically connected to each other. For example, light emitting structures may be electrically connected in series to each other.

    [0028] The first light emitting structure 10 comprises a first conductivity type (abbreviated, in the rest of the description, as: first conductive) first semiconductor layer 11, a first active layer 12, and a second conductivity type (abbreviated, in the rest of the description, as: second conductive) second semiconductor layer 13. The first active layer 12 is disposed between the first conductive first semiconductor layer 11 and the second conductive second semiconductor layer 13. The first active layer 12 is provided under the first conductive first semiconductor layer 11, and the second conductive second semiconductor layer 13 is provided under the first active layer 12.

    [0029] The first conductive first semiconductor layer 11 may comprise an N-type semiconductor layer doped with N-type dopants serving as first conductive dopants, and the second conductive second semiconductor layer 13 may comprise a P-type semiconductor layer doped with P-type dopants serving as second conductive dopants. Alternatively, the first conductive first semiconductor layer 11 may comprise a P-type semiconductor layer, and the second conductive second semiconductor layer 13 may comprise an N-type semiconductor layer.

    [0030] For example, the first conductive first semiconductor layer 11 may comprise an N-type semiconductor layer. The first conductive first semiconductor layer 11 may be implemented by using a compound semiconductor. The first conductive first semiconductor layer 11 may be implemented by using a group II-VI compound semiconductor, or a group III-V compound semiconductor.

    [0031] For example, the first conductive first semiconductor layer 11 may be implemented by using a semiconductor material having a compositional formula of InxAlyGa1-x-yN (0≤x≤1, 0 ≤y≤1, 0≤x+y≤1). For example, the first conductive first semiconductor layer 11 may comprise one selected from the group consisting of GaN, A1N, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP doped with N-type dopants such as Si, Ge, Sn, Se, and Te.

    [0032] The first active layer 12 emits light having a wavelength corresponding to the energy band gap difference according to materials constituting the active layer 13 through the combination of electrons (or holes) injected through the first conductive first semiconductor layer 11 and holes (or electrons) injected through the second conductive second semiconductor layer 13. The first active layer 12 may have one of a single quantum well (SQW) structure, a multi-quantum well (MQW) structure, a quantum dot structure, and a quantum wire structure, but the embodiment is not limited thereto.

    [0033] For example, the first active layer 12 may be implemented by using a compound semiconductor. The first active layer 12 may be implemented by using a semiconductor material having a compositional formula of InxAlyGa1-x-yN (0≤ x ≤ 1, 0 ≤ y ≤ 1, 0 ≤ x+y ≤ 1). When the first active layer 12 has an MQW structure, the first active layer 12 may be formed by stacking a plurality of well layers and a plurality of barrier layers. For example, the first active layer 12 may have a cycle of InGaN well layer/GaN barrier layer.

    [0034] For example, the second conductive second semiconductor layer 13 may comprise a P-type semiconductor layer. The second conductive second semiconductor layer 13 may be implemented by using a compound semiconductor. For example, the second conductive second semiconductor layer 13 may be implemented by using a group II-VI compound semiconductor, or a group II-V compound semiconductor.

    [0035] For example, the second conductive second semiconductor layer 13 may be implemented by using a semiconductor material having a compositional formula of InxAlyGa1-x-yN (0≤x≤1, 0≤y≤1, 0≤x+y≤1). For example, the second conductive second semiconductor layer 13 may comprise one selected from the group consisting of GaN, A1N, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP doped with P-type dopants such as Mg, Zn, Ca, Sr, and Ba.

    [0036] Meanwhile, the first conductive first semiconductor layer 11 may comprise a P-type semiconductor layer and the second conductive second semiconductor layer 13 may comprise the N-type semiconductor layer. In addition, a semiconductor layer comprising an N-type or P-type semiconductor layer may be additionally provided under the second conductive second semiconductor layer 13. Accordingly, the first light emitting structure 10 may have at least one of an NP junction structure, a PN junction structure, an NPN junction structure, or a PNP junction structure. In addition, impurities may be doped into the first conductive first semiconductor layer 11 and the second conductive second semiconductor layer 13 with uniform or non-uniform doping concentration. In other words, the first light emitting structure 10 may have various structures, but the embodiment is not limited thereto.

    [0037] In addition, a first conductive InGaN/GaN superlattice structure or InGaN/InGaN superlattice structure may be formed between the first conductive first semiconductor layer 11 and the first active layer 12. In addition, a second conductive AlGaN layer may be formed between the second conductive second semiconductor layer 13 and the first active layer 12.

    [0038] The second light emitting structure 20 comprises a first conductive third semiconductor layer 21, a second active layer 22, and a second conductive fourth semiconductor layer 23. The second active layer 22 is disposed between the first conductive third semiconductor layer 21 and the second conductive fourth semiconductor layer 23. The second active layer 22 is provided under the first conductive third semiconductor layer 21, and the second conductive fourth semiconductor layer 23 is provided under the second active layer 22.

    [0039] The configuration and composition of the second light emitting structure 20 may be similar to those of the first light emitting structure 10.

    [0040] The light emitting device according to the embodiment comprises a channel layer 30 provided at peripheral portions of lower portions of the first and second light emitting structure 10 and 20. For example, a top surface of the channel layer 30 may be provided higher than a top surface of the first active layer 12 and a top surface of the second active layer 22.

    [0041] The channel layer 30 surrounds the first active layer 12. The channel layer 30 also surrounds a peripheral portion of the second conductive second semiconductor layer 13. One end of the channel layer 30 may be provided under the second conductive second semiconductor layer 13. The one end of the channel layer 30 may make contact with a bottom surface of the second conductive second semiconductor layer 13. The one end of the channel layer 30 may be disposed between the second conductive second semiconductor layer 13 and the second electrode 83. The one end of the channel layer 30 may be disposed between the second conductive second semiconductor layer 13 and a first reflective layer 17.

    [0042] The channel layer 30 surrounds the second active layer 22. The channel layer 30 also surrounds a peripheral portion of the second conductive fourth semiconductor layer 23. One end of the channel layer 30 may be provided under the second conductive fourth semiconductor layer 23. The one end of the channel layer 30 may make contact with a bottom surface of the second conductive fourth semiconductor layer 23. The one end of the channel layer 30 may be disposed between the second conductive fourth semiconductor layer 23 and the fourth electrode 87. The one end of the channel layer 30 may be disposed between the second conductive fourth semiconductor layer 23 and a second reflective layer 27.

    [0043] For example, the channel layer 30 may be implemented by using an oxide or a nitride. For example, the channel layer 30 may comprise at least one selected from the group consisting of SiO2, SixOy, Si3N4, SixNy, SiOxNy, Al2O3, TiO2, and AlN. The channel layer 30 may be referred to as an isolation layer. The channel layer 30 serves as an etching stopper when an isolation process is performed with respect to the first and second light emitting structures 10 and 20 thereafter. In addition, through the isolation process, the electrical characteristic of the light emitting device can be prevented from being degraded.

    [0044] The first electrode 80 is electrically connected to the first conductive first semiconductor layer 11. The first electrode 80 may be provided on the first conductive first semiconductor layer 11. The first electrode 80 may make contact with the first conductive first semiconductor layer 11. The first reflective layer 17 may be electrically connected to the second conductive second semiconductor layer 13. The first reflective layer 17 may be provided under the first light emitting structure 10. The first reflective layer 17 may be provided under the second conductive second semiconductor layer 13.

    [0045] The light emitting device according to the embodiment may comprise the first ohmic contact layer 15 disposed between the first reflective layer 17 and the second conductive second semiconductor layer 13. The first ohmic contact layer 15 may make contact with the second conductive second semiconductor layer 13.

    [0046] The first ohmic contact layer 15 may make ohmic contact with the first light emitting structure 10. The first ohmic contact layer 15 may comprise a region making ohmic contact with the first light emitting structure 10. The first reflective layer 17 may be electrically connected to the second conductive second semiconductor layer 13. In addition, the first reflective layer 17 reflects light incident thereto from the first light emitting structure 10 to increase the quantity of light extracted to an outside.

    [0047] For example, the first ohmic contact layer 15 may comprise a transparent conductive oxide layer. For example, the first ohmic contact layer 15 may comprise at least one selected from the group consisting of an ITO (Indium Tin Oxide), an IZO (Indium Zinc Oxide), an AZO (Aluminum Zinc Oxide), an AGZO (Aluminum Gallium Zinc Oxide), an IZTO (Indium Zinc Tin Oxide), an IAZO (Indium Aluminum Zinc Oxide), an IGZO (Indium Gallium Zinc Oxide), an IGTO (Indium Gallium Tin Oxide), an ATO (Antimony Tin Oxide), a GZO (Gallium Zinc Oxide), an IZON (IZO Nitride), ZnO, IrOx, RuOx, NiO, Pt, Ag, and Ti.

    [0048] The first reflective layer 17 may comprise a material having high reflectance. For example, the first reflective layer 17 may comprise metal comprising at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, and Hf, and the alloy thereof. In addition, the first reflective layer 17 may be formed in a multi-layer of the metal or the alloy thereof and a transmissive conductive material such as an ITO (Indium-Tin-Oxide), an IZO (Indium-Zinc-Oxide), an IZTO (Indium-Zinc-Tin-Oxide), an IAZO (Indium-Aluminum-Zinc-Oxide), an IGZO (Indium-Gallium-Zinc-Oxide), an IGTO (Indium-Gallium-Tin-Oxide), an AZO (Aluminum-Zinc-Oxide), or an ATO (Antimony-Tin-Oxide). For example, according to the embodiment, the first reflective layer 17 may comprise at least one of Ag, Al, an Ag-Pd-Cu alloy, and an Ag-Cu alloy.

    [0049] For example, the first reflective layer 17 may have a structure in which an Ag layer and a Ni layer are alternately formed, and may comprise Ni/Ag/Ni or a Tl layer, and a Pt layer. In addition, the first ohmic contact layer 15 may be provided under the first reflective layer 17, and at least a portion of the first ohmic contact layer 15 may make ohmic contact with the first light emitting structure 10 through the first reflective layer 17.

    [0050] The light emitting device according to the embodiment may comprise a first metal layer 35 provided under the first reflective layer 17. The first metal layer 35 may comprise at least one of Au, Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, and Mo.

    [0051] According to the embodiment, the second electrode 83 may comprise at least one of the first reflective layer 17, the first ohmic contact layer 15, and the first metal layer 35. For example, the second electrode 83 may comprise all of the first reflective layer 17, the first metal layer 35 and the first ohmic contact layer 15 or may selectively comprise one or two of the first reflective layer 17, the first metal layer 35 and the first ohmic contact layer 15. A lamination sequence of the first reflective layer 17, the first metal layer 35 and the first ohmic contact layer 15 constituting the second electrode 83 may vary.

    [0052] The third electrode 85 is electrically connected to the first conductive third semiconductor layer 21. The third electrode 85 may be provided on the first conductive third semiconductor layer 21. The third electrode 85 may make contact with the first conductive third semiconductor layer 21. The second reflective layer 27 may be electrically connected to the second conductive fourth semiconductor layer 23. The second reflective layer 27 may be provided under the second light emitting structure 20. The second reflective layer 27 may be provided under the second conductive fourth semiconductor layer 23.

    [0053] The light emitting device according to the embodiment may comprise the second ohmic contact layer 25 disposed between the second reflective layer 27 and the second conductive fourth semiconductor layer 23. The second ohmic contact layer 25 may make contact with the second conductive fourth semiconductor layer 23.

    [0054] The second ohmic contact layer 25 may make ohmic contact with the second light emitting structure 20. The second ohmic contact layer 25 may comprise a region making ohmic contact with the second light emitting structure 20. The second reflective layer 27 may be electrically connected to the second conductive fourth semiconductor layer 23. In addition, the second reflective layer 27 reflects light incident thereto from the second light emitting structure 20 to increase the quantity of light extracted to an outside.

    [0055] For example, the second ohmic contact layer 25 may comprise a transparent conductive oxide layer. For example, the second ohmic contact layer 25 may comprise at least one selected from the group consisting of an ITO (Indium Tin Oxide), an IZO (Indium Zinc Oxide), an AZO (Aluminum Zinc Oxide), an AGZO (Aluminum Gallium Zinc Oxide), an IZTO (Indium Zinc Tin Oxide), an IAZO (Indium Aluminum Zinc Oxide), an IGZO (Indium Gallium Zinc Oxide), an IGTO (Indium Gallium Tin Oxide), an ATO (Antimony Tin Oxide), a GZO (Gallium Zinc Oxide), an IZON (IZO Nitride), ZnO, IrOx, RuOx, NiO, Pt, Ag, and Ti.

    [0056] The second reflective layer 27 may comprise a material having high reflectance. For example, the second reflective layer 27 may comprise metal comprising at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, and Hf, and the alloy thereof. In addition, the second reflective layer 27 may be formed in a multi-layer of the metal or the alloy thereof and a transmissive conductive material such as an ITO (Indium-Tin-Oxide), an IZO (Indium-Zinc-Oxide), an IZTO (Indium-Zinc-Tin-Oxide), an IAZO (Indium-Aluminum-Zinc-Oxide), an IGZO (Indium-Gallium-Zinc-Oxide), an IGTO (Indium-Gallium-Tin-Oxide), an AZO (Aluminum-Zinc-Oxide), or an ATO (Antimony-Tin-Oxide). For example, according to the embodiment, the second reflective layer 27 may comprise at least one of Ag, Al, an Ag-Pd-Cu alloy, and an Ag-Cu alloy.

    [0057] For example, the second reflective layer 27 may have a structure in which an Ag layer and a Ni layer are alternately formed, and may comprise Ni/Ag/Ni or a Tl layer, and a Pt layer. In addition, the second ohmic contact layer 25 may be provided under the second reflective layer 27, and at least a portion of the second ohmic contact layer 25 may make ohmic contact with the second light emitting structure 20 through the second reflective layer 27.

    [0058] The light emitting device according to the embodiment may comprise a second metal layer 45 provided under the second reflective layer 27. The second metal layer 45 may comprise at least one of Au, Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, and Mo.

    [0059] According to the embodiment, the fourth electrode 87 may comprise at least one of the second reflective layer 27, the second ohmic contact layer 25, and the second metal layer 45. For example, the fourth electrode 87 may comprise all of the second reflective layer 27, the second metal layer 45 and the second ohmic contact layer 25 or may selectively comprise one or two of the second reflective layer 27, the second metal layer 45 and the second ohmic contact layer 25. A lamination sequence of the second reflective layer 27, the second ohmic contact layer 25 and the second metal layer 45 constituting the fourth electrode 87 may vary.

    [0060] The light emitting device according to the embodiment may comprise a third metal layers 50 provided under the first metal layer 35. The third metal layer 50 may be provided under the second metal layer 45.

    [0061] The third metal layer 50 may comprise at least one of Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, and Mo. The third metal layer 50 may serve as a diffusion barrier layer. A first bonding layer 60 and the conductive support member 70 may be provided under the third metal layer 50.

    [0062] The third metal layer 50 may prevent a material included in the bonding layer 60 from being diffused to the first and second reflective layers 17 and 27 in the process of providing the bonding layer 60. The third metal layer 50 may prevent a material, such as tin (Sn), included in the bonding layer 60 from exerting an influence on the first and second reflective layers 17 and 27.

    [0063] The bonding layer 60 may comprise barrier metal or bonding metal. For example, the bonding layer 60 may comprise at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pd and Ta. The conductive support member 70 supports the first and second light emitting structures 10 and 20 according to the embodiment while performing a heat radiation function. The bonding layer 60 may be implemented in the form of a seed layer.

    [0064] For example, the conductive support member 70 may comprise at least one of semiconductor substrates (e.g., Si, Ge, GaN, GaAs, ZnO, SiC, and SiGe substrates) implanted with Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu-W, or impurities.

    [0065] According to the embodiment, power may be applied to the first light emitting structure 10 through the first and second electrodes 80 and 83. According to the embodiment, the first electrode 80 may comprise an ohmic layer, an intermediate layer and an upper layer. The ohmic layer may comprise a material selected from the group consisting of Cr, V, W, Ti, and Zn, and may make ohmic contact. The intermediate layer may be implemented by using a material selected from the group consisting of Ni, Cu, and Al. For example, the upper layer may comprise Au. The first electrode 80 may comprise at least one selected from the group consisting of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au, and Mo.

    [0066] A roughness may be formed on the top surface of the first conductive first semiconductor layer 11. Accordingly, the quantity of light extracted upward at the region where the roughness is formed can be increased.

    [0067] According to the embodiment, an electric power may be applied to the second light emitting structure 20 through the third and fourth electrodes 85 and 87. According to the embodiment, the third electrode 85 may comprise an ohmic layer, an intermediate layer, and an upper layer. The ohmic layer may comprise a material selected from the group consisting of Cr, V, W, Ti, and Zn, and may make ohmic contact. The intermediate layer may be implemented by using a material selected from the group consisting of Ni, Cu, and Al. For example, the upper layer may comprise Au. The third electrode 85 may comprise at least one selected from the group consisting of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au and Mo.

    [0068] A roughness may be formed on the top surface of the first conductive third semiconductor layer 21. Accordingly, the quantity of light extracted upward at the region where the roughness is formed can be increased.

    [0069] The light emitting device according to the embodiment may comprise an insulating layer 40 disposed between the first metal layer 35 and the third metal layer 50. The insulating layer 40 may insulate the first metal layer 35 from the third metal layer 50. The insulating layer 40 may insulate the first metal layer 35 from the conductive support member 70. For example, the insulating layer 40 may be implemented by using an oxide or a nitride. For example, the insulating layer 40 may comprise at least one selected from the group consisting of SiO2, SixOy, Si3N4, SixNy, SiOxNy, Al2O3, TiO2, and AlN.

    [0070] The insulating layer 40 may surround a peripheral portion of the first metal layer 35. A portion of the insulating layer 40 may make contact with the lateral side of the first reflective layer 17. The top surface of the insulating layer 40 may be exposed to a peripheral portion of the lower portion of the first light emitting structure 10. The insulating layer 40 may surround a peripheral portion of the channel layer 30.

    [0071] The light emitting device according to the embodiment may comprise the insulating layer 40 disposed between the second and third metal layers 45 and 50. The insulating layer 40 may insulate the second and third metal layers 45 and 50 from each other. The insulating layer 40 may insulate the second metal layer 45 and the conductive support member 70 from each other. The insulating layer 40 may be disposed between the first and second metal layers 35 and 45. The insulating layer 40 may insulate the first and second metal layers 35 and 45 from each other.

    [0072] The insulating layer 40 may surround a peripheral portion of the second metal layer 45. A portion of the insulating layer 40 may make contact with the lateral side of the second reflective layer 27. The top surface of the insulating layer 40 may be exposed to a peripheral portion of the lower portion of the second light emitting structure 20. The insulating layer 40 may surround a peripheral portion of the channel layer 30.

    [0073] The light emitting device according to the embodiment comprises first to third connection parts 90, 95 and 97. The first connection part 90 is electrically connected to the first electrode 80 and the conductive support member 70. The second connection part 95 is electrically connected to the second and third electrodes 83 and 85. The third connection part 97 is electrically connected to the fourth electrode 87. One end of the third connection part 97 may be provided over the channel layer 30. The third connection part 97 may be electrically connected to the second reflective layer 27.

    [0074] The first connection part 90 may make contact with the first electrode 80. The first connection part 90 may be electrically connected to the third metal layer 50. The first connection part 90 may make contact with the third metal layer 50. The first connection part 90 is electrically connected to the conductive support member 70, advantageously through the third metal layer 50 and the bonding layer 60. The first connection part 90 may make direct contact with the bonding layer 60 or the conductive support member 70.

    [0075] The first connection part 90 may be provided through the insulating layer 40. In this case, the first connection part 90 is electrically connected to the conductive support member 70 through the insulating layer 40. In addition, the first connection part 90 may be electrically connected to the third metal layer 50 through the channel layer 30. The first connection part 90 may be electrically connected to the third metal layer 50 through the channel layer 30 and the insulating layer 40.

    [0076] The first connection part 90 may be provided at a lateral side of the first light emitting structure 10. The first connection part 90 may be provided at a lateral side of the first conductive first semiconductor layer 11. The first connection part 90 may make contact with the lateral side of the first conductive first semiconductor layer 11. The channel layer 30 insulates the first connection part 90 from the first active layer 12. The channel layer 30 insulates the first connection part 90 from the second conductive second semiconductor layer 13. The first connection part 90 may be spaced apart from the first active layer 12 by at least 3 µm.

    [0077] The second connection part 95 may be provided at a lateral side of the second light emitting structure 20. The second connection part 95 may be provided at a lateral side of the first conductive third semiconductor layer 21. The second connection part 95 may make contact with the lateral side of the first conductive third semiconductor layer 21. The channel layer 30 may insulate the second connection part 95 from the second active layer 22. The channel layer 30 may insulate the second connection part 95 from the second conductive fourth semiconductor layer 23. The second connection part 95 may be spaced apart from the second active layer 22 by at least 3 µm.

    [0078] The third connection part 97 may be electrically connected to the second metal layer 45. The third connection part 97 may make contact with the second metal layer 45. One end of the third connection part 97 is provided on the channel layer 30. One end of the third connection part 97 may be spaced apart from a lateral side of the second light emitting structure 20. One end of the third connection part 97 may be exposed to the lateral side of the second light emitting structure 20.

    [0079] The third connection part 97 may be electrically connected to the second metal layer 45 through the channel layer 30. In addition, the third connection part 97 may be electrically connected to the second metal layer 45 through the insulation layer 40. The third connection part 97 may be electrically connected to the fourth electrode 87. The third connection part 97 may make contact with the fourth electrode 87.

    [0080] The first to third connection parts 90, 95 and 97 may comprise at least one of Cr, V, W, Ti, Zn, Ni, Pt, Cu, Al, Au and Mo.

    [0081] According to the light emitting device of the embodiment, the first electrode 80 is electrically connected to the first conductive first semiconductor layer 11 provided on the second electrode 83 through the conductive support member 70 provided under the second electrode 83. The second electrode 83 may be disposed between the second conductive second semiconductor layer 13 and the conductive support member 70.

    [0082] Thus, an electric power may be provided to the first conductive first semiconductor layer 11 through a scheme of attaching the conductive support member 70 to a bonding pad. In addition, according to the embodiment, the second connection part 95 is electrically connected to the second and third electrodes 83 and 85. The third connection part 97 is electrically connected to the fourth electrode 87. Thus, by connecting the third connection part 97 to a power pad through a wire bonding scheme, an electric power may be supplied to the second conductive second semiconductor layer 13.

    [0083] According to the light emitting device of the embodiment, an electric power is supplied to the first and second light emitting structures 10 and 20 through the conductive support member 70 and the third connection part 97. Therefore, according to the embodiment, current concentration can be prevented, and the electrical reliability can be improved.

    [0084] Hereinafter, a method of fabricating the light emitting device according to the above embodiment will be described with reference to FIGS. 2 to 6.

    [0085] According to the method of fabricating the light emitting device of the embodiment, as shown in FIG. 2, the first conductive semiconductor layer 11a, the active layer 12a, and the second conductive semiconductor layer 13a are formed on a substrate 5. The first conductive semiconductor layer 11a, the active layer 12a, and the second conductive semiconductor layer 13a may be defined as the light emitting structure 10a.

    [0086] For example, the substrate 5 may comprise at least one of a sapphire substrate (Al2O3), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge, but the embodiment is not limited thereto. A buffer layer may be disposed between the first conductive semiconductor layer 11a and the substrate 5.

    [0087] The first conductive semiconductor layer 11a may comprise an N-type semiconductor layer doped with N-type dopants serving as first conductive dopants, and the second conductive semiconductor layer 13a may comprise a P-type semiconductor layer doped with P-type dopants serving as second conductive dopants. Alternatively, the first conductive semiconductor layer 11a may comprise a P-type semiconductor layer, and the second conductive semiconductor layer 13a may comprise an N-type semiconductor layer.

    [0088] For example, the first conductive semiconductor layer 11a may comprise an N-type semiconductor. The first conductive semiconductor layer 11a may comprise a semiconductor material having a compositional formula of InxAlyGa1-x-yN (0≤x≤1, 0 ≤y≤1, 0≤x+y≤1). For example, the first conductive semiconductor layer 11a may comprise one selected from the group consisting of InAlGaN, GaN, AlGaN, AlInN, InGaN, AlN, and InN, and may be doped with N-type dopants such as Si, Ge, Sn, Se, and Te.

    [0089] The active layer 12a emits light having a wavelength corresponding to the energy band gap difference according to materials constituting the active layer 12a through the combination of electrons (or holes) injected through the first conductive semiconductor layer 11a and holes (or electrons) injected through the second conductive semiconductor layer 13a. The active layer 12a may have one of a single quantum well (SQW) structure, a multi-quantum well (MQW) structure, a quantum dot structure, and a quantum wire structure, but the embodiment is not limited thereto.

    [0090] The active layer 12a may be implemented by using a semiconductor material having a compositional formula of InxAlyGa1-x-yN (0≤ x ≤ 1, 0 ≤ y ≤ 1, 0 ≤ x+y ≤ 1). When the active layer 12a has an MQW structure, the active layer 12a may be formed by stacking a plurality of well layers and a plurality of barrier layers. For example, the active layer 12a may have a cycle of InGaN well layer/GaN barrier layer.

    [0091] For example, the second conductive semiconductor layer 13a may be implemented by using a P type semiconductor. The second conductive semiconductor layer 13a may be implemented by using a semiconductor material having a compositional formula of InxAlyGa1-x-yN (0≤x≤1, 0≤y≤1, 0≤x+y≤1). For example, the second conductive semiconductor layer 13a may comprise one selected from the group consisting of InAlGaN, GaN, AlGaN, InGaN, AlInN, A1N, and InN, and may be doped with P-type dopants such as Mg, Zn, Ca, Sr, and Ba.

    [0092] Meanwhile, the first conductive semiconductor layer 11a may comprise a P-type semiconductor layer and the second conductive semiconductor layer 13a may comprise the N-type semiconductor layer. In addition, a semiconductor layer comprising an N-type or P-type semiconductor layer may be additionally provided on the second conductive semiconductor layer 13a. Accordingly, the light emitting structure 10a may have at least one of an NP junction structure, a PN junction structure, an NPN junction structure, or a PNP junction structure. In addition, impurities may be doped into the first conductive semiconductor layer 11a and the second conductive semiconductor layer 13a with uniform or non-uniform doping concentration. In other words, the light emitting structure 10a may have various structures, but the embodiment is not limited thereto.

    [0093] In addition, the first conductive InGaN/GaN superlattice structure or InGaN/InGaN superlattice structure may be formed between the first conductive semiconductor layer 11a and the active layer 12a. In addition, a second conductive AlGaN layer may be formed between the second conductive semiconductor layer 13a and the active layer 12a.

    [0094] Next, as shown in FIG. 3, a portion of the first conductive semiconductor layer 11a may be exposed by performing an etching scheme for the light emitting structure 10a. In this case, the etching may comprise a wet etching scheme or a dry etching scheme. In this case, the first active layer 12 and the second conductive second semiconductor layer 13 constitute the first light emitting structure later, and the second active layer 22 and the second conductive fourth semiconductor layer 23 constitute the second light emitting structure later.

    [0095] Next, as shown in FIG. 4, the channel layer 30, the first and second ohmic contact layers 15 and 25, and the first and second reflective layers 17 and 27 may be formed.

    [0096] For example, the channel layer 30 may comprise at least one selected from the group consisting of SiO2, SixOy, Si3N4, SixNy, SiOxNy, Al2O3, TiO2, and A1N.

    [0097] The first ohmic contact layer 15 may be disposed between the first reflective layer 17 and the second conductive second semiconductor layer 13. The first ohmic contact layer 15 may make contact with the second conductive second semiconductor layer 13. The first reflective layer 17 may be electrically connected to the second conductive second semiconductor layer 13. The first ohmic contact layer 15 may comprise a region making ohmic contact with the second conductive second semiconductor layer 13.

    [0098] The second ohmic contact layer 25 may be disposed between the second reflective layer 27 and the second conductive fourth semiconductor layer 23. The second ohmic contact layer 25 may make contact with the second conductive fourth semiconductor layer 23. The second reflective layer 27 may be electrically connected to the second conductive fourth semiconductor layer 23. The second ohmic contact layer 25 may comprise a region making ohmic contact with the second conductive fourth semiconductor layer 23.

    [0099] For example, the first and second ohmic contact layers 15 and 25 may comprise a transparent conductive oxide layer. For example, the first and second ohmic contact layer 15 and 25 may comprise at least one selected from the group consisting of an ITO (Indium Tin Oxide), an IZO (Indium Zinc Oxide), an AZO (Aluminum Zinc Oxide), an AGZO (Aluminum Gallium Zinc Oxide), an IZTO (Indium Zinc Tin Oxide), an IAZO (Indium Aluminum Zinc Oxide), an IGZO (Indium Gallium Zinc Oxide), an IGTO (Indium Gallium Tin Oxide), an ATO (Antimony Tin Oxide), a GZO (Gallium Zinc Oxide), an IZON (IZO Nitride), ZnO, IrOx, RuOx, NiO, Pt, Ag, and Ti.

    [0100] The first and second reflective layers 17 and 27 may comprise a material having high reflectance. For example, the first and second reflective layers 17 and 27 may comprise metal comprising at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, and Hf, and the alloy thereof. In addition, the first and second reflective layers 17 and 27 may be formed in a multi-layer of the metal or the alloy thereof and a transmissive conductive material such as an ITO (Indium-Tin-Oxide), an IZO (Indium-Zinc-Oxide), an IZTO (Indium-Zinc-Tin-Oxide), an IAZO (Indium-Aluminum-Zinc-Oxide), an IGZO (Indium-Gallium-Zinc-Oxide), an IGTO (Indium-Gallium-Tin-Oxide), an AZO (Aluminum-Zinc-Oxide), or an ATO (Antimony-Tin-Oxide). For example, according to the embodiment, the first and second reflective layers 17 and 27 may comprise at least one of Ag, Al, an Ag-Pd-Cu alloy, and an Ag-Cu alloy. For example, the first and second reflective layers 17 and 27 may have a structure in which an Ag layer and a Ni layer are alternately formed, and may comprise Ni/Ag/Ni or a Ti layer, and a Pt layer.

    [0101] As shown in FIG. 5, the first metal layer 35 is formed on the first reflective layer 17, and the second metal layer 45 is formed on the second reflective layer 27. Then, the insulating layer 40, the third metal layer 50, the bonding layers 60, and the conductive support member 70 may be formed on the first and second reflective layers 35 and 45.

    [0102] The first and second metal layers 35 and 45 may comprise at least one selected from the group consisting of Au, Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, and Mo.

    [0103] According to the embodiment, the second electrode 83 may comprise at least one of the first reflective layer 17, the first ohmic contact layer 15, and the first metal layer 35. The fourth electrode 87 may comprise at least one of the second reflective layer 27, the second ohmic contact layer 25, and the second metal layer 45.

    [0104] The insulating layer 40 may insulate the first metal layer 35 from the third metal layer 50. The insulating layer 40 may insulate the first metal layer 35 from the conductive support member 70. The insulating layer 40 may insulate the second metal layer 45 from the third metal layer 50. The insulating layer 40 may insulate the second metal layer 45 from the conductive support member 70. The insulating layer 40 may insulate the first metal layer 35 from the second metal layer 45.

    [0105] For example, the insulating layer 40 may be implemented by using an oxide or a nitride. For example, the insulating layer 40 may comprise at least one selected from the group consisting of SiO2, SixOy, Si3N4, SixNy, SiOxNy, Al2O3, TiO2, and AlN.

    [0106] The insulating layer 40 may surround a peripheral portion of the first metal layer 35. A portion of the insulating layer 40 may make contact with a lateral side of the first reflective layer 17. The insulating layer 40 may surround a peripheral portion of the channel layer 30. The insulating layer 40 may surround a peripheral portion of the second metal layer 45. A portion of the insulating layer 40 may make contact with a lateral side of the second reflective layer 27.

    [0107] The third metal layer 50 may comprise at least one of Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, and Mo. The third metal layer 50 may serve as a diffusion barrier layer.

    [0108] The third metal layer 50 may prevent a material included in the bonding layer 60 from being diffused to the first and second reflective layers 17 and 27 in the process of providing the bonding layer 60. The third metal layer 50 may prevent a material, such as tin (Sn), included in the bonding layer 60 from exerting an influence on the first and second reflective layers 17 and 27.

    [0109] The bonding layer 60 comprises barrier metal or bonding metal. For example, the bonding layer 60 may comprise at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pd and Ta. The conductive support member 70 supports the light emitting structure according to the embodiment while performing a heat radiation function. The bonding layer 60 may be implemented in the form of a seed layer.

    [0110] For example, the conductive support member 70 may comprise at least one of semiconductor substrates (e.g., Si, Ge, GaN, GaAs, ZnO, SiC, and SiGe substrates) implanted with Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu-W, or impurities.

    [0111] Next, the substrate 5 is removed from the first conductive semiconductor layer 11a. According to one example, the substrate 5 may be removed through a laser lift off (LLO) process. The LLO process is a process to delaminate the substrate 5 from the first conductive semiconductor layer 11a by irradiating a laser to the bottom surface of the substrate 5.

    [0112] In addition, as shown in FIG. 6, the lateral sides of the first and second light emitting structures 10 and 20 are etched through an isolation etching process to expose a portion of the channel layer 30. In this case, a portion of the insulating layer 40 may be exposed. The isolation etching process may be performed through a dry etching process such as inductively coupled plasma (ICP), but the embodiment is not limited thereto.

    [0113] A roughness may be formed on the top surfaces of the first and second light emitting structures 10 and 20. Accordingly, a light extraction pattern may be provided on the top surfaces of the light emitting structures 10 and 20. A concave-convex pattern may be provided on the first and second light emitting structures 10 and 20. For example, the light extraction pattern provided on the first and second light emitting structures 10 and 20 may be formed through a PEC (Photo Electro Chemical) etching process. Therefore, according to the embodiment, the external light extraction effect can be increased.

    [0114] Next, as shown in FIG. 6, the first electrode 80, the third electrode 85, and the first to third connection parts 90, 95 and 97 are formed.

    [0115] According to the embodiment, an electric power may be applied to the first light emitting structure 10 through the first and second electrodes 80 and 83. According to the embodiment, the first electrode 80 may comprise an ohmic layer, an intermediate layer, and an upper layer. The ohmic layer may comprise a material selected from the group consisting of Cr, V, W, Ti, and Zn, and may make ohmic contact. The intermediate layer may be implemented by using a material selected from the group consisting of Ni, Cu, and Al. For example, the upper layer may comprise Au. The first electrode 80 may comprise at least one selected from the group consisting of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au and Mo.

    [0116] According to the embodiment, an electric power may be applied to the second light emitting structure 20 through the third and fourth electrodes 85 and 87. According to the embodiment, the third electrode 85 may comprise an ohmic layer, an intermediate layer, and an upper layer. The ohmic layer may comprise a material selected from the group consisting of Cr, V, W, Ti, and Zn, and may make ohmic contact. The intermediate layer may be implemented by using a material selected from the group consisting of Ni, Cu and Al. For example, the upper layer may comprise Au. The third electrode 85 may comprise at least one selected from the group consisting of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au and Mo.

    [0117] The light emitting device according to the embodiment comprises the first to third connection parts 90, 95 and 97. The first connection part 90 is electrically connected to the first electrode 80 and the conductive support member 70. The second connection part 95 is electrically connected to the second and third electrodes 83 and 85. The third connection part 97 is electrically connected to the fourth electrode 87. One end of the third connection part 97 is provided on the channel layer 30. The third connection part 97 may be electrically connected to the second reflective layer 27.

    [0118] The first connection part 90 may make contact with the first electrode 80. The first connection part 90 may be electrically connected to the third metal layer 50. The first connection part 90 may make contact with the third metal layer 50. The first connection part 90 may be electrically connected to the conductive support member 70 through the third metal layer 50 and the bonding layer 60.

    [0119] The first connection part 90 may be provided through the insulating layer 40. The first connection part 90 may be electrically connected to the conductive support member 70 through the insulating layer 40. The first connection part 90 may be electrically connected to the third metal layer 50 through the channel layer 30. The first connection part 90 may be electrically connected to the third metal layer 50 through the channel layer 30 and the insulating layer 40.

    [0120] The first connection part 90 may be provided at the lateral side of the first light emitting structure 10. The first connection part 90 may be provided at the lateral side of the first conductive first semiconductor layer 11. The first connection part 90 may make contact with the lateral side of the first conductive first semiconductor layer 11. The channel layer 30 insulates the first connection part 90 from the first active layer 12. The channel layer 30 also insulates the first connection part 90 from the second conductive second semiconductor layer 13. The first connection part 90 may be spaced apart from the first active layer 12 by a distance of at least 3 µm.

    [0121] The second connection part 95 may be provided at a lateral side of the second light emitting structure 20. The second connection part 95 may be provided at a lateral side of the first conductive third semiconductor layer 21. The second connection part 95 may make contact with the lateral side of the first conductive third semiconductor layer 21. The channel layer 30 may insulate the second connection part 95 from the second active layer 22. The channel layer 30 may insulate the second connection part 95 from the second conductive fourth semiconductor layer 23. The second connection part 95 may be spaced apart from the second active layer 22 by at least 3 µm.

    [0122] The third connection part 97 may be electrically connected to the second metal layer 45. The third connection part 97 may make contact with the second metal layer 45. One end of the third connection part 97 is provided on the channel layer 30. One end of the third connection part 97 may be spaced apart from a lateral side of the second light emitting structure 20. One end of the third connection part 97 may be exposed to the lateral side of the second light emitting structure 20.

    [0123] The third connection part 97 may be electrically connected to the second metal layer 45 through the channel layer 30. In addition, the third connection part 97 may be electrically connected to the second metal layer 45 through the insulation layer 40. The third connection part 97 is electrically connected to the fourth electrode 87. The third connection part 97 may make contact with the fourth electrode 87.

    [0124] The first to third connection parts 90, 95 and 97 may comprise at least one of Cr, V, W, Ti, Zn, Ni, Pt, Cu, Al, Au and Mo.

    [0125] According to the light emitting device of the embodiment, the first electrode 80 is electrically connected to the first conductive first semiconductor layer 11 provided on the second electrode 83 through the conductive support member 70 provided under the second electrode 83. The second electrode 83 may be disposed between the second conductive second semiconductor layer 13 and the conductive support member 70.

    [0126] Thus, an electric power may be provided to the first conductive first semiconductor layer 11 through a scheme of attaching the conductive support member 70 to a bonding pad. In addition, according to the embodiment, the second connection part 95 is electrically connected to the second and third electrodes 83 and 85. The third connection part 97 is electrically connected to the fourth electrode 87. Thus, by connecting the third connection part 97 to a power pad through a wire bonding scheme, an electric power may be supplied to the second conductive second semiconductor layer 13.

    [0127] According to the light emitting device of the embodiment, an electric power is supplied to the first and second light emitting structures 10 and 20 through the conductive support member 70 and the third connection part 97. Therefore, according to the embodiment, current concentration can be prevented, and the electrical reliability can be improved.

    [0128] Meanwhile, the process of forming each layer described above is provided for the illustrative purpose, and the process sequence thereof may be variously modified.

    [0129] FIG. 7 is a sectional view showing still another example of a light emitting device according to another embodiment of the present invention. In the following description about the light emitting device shown in FIG. 7, components and structures the same as those described with reference to FIG. 1 will not be further described in order to avoid redundancy.

    [0130] According to the embodiment shown in FIG. 7, the channel layer 30 is provided at the peripheral portions of the lower portions of the first and second light emitting structures 10 and 20, and the insulating layer 40 may not be exposed to the peripheral portions of the lower portions of the first and second light emitting structures 10 and 20.

    [0131] The light emitting device according to the embodiment comprises the channel layer 30 provided at the peripheral portions of the lower portions of the first and second light emitting structures 10 and 20. For example, the top surface of the channel layer 30 may be provided higher than the top surface of the first active layer 12 and than the top surface of the second active layer 22.

    [0132] The channel layer 30 surrounds the first active layer 12. The channel layer 30 also surrounds a peripheral portion of the second conductive second semiconductor layer 13. One end of the channel layer 30 may be provided under the second conductive second semiconductor layer 13. The one end of the channel layer 30 may make contact with a bottom surface of the second conductive second semiconductor layer 13. The one end of the channel layer 30 may be disposed between the second conductive second semiconductor layer 13 and the second electrode 83. The one end of the channel layer 30 may be disposed between the second conductive second semiconductor layer 13 and a first reflective layer 17.

    [0133] The channel layer 30 surrounds the second active layer 22. The channel layer 30 also surrounds a peripheral portion of the second conductive fourth semiconductor layer 23. One end of the channel layer 30 may be provided under the second conductive fourth semiconductor layer 23. The one end of the channel layer 30 may make contact with a bottom surface of the second conductive fourth semiconductor layer 23. The one end of the channel layer 30 may be disposed between the second conductive fourth semiconductor layer 23 and the fourth electrode 87. The one end of the channel layer 30 may be disposed between the second conductive fourth semiconductor layer 23 and a second reflective layer 27.

    [0134] For example, the channel layer 30 may be implemented by using an oxide or a nitride. For example, the channel layer 30 may comprise at least one selected from the group consisting of SiO2, SixOy, Si3N4, SixNy, SiOxNy, Al2O3, TiO2, and AlN. The channel layer 30 may be referred to as an isolation layer. The channel layer 30 serves as an etching stopper when an isolation process is performed with respect to the first and second light emitting structures 10 and 20 thereafter. In addition, through the isolation process, the electrical characteristic of the light emitting device can be prevented from being degraded.

    [0135] According to the embodiment, power may be applied to the first light emitting structure 10 through the first and second electrodes 80 and 83. According to the embodiment, the first electrode 80 may comprise an ohmic layer, an intermediate layer and an upper layer. The ohmic layer may comprise a material selected from the group consisting of Cr, V, W, Ti, and Zn, and may make ohmic contact. The intermediate layer may be implemented by using a material selected from the group consisting of Ni, Cu, and Al. For example, the upper layer may comprise Au. The first electrode 80 may comprise at least one selected from the group consisting of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au, and Mo.

    [0136] According to the embodiment, power may be applied to the second light emitting structure 20 through the third and fourth electrodes 85 and 87. According to the embodiment, the third electrode 85 may comprise an ohmic layer, an intermediate layer and an upper layer. The ohmic layer may comprise a material selected from the group consisting of Cr, V, W, Ti, and Zn, and may make ohmic contact. The intermediate layer may be implemented by using a material selected from the group consisting of Ni, Cu and Al. For example, the upper layer may comprise Au. The third electrode 85 may comprise at least one selected from the group consisting of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au, and Mo.

    [0137] The light emitting device according to the embodiment comprises the first to third connection parts 90, 95 and 97. The first connection part 90 is electrically connected to the first electrode 80 and the conductive support member 70. The second connection part 95 is electrically connected to the second and third electrodes 83 and 85. The third connection part 97 is electrically connected to the fourth electrode 87. One end of the third connection part 97 is provided over the channel layer 30. The third connection part 97 may be electrically connected to the second reflective layer 27.

    [0138] The first connection part 90 may make contact with the first electrode 80. The first connection part 90 may be electrically connected to the third metal layer 50. The first connection part 90 may make contact with the third metal layer 50. The first connection part 90 may be electrically connected to the conductive support member 70 through the third metal layer 50 and the bonding layer 60. The first connection part 90 may make direct contact with the bonding layer 60 or the conductive support member 70.

    [0139] The first connection part 90 may be provided through the insulating layer 40. The first connection part 90 may be electrically connected to the conductive support member 70 through the insulating layer 40. In addition, the first connection part 90 may be electrically connected to the third metal layer 50 through the channel layer 30. The first connection part 90 may be electrically connected to the third metal layer 50 through the channel layer 30 and the insulating layer 40.

    [0140] The first connection part 90 may be provided at a lateral side of the first light emitting structure 10. The first connection part 90 may be provided at a lateral side of the first conductive first semiconductor layer 11. The first connection part 90 may make contact with the lateral side of the first conductive first semiconductor layer 11. The channel layer 30 insulates the first connection part 90 from the first active layer 12. The channel layer 30 insulates the first connection part 90 from the second conductive second semiconductor layer 13. The first connection part 90 may be spaced apart from the first active layer 12 by at least 3 µm.

    [0141] The second connection part 95 may be provided at a lateral side of the second light emitting structure 20. The second connection part 95 may be provided at a lateral side of the first conductive third semiconductor layer 21. The second connection part 95 may make contact with the lateral side of the first conductive third semiconductor layer 21. The channel layer 30 may insulate the second connection part 95 from the second active layer 22. The channel layer 30 may insulate the second connection part 95 from the second conductive fourth semiconductor layer 23. The second connection part 95 may be spaced apart from the second active layer 22 by at least 3 µm.

    [0142] The third connection part 97 may be electrically connected to the second metal layer 45. The third connection part 97 may make contact with the second metal layer 45. One end of the third connection part 97 is provided on the channel layer 30. One end of the third connection part 97 may be spaced apart from a lateral side of the second light emitting structure 20. One end of the third connection part 97 may be exposed to the lateral side of the second light emitting structure 20.

    [0143] The third connection part 97 may be electrically connected to the second metal layer 45 through the channel layer 30. In addition, the third connection part 97 may be electrically connected to the second metal layer 45 through the insulation layer 40. The third connection part 97 is electrically connected to the fourth electrode 87. The third connection part 97 may make contact with the fourth electrode 87.

    [0144] The first to third connection parts 90, 95 and 97 may comprise at least one of Cr, V, W, Ti, Zn, Ni, Pt, Cu, Al, Au and Mo.

    [0145] According to the light emitting device of the embodiment, the first electrode 80 is electrically connected to the first conductive first semiconductor layer 11 provided on the second electrode 83 through the conductive support member 70 provided under the second electrode 83. The second electrode 83 may be disposed between the second conductive second semiconductor layer 13 and the conductive support member 70.

    [0146] Thus, an electric power may be provided to the first conductive first semiconductor layer 11 through a scheme of attaching the conductive support member 70 to a bonding pad. In addition, according to the embodiment, the second connection part 95 is electrically connected to the second and third electrodes 83 and 85. The third connection part 97 is electrically connected to the fourth electrode 87. Thus, by connecting the third connection part 97 to a power pad through a wire bonding scheme, an electric power may be supplied to the second conductive second semiconductor layer 13.

    [0147] According to the light emitting device of the embodiment, an electric power is supplied to the first and second light emitting structures 10 and 20 through the conductive support member 70 and the third connection part 97. Therefore, according to the embodiment, current concentration can be prevented, and the electrical reliability can be improved.

    [0148] FIG. 8 is a sectional view showing another example of a light emitting device according to a further embodiment of the present invention. In the following description about the light emitting device shown in FIG. 8, components and structures the same as those described with reference to FIG. 1 will not be further described in order to avoid redundancy.

    [0149] According to the light emitting device of the embodiment, a first ohmic reflective layer 19 may be provided under the first light emitting structure 10. The first ohmic reflective layer 19 may be implemented such that the first ohmic reflective layer 19 serves as both of the first reflective layer 17 and the first ohmic contact layer 15. Accordingly, the first ohmic reflective layer 19 may make ohmic contact with the second conductive second semiconductor layer 13, and reflect the light thereon from the first light emitting structure 10.

    [0150] According to the light emitting device of the embodiment, a second ohmic reflective layer 29 may be provided under the second light emitting structure 20. The second ohmic reflective layer 29 may be implemented such that the second ohmic reflective layer 29 serves as both of the second reflective layer 27 and the second ohmic contact layer 25. Accordingly, the second ohmic reflective layer 29 may make ohmic contact with the second conductive fourth semiconductor layer 23, and reflect the light thereon from the second light emitting structure 20.

    [0151] In this case, the first and second ohmic reflective layers 19 and 29 may comprise multiple layers. For example, the first and second ohmic reflective layers 19 and 29 may have a structure in which an Ag layer and a Ni layer are alternately formed, or may comprise a Ni/Ag/Ni layer, a Ti layer, or a Pt layer.

    [0152] The light emitting device according to the embodiment comprises a channel layer 30 provided at the peripheral portions of lower portions of the first and second light emitting structures 10 and 20. For example, the top surface of the channel layer 30 may be provided higher than the top surface of the first active layer 12 and than the top surface of the second active layer 22.

    [0153] According to the embodiment, power may be applied to the first light emitting structure 10 through the first and second electrodes 80 and 83. According to the embodiment, the first electrode 80 may comprise an ohmic layer, an intermediate layer and an upper layer. The ohmic layer may comprise a material selected from the group consisting of Cr, V, W, Ti, and Zn, and may make ohmic contact. The intermediate layer may be implemented by using a material selected from the group consisting of Ni, Cu, and Al. For example, the upper layer may comprise Au. The first electrode 80 may comprise at least one selected from the group consisting of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au, and Mo.

    [0154] According to the embodiment, an electric power may be applied to the second light emitting structure 20 through the third and fourth electrodes 85 and 87. According to the embodiment, the third electrode 85 may comprise an ohmic layer, an intermediate layer, and an upper layer. The ohmic layer may comprise a material selected from the group consisting of Cr, V, W, Ti, and Zn, and may make ohmic contact. The intermediate layer may be implemented by using a material selected from the group consisting of Ni, Cu, and Al. For example, the upper layer may comprise Au. The third electrode 85 may comprise at least one selected from the group consisting of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au and Mo.

    [0155] The light emitting device according to the embodiment comprises the first to third connection parts 90, 95 and 97. The first connection part 90 is electrically connected to the first electrode 80 and the conductive support member 70. The second connection part 95 is electrically connected to the second and third electrodes 83 and 85. The third connection part 97 may be electrically connected to the fourth electrode 87. One end of the third connection part 97 is provided over the channel layer 30. The third connection part 97 may be electrically connected to the second reflective layer 29.

    [0156] The first connection part 90 may make contact with the first electrode 80. The first connection part 90 may be electrically connected to the third metal layer 50. The first connection part 90 may make contact with the third metal layer 50. The first connection part 90 may be electrically connected to the conductive support member 70 through the third metal layer 50 and the bonding layer 60. The first connection part 90 may make direct contact with the bonding layer 60 or the conductive support member 70.

    [0157] The first connection part 90 may be provided through the insulating layer 40. The first connection part 90 may be electrically connected to the conductive support member 70 through the insulating layer 40. In addition, the first connection part 90 may be electrically connected to the third metal layer 50 through the channel layer 30. The first connection part 90 may be electrically connected to the third metal layer 50 through the channel layer 30 and the insulating layer 40.

    [0158] The first connection part 90 may be provided at a lateral side of the first light emitting structure 10. The first connection part 90 may be provided at a lateral side of the first conductive first semiconductor layer 11. The first connection part 90 may make contact with the lateral side of the first conductive first semiconductor layer 11. The channel layer 30 insulates the first connection part 90 from the first active layer 12. The channel layer 30 insulates the first connection part 90 from the second conductive second semiconductor layer 13. The first connection part 90 may be spaced apart from the first active layer 12 by at least 3 µm.

    [0159] The second connection part 95 may be provided at a lateral side of the second light emitting structure 20. The second connection part 95 may be provided at a lateral side of the first conductive third semiconductor layer 21. The second connection part 95 may make contact with the lateral side of the first conductive third semiconductor layer 21. The channel layer 30 may insulate the second connection part 95 from the second active layer 22. The channel layer 30 may insulate the second connection part 95 from the second conductive fourth semiconductor layer 23. The second connection part 95 may be spaced apart from the second active layer 22 by at least 3 µm.

    [0160] The third connection part 97 may be electrically connected to the second metal layer 45. The third connection part 97 may make contact with the second metal layer 45. One end of the third connection part 97 is provided on the channel layer 30. One end of the third connection part 97 may be spaced apart from a lateral side of the second light emitting structure 20. One end of the third connection part 97 may be exposed to the lateral side of the second light emitting structure 20.

    [0161] The third connection part 97 may be electrically connected to the second metal layer 45 through the channel layer 30. In addition, the third connection part 97 may be electrically connected to the second metal layer 45 through the insulation layer 40. The third connection part 97 is electrically connected to the fourth electrode 87. The third connection part 97 may make contact with the fourth electrode 87.

    [0162] The first to third connection parts 90, 95 and 97 may comprise at least one of Cr, V, W, Ti, Zn, Ni, Pt, Cu, Al, Au and Mo.

    [0163] According to the light emitting device of the embodiment, the first electrode 80 is electrically connected to the first conductive first semiconductor layer 11 provided on the second electrode 83 through the conductive support member 70 provided under the second electrode 83. The second electrode 83 may be disposed between the second conductive second semiconductor layer 13 and the conductive support member 70.

    [0164] Thus, an electric power may be provided to the first conductive first semiconductor layer 11 through a scheme of attaching the conductive support member 70 to a bonding pad. In addition, according to the embodiment, the second connection part 95 is electrically connected to the second and third electrodes 83 and 85. The third connection part 97 is electrically connected to the fourth electrode 87. Thus, by connecting the third connection part 97 to a power pad through a wire bonding scheme, an electric power may be supplied to the second conductive second semiconductor layer 13.

    [0165] According to the light emitting device of the embodiment, an electric power is supplied to the first and second light emitting structures 10 and 20 through the conductive support member 70 and the third connection part 97. Therefore, according to the embodiment, current concentration can be prevented, and the electrical reliability can be improved.

    [0166] FIG. 9 is a sectional view showing still another example of a light emitting device according to a still further embodiment of the present invention. In the following description about the light emitting device shown in FIG. 9, components and structures the same as those described with reference to FIG. 1 will not be further described in order to avoid redundancy.

    [0167] According to the light emitting device of the embodiment, a first ohmic reflective layer 19 may be provided under the first light emitting structure 10. The first ohmic reflective layer 19 may be implemented such that the first ohmic reflective layer 19 serves as both of the first reflective layer 17 and the first ohmic contact layer 15. Accordingly, the first ohmic reflective layer 19 may make ohmic contact with the second conductive second semiconductor layer 13, and reflect the light thereon from the first light emitting structure 10.

    [0168] According to the light emitting device of the embodiment, a second ohmic reflective layer 29 may be provided under the second light emitting structure 20. The second ohmic reflective layer 29 may be implemented such that the second ohmic reflective layer 29 serves as both of the second reflective layer 27 and the second ohmic contact layer 25. Accordingly, the second ohmic reflective layer 29 may make ohmic contact with the second conductive fourth semiconductor layer 23, and reflect the light thereon from the second light emitting structure 20.

    [0169] In this case, the first and second ohmic reflective layers 19 and 29 may comprise multiple layers. For example, the first and second ohmic reflective layers 19 and 29 may have a structure in which an Ag layer and an Ni layer are alternately formed, or may comprise a Ni/Ag/Ni layer, a Ti layer, or a Pt layer.

    [0170] The light emitting device according to the embodiment comprises a channel layer 30 provided at the peripheral portions of lower portions of the first and second light emitting structures 10 and 20. For example, the top surface of the channel layer 30 may be provided higher than the top surface of the first active layer 12 and than the top surface of the second active layer 22.

    [0171] According to the embodiment, power may be applied to the first light emitting structure 10 through the first and second electrodes 80 and 83. According to the embodiment, the first electrode 80 may comprise an ohmic layer, an intermediate layer and an upper layer. The ohmic layer may comprise a material selected from the group consisting of Cr, V, W, Ti, and Zn, and may make ohmic contact. The intermediate layer may be implemented by using a material selected from the group consisting of Ni, Cu, and Al. For example, the upper layer may comprise Au. The first electrode 80 may comprise at least one selected from the group consisting of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au, and Mo.

    [0172] According to the embodiment, an electric power may be applied to the second light emitting structure 20 through the third and fourth electrodes 85 and 87. According to the embodiment, the third electrode 85 may comprise an ohmic layer, an intermediate layer, and an upper layer. The ohmic layer may comprise a material selected from the group consisting of Cr, V, W, Ti, and Zn, and may make ohmic contact. The intermediate layer may be implemented by using a material selected from the group consisting of Ni, Cu, and Al. For example, the upper layer may comprise Au. The third electrode 85 may comprise at least one selected from the group consisting of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au and Mo.

    [0173] The light emitting device according to the embodiment comprises the first to third connection parts 90, 95 and 97. The first connection part 90 is electrically connected to the first electrode 80 and the conductive support member 70. The second connection part 95 is electrically connected to the second and third electrodes 83 and 85. The third connection part 97 is electrically connected to the fourth electrode 87. One end of the third connection part 97 is provided over the channel layer 30. The third connection part 97 may be electrically connected to the second reflective layer 29.

    [0174] The first connection part 90 may make contact with the first electrode 80. The first connection part 90 may be electrically connected to the third metal layer 50. The first connection part 90 may make contact with the third metal layer 50. The first connection part 90 may be electrically connected to the conductive support member 70 through the third metal layer 50 and the bonding layer 60. The first connection part 90 may make direct contact with the bonding layer 60 or the conductive support member 70.

    [0175] The first connection part 90 may be provided through the insulating layer 40. The first connection part 90 may be electrically connected to the conductive support member 70 through the insulating layer 40. In addition, the first connection part 90 may be electrically connected to the third metal layer 50 through the channel layer 30. The first connection part 90 may be electrically connected to the third metal layer 50 through the channel layer 30 and the insulating layer 40.

    [0176] The first connection part 90 may be provided at a lateral side of the first light emitting structure 10. The first connection part 90 may be provided at a lateral side of the first conductive first semiconductor layer 11. The first connection part 90 may make contact with the lateral side of the first conductive first semiconductor layer 11. The channel layer 30 insulates the first connection part 90 from the first active layer 12. The channel layer 30 insulates the first connection part 90 from the second conductive second semiconductor layer 13. The first connection part 90 may be spaced apart from the first active layer 12 by at least 3 µm.

    [0177] The second connection part 95 may be provided at a lateral side of the second light emitting structure 20. The second connection part 95 may be provided at a lateral side of the first conductive third semiconductor layer 21. The second connection part 95 may make contact with the lateral side of the first conductive third semiconductor layer 21. The channel layer 30 may insulate the second connection part 95 from the second active layer 22. The channel layer 30 may insulate the second connection part 95 from the second conductive fourth semiconductor layer 23. The second connection part 95 may be spaced apart from the second active layer 22 by at least 3 µm.

    [0178] The third connection part 97 may be electrically connected to the second metal layer 45. The third connection part 97 may make contact with the second metal layer 45. One end of the third connection part 97 is provided on the channel layer 30. One end of the third connection part 97 may be spaced apart from a lateral side of the second light emitting structure 20. One end of the third connection part 97 may be exposed to the lateral side of the second light emitting structure 20.

    [0179] The third connection part 97 may be electrically connected to the second metal layer 45 through the channel layer 30. In addition, the third connection part 97 may be electrically connected to the second metal layer 45 through the insulation layer 40. The third connection part 97 is electrically connected to the fourth electrode 87. The third connection part 97 may make contact with the fourth electrode 87.

    [0180] The first to third connection parts 90, 95 and 97 may comprise at least one of Cr, V, W, Ti, Zn, Ni, Pt, Cu, Al, Au and Mo.

    [0181] According to the light emitting device of the embodiment, the first electrode 80 is electrically connected to the first conductive first semiconductor layer 11 provided on the second electrode 83 through the conductive support member 70 provided under the second electrode 83. The second electrode 83 may be disposed between the second conductive second semiconductor layer 13 and the conductive support member 70.

    [0182] Thus, an electric power may be provided to the first conductive first semiconductor layer 11 through a scheme of attaching the conductive support member 70 to a bonding pad. In addition, according to the embodiment, the second connection part 95 is electrically connected to the second and third electrodes 83 and 85. The third connection part 97 is electrically connected to the fourth electrode 87. Thus, by connecting the third connection part 97 to a power pad through a wire bonding scheme, an electric power may be supplied to the second conductive second semiconductor layer 13.

    [0183] According to the light emitting device of the embodiment, an electric power is supplied to the first and second light emitting structures 10 and 20 through the conductive support member 70 and the third connection part 97. Therefore, according to the embodiment, current concentration can be prevented, and the electrical reliability can be improved.

    [0184] FIG. 10 is a sectional view showing a light emitting device package to which the light emitting device according to the present invention is applied.

    [0185] Referring to FIG. 10, the light emitting device package according to the present disclosure comprises a body 120, first and second lead electrodes 131 and 132 formed on the body 120, a light emitting device 100 in accordance with the present invention, provided on the body 120 and electrically connected to the first and second lead electrodes 131 and 132 and a molding member 140 that surrounds the light emitting device 100.

    [0186] The body 120 may comprise silicon, synthetic resin or metallic material, and an inclined surface may be formed in the vicinity of the light emitting device 100.

    [0187] The first and second lead electrodes 131 and 132 are electrically isolated from each other to supply power to the light emitting device 100. The first and second lead electrode 131 and 132 can improve the light efficiency by reflecting the light emitted from the light emitting device 100. Further, the first and second lead electrodes 131 and 132 dissipate heat generated from the light emitting device 100 to the outside.

    [0188] The light emitting device 100 can be installed on the body 120 or the first or second lead electrode 131 or 132.

    [0189] The light emitting device 100 may be electrically connected to the first and second lead electrodes 131 and 132 through one of a wire scheme, a flip-chip scheme, and a die-bonding scheme.

    [0190] The molding member 140 may surround the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 140 may comprise phosphors to change the wavelength of the light emitted from the light emitting device 100.

    [0191] A plurality of light emitting devices according to the present invention, or of light emitting device packages according to the above disclosure may be arrayed on a board, and an optical member comprising a lens, a light guide plate, a prism sheet, or a diffusion sheet may be provided on the optical path of the light emitted from the light emitting device package. The light emitting device package, the board, and the optical member may serve as a light unit. The light unit is realized in a top view type or a side view type and variously provided in display devices of a portable terminal and a laptop computer or a lighting apparatus and an indicator apparatus. In addition, a lighting apparatus according to the present disclosure can comprise a light emitting device in accordance with the present invention, or a light emitting device package according to the above disclosure. For example, the lighting apparatus may comprise a lamp, a signal lamp, an electric sign board and a headlight of a vehicle.

    [0192] The light emitting device according to the present invention may be applied to the light unit. The light unit has a structure in which a plurality of light emitting devices are arrayed. The light unit may comprise a display device as shown in FIGS. 11 and 12 and the lighting apparatus as shown in FIG. 13.

    [0193] Referring to FIG. 11, a display device 1000 according to the present disclosure comprises a light guide plate 1041, a light emitting module 1031 for supplying the light to the light guide plate 1041, a reflective member 1022 provided below the light guide plate 1041, an optical sheet 1051 provided above the light guide plate 1041, a display panel 1061 provided above the optical sheet 1051, and a bottom cover 1011 for receiving the light guide plate 1041, the light emitting module 1031, and the reflective member 1022. However, the present disclosure is not limited to the above structure.

    [0194] The bottom cover 1011, the reflective member 1022, the light guide plate 1041 and the optical sheet 1051 may constitute a light unit 1050.

    [0195] The light guide plate 1041 diffuses the light to provide surface light. The light guide plate 1041 may comprise transparent material. For example, the light guide plate 1041 may comprise one of acryl-based resin such as PMMA (polymethyl methacrylate), PET (polyethylene terephthalate), PC (polycarbonate), COC (cyclic olefin copolymer) and PEN (polyethylene naphthalate) resin.

    [0196] The light emitting module 1031 supplies the light to at least one side of the light guide plate 1041. The light emitting module 1031 serves as the light source of the display device.

    [0197] At least one light emitting module 1031 is provided to directly or indirectly supply the light from one side of the light guide plate 1041. The light emitting module 1031 may comprise a board 1033 and light emitting devices 100 in accordance with the present invention, or the light emitting device package 200 according to the above disclosure. The light emitting packages 200 may be arrayed on the board 1033 while being spaced apart from each other at a predetermined interval.

    [0198] The board 1033 may be a printed circuit board (PCB) comprising a circuit pattern. In addition, the board 1033 may also comprise a metal core PCB (MCPCB) or a flexible PCB (FPCB) as well as the PCB, but the present disclosure is not limited thereto. If the light emitting device packages 200 are installed on the lateral side of the bottom cover 1011 or on a heat dissipation plate, the board 1033 may be omitted. The heat dissipation plate may partially make contact with the top surface of the bottom cover 1011.

    [0199] In addition, the light emitting device packages 200 are installed such that light exit surfaces of the light emitting device packages 200 are spaced apart from the light guide plate 1041 at a predetermined distance, but the present disclosure is not limited thereto. The light emitting device packages 200 may directly or indirectly supply the light to a light incident part, which is one side of the light guide plate 1041, but the present disclosure is not limited thereto.

    [0200] The reflective member 1022 may be disposed below the light guide plate 1041. The reflective member 1022 reflects the light, which travels downward through the bottom surface of the light guide plate 1041, upward, thereby improving the brightness of the light unit 1050. For example, the reflective member 1022 may comprise PET, PC or PVC resin, but the present disclosure is not limited thereto. The reflective member 1022 may serve as the top surface of the bottom cover 1011, but the present disclosure is not limited thereto.

    [0201] The bottom cover 1011 may receive the light guide plate 1041, the light emitting module 1031, and the reflective member 1022 therein. To this end, the bottom cover 1011 has a receiving section 1012 having a box shape with an opened top surface, but the present disclosure is not limited thereto. The bottom cover 1011 can be coupled with the top cover (not shown), but the present disclosure is not limited thereto.

    [0202] The bottom cover 1011 can be manufactured through a press process or an extrusion process by using metallic material or resin material. In addition, the bottom cover 1011 may comprise metal or non-metallic material having superior thermal conductivity, but the present disclosure is not limited thereto.

    [0203] The display panel 1061, for example, is an LCD panel comprising first and second transparent substrates, which are opposite to each other, and a liquid crystal layer disposed between the first and second substrates. A polarizing plate can be attached to at least one surface of the display panel 1061, but the present disclosure is not limited thereto. The display panel 1061 displays information by using light passing through the optical sheet 1051. The display device 1000 can be applied to various portable terminals, monitors of notebook computers and laptop computers, and televisions.

    [0204] The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and comprises at least one transmissive sheet. For example, the optical sheet 1051 comprises at least one of a diffusion sheet, horizontal and vertical prism sheets, and a brightness enhanced sheet. The diffusion sheet diffuses the incident light, the horizontal and/or vertical prism sheet concentrates the incident light onto a display region, and the brightness enhanced sheet improves the brightness by reusing the light to be lost. In addition, a protective sheet can be provided on the display panel 1061, but the present disclosure is not limited thereto.

    [0205] The light guide plate 1041 and the optical sheet 1051 can be provided on the optical path of the light emitting module 1031 as optical members, but the present disclosure is not limited thereto.

    [0206] FIG. 12 is a sectional view showing another example of a display device according to the present disclosure.

    [0207] Referring to FIG. 12, the display device 1100 comprises a bottom cover 1152, a board 1020 on which the light emitting device packages 200 are arrayed, an optical member 1154, and a display panel 1155.

    [0208] The board 1020 and the light emitting device packages 200 may constitute a light emitting module 1060. In addition, the bottom cover 1152, at least one light emitting module 1060, and the optical member 1154 may constitute the light unit.

    [0209] The bottom cover 1152 can be provided therein with a receiving section 1153, but the present disclosure is not limited thereto.

    [0210] In this case, the optical member 1154 may comprise at least one of a lens, a light guide plate, a diffusion sheet, horizontal and vertical prism sheets, and a brightness enhanced sheet. The light guide plate may comprise PC or PMMA (Poly methyl methacrylate). The light guide plate can be omitted. The diffusion sheet diffuses the incident light, the horizontal and vertical prism sheets concentrate the incident light onto a display region, and the brightness enhanced sheet improves the brightness by reusing the light to be lost.

    [0211] The optical member 1154 is disposed above the light emitting module 1060 in order to convert the light emitted from the light emitting module 1060 into the surface light. In addition, the optical member 1154 may diffuse or collect the light.

    [0212] FIG. 13 is a perspective view showing a lighting apparatus according to the present disclosure.

    [0213] Referring to FIG. 13, the lighting apparatus according to the present disclosure may comprise a cover 2100, a light source module 2200, a radiator 2400, a power supply part 2600, an inner case 2700, and a socket 2800. The lighting apparatus according to the present disclosure may further comprise at least one of a member 2300 and a holder 2500. The light source module 2200 may comprise the light emitting device package according to the above disclosure.

    [0214] For example, the cover 2100 may have a bulb shape or a hemispheric shape. The cover 2100 may have a hollow structure which is partially open. The cover 2100 may be optically coupled with the light source module 2200. For example, the cover 2100 may diffuse, scatter, or excite light provided from the light source module 2200. The cover 2100 may be an optical member. The cover 2100 may be coupled with the radiator 2400. The cover 2100 may comprise a coupling part which is coupled with the radiator 2400.

    [0215] The cover 2100 may comprise an inner surface coated with a milk-white pigment. The milk-white pigment may comprise a diffusion material to diffuse light. The roughness of the inner surface of the cover 2100 may be greater than the roughness of the outer surface of the cover 2100. The surface roughness is provided for the purpose of sufficiently scattering and diffusing the light from the light source module 2200.

    [0216] The cover 2100 may comprise glass, plastic, polypropylene (PP), polyethylene (PE) or polycarbonate (PC). The polycarbonate (PC) has the superior light resistance, heat resistance and strength among the above materials. The cover 2100 may be transparent so that a user may view the light source module 2200 from the outside, or may be opaque. The cover 2100 may be formed through a blow molding scheme.

    [0217] The light source module 2200 may be disposed at one surface of the radiator 2400. Accordingly, the heat from the light source module 2200 is transferred to the radiator 2400. The light source module 2200 may comprise a light source 2210, a connection plate 2230, and a connector 2250.

    [0218] The member 2300 is disposed on a top surface of the radiator 2400, and comprises guide recesses 2310 into which a plurality of light sources 2210 and the connector 2250 are inserted. The guide recesses 2310 correspond to a board of the light source 2210 and the connector 2250.

    [0219] A surface of the member 2300 may be coated with a light reflective material. For example, the surface of the member 2300 may be coated with white pigment. The member 2300 reflects again light, which is reflected by the inner surface of the cover 2100 and is returned to the direction of the light source module 2200, to the direction of the cover 2100. Accordingly, the light efficiency of the lighting apparatus according to the present disclosure may be improved.

    [0220] For example, the member 2300 may comprise an insulating material. The connection plate 2230 of the light source module 2200 may comprise an electrically conductive material. Accordingly, the radiator 2400 may be electrically connected to the connection plate 2230. The member 2300 may be formed by an insulating material, thereby preventing the connection plate 2230 from being electrically shorted with the radiator 2400. The radiator 2400 receives heat from the light source module 2200 and the power supply part 2600 and dissipates the heat.

    [0221] The holder 2500 covers a receiving recess 2719 of an insulating part 2710 of an inner case 2700. Accordingly, the power supply part 2600 received in the insulating part 2710 of the inner case 2700 is sealed. The holder 2500 comprises a guide protrusion 2510. The guide protrusion 2510 has a hole and a protrusion of the power supply part 2600 extends by passing through the hole.

    [0222] The power supply part 2600 processes or converts an electric signal received from the outside and provides the processed or converted electric signal to the light source module 2200. The power supply part 2600 is received in the receiving recess 2719 of the inner case 2700, and is sealed inside the inner case 2700 by the holder 2500.

    [0223] The power supply part 2600 may comprise a protrusion 2610, a guide part 2630, a base 2650, and an extension part 2670.

    [0224] The guide part 2630 has a shape protruding from one side of the base 2650 to the outside. The guide part 2630 may be inserted into the holder 2500. A plurality of components may be disposed on one surface of the base 2650. For example, the components may comprise a DC converter to convert AC power provided from an external power supply into DC power, a driving chip to control the driving of the light source module 2200, and an electrostatic discharge (ESD) protection device to protect the light source module 2200, but the present disclosure is not limited thereto.

    [0225] The extension part 2670 has a shape protruding from an opposite side of the base 2650 to the outside. The extension part 2670 is inserted into an inside of the connection part 2750 of the inner case 2700, and receives an electric signal from the outside. For example, a width of the extension part 2670 may be smaller than or equal to a width of the connection part 2750 of the inner case 2700. First terminals of a "+ electric wire" and a "- electric wire" are electrically connected to the extension part 2670 and second terminals of the "+ electric wire" and the "- electric wire" may be electrically connected to a socket 2800.

    [0226] The inner case 2700 may comprise a molding part therein together with the power supply part 2600. The molding part is prepared by hardening molding liquid, and the power supply part 2600 may be fixed inside the inner case 2700 by the molding part.

    [0227] Any reference in this specification to "one embodiment," "an embodiment," "example embodiment," etc., means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the present invention, whose scope is defined by the appended claims.

    [0228] Although embodiments have been described with reference to a number of illustrative embodiments thereof, it should be understood that numerous other modifications and embodiments can be devised by those skilled in the art that will fall within the scope of the present invention as defined by the appended claims.


    Claims

    1. A light emitting device comprising:

    a conductive support member (70);

    a first light emitting structure (10) on the conductive support member (70), the first light emitting structure (10) comprising a first conductivity type first semiconductor layer (11), a first active layer (12) under the first conductivity type first semiconductor layer (11), and a second conductivity type second semiconductor layer (13) under the first active layer (12);

    a second light emitting structure (20) on the conductive support member (70), the second light emitting structure (20) comprising a first conductivity type third semiconductor layer (21), a second active layer (22) under the first conductivity type third semiconductor layer (21), and a second conductivity type fourth semiconductor layer (23) under the second active layer (22);

    a channel layer (30) around lower portions of the first and second light emitting structures (10; 20), the channel layer (30) being an etching stopper when an isolation processing is performed with respect to the first and second light emitting structures (10; 20);

    a first electrode (80) electrically connected to the first conductivity type first semiconductor layer (11);

    a second electrode (83) electrically connected to the second conductivity type second semiconductor layer (13);

    a third electrode (85) electrically connected to the first conductivity type third semiconductor layer (21);

    a fourth electrode (87) electrically connected to the second conductivity type fourth semiconductor layer (23);

    a first connection part (90) electrically connected to the first electrode (80);

    a second connection part (95) electrically connected to the second and third electrodes (83; 85); and

    a third connection part (97) electrically connected to the fourth electrode (87) and having one end provided on the channel layer (30),

    characterized in that

    the first connection part (90) is electrically connected to the conductive support member (70) such that an electric power is supplied to the first and second light emitting structures (10; 20) through the conductive support member (70) and the third connection part (97), and

    the channel layer (30) surrounds the first active layer (12), the second active layer (22), the second conductivity type second semiconductor layer (13), and the second conductivity type fourth semiconductor layer (23) such that the channel layer (30) insulates the first connection part (90) from the first active layer (12) and from the second conductivity type second semiconductor layer (13).


     
    2. The light emitting device of claim 1, wherein the first electrode (80) is provided on the first conductivity type first semiconductor layer (11).
     
    3. The light emitting device of claim 1 or 2, wherein the second electrode (83) is disposed between the second conductivity type second semiconductor layer (13) and the conductive support member (70).
     
    4. The light emitting device of any one of claims 1 to 3, wherein the third electrode (85) is provided on the first conductivity type third semiconductor layer (21).
     
    5. The light emitting device of any one of claims 1 to 4, wherein the fourth electrode (87) is disposed between the second conductivity type fourth semiconductor layer (23) and the conductive support member (70).
     
    6. The light emitting device of any one of claims 1 to 5, wherein one end of the third connection part (97) is spaced apart from- a lateral side of the second light emitting structure (20) and exposed to a lateral side of the second light emitting structure (20).
     
    7. The light emitting device of any one of claims 1 to 6, wherein a top surface of the channel layer (30) is higher than top surfaces of the first and second active layers (12; 22).
     
    8. The light emitting device of any one of claims 1 to 7, further comprising: an insulating layer (40) provided between the second electrode (83) and the conductive support member (70) and between the fourth electrode (87) and the conductive support member (70).
     
    9. The light emitting device of claim 8, wherein a top surface of the insulating layer (40) is exposed to a periphery of a bottom portion of the second light emitting structure (20).
     
    10. The light emitting device of claim 8 or claim 9, wherein the insulating layer (40) surrounds the channel layer (30).
     
    11. The light emitting device of any one of claims 1 to 10, wherein the first connection part (90) makes contact with a lateral side of the first conductivity type first semiconductor layer (11).
     
    12. The light emitting device of any one of claims 1 to 11, wherein the first connection part (90) passes through the channel layer (30).
     
    13. The light emitting device of any one of claims 1 to 12, further comprising: a roughness on the first and second light emitting structures (10; 20).
     


    Ansprüche

    1. Lichtemittierungsvorrichtung umfassend:

    ein leitendes Trägerelement (70);

    eine erste Lichtemittierungsstruktur (10) auf dem leitenden Trägerelement (70), wobei die erste Lichtemittierungsstruktur (10) eine erste Halbleiterschicht eines ersten Leitfähigkeitstyps (11), eine erste aktive Schicht (12) unter der ersten Halbleiterschicht des ersten Leitfähigkeitstyps (11) und eine zweite Halbleiterschicht eines zweiten Leitfähigkeitstyps (13) unter der ersten aktiven Schicht (12) umfasst;

    eine zweite Lichtemittierungsstruktur (20) auf dem leitenden Trägerelement (70), wobei die zweite Lichtemittierungsstruktur (20) eine dritte Halbleiterschicht eines ersten Leitfähigkeitstyps (21), eine zweite aktive Schicht (22) unter der dritten Halbleiterschicht des ersten Leitfähigkeitstyps (21) und eine vierte Halbleiterschicht eines zweiten Leitfähigkeitstyps (23) unter der zweiten aktiven Schicht (22) umfasst;

    eine Kanalschicht (30) um untere Abschnitte der ersten und der zweiten Lichtemittierungsstruktur (10, 20) herum, wobei die Kanalschicht (30) ein Ätzstopper ist, wenn eine Isolationsverarbeitung bezüglich der ersten und der zweiten Lichtemittierungsstruktur (10, 20) durchgeführt wird;

    eine erste Elektrode (80), die mit der ersten Halbleiterschicht des ersten Leitfähigkeitstyps (11) elektrisch verbunden ist;

    eine zweite Elektrode (83), die mit der zweiten Halbleiterschicht des zweiten Leitfähigkeitstyps (13) elektrisch verbunden ist;

    eine dritte Elektrode (85), die mit der dritten Halbleiterschicht des ersten Leitfähigkeitstyps (21) elektrisch verbunden ist;

    eine vierte Elektrode (87), die mit der vierten Halbleiterschicht des zweiten Leitfähigkeitstyps (23) elektrisch verbunden ist;

    ein erstes Verbindungsteil (90), das mit der ersten Elektrode (80) elektrisch verbunden ist;

    ein zweites Verbindungsteil (95), das mit der zweiten und der dritten Elektrode (83; 85) elektrisch verbunden ist; und

    ein drittes Verbindungsteil (97), das mit der vierten Elektrode (87) elektrisch verbunden ist und ein Ende aufweist, das auf der Kanalschicht (30) vorgesehen ist,

    dadurch gekennzeichnet, dass

    das erste Verbindungsteil (90) mit dem leitenden Trägerelement (70) elektrisch derart verbunden ist, dass der ersten und der zweiten Lichtemittierungsstruktur (10; 20) durch das leitende Trägerelement (70) und das dritte Verbindungsteil (97) eine elektrische Leistung zugeführt wird, und

    die Kanalschicht (30) die erste aktive Schicht (12), die zweite aktive Schicht (22), die zweite Halbleiterschicht des zweiten Leitfähigkeitstyps (13) und die vierte Halbleiterschicht des zweiten Leitfähigkeitstyps (23) derart umgibt, dass die Kanalschicht (30) das erste Verbindungsteil (90) von der ersten aktiven Schicht (12) und von der zweiten Halbleiterschicht des zweiten Leitfähigkeitstyps (13) isoliert.


     
    2. Lichtemittierungsvorrichtung nach Anspruch 1, wobei die erste Elektrode (80) auf der ersten Halbleiterschicht des ersten Leitfähigkeitstyps (11) vorgesehen ist.
     
    3. Lichtemittierungsvorrichtung nach Anspruch 1 oder 2, wobei die zweite Elektrode (83) zwischen der zweiten Halbleiterschicht des zweiten Leitfähigkeitstyps (13) und dem leitenden Trägerelement (70) angeordnet ist.
     
    4. Lichtemittierungsvorrichtung nach einem der Ansprüche 1 bis 3, wobei die dritte Elektrode (85) auf der dritten Halbleiterschicht des ersten Leitfähigkeitstyps (21) vorgesehen ist.
     
    5. Lichtemittierungsvorrichtung nach einem der Ansprüche 1 bis 4, wobei die vierte Elektrode (87) zwischen der vierten Halbleiterschicht des zweiten Leitfähigkeitstyps (23) und dem leitenden Trägerelement (70) angeordnet ist.
     
    6. Lichtemittierungsvorrichtung nach einem der Ansprüche 1 bis 5, wobei ein Ende des dritten Verbindungsteils (97) von einer lateralen Seite der zweiten Lichtemittierungsstruktur (20) beabstandet und zu einer lateralen Seite der zweiten Lichtemittierungsstruktur (20) exponiert ist.
     
    7. Lichtemittierungsvorrichtung nach einem der Ansprüche 1 bis 6, wobei eine obere Oberfläche der Kanalschicht (30) höher als obere Oberflächen der ersten und der zweiten aktiven Schicht (12; 22) ist.
     
    8. Lichtemittierungsvorrichtung nach einem der Ansprüche 1 bis 7, ferner umfassend: eine Isolierschicht (40), die zwischen der zweiten Elektrode (83) und dem leitenden Trägerelement (70) und zwischen der vierten Elektrode (87) und dem leitenden Trägerelement (70) vorgesehen ist.
     
    9. Lichtemittierungsvorrichtung nach Anspruch 8, wobei eine obere Oberfläche der Isolierschicht (40) zu einem Umfang eines Bodenabschnitts der zweiten Lichtemittierungsstruktur (20) exponiert ist.
     
    10. Lichtemittierungsvorrichtung nach Anspruch 8 oder Anspruch 9, wobei die Isolierschicht (40) die Kanalschicht (30) umgibt.
     
    11. Lichtemittierungsvorrichtung nach einem der Ansprüche 1 bis 10, wobei das erste Verbindungsteil (90) mit einer lateralen Seite der ersten Halbleiterschicht des ersten Leitfähigkeitstyps (11) in Kontakt ist.
     
    12. Lichtemittierungsvorrichtung nach einem der Ansprüche 1 bis 11, wobei das erste Verbindungsteil (90) durch die Kanalschicht (30) hindurchgeht.
     
    13. Lichtemittierungsvorrichtung nach einem der Ansprüche 1 bis 12, ferner umfassend: eine Rauhigkeit auf der ersten und der zweiten Lichtemittierungsstruktur (10; 20).
     


    Revendications

    1. Un dispositif d'émission de lumière comprenant :

    un élément de support conducteur (70) ;

    une première structure (10) d'émission de lumière située sur l'élément de support conducteur (70), la première structure (10) d'émission de lumière comprenant une première couche semi-conductrice (11) d'un premier type de conductivité, une première couche active (12) située sous la première couche semi-conductrice (11) du premier type de conductivité, et une deuxième couche semi-conductrice (13) d'un deuxième type de conductivité située sous la première couche active (12) ;

    une deuxième structure (20) d'émission de lumière située sur l'élément de support conducteur (70), la deuxième structure (20) d'émission de lumière comprenant une troisième couche semi-conductrice (21) du premier type de conductivité, une deuxième couche active (22) située sous la troisième couche semi-conductrice (21) du premier type de conductivité, et une quatrième couche semi-conductrice (23) du deuxième type de conductivité située sous la deuxième couche active (24) ;

    une couche de canal (30) située autour des parties inférieures des première et deuxième structures (10 ; 20) d'émission de lumière, la couche de canal (30) étant un bloqueur de gravure lorsqu'un traitement d'isolation est effectué par rapport aux première et deuxième structures (10 ; 20) d'émission de lumière ;

    une première électrode (80) connectée électriquement à la première couche semi-conductrice (11) du premier type de conductivité ;

    une deuxième électrode (83) connectée électriquement à la deuxième couche semi-conductrice (13) du deuxième type de conductivité ;

    une troisième électrode (85) connectée électriquement à la troisième couche semi-conductrice (21) du premier type de conductivité ;

    une quatrième électrode (87) connectée électriquement à la quatrième couche semi-conductrice (23) du deuxième type de conductivité ;

    une première partie de connexion (90) connectée électriquement à la première électrode (80) ;

    une deuxième partie de connexion (95) connectée électriquement aux deuxième et troisième électrodes (83 ; 85) ; et

    une troisième partie de connexion (97) reliée électriquement à la quatrième électrode (87) et ayant :

    une extrémité prévue sur la couche de canal (30),

    caractérisée en ce que

    la première partie de connexion (90) est connectée électriquement à l'élément de support conducteur (70) de telle sorte qu'une puissance électrique est fournie aux première et deuxième structures (10 ; 20) d'émission de lumière à travers l'élément de support conducteur (70) et de la troisième partie de connexion (97), et

    la couche de canal (30) entoure la première couche active (12), la deuxième couche active (22), la deuxième couche semi-conductrice (13) du deuxième type de conductivité et la quatrième couche semi-conductrice (23) du deuxième type de conductivité de telle sorte que la couche de canal (30) isole la première partie de connexion (90) vis-à-vis de la première couche active (12) et de la deuxième couche semi-conductrice (13) du deuxième type de conductivité.


     
    2. Le dispositif d'émission de lumière selon la revendication 1, dans lequel la première électrode (80) est prévue sur la première couche semi-conductrice (11) du premier type de conductivité.
     
    3. Le dispositif d'émission de lumière selon la revendication 1 ou la revendication 2, dans lequel la deuxième électrode (83) est disposée entre la deuxième couche semi-conductrice (13) du deuxième type de conductivité et l'élément de support conducteur (70).
     
    4. Le dispositif d'émission de lumière selon l'une quelconque des revendications 1 à 3, dans lequel la troisième électrode (85) est disposée sur la troisième couche semi-conductrice (21) du premier type de conductivité.
     
    5. Le dispositif d'émission de lumière selon l'une quelconque des revendications 1 à 4, dans lequel la quatrième électrode (87) est disposée entre la quatrième couche semi-conductrice (23) de deuxième type de conductivité et l'élément de support conducteur (70).
     
    6. Le dispositif d'émission de lumière selon l'une quelconque des revendications 1 à 5, dans lequel une extrémité de la troisième partie de connexion (97) est espacée d'un côté latéral de la deuxième structure (20) d'émission de lumière et est exposée à un côté latéral de la deuxième structure (20) d'émission de lumière.
     
    7. Le dispositif d'émission de lumière selon l'une quelconque des revendications 1 à 6, dans lequel une surface supérieure de la couche de canal (30) est plus élevée que les surfaces supérieures des première et deuxième couches actives (12 ; 22).
     
    8. Le dispositif d'émission de lumière selon l'une quelconque des revendications 1 à 7, comprenant en outre : une couche isolante (40) prévue entre la deuxième électrode (83) et l'élément de support conducteur (70) et entre la quatrième électrode (87) et l'élément de support conducteur (70).
     
    9. Le dispositif d'émission de lumière selon la revendication 8, dans lequel une surface supérieure de la couche isolante (40) est exposée à une périphérie d'une partie inférieure de la deuxième structure (20) d'émission de lumière.
     
    10. Le dispositif d'émission de lumière selon la revendication 8 ou la revendication 9, dans lequel la couche isolante (40) entoure la couche de canal (30).
     
    11. Le dispositif d'émission de lumière selon l'une quelconque des revendications 1 à 10, dans lequel la première partie de connexion (90) entre en contact avec un côté latéral de la première couche semi-conductrice (11) du premier type de conductivité.
     
    12. Le dispositif d'émission de lumière selon l'une quelconque des revendications 1 à 11, dans lequel la première partie de connexion (90) passe à travers la couche de canal (30).
     
    13. Le dispositif d'émission de lumière selon l'une quelconque des revendications 1 à 12, comprenant en outre : une rugosité sur les première et deuxième structures (10 ; 20) d'émission de lumière.
     




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    REFERENCES CITED IN THE DESCRIPTION



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    Patent documents cited in the description