(19)
(11)EP 2 999 000 A3

(12)EUROPEAN PATENT APPLICATION

(88)Date of publication A3:
30.03.2016 Bulletin 2016/13

(43)Date of publication A2:
23.03.2016 Bulletin 2016/12

(21)Application number: 15173935.6

(22)Date of filing:  25.06.2015
(51)Int. Cl.: 
H01L 29/78  (2006.01)
H01L 29/04  (2006.01)
H01L 29/51  (2006.01)
H01L 29/16  (2006.01)
H01L 29/10  (2006.01)
H01L 29/739  (2006.01)
(84)Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated Extension States:
BA ME
Designated Validation States:
MA

(30)Priority: 19.09.2014 JP 2014191061

(71)Applicant: Kabushiki Kaisha Toshiba
Tokyo 105-8001 (JP)

(72)Inventors:
  • Iijima, Ryosuke
    Minato-ku, Tokyo 105-8001 (JP)
  • Ohashi, Teruyuki
    Minato-ku, Tokyo 105-8001 (JP)
  • Shimizu, Tatsuo
    Minato-ku, Tokyo 105-8001 (JP)
  • Shinohe, Takashi
    Kawasaki, Kanagawa 212-8582 (JP)

(74)Representative: Moreland, David et al
Marks & Clerk LLP Aurora 120 Bothwell Street
Glasgow G2 7JS
Glasgow G2 7JS (GB)

  


(54)SEMICONDUCTOR DEVICE


(57) A semiconductor device according to an embodiment includes a SiC layer including a first region provided at a surface. The first region satisfies NA - ND < 5 × 1015 cm-3 when a concentration of a p-type impurity is denoted by NA, whereas a concentration of an n-type impurity is denoted by ND. The surface is inclined at 0 degrees or more and 10 degrees or less to a {000-1} face, or the surface having a normal direction inclined at 80 degrees or more and 90 degrees or less to a <000-1> direction. The device includes a gate electrode, a gate insulating film provided between the SiC layer and the gate electrode, and a second region provided between the first region and the gate insulating film. The second region has a nitrogen concentration higher than 1 × 1022 cm-3.