(19)
(11)EP 2 975 108 B1

(12)EUROPEAN PATENT SPECIFICATION

(45)Mention of the grant of the patent:
18.04.2018 Bulletin 2018/16

(21)Application number: 15176104.6

(22)Date of filing:  09.07.2015
(51)International Patent Classification (IPC): 
C11D 11/00(2006.01)
C11D 7/32(2006.01)
C11D 3/20(2006.01)
C11D 3/30(2006.01)
C11D 7/26(2006.01)
C11D 3/37(2006.01)
C11D 3/33(2006.01)
H01L 21/02(2006.01)

(54)

COPPER CORROSION INHIBITION SYSTEM

KUPFERKORROSIONSHEMMUNGSSYSTEM

SYSTÈME D'INHIBITION DE CORROSION DU CUIVRE


(84)Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

(30)Priority: 14.07.2014 US 201462024046 P
02.07.2015 US 201514790966

(43)Date of publication of application:
20.01.2016 Bulletin 2016/03

(73)Proprietor: Versum Materials US, LLC
Tempe, AZ 85284 (US)

(72)Inventors:
  • LIU, Wen Dar
    302 Hsinchu Hsien (TW)
  • INAOKA, Seiji
    Macungie, PA Pennsylvania 18062 (US)
  • LEE, Yi-Chia
    Chupei City, HsinChu County, 30267 (TW)
  • DERECSKEI-KOVACS, Agnes
    Macungie, PA Pennsylvania 18062 (US)

(74)Representative: Andrae | Westendorp Patentanwälte Partnerschaft 
Uhlandstraße 2
80336 München
80336 München (DE)


(56)References cited: : 
EP-A1- 2 922 086
US-A1- 2002 077 259
US-A1- 2004 224 866
US-A1- 2001 050 350
US-A1- 2003 119 692
US-A1- 2012 172 272
  
      
    Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).


    Description

    CROSS-REFERENCE TO RELATED APPLICATIONS



    [0001] This patent application is a non-provisional of U.S. provisional patent application Serial No. 62/024,046, filed on July 14, 2014.

    BACKGROUND OF THE INVENTION



    [0002] The present invention relates to metal-corrosion inhibitors, metal-corrosion inhibition cleaning compositions, and metal-corrosion inhibition cleaning systems and methods of using the metal-corrosion inhibitors. The present invention relates to the applications applied to semiconductor devices containing delicate metal such as copper (Cu), tungsten (W), titanium (Ti), tantalum (Ta), cobalt (Co), and aluminum (Al), specifically copper interconnecting structures.

    [0003] As microelectronic fabrication integration levels have increased and patterned microelectronic device dimensions have decreased, it has become increasingly common in the art to employ copper metallizations, low-k and high-k dielectrics.

    [0004] In the manufacturing process, a thin film of photoresist is deposited on a wafer substrate, and then circuit design is imaged on the thin film. Following baking, the unpolymerized resist is removed with a photoresist developer. The resulting image is then transferred to the underlying material, which is generally a dielectric or metal; by way of reactive plasma etch gases or chemical etchant solutions. The etchant gases or chemical etchant solutions selectively attack the photoresist-unprotected area of the substrate. As a result of the plasma etching process, photoresist, etching gas and etched material by-products are deposited as residues around or on the side wall of the etched openings on the wafer or substrate.

    [0005] Removal of these etches and/or ash residues following the plasma etch and/or ashing process has proved problematic. Failure to completely remove or neutralize these residues can result in the absorption of moisture and the formation of undesirable materials that can cause corrosion to the metal structures. The circuitry materials are corroded by the undesirable materials and produce discontinuances in the circuitry wiring and undesirable increases in electrical resistance.

    [0006] Furthermore, in the metal wiring formation utilizing chemical mechanical polishing (CMP), both the surface and the back of a wafer are markedly contaminated with the polishing agent remaining after the metal polishing, a polishing scrap produced by the polishing and metal impurities contained in the polishing agent and the polishing pad, and therefore it is inevitable to clean the surface thereof after the polishing.

    [0007] In general, in order to remove particles present on a wafer surface, it is desired to carrying out a cleaning with an alkaline solution, because it is important to inhibit readhesion of particles once removed out of the surface thereof.

    [0008] While, in order to remove metal impurities effectively, it is desired to carry out the cleaning with an acid solution having a strong metal dissolution power. However, as is known, a metal is subject to corrosion with these alkaline and acid solutions. Therefore, in the case where the wafer surface on which the metal wiring lays bare is cleaned with these solutions, there is usually a problem that the metal surface after the cleaning is subjected to corrosion, thereby causing increase of a wiring resistance and moreover a breaking down of the wiring.

    [0009] An attempt to use corrosion inhibitors to avoid the metal-corrosion has been made.

    [0010] The various prior art compositions have drawbacks that include unwanted removal of metal or insulator layers and the corrosion of desirable metal layers, particularly copper or copper alloys features. Some prior art formulations employ corrosion inhibiting additives to prevent undesirable copper metal corrosion during the cleaning process. However, those conventional corrosion-inhibiting additives typically have detrimental effects on the cleaning process because those additives can interact with the residue and inhibit dissolution of such residue into the cleaning fluid.

    [0011] For example, the passivator chemistries, such as aromatic hydrocarbon compounds, for example, benzotriazole and 5-methylbenzimidazole, do not easily rinse off the copper surface after completion of the cleaning process. Such additives therefore remain on the surface sought to be cleaned, and result in contamination of the integrated circuits. Contamination of the integrated circuit can adversely increase the electrical resistance of contaminated areas and cause unpredictable conducting failure within the circuit.

    [0012] Other antioxidant (sacrificial) chemistries, such as catechol etc., have known to have bath life issues.

    [0013] More work has been done and summarized as follows.

    [0014] US 6,755,989 describes a semiconductor wafer cleaning formulation, including 1-21 wt % fluoride source, 20-55 wt % organic amine(s), 0. 5-40 wt % nitrogenous component, e. g. , a nitrogen-containing carboxylic acid or an imine, 23-50 wt % water, and 0-21 wt % metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

    [0015] US 6,224,785 describes a aqueous ammonium fluoride and amine containing compositions for cleaning inorganic residues on semiconductor substrates. The semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage by weight ranges shown: Ammonium fluoride and/or a derivative thereof; 1-21 wt %; an organic amine or mixture of two amines; 20-55 wt % water; 23-50 wt % a metal chelating agent or mixture of chelating agents. 0-21 wt %

    [0016] US 7,521,406 describes a microelectronic cleaning compositions for cleaning microelectronic substrates, and particularly cleaning compositions useful with and having improved compatibility with microelectronic substrates characterized by silicon dioxide, sensitive low-K or high-K dielectrics and copper, tungsten, tantalum, nickel, gold, cobalt, palladium, platinum, chromium, ruthenium, rhodium, iridium, hafnium, titanium, molybdenum, tin and other metallization, as well as substrates of Al or Al(Cu) metallizations and advanced interconnect technologies, are provided by microelectronic cleaning compositions comprising halogen acids, salts and derivatives thereof.
    US 2012/0172272 A1 discloses a cleaning composition for a semiconductor device and a method of cleaning a semiconductor device, the composition including about 0.001 to about 0.5 wt% of a fluorine compound, based on a total weight of the composition; about 0.1 to about 10 wt % of an alkyl, aryl, or aralkyl-substituted ammonium hydroxide compound, based on a total weight of the composition; about 0.1 to about 10 wt% of a nitrogencontaining carboxylic acid, based on a total weight of the composition; about 0.01 to about 1 wt% of a water-soluble polymer compound, based on a total weight of the composition; and water (see abstract). Examples 1 to 3 comprise a maximum amount of polyethyleneimine.
    US 2004/0224866 A1 discloses a cleaning solution for semiconductor substrates comprising an oxidizing agent, an acid and a fluorine compound, having a pH adjusted in the range of 3 to 10 by addition of a basic compound and having a concentration of water of 80% by weight or greater, (2) a cleaning solution for semiconductor substrates comprising an oxidizing agent, an acid, a fluorine compound and a corrosion inhibitor, having a pH adjusted in the range of 3 to 10 by addition of a basic compound and having a concentration of water of 80% by weight or greater (see abstract). Example 18 discloses the presence of 4 wt% of a multifunctional acid.
    US 2001/0050350 A1 discloses a semiconductor wafer cleaning formulation, including 1-21 % wt. fluoride source, 20-55% wt. organic amine(s), 0.5-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 23-50% wt. water, and 0-21% wt. metal chelating agent(s).

    [0017] It is therefore one object of the present invention to provide corrosion inhibitors for protection of copper structures on the semiconductor wafer or substrate.

    [0018] It is another object of the invention to provide corrosion inhibitors that are easily rinsed off the substrate by water or other rinse medium after the completion of the residue-removal process, thereby reducing contamination of the integrated circuit.

    [0019] It is another object of the present invention to provide chemical formulations (or compositions) and systems that effectively remove residue following a resist ashing step, and/or a CMP step, without attacking and/or potentially degrading delicate metal structures intended to remain on the wafer.

    [0020] It is another object of the present invention to provide methods of using the corrosion inhibitors, the chemical compositions and systems that effectively remove residue following a resist ashing step, and/or a CMP step.

    BRIEF SUMMARY OF THE INVENTION



    [0021] The needs are satisfied by using the disclosed metal corrosion inhibition compositions, methods, and systems.

    [0022] In one aspect, a metal corrosion inhibition cleaning composition is provided. The composition comprises:
    1. 1) 0.5 wt% to 2.0 wt% of at least one multi-functional acid;
    2. 2) 0.1 to 25 wt% of at least one multi-functional amine; and
    3. 3) remaining is substantially liquid carrier;
    wherein
    the multi-functional amine is an amine or a polyamine that has more than one amino group in one molecule;
    the multi-functional acid is an acid or a multi-acid that has more than one carboxylate groups in one molecule; and
    the liquid carrier is selected from the group consisting of organic solvent, water, and combinations thereof;
    wherein the multi-functional acid is a multi-functional acid without aromatic moieties and
    wherein pH of the metal corrosion inhibition cleaning composition ranges from 5 to 10; and at least one of the multi-functional acid and the multi-functional amine is non-polymeric.

    [0023] In another aspect, a method of cleaning a semiconductor wafercomprising:
    1. a) providing a semiconductor wafer having at least a surface containing at least one metal and residues;
    2. b) providing a metal corrosion inhibition cleaning composition comprising:
      1. (i) 0.5 wt% to 2.0 wt% of at least one multi-functional acid;
      2. (ii) 0.1 to 25 wt% of at least one multi-functional amine; and
      3. (iii) remaining is substantially liquid carrier;
      wherein
      the multi-functional amine is an amine or a polyamine that has more than one amino group in one molecule;
      the multi-functional acid is an acid or a multi-acid that has more than one carboxylate groups in one molecule; and
      the liquid carrier is selected from the group consisting of organic solvent, water, and combinations thereof;
      wherein the multi-functional acid is a multi-functional acid without aromatic moieties and
      wherein pH of the metal corrosion inhibition cleaning composition ranges from 5 to 10; and at least one of the multi-functional acid and the multi-functional amine is non-polymeric;
    3. c) contacting the semiconductor wafer with the metal corrosion inhibition cleaning composition; and
    4. d) cleaning the residues;
    wherein at least a portion of the surface having the residues is in contact with the metal corrosion inhibition cleaning composition.

    [0024] In yet another aspect, a semiconductor wafer cleaning system is provided. The system comprises:

    a semiconductor wafer having at least a surface containing at least one metal and residues; and

    a metal corrosion inhibition cleaning composition as described herein

    wherein at least a portion of the surface having the residues is in contact with the metal corrosion inhibition cleaning composition.

    [0025] The multi-functional amine includes, but is not limited to polyethylenimine, triamine, pentamine, hexamine, and combinations thereof.

    [0026] The multi-functional acid includes, but is not limited to dicarboxylic acid (such as malonic acid, malic acid et al) and combinations thereof; tricarboxylic acid (such as citric acid et al)and combinations thereof; tetracarboxylic acid (such as ethylenediaminetetraacetic acid (EDTA) et al) and combinations thereof.

    [0027] The organic solvent ranges up to 70 wt %; and includes, but is not limited to propylene glycol (PG), glycol ethers, aprotic solvents such as N-methylpyrrolidone (NMP), dimethyl sulfoxide (DMSO), dimethylacetamide (DMAC), sulfolane, dimethylformamide (DMF) and combinations thereof.

    [0028] The metal corrosion inhibition cleaning composition can further comprise fluoride source, base, and optionally metal chelating agent, surfactant, stabilizer, corrosion inhibitor, and buffering agent.

    [0029] The fluoride source ranges from 0.01wt% to 1.0wt%; and includes, but is not limited to hydrofluoric acid (HF), ammonium fluoride (NH4F), ammonium bifluoride (NH4HF2), tetramethylammonium fluoride (TMAF), and combinations thereof.

    [0030] The base ranges up to 50 wt%; and includes, but is not limited to triethanolamine (TEA) and substituted derivatives, diethanolamine and substituted derivatives, monoethanolamine and substituted derivatives, and combinations thereof.

    [0031] The metal corrosion inhibition cleaning composition has a pH ranging from 5 to 10.

    [0032] Other aspects, features and embodiments of the invention will be more fully apparent from the ensuing disclosure and appended claims.

    DETAILED DESCRIPTION OF THE INVENTION



    [0033] The present invention provides new metal corrosion inhibitors for copper (Cu), tungsten(W), titanium(Ti), tantalum(Ta), cobalt (Co), and aluminum(Al). The present invention further provides the new metal corrosion inhibitors containing cleaning compositions or compositions(they are used exchangeably) suitable for cleaning semiconductor substrates/wafers with surfaces containing delicate metal structures. The compositions are effective for clean the residues deriving from high density plasma etching followed by ashing with oxygen containing plasmas; and slurry particles and residues remaining after CMP (chemical mechanical polishing).

    [0034] The present invention advantagely uses a combination of two chemicals: at least one multi-functional amine; and at least one multi-functional acid.

    [0035] The multi-functional amine is an amine or a polyamine that has more than one amino group. The multi-functional acid is an acid or a multi-acid that has more than one carboxylate groups.

    [0036] Without desiring to be bound by theory, it is believed that the multi-functional amine (with multiple amino groups in one molecule) and multi-functional acid (with more than one carboxylate groups in one molecule) form a complex that stays being complexed. The complex provides functional groups that are specifically attracted to free metal atoms and thus attached to the metal surfaces through carboxylate moieties (the carboxylate groups are bridging between amines and metal such as Cu surface) to form protective layers to prevent the metal surfaces being corroded by cleaning compositions during the cleaning process. Thus, passivation of metal such as surface is through the inhibition of metal oxide formation, caused by blocking contact of metal with atmospheric oxygen.

    [0037] Moreover, the new metal corrosion inhibition compositions can be easily rinsed off by deionized water or other solutions and therefore leaves very little contamination on the copper surface after the cleaning operation.

    [0038] One of the benefits from the compositions is a long bath life as this polyamine-polyacid complex is not considered as an antioxidant. This complex still employs the use of passivating agent to protect Cu from corrosion: its adsorption energy is much lower than that of widely adopted Cu corrosion inhibitor, like benzotriazole or other thiazole derivatives.

    [0039] More specifically, the metal corrosion inhibition cleaning compositions contain (i)at least one amine or polyamine that has more than one amino groups; (ii) at least one acid or multi-acid that has more than one carboxylate groups; and (iii)remaining is substantially liquid carrier which includes, but is not limited to organic solvent, water, and combinations thereof.

    [0040] The metal corrosion inhibition cleaning compositions can further contain (iv) fluoride source, and (v)base.

    [0041] Optionally, the compositions may contain one or more of metal chelating agents, surfactant, stabilizer, corrosion inhibitor, and buffering agent.

    [0042] The multi-functional amine(the amine or polyamine that has more than one amino group) includes, but is not limited to, polyethylenimine, triamine, pentamine, and hexamine.

    [0043] The compositions suitably contain from 0.0 wt% to 30 wt% of the multi-functional amine; preferably from 0.1wt% to 25 wt%, and more preferably from 0.5 wt% to 20 wt% amine or polyamine that has more than one amino groups.

    [0044] The multi-functional acid is an acid or a multi-acid that has more than one carboxylate groups includes, but is not limited to (i) dicarboxylate acid (such as malonic acid, malic acid, et al); and combinations thereof; (ii)tricarboxylic acid (such as citric acid et al), and combinations thereof; and (iii)tetracarboxylic acid (such as ethylenediaminetetraacetic acid (EDTA) et al) and combinations thereof.

    [0045] The compositions suitably contain from 0.1 wt% to 5 wt% of multi-functional acid; preferably from 0.25 wt% to 3 wt%, and more preferably from 0.5 wt% to 2.0 wt% acid or multi-acid that has more than one carboxylate groups.

    [0046] The fluoride source includes, but is not limited to hydrofluoric acid (HF), ammonium fluoride (NH4F), ammonium bifluoride (NH4HF2), tetramethylammonium fluoride (TMAF).

    [0047] The compositions suitably contain from 0.01wt% to 1.0wt% fluoride source, preferably from 0.1wt% to 1.0 wt%, and more preferably from 0.5wt% to 1.0 wt% fluoride source.

    [0048] The organic solvent includes, but is not limited to propylene glycol (PG), glycol ethers, aprotic solvents such as N-methylpyrrolidone (NMP), dimethyl sulfoxide (DMSO), dimethylacetamide (DMAC), sulfolane and dimethylformamide (DMF).

    [0049] The compositions suitably contain up to 70 wt% organic solvent; preferably up to 60 wt%, and more preferably up to 50 wt% organic solvent.

    [0050] The compositions suitably contain up to 30 wt% water, preferably up to 25 wt%, and more preferably up to 22 wt% water.

    [0051] The compositions suitably contain other amines as a base to effectively remove residues. The amines can include, but are not limited to triethanolamine (TEA), diethanolamine, monoethanolamine and their substituted derivatives.

    [0052] The compositions suitably contain up to 50 wt% base; preferably up to 40 wt%, and more preferably up to 30 wt% base.

    [0053] The compositions may contain one or more metal chelating agents, surfactants, stabilizers, corrosion inhibitors, buffering agents, and co-solvents, as useful or desired in a given end use application of compositions of the invention.

    [0054] Additionally, compositions of the present invention have a pH ranging from 5 to 10; preferably 6 to 9, and more preferably 7.5 to 8.5.

    Working Examples



    [0055] The features and advantages of the invention are more fully shown by the following non-limiting examples. In the examples presented below, all percentages were weight percentages unless otherwise indicated. pH for the compositions was around 7.5 to 8.5.

    EXAMPLE 1



    [0056] Working composition 45 comprised 49.34 wt% PG, 4.13 wt % citric acid (29% concentration in water), 28.55 wt % TEA, 16.98 wt % HF (5% concentration in water), and 1.00 wt % polyethylenimine(mw=800).

    [0057] The chemical constituents for comparative compositions 45A, 45C, 45G and 47N; and for working composition 45D were shown in Table I.

    [0058] Composition 45A was prepared by replacing citric acid (having three carboxylate groups) with acetic acid (having one carboxylate group). Thus, Composition 45A did not have a multi-functional acid.

    [0059] Composition 45C was prepared by replacing polyethylenimine(mw=800)(a multi-functional amine) with monoethanolamine(MEA) (non-multi-functional amine).
    Thus, Composition 45C did not have a multi-functional amine. In addition, citric acid was replaced by polyacrylic acid (aliphatic polybasic acid) (35 % concentration in water).

    [0060] Composition 45D was prepared by replacing part (23.95 wt%) of PG with DIW. Thus, Composition 45D was a more aqueous composition of 45.

    [0061] Please note that the additional small amount of DIW in 45A, 45C and 45G should not affect the performance of Cu ER, since there were water in the compositions from, for example, citric acid (29% concentration in water), HF (5% concentration in water), and polyacrylic acid (35 % concentration in water).
    Table I
     4545A45C45D45G47N
    Water   3.01   23.94 0.49 23.72
    Propylene glycol 49.34 49.34 49.34 25.40 49.85 25.40
    Citric acid (29%) 4.13     4.13 4.13 5.35
    Acetic acid   1.12        
    Triethanolamine 28.55 28.55 28.55 28.55 28.55 28.55
    HF (5%) 16.98 16.98 16.98 16.98 16.98 16.98
    Polyacrylic acid (35%)     3.85      
    Polyethylenimine (Mw=800) 1.00 1.00   1.00    
    Monoethanolamine     1.39      
                 
    Cu etch rate (Å/min: 0-5min) 2.09 6.74 8.32 6.03 7.58 10.8
    Cu etch rate (Å/min: 15-30min) 0.80 8.84 10.07 4.11 7.55 8.10
    Cu etch rate (Å/min: 15-60min) 0.48 10.87 9.34 3.70 7.70 7.20


    [0062] Composition 45G was prepared without using polyethylenimine(mw=800). Thus, Composition 45G did not have a multi-functional amine.

    [0063] Composition 47N was a more aqueous composition of 45G. The composition had no multi-functional amine and part of PG was replaced by DIW.

    [0064] This set of compositions was tested on blank copper substrates. The etch rate (ER) for copper measured at 0-5, 15-30, and 15-60 minutes were shown in Table I.

    [0065] Working composition 45 provided the best corrosion inhibition for Cu. The Cu etch rate was less than 2.09Å/min.

    [0066] Comparative compositions without the novel corrosion inhibition system gave the following etch rates:

    45A having no multi-functional acid gave Cu ER of 6.74∼10.87Å/min;

    45C having no multi-functional amine gave Cu ER of 8.32∼10.07Å/min; and

    45G having no multi-functional amine, 7.55∼7.70Å/min; and

    more aqueous 47N having no multi-functional amine, 7.20 ∼10.80 Å/min.



    [0067] 45D having multi-functional amine and multi-functional acid; but with additional Dl water raised Cu etch rate a little but still gave a low etch rate of 3.7Å/min.

    [0068] This set of working examples has shown that the compositions containing corrosion inhibitors of the combination of multi-functional amine that has more than one amino groups, and multi-functional acid that has more than one carboxylate groups(for example, 3 carboxylate groups) gave the unexpected and unique synergetic corrosion inhibition effects.

    EXAMPLE 2



    [0069] This set of experiments was carried out to test compositions comprising citric acid and another multi-functional acid with aromatic moieties. The multi-functional acids with aromatic moieties were trimellitic acid, pyromellitic acid and phthalic acid.

    [0070] Composition 53J comprised 46.67 wt% PG, 4.83 wt % citric acid (29% concentration in water), 28.00 wt % TEA, 20.00 wt % HF (5% concentration in water), and 1.00 wt % polyethylenimine(mw=800).

    [0071] Comparative composition 53G was prepared by replacing a small part of citric acid in Composition 53J with 0.20 wt % of pyromellitic acid.

    [0072] As shown in Table II, Composition 53J provided the Cu etch rate of 0.28∼ 2.46Å/min. Composition 53G provided the Cu etch rate of 0.49∼ 3.19 Å/min. Thus, the addition of multi-functional acids with aromatic moieties did not affect the Cu ER.
    Table II
     53J(wt%)53G(wt%)
    Propylene glycol 46.17 46.67
    Citric acid (29%) 4.83 4.13
    Triethanolamine 28.00 28.00
    HF 5% 20.00 20.00
    Pyromellitic acid   0.20
    Polyethylenimine (Mw=800) 1.00 1.00
         
    Cu etch rate (Å/min: 0-15min) 2.46 3.19
    Cu etch rate (Å/min: 15-60min) 1.41 1.67

    COMPARATIVE EXAMPLE 3



    [0073] A set of experiments on composition 47 series was carried out to test the use of multi-functional acids with aromatic moieties in the compositions. The multi-functional acids with aromatic moieties tested were trimellitic acid, pyromellitic acid and phthalic acid.

    [0074] In addition, as shown in Table III, this set of experiments was carried out in compositions that were more aqueous. Those compositions allowed higher wt % usage of water.

    [0075] A group of experiments (composition 47A to 47B) was carried out to use one multi-functional acids with aromatic moieties in the compositions.

    [0076] Composition 47A was prepared with DIW, Propylene glycol (PG), Triethanolamine (TEA), HF (5% concentration in water), 2.20 wt% trimellitic acid (a multi-functional acid), and polyethylenimine(mw=800)(a multi-functional amine).

    [0077] Composition 47B was prepared very similarly as composition 47A, with DIW, PG, TEA, HF (5% concentration in water), 2.70 wt% phthalic acid (a multi-functional acid), and polyethylenimine(mw=800)(a multi-functional amine).

    [0078] As shown in Table III, the use of more than 2.0 wt % amount of those multi-functional acids with aromatic moieties alone (without the use of citric acid) raised Cu ER to 6.03 ∼6.52Å/min. and 6.75∼7.27Å/min. from compositions 47A and 47B respectively.

    [0079] Replacing a multi-functional acid without aromatic moieties with a multi-functional acid with aromatic moieties did not give a good Cu ER.
    Table III
     47A (wt%)47B (wt%)47L (wt%)47E (wt%)47F (wt%)47M (wt%)47H (wt%)47I (wt%)47J (wt%)
    Water 25.87 25.37 20.92 21.17 21.17 26.13 26.17 25.87 26.57
    Propylene glycol 25.40 25.40 25.40 25.40 25.40 25.40 25.40 25.40 25.40
    Citric acid (29%)     7.15 6.80 6.80        
    Acetic acid           1.94 1.80    
    Malic acid               2.10  
    Malonic acid                 1.40
    Triethanolamine 28.55 28.55 28.55 28.55 28.55 28.55 28.55 28.55 28.55
    HF (5%) 16.98 16.98 16.98 16.98 16.98 16.98 16.98 16.98 16.98
    Pyromellitic acid       0.10     0.10 0.10 0.10
    Trimellitic acid 2.20                
    Phthalic acid   2.70     0.10        
    Polyethylenimine (MW=800) 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00
    Cu etch rate (Å/min: 0-15min) 6.52 6.75 4.0 4.1 3.38 9.6 7.77 3.62 3.38
    Cu etch rate (Å/min: 15-60min) 6.03 7.27 2.6 2.6 2.78 7.2 7.68 3.01 2.79


    [0080] Another group of experiments (compositions 47E and 47F) was carried out to use at least two multi-functional acids in the composition: the combination of citric acid with trimellitic acid, pyromellitic acid or phthalic acid.

    [0081] Composition 47L prepared with one multi-functional acid, 7.15 wt % citric acid (29%) was used as the control for compositions 47E and 47F.

    [0082] Composition 47E was prepared with the combination of 6.8 wt % citric acid (29%) and 0.10 wt % pyromellitic acid.

    [0083] Composition 47F was prepared with the combination of 6.8 wt % citric acid (29%) and 0.10 wt % Phthalic acid.

    [0084] As shown in Table III, adding multi-functional acids with aromatic moieties to the compositions, did not affect the Cu etch rates. Composition 47L gave 2.6 ∼ 4.0Å/min., compositions 47E and 47F gave 2.6 4.1 ∼ Å/min. and 2.78 ∼ 3.38 Å/min. respectively. The results were in agreement with the result from Example 2 with less aqueous compositions.

    [0085] Yet another group of experiments (formulations, 47H, 47I and 47J) was carried out to test compositions using different groups of acids: composition 47H was prepared using acetic acid (having one carboxylate group, i.e. non-multi-functional acid); composition 47I was prepared using malic acid (having two carboxylate groups); and composition 47J was prepared using malonic acid (having two carboxylate groups). In addition, those compositions also used pyromellitic acid (multi-functional acid with aromatic moieties). Composition 47M prepared using acetic acid alone was used as the control for composition 47H.

    [0086] As shown in Table III, composition 47M with acetic acid alone had a high Cu ER (7.2 ∼ 9.6Å/min.), which was in agreement with the result (6.74 ∼ 10.87 Å/min.) from the less aqueous composition 45A (shown in Table I). The addition of 0.10 wt % pyromellitic acid in composition 47H slightly reduced but still gave the high Cu ER 7.68 ∼ 7.77 Å/min.

    [0087] The compositions 47I and 47J having multi-functional acids malic acid and malonic acid gave lower Cu ER of 3.01 ∼ 3.62 Å/min. and 2.79 ∼ 3.38 Å/min. respectively.

    [0088] This set of examples had again shown that the compositions gave the best corrosion inhibition system required a combination of multi-functional amine that has more than one amino groups and multi-functional acid that has more than one carboxylate groups(for example, 2 or 3 carboxylate groups). with less aqueous compositions.

    [0089] This set of examples has shown that the compositions allowed higher wt % usage of water without altering Cu compatibility.

    [0090] In conclusion, examples 1 to 3 demonstrated that compositions having a combination of multi-functional amine that has more than one amino groups, and multi-functional acid that has more than one carboxylate groups achieved unexpected and unique synergetic corrosion inhibition effects.

    COMPARATIVE EXAMPLE 4



    [0091] As shown in Table 4, Composition 45B was prepared with polyethylenimine(mw=800); and polyacrylic acid. However, soon after the two were mixed, sticky goo-like material was formed that was insoluble in water or organic solvents. It was strongly assumed that the gooey stuff was a complex resulting from the interaction between polyacid and polyamine. Interaction between polyamine and polyacid is known to be used to deposit a layer of films using Langmuir-Brodgett technique.

    [0092] Composition 47G had a smaller amount of 0.30 wt % of polyacrylic acid solution (35 % concentration in water) comparing with 45B. The composition 47G gave good Cu compatibility (Cu ER of 2.42 ∼ 3.64 Å/min) but the solution suffered turbidity issue.
    Table 4
     45B* (wt%)47G** (wt%)
    Water 0.28 20.77
    propylene glycol 49.23 25.40
    Citric acid (29%)   7.00
    Polyacrylic acid (35%) 3.85 0.30
    Triethanolamine 28.55 28.55
    HF (5%) 16.98 16.98
    Polyethylenimine (Mw=800) 1.00 1.00
    Cu etch rate (Å/min: 0-5min)   6.03
    Cu etch rate (Å/min: 15-30min)   4.11
    Cu etch rate (Å/min: 15-60min)   3.70
    * sticky goo-like material was formed
    **turbidity issue


    [0093] From the results coming out from compositions 45B and 47G, it's apparent that a right combination of a multifunctional acid and multifunctional amine is required to keep the multiacid-multiamine complex in aqueous media. To avoid the issues, it is the best that one of a multifunctional acid and a multifunctional amine is non-polymeric. The working examples have shown that these combinations with appropriate choice of molecules enabled formation of clear solutions.

    [0094] The choice of multifunctional acid molecules and multifunctional amine molecules can be from either (1) polymer molecules with multiple amine functional group and a small (oligomeric) molecule with multiple acidic functional group or (2) polymer molecule with multiple acidic functional group and a small (oligomeric) molecule with multiple amine functional groups.

    [0095] The working examples have shown that these combinations with appropriate choice of molecules enabled formation of clear solutions.

    COMPARATIVE EXAMPLE 5



    [0096] This set of experiments was carried out to test compositions as shown in Table 5. 106E was prepared with monoethanolamine (MEA) and citric acid. 106G/H/C/i/J/K were prepared with diethylenetriamine (DETA) and citric acid.
    Table 5
     MW*106E (wt%)106G (wt%)106H (wt%)106C (wt%)106i (wt%)106J (wt%)106K (wt%)
    DIW 18.015 3 4.90 8.29 8.29 8.30 6.00 11.50 18.00
    Citric acid (29%) 192.12 4 10.00 10.50 10.30 10.00 10.00 12.00 15.00
    Diethylenetriamine 103.17   17.77 18.14 18.70 21.00 25.00 30.00
    Monoethanolamine 61.08 22.10            
    Triethanolamine 149.18 8 27.00 25.65 26.19 27.00 27.00 15.50 1.00
    HF 15% 20.01 36.00 37.80 37.08 36.00 36.00 36.00 36.00
    Cu (0-30) e/r [A/min]   1.13 2.74 2.63 0.92 1.66 1.86 3.15
    MW*---molecular weight


    [0097] The result demonstrated that the compositions still provided good corrosion inhibition effects.


    Claims

    1. A metal corrosion inhibition cleaning composition comprising:

    1) 0.5 wt% to 2.0 wt% of at least one multi-functional acid;

    2) 0.1 to 25 wt% of at least one multi-functional amine;

    3) remaining is substantially liquid carrier; and
    optionally

    4) fluoride source;

    5) base;

    6) metal chelating agent;

    7) surfactant;

    8) stabilizer;

    9) corrosion inhibitor; and

    10) buffering agent;

    wherein
    the multi-functional amine is an amine or a polyamine that has more than one amino groups in one molecule;
    the multi-functional acid is an acid or a multi-acid that has more than one carboxylate groups in one molecule; and
    the liquid carrier is selected from the group consisting of organic solvent, water, and combinations thereof;
    wherein the multi-functional acid is a multi-functional acid without aromatic moieties;
    wherein pH of the metal corrosion inhibition cleaning composition ranges from 5 to 10; and at least one of the multi-functional acid and the multi-functional amine is non-polymeric.
     
    2. The metal corrosion inhibition cleaning composition of Claim 1, wherein the multi-functional amine is selected from the group consisting of polyethylenimine, triamine, pentamine, hexamine, and combinations thereof.
     
    3. The metal corrosion inhibition cleaning composition of Claims 1 or 2, wherein the multi-functional acid is selected from the group consisting of (i) dicarboxylate acid, and combinations thereof; (ii) tricarboxylic acid, and combinations thereof; and (iii) tetracarboxylic acid, and combinations thereof.
     
    4. The metal corrosion inhibition cleaning composition of Claims 1 to 3, wherein the organic solvent is selected from the group consisting of propylene glycol (PG), glycol ethers, aprotic solvents such as N-methylpyrrolidone (NMP), dimethyl sulfoxide (DMSO), dimethylacetamide (DMAC), sulfolane, dimethylformamide (DMF) and combinations thereof; and the organic solvent ranges up to 70 wt %.
     
    5. The metal corrosion inhibition cleaning composition of Claims 1 to 4, wherein the fluoride source is selected from the group consisting of hydrofluoric acid (HF), ammonium fluoride (NH4F), ammonium bifluoride (NH4HF2), tetramethylammonium fluoride (TMAF), and combinations thereof; and the fluoride source ranges from 0.01wt% to 1.0wt%; the base is selected from the group consisting of triethanolamine (TEA) and substituted derivatives, diethanolamine and substituted derivatives, monoethanolamine and substituted derivatives, and combinations thereof; and the base ranges up to 50 wt%.
     
    6. A method of cleaning a semiconductor wafer comprising:

    a) providing the semiconductor wafer having at least a surface containing at least one metal and residues;

    b) providing a metal corrosion inhibition cleaning composition comprising;

    1) 0.5 wt% to 2.0 wt% of at least one multi-functional acid;

    2) 0.1 to 25 wt% of at least one multi-functional amine;

    3) remaining is substantially liquid carrier; and
    optionally

    4) fluoride source;

    5) base;

    6) metal chelating agent;

    7) surfactant;

    8) stabilizer;

    9) corrosion inhibitor; and

    10) buffering agent;

    wherein
    the multi-functional amine is an amine or a polyamine that has more than one amino groups in one molecule;
    the multi-functional acid is an acid or a multi-acid that has more than one carboxylate groups in one molecule; and
    the liquid carrier is selected from the group consisting of organic solvent, water, and combinations thereof;
    wherein the multi-functional acid is a multi-functional acid without aromatic moieties;
    wherein pH of the metal corrosion inhibition cleaning composition ranges from 5 to 10; and at least one of the multi-functional acid and the multi-functional amine is non-polymeric;

    c) contacting the semiconductor wafer with the metal corrosion inhibition cleaning composition; and

    d) cleaning the residues;

    wherein at least a portion of the surface having the residues is in contact with the metal corrosion inhibition composition.
     
    7. The method of cleaning a semiconductor wafer of Claim 6, wherein the metal is selected from the group consisting of copper(Cu), tungsten(W), titanium(Ti), tantalum(Ta), cobalt(Co), and aluminum(Al) and combinations thereof and is preferably copper (Cu); the residues are from high density plasma etching followed by ashing with oxygen containing plasmas; and from chemical mechanical polishing (CMP).
     
    8. The method of cleaning a semiconductor wafer of Claims 6 to 7, wherein
    the multi-functional amine is selected from the group consisting of polyethylenimine, triamine, pentamine, hexamine, and combinations thereof; the multi-functional acid is selected from the group consisting of (i) dicarboxylate acid, and combinations thereof; (ii)tricarboxylic acid, and combinations thereof; and (iii)tetracarboxylic acid, and combinations thereof; and
    the organic solvent is selected from the group consisting of propylene glycol (PG), glycol ethers, aprotic solvents such as N-methylpyrrolidone (NMP), dimethyl sulfoxide (DMSO), dimethylacetamide (DMAC), sulfolane, dimethylformamide (DMF) and combinations thereof; and the organic solvent ranges up to 70 wt %.
     
    9. The method of cleaning a semiconductor wafer of Claims 6 to 8, wherein the fluoride source is selected from the group consisting of hydrofluoric acid (HF), ammonium fluoride (NH4F), ammonium bifluoride (NH4HF2), tetramethylammonium fluoride (TMAF), and combinations thereof; and the fluoride source ranges from 0.01wt% to 1.0wt%; the base is selected from the group consisting of triethanolamine (TEA) and substituted derivatives, diethanolamine and substituted derivatives, monoethanolamine and substituted derivatives, and combinations thereof; and the base ranges up to 50 wt%.
     
    10. A semiconductor wafer cleaning system comprising:

    a semiconductor wafer having at least a surface containing at least one metal and residues;

    a metal corrosion inhibition cleaning composition according to claim 1

    wherein at least a portion of the surface having the residues is in contact with the cleaning composition.
     
    11. The semiconductor wafer cleaning system of Claim 10, wherein the metal is selected from the group consisting of copper(Cu), tungsten(W), titanium(Ti), tantalum(Ta), cobalt (Co), and aluminum(Al) and combinations thereof and preferably copper (Cu); the residues are from high density plasma etching followed by ashing with oxygen containing plasmas; and from chemical mechanical polishing (CMP).
     
    12. The semiconductor wafer cleaning system of Claims 10 to 11, wherein
    the multi-functional amine is selected from the group consisting of polyethylenimine, triamine, pentamine, hexamine, and combinations thereof; the multi-functional acid is selected from the group consisting of (i) dicarboxylate acid, and combinations thereof; (ii) tricarboxylic acid, and combinations thereof; and (iii) tetracarboxylic acid, and combinations thereof; and
    the organic solvent is selected from the group consisting of propylene glycol (PG), glycol ethers, aprotic solvents such as N-methylpyrrolidone (NMP), dimethyl sulfoxide (DMSO), dimethylacetamide (DMAC), sulfolane, dimethylformamide (DMF) and combinations thereof; and the organic solvent ranges up to 70 wt %.
     
    13. The metal corrosion inhibition cleaning composition according to Claims 1 to 5, the method of cleaning a semiconductor wafer of Claims 6 to 9 or the semiconductor wafer cleaning system of Claims 10 to 12, wherein the dicarboxylic acid is selected from the group consisting of malonic acid, malic acid, and combinations thereof; citric acid and ethylenediaminetetraacetic acid.
     


    Ansprüche

    1. Metallkorrosionsinhibierungs-Reinigungszusammensetzung, umfassend:

    1) 0,5 Gew.-% bis 2,0 Gew.-% von mindestens einer mehrfunktionellen Säure;

    2) 0,1 bis 25 Gew.-% von mindestens einem mehrfunktionellen Amin;

    3) einen Rest von einem im Wesentlichen flüssigen Träger; und gegebenenfalls

    4) Fluoridquelle;

    5) Base;

    6) metallchelatbildendes Mittel;

    7) grenzflächenaktives Mittel;

    8) Stabilisator;

    9) Korrosionsinhibitor; und

    10) pufferndes Mittel;

    wobei
    das mehrfunktionelle Amin ein Amin oder ein Polyamin, welches mehr als eine Aminogruppe in einem Molekül aufweist, ist;
    die mehrfunktionelle Säure eine Säure oder eine mehrwertige Säure, welche mehr als eine Carboxylatgruppe in einem Molekül aufweist, ist; und
    der flüssige Träger aus der Gruppe, welche aus organischem Lösungsmittel, Wasser und Kombinationen davon besteht, ausgewählt ist;
    wobei die mehrfunktionelle Säure eine mehrfunktionelle Säure ohne aromatische Einheiten ist;
    wobei der pH-Wert der Metallkorrosionsinhibierungs-Reinigungszusammensetzung in einem Bereich von 5 bis 10 liegt; und mindestens eine bzw. eines von der mehrfunktionellen Säure und dem mehrfunktionellen Amin nicht polymer ist.
     
    2. Metallkorrosionsinhibierungs-Reinigungszusammensetzung nach Anspruch 1, wobei das mehrfunktionelle Amin aus der Gruppe ausgewählt ist, welche aus Polyethylenimin, Triamin, Pentamin, Hexamin und Kombinationen davon besteht.
     
    3. Metallkorrosionsinhibierungs-Reinigungszusammensetzung nach den Ansprüchen 1 oder 2, wobei die mehrfunktionelle Säure aus der Gruppe ausgewählt ist, welche aus (i) Dicarboxylatsäure und Kombinationen davon; (ii) Tricarbonsäure und Kombinationen davon; und (iii) Tetracarbonsäure und Kombinationen davon besteht.
     
    4. Metallkorrosionsinhibierungs-Reinigungszusammensetzung nach den Ansprüchen 1 bis 3, wobei das organische Lösungsmittel aus der Gruppe ausgewählt ist, welche aus Propylenglycol (PG), Glycolethern, aprotischen Lösungsmitteln wie N-Methylpyrrolidon (NMP), Dimethylsulfoxid (DMSO), Dimethylacetamid (DMAC), Sulfolan, Dimethylformamid (DMF) und Kombinationen davon besteht; und das organische Lösungsmittel in einem Bereich von bis zu 70 Gew.-% vorliegt.
     
    5. Metallkorrosionsinhibierungs-Reinigungszusammensetzung nach den Ansprüchen 1 bis 4, wobei die Fluoridquelle aus der Gruppe ausgewählt ist, welche aus Fluorwasserstoffsäure (HF), Ammoniumfluorid (NH4F), Ammoniumbifluorid (NH4HF2), Tetramethylammoniumfluorid (TMAF) und Kombinationen davon besteht; und die Fluoridquelle in einem Bereich von 0,01 Gew.-% bis 1,0 Gew.-% vorliegt; die Base aus der Gruppe ausgewählt ist, welche aus Triethanolamin (TEA) und substituierten Derivaten, Diethanolamin und substituierten Derivaten, Monoethanolamin und substituierten Derivaten und Kombinationen davon besteht; und die Base in einem Bereich von bis zu 50 Gew.-% vorliegt.
     
    6. Verfahren von Reinigen eines Halbleiterwafers, umfassend:

    a) Bereitstellen des Halbleiterwafers mit mindestens einer Oberfläche, die mindestens ein Metall und Rückstände enthält;

    b) Bereitstellen einer Metallkorrosionsinhibierungs-Reinigungszusammensetzung, umfassend;

    1) 0,5 Gew.-% bis 2,0 Gew.-% von mindestens einer mehrfunktionellen Säure;

    2) 0,1 bis 25 Gew.-% von mindestens einem mehrfunktionellen Amin;

    3) einen Rest von einem im Wesentlichen flüssigen Träger; und gegebenenfalls

    4) Fluoridquelle;

    5) Base;

    6) metallchelatbildendes Mittel;

    7) grenzflächenaktives Mittel;

    8) Stabilisator;

    9) Korrosionsinhibitor; und

    10) pufferndes Mittel;

    wobei
    das mehrfunktionelle Amin ein Amin oder ein Polyamin, welches mehr als eine Aminogruppe in einem Molekül aufweist, ist;
    die mehrfunktionelle Säure eine Säure oder eine mehrwertige Säure, welche mehr als eine Carboxylatgruppe in einem Molekül aufweist, ist; und
    der flüssige Träger aus der Gruppe, welche aus organischem Lösungsmittel, Wasser und Kombinationen davon besteht, ausgewählt ist;
    wobei die mehrfunktionelle Säure eine mehrfunktionelle Säure ohne aromatische Einheiten ist;
    wobei der pH-Wert der Metallkorrosionsinhibierungs-Reinigungszusammensetzung in einem Bereich von 5 bis 10 liegt; und mindestens eine bzw. eines von der mehrfunktionellen Säure und dem mehrfunktionellen Amin nicht polymer ist;

    c) Inkontaktbringen des Halbleiterwafers mit der Metallkorrosionsinhibierungs-Reinigungszusammensetzung; und

    d) Reinigen der Rückstände;

    wobei mindestens ein Teil der Oberfläche mit den Rückständen mit der Metallkorrosionsinhibierungs-Zusammensetzung in Kontakt ist.
     
    7. Verfahren von Reinigen eines Halbleiterwafers nach Anspruch 6, wobei das Metall aus der Gruppe ausgewählt ist, welche aus Kupfer (Cu), Wolfram (W), Titan (Ti), Tantal (Ta), Cobalt (Co) und Aluminium (Al) und Kombinationen davon besteht, und bevorzugt Kupfer (Cu) ist; wobei die Rückstände von Hochdichteplasmaätzen, gefolgt von Veraschen mit sauerstoffhaltigen Plasmen; und von chemisch-mechanischem Polieren (CMP) stammen.
     
    8. Verfahren von Reinigen eines Halbleiterwafers nach den Ansprüchen 6 bis 7, wobei das mehrfunktionelle Amin aus der Gruppe ausgewählt ist, welche aus Polyethylenimin, Triamin, Pentamin, Hexamin und Kombinationen davon besteht;
    die mehrfunktionelle Säure aus der Gruppe ausgewählt ist, welche aus (i) Dicarboxylatsäure und Kombinationen davon; (ii) Tricarbonsäure und Kombinationen davon; und (iii) Tetracarbonsäure und Kombinationen davon besteht; und
    das organische Lösungsmittel aus der Gruppe ausgewählt ist, welche aus Propylenglycol (PG), Glycolethern, aprotischen Lösungsmitteln wie N-Methylpyrrolidon (NMP), Dimethylsulfoxid (DMSO), Dimethylacetamid (DMAC), Sulfolan, Dimethylformamid (DMF) und Kombinationen davon besteht; und das organische Lösungsmittel in einem Bereich von bis zu 70 Gew.-% vorliegt.
     
    9. Verfahren von Reinigen eines Halbleiterwafers nach den Ansprüchen 6 bis 8, wobei die Fluoridquelle aus der Gruppe ausgewählt ist, welche aus Fluorwasserstoffsäure (HF), Ammoniumfluorid (NH4F), Ammoniumbifluorid (NH4HF2), Tetramethylammoniumfluorid (TMAF) und Kombinationen davon besteht; und die Fluoridquelle in einem Bereich von 0,01 Gew.-% bis 1,0 Gew.-% vorliegt; die Base aus der Gruppe ausgewählt ist, welche aus Triethanolamin (TEA) und substituierten Derivaten, Diethanolamin und substituierten Derivaten, Monoethanolamin und substituierten Derivaten und Kombinationen davon besteht; und die Base in einem Bereich von bis zu 50 Gew.-% vorliegt.
     
    10. Halbleiterwafer-Reinigungssystem, umfassend:

    einen Halbleiterwafer mit mindestens einer Oberfläche, welche mindestens ein Metall und Rückstände enthält;

    eine Metallkorrosionsinhibierungs-Reinigungszusammensetzung gemäß Anspruch 1,

    wobei mindestens ein Teil der Oberfläche mit den Rückständen mit der Reinigungszusammensetzung in Kontakt ist.


     
    11. Halbleiterwafer-Reinigungssystem nach Anspruch 10, wobei das Metall aus der Gruppe ausgewählt ist, welche aus Kupfer (Cu), Wolfram (W), Titan (Ti), Tantal (Ta), Cobalt (Co) und Aluminium (Al) und Kombinationen davon besteht, und bevorzugt Kupfer (Cu) ist; wobei die Rückstände von Hochdichteplasmaätzen, gefolgt von Veraschen mit sauerstoffhaltigen Plasmen; und von chemisch-mechanischem Polieren (CMP) stammen.
     
    12. Halbleiterwafer-Reinigungssystem nach den Ansprüchen 10 bis 11, wobei
    das mehrfunktionelle Amin aus der Gruppe ausgewählt ist, welche aus Polyethylenimin, Triamin, Pentamin, Hexamin und Kombinationen davon besteht;
    die mehrfunktionelle Säure aus der Gruppe ausgewählt ist, welche aus (i) Dicarboxylatsäure und Kombinationen davon; (ii) Tricarbonsäure und Kombinationen davon; und (iii) Tetracarbonsäure und Kombinationen davon besteht; und
    das organische Lösungsmittel aus der Gruppe ausgewählt ist, welche aus Propylenglycol (PG), Glycolethern, aprotischen Lösungsmitteln wie N-Methylpyrrolidon (NMP), Dimethylsulfoxid (DMSO), Dimethylacetamid (DMAC), Sulfolan, Dimethylformamid (DMF) und Kombinationen davon besteht; und das organische Lösungsmittel in einem Bereich von bis zu 70 Gew.-% vorliegt.
     
    13. Metallkorrosionsinhibierungs-Reinigungszusammensetzung gemäß den Ansprüchen 1 bis 5, Verfahren von Reinigen eines Halbleiterwafers nach den Ansprüchen 6 bis 9 oder Halbleiterwafer-Reinigungssystem nach den Ansprüchen 10 bis 12, wobei die Dicarbonsäure aus der Gruppe ausgewählt ist, welche aus Malonsäure, Äpfelsäure und Kombinationen davon; Zitronensäure und Ethylendiamintetraessigsäure besteht.
     


    Revendications

    1. Une composition nettoyante inhibitrice de corrosion des métaux comprenant :

    1) 0,5 % en poids à 2,0 % en poids d'au moins un acide multifonctionnel ;

    2) 0,1 à 25 % en poids d'au moins une amine multifonctionnelle ;

    3) le reste est globalement un support liquide ; et,
    en option,

    4) une source de fluor ;

    5) une base ;

    6) un agent chélateur de métaux ;

    7) un tensioactif ;

    8) un stabilisateur ;

    9) un inhibiteur de corrosion ; et

    10) un agent tampon ;

    dans laquelle
    l'amine multifonctionnelle est une amine ou une polyamine qui compte plus d'un groupe amino dans une molécule ;
    l'acide multifonctionnel est un acide ou un multiacide qui compte plus d'un groupe carboxylate dans une molécule ; et
    le support liquide est choisi dans le groupe composé d'un solvant organique, de l'eau et de combinaisons de ceux-ci ;
    dans laquelle l'acide multifonctionnel est un acide multifonctionnel sans fraction aromatique ;
    dans laquelle le pH de la composition nettoyante inhibitrice de corrosion des métaux va de 5 à 10 ; et au moins un de l'acide multifonctionnel et de l'amine multifonctionnelle est non polymère.
     
    2. La composition nettoyante inhibitrice de corrosion des métaux selon la revendication 1, dans laquelle l'amine multifonctionnelle est choisie dans le groupe composé de polyéthylèneimine, de triamine, de pentamine, d'hexamine et de combinaisons de celles-ci.
     
    3. La composition nettoyante inhibitrice de corrosion des métaux selon la revendication 1 ou 2, dans laquelle l'acide multifonctionnel est choisi dans le groupe composé (i) d'acide dicarboxylique et de combinaisons de ceux-ci ; (ii) d'acide tricarboxylique et de combinaisons de ceux-ci ; et (iii) d'acide tétracarboxylique et de combinaisons de ceux-ci.
     
    4. La composition nettoyante inhibitrice de corrosion des métaux selon l'une des revendications 1 à 3, dans laquelle le solvant organique est choisi dans le groupe composé du propylène glycol (PG), d'éthers de glycol, de solvants aprotiques tels que la N-méthylpyrrolidone (NMP), le diméthylsulfoxyde (DMSO), le diméthylacétamide (DMAC), le sulfolane, le diméthylformamide (DMF) et des combinaisons de ceux-ci ; et le solvant organique est présent jusqu'à 70 % en poids.
     
    5. La composition nettoyante inhibitrice de corrosion des métaux selon l'une des revendications 1 à 4, dans laquelle la source de fluor est choisie dans le groupe composé de l'acide fluorhydrique (HF), du fluorure d'ammonium (NH4F), du bifluorure d'ammonium (NH4HF2), du fluorure de tétraméthylammonium et de combinaisons de ceux-ci ; et la source de fluor est présente dans une gamme de 0,01 % en poids à 1,0 % en poids ; la base est choisie dans le groupe composé de la triéthanolamine (TEA) et de dérivés substitués, de diéthanolamine et de dérivés substitués, de monoéthanolamine et de dérivés substitués et de combinaisons de ceux-ci ; et la base est présente jusqu'à 50 % en poids.
     
    6. Un procédé de nettoyage d'une galette de semiconducteur comprenant :

    a) la fourniture de la galette de semiconducteur possédant au moins une surface contenant au moins un métal et des résidus ;

    b) la fourniture d'une composition nettoyante inhibitrice de corrosion des métaux comprenant :

    1) 0,5 % en poids à 2,0 % en poids d'au moins un acide multifonctionnel ;

    2) 0,1 à 25 % en poids d'au moins une amine multifonctionnelle ;

    3) le reste est sensiblement un support liquide ; et,
    en option,

    4) une source de fluor ;

    5) une base ;

    6) un agent chélateur de métaux ;

    7) un tensioactif ;

    8) un stabilisateur ;

    9) un inhibiteur de corrosion ; et

    10) un agent tampon ;

    dans laquelle
    l'amine multifonctionnelle est une amine ou une polyamine qui compte plus d'un groupe amino dans une molécule ;
    l'acide multifonctionnel est un acide ou un multiacide qui compte plus d'un groupe carboxylate dans une molécule ; et
    le support liquide est choisi dans le groupe composé d'un solvant organique, de l'eau et de combinaisons de ceux-ci ;
    dans laquelle l'acide multifonctionnel est un acide multifonctionnel sans fraction aromatique ;
    dans laquelle le pH de la composition nettoyante inhibitrice de corrosion des métaux va de 5 à 10 ; et au moins un de l'acide multifonctionnel et de l'amine multifonctionnelle est non polymère ;

    c) la mise en contact de la galette de semiconducteur avec la composition nettoyante inhibitrice de corrosion des métaux ; et

    d) le nettoyage des résidus ;

    dans lequel au moins une partie de la surface présentant les résidus est en contact avec la composition inhibitrice de corrosion des métaux.
     
    7. Le procédé de nettoyage d'une galette de semiconducteur selon la revendication 6, dans lequel le métal est choisi dans le groupe composé du cuivre (Cu), du tungstène (W), du titane (Ti), du tantale (Ta), du cobalt (Co) et de l'aluminium (Al) et des combinaisons de ceux-ci et est de préférence le cuivre (Cu) ; les résidus proviennent d'une gravure au plasma à haute densité suivie par une calcination avec des plasmas contenant de l'oxygène ; et d'un polissage mécano-chimique (CMP).
     
    8. Le procédé de nettoyage d'une galette de semiconducteur selon l'une des revendications 6 à 7, dans lequel
    l'amine multifonctionnelle est choisie dans le groupe composé de polyéthylèneimine, de triamine, de pentamine, d'hexamine et de combinaisons de celles-ci ;
    l'acide multifonctionnel est choisi dans le groupe composé (i) d'acide dicarboxylique et de combinaisons de celui-ci ; (ii) d'acide tricarboxylique et de combinaisons de ceux-ci ; et (iii) d'acide tétracarboxylique et de combinaisons de ceux-ci ;
    et
    le solvant organique est choisi dans le groupe composé du propylène glycol (PG), d'éthers de glycol, de solvants aprotiques tels que la N-méthylpyrrolidone (NMP), le diméthylsulfoxyde (DMSO), le diméthylacétamide (DMAC), le sulfolane, le diméthylformamide (DMF) et des combinaisons de ceux-ci ; et le solvant organique est présent jusqu'à 70 % en poids.
     
    9. Le procédé de nettoyage d'une galette de semiconducteur selon l'une des revendications 6 à 8 dans lequel la source de fluor est choisie dans le groupe composé de l'acide fluorhydrique (HF), du fluorure d'ammonium (NH4F), du bifluorure d'ammonium (NH4HF2), du fluorure de tétraméthylammonium et de combinaisons de ceux-ci ; et la source de fluor est présente dans une gamme de 0,01 % en poids à 1,0 % en poids ; la base est choisie dans le groupe composé de la triéthanolamine (TEA) et de dérivés substitués, de diéthanolamine et de dérivés substitués, de monoéthanolamine et de dérivés substitués et de combinaisons de ceux-ci ; et la base est présente jusqu'à 50 % poids.
     
    10. Un système de nettoyage de galette de semiconducteur comprenant :

    une galette de semiconducteur possédant au moins une surface contenant au moins un métal et des résidus ;

    une composition nettoyante inhibitrice de corrosion des métaux selon la revendication 1,

    dans lequel au moins une partie de la surface contenant les résidus est en contact avec la composition nettoyante.


     
    11. Le système de nettoyage de galette de semiconducteur selon la revendication 10, dans lequel le métal est choisi dans le groupe composé du cuivre (Cu), du tungstène (W), du titane (Ti), du tantale (Ta), du cobalt (Co) et de l'aluminium (Al) et des combinaisons de ceux-ci et est de préférence le cuivre (Cu) ; les résidus proviennent d'une gravure au plasma à haute densité suivie par une calcination avec des plasmas contenant de l'oxygène ; et d'un polissage mécano-chimique (CMP).
     
    12. Le système de nettoyage de galette de semiconducteur selon l'une des revendications 10 à 11, dans lequel
    l'amine multifonctionnelle est choisie dans le groupe composé de polyéthylèneimine, de triamine, de pentamine, d'hexamine et de combinaisons de ceux-ci ;
    l'acide multifonctionnel est choisi dans le groupe composé (i) d'acide dicarboxylique et de combinaisons de ceux-ci ; (ii) d'acide tricarboxylique et de combinaisons de ceux-ci ; et (iii) d'acide tétracarboxylique et de combinaisons de ceux-ci ; et
    le solvant organique est choisi dans le groupe composé du propylène glycol (PG), d'éthers de glycol, de solvants aprotiques tels que la N-méthylpyrrolidone (NMP), le diméthylsulfoxyde (DMSO), le diméthylacétamide (DMAC), le sulfolane, le diméthylformamide (DMF) et des combinaisons de ceux-ci ; et le solvant organique est présent jusqu'à 70 % en poids.
     
    13. La composition nettoyante inhibitrice de corrosion des métaux selon l'une des revendications 1 à 5, le procédé de nettoyage d'une galette de semi-conducteur selon l'une des revendications 6 à 9 ou le système de nettoyage de galette de semi-conducteur selon l'une des revendications 10 à 12, dans lesquels l'acide dicarboxylique est choisi dans le groupe composé de l'acide malonique, de l'acide malique et de combinaisons de ceux-ci ; de l'acide citrique et de l'acide éthylènediaminetétraacétique.
     






    Cited references

    REFERENCES CITED IN THE DESCRIPTION



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    Patent documents cited in the description