(19)
(11)EP 3 065 849 B1

(12)EUROPEAN PATENT SPECIFICATION

(45)Mention of the grant of the patent:
07.11.2018 Bulletin 2018/45

(21)Application number: 14784346.0

(22)Date of filing:  30.09.2014
(51)Int. Cl.: 
B01D 53/14  (2006.01)
B01D 53/68  (2006.01)
B01D 46/00  (2006.01)
B01D 53/40  (2006.01)
B01D 53/78  (2006.01)
(86)International application number:
PCT/GB2014/052953
(87)International publication number:
WO 2015/067921 (14.05.2015 Gazette  2015/19)

(54)

GAS TREATMENT APPARATUS

GASBEHANDLUNGSVORRICHTUNG

APPAREIL DE TRAITEMENT DE GAZ


(84)Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

(30)Priority: 05.11.2013 GB 201319533

(43)Date of publication of application:
14.09.2016 Bulletin 2016/37

(73)Proprietor: Edwards Limited
Burgess Hill West Sussex RH15 9TW (GB)

(72)Inventors:
  • SEELEY, Andrew James
    Clevedon Somerset BS21 6TH (GB)
  • POPE, Alexander Michael
    Clevedon Somerset BS21 6TH (GB)
  • COHN, Thomas Frank
    Clevedon Somerset BS21 6TH (GB)

(74)Representative: Norton, Ian Andrew et al
Edwards Limited Innovation Drive Burgess Hill
West Sussex RH15 9TW
West Sussex RH15 9TW (GB)


(56)References cited: : 
DE-A1- 2 235 332
US-A- 5 250 267
US-A- 5 215 557
  
      
    Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).


    Description

    FIELD OF THE INVENTION



    [0001] The present invention relates to a gas treatment apparatus. Embodiments relate to a gas treatment apparatus for treating gas containing solid particles such as, for example, SiO2 and acidic gases such as HCl.

    BACKGROUND



    [0002] Gas treatment apparatus are known. Such apparatus are used for treatment of effluent gases arising from epitaxial deposition processes. Epitaxial deposition processes are increasingly used for the manufacturing of high-speed semiconductor devices, both for silicon and compound semiconductor applications. An epitaxial layer is a carefully grown, single crystal silicon film. Epitaxial deposition utilizes a silicon source gas, typically silane or one of the chlorosilane compounds, such as trichlorosilane or dichlorosilane, in a hydrogen atmosphere at high temperature, typically around 800 - 1100°C, and under a vacuum condition. Epitaxial deposition processes are often doped with small amounts of boron, phosphorus, arsenic, germanium or carbon, as required, for the device being fabricated. Etching gases supplied to a process chamber may include halocompounds such as HCl, HBr, BCl3, Cl2 and Br2, and combinations thereof. Hydrogen chloride (HCl) or another halocompound, such as SF6 or NF3, may be used to clean the chamber between process runs.

    [0003] In such processes, only a small proportion of the gas supplied to the process chamber is consumed within the chamber, and so a high proportion of the gas supplied to the chamber is exhausted from the chamber, together with solid and gaseous by-products from the process occurring within the chamber. A process tool typically has a plurality of process chambers, each of which may be at respective different stage in a deposition, etching or cleaning process. Therefore, during processing a waste effluent stream formed from a combination of the gases exhausted from the chambers may have various different compositions.

    [0004] Before the waste stream is vented into the atmosphere, it is treated to remove selected gases and solid particles therefrom. Acid gases such as HF and HCl are commonly removed from a gas stream using a packed tower scrubber, in which the acid gases are taken into solution by a scrubbing liquid flowing through the scrubber. Silane is pyrophoric, and so before the waste stream is conveyed through the scrubber it is common practice for the waste stream to be conveyed through a thermal incinerator to react silane or other pyrophoric gas present within the waste stream with air. Any perfluorocompounds such as NF3 may also be converted into HF within the incinerator.

    [0005] When silane burns, large amounts of silica (SiO2) particles are generated. Whilst many of these particles may be taken into suspension by the scrubbing liquid within the packed tower scrubber, it has been observed that the capture of relatively smaller particles (for example, having a size less than 1 micron) by the scrubbing liquid is relatively poor. In view of this, it is known to provide an electrostatic precipitator downstream from the scrubber to remove these smaller particles from the waste stream.

    [0006] Although such apparatus provide for treatment of the effluent gas stream, they have a number of shortcomings. Accordingly, it is desired to provide an improved gas treatment apparatus.

    SUMMARY



    [0007] According to a first aspect, there is provided a gas treatment apparatus according to claim 1.

    [0008] The first aspect recognises that a problem with existing apparatus is that the volume that they occupy grows non-linearly in response to increasing flow rates of effluent gases to be treated and/or increases in the efficiency requirements for treatment of those effluent gases (typically expressed as a decrease in the concentration of the solid particles and/or acidic gases present in the treated gas stream).

    [0009] Accordingly, a gas treatment apparatus is provided. The apparatus comprises a gas scrubber chamber for receiving an effluent gas stream which originates from a manufacturing process tool. The effluent gas stream is to be treated by scrubbing within the gas scrubber chamber in order to generate, as an output, a scrubbed gas stream. The apparatus also comprises an electrostatic precipitation chamber which receives the scrubbed gas stream. The electrostatic precipitation chamber then treats the scrubbed gas stream and generates a treated gas stream. Either the electrostatic precipitation chamber defines a first chamber, whilst the other of the gas scrubber chamber defines a second chamber. The first chamber is arranged or configured to surround the second chamber. In this way, the first chamber and the second chamber can share the same volume, which enables a much more compact apparatus to be provided which reduces the size of the apparatus for any given flow rate or efficiency requirement compared to a conventional apparatus. Also, by surrounding the second chamber with the first chamber, a less complex assembly is required, which enables fewer parts to be used.

    [0010] The second chamber is retained within the first chamber.

    [0011] The first chamber surrounds the second chamber concentrically.

    [0012] The first chamber extends around the second chamber at least one of annularly and circumferentially.

    [0013] The first chamber and the second chamber share a common wall. Accordingly, a common wall may be provided which may separate the first chamber from the second chamber.

    [0014] An inner surface of the common wall defines an outer wall of the second chamber and an outer surface of the common wall defines inner wall of the first chamber. Accordingly, one side of the common wall may form part of the first chamber whilst another surface of the common wall may form part of the second chamber.

    [0015] The second chamber comprises an elongate chamber defined by the inner surface of the common wall and the first chamber comprises an elongate annular chamber defined by the outer surface of the common wall and an inner surface of an enclosing wall. Accordingly, the first and second chambers may be generally cylindrically shaped. The second chamber may be nested within the first chamber.

    [0016] The gas scrubbing chamber comprises a header tank at least partially defining the gas scrubbing chamber, the header tank being operable to provide a constant flow of a received liquid to the gas scrubbing chamber. Accordingly, a header tank may be provided which provides fluid which flows through the gas scrubbing chamber to remove particles accumulating therewithin. Providing a header tank ensures a constant flow of liquid through the gas scrubbing chamber.

    [0017] The electrostatic precipitation chamber comprises outlets for ejecting liquid to provide a circumferentially flowing liquid curtain therewithin. Accordingly, a circulating liquid curtain or weir is also provided within the electrostatic precipitation chamber to assist in the removal of particles accumulating therewithin.

    [0018] The electrostatic precipitation chamber defines the first chamber and the gas scrubbing chamber defines the second chamber. Accordingly, the gas scrubbing chamber may be provided within the electrostatic precipitation chamber.

    [0019] The electrostatic precipitation chamber comprises outlets for ejecting liquid to provide a circumferentially flowing liquid curtain along both the outer surface of the common wall and the inner surface of the enclosing wall. Accordingly, liquid curtains or weirs may be provided along both of the opposing surfaces of the electrostatic precipitation chamber in order to improve its efficiency.

    [0020] The electrostatic precipitation chamber comprises an elongate annular electrode structure located between the outer surface of the common wall and the inner surface of the enclosing wall. Accordingly, a generally cylindrical electrode structure may be provided within the electrostatic precipitation chamber.

    [0021] The elongate annular electrode structure extends axially along the electrostatic precipitation chamber.

    [0022] In one embodiment, the elongate annular electrode structure is located a constant distance between the outer surface of the common wall and the inner surface of the enclosing wall. By placing the structure at an equal distance between the walls of the electrostatic precipitation chamber, a constant electric field can be generated to assist in the removal of particles from the effluent gas stream.

    [0023] In one embodiment, the elongate annular electrode structure comprises discharge points extending towards the outer surface of the common wall and the inner surface of the enclosing wall.

    [0024] In one embodiment, a ratio of that number of the discharge points extending towards the outer surface of the common wall and that number of the discharge points extending towards the inner surface of the enclosing wall is proportional to a ratio of an area of the outer surface of the common wall and an area of the inner surface of the enclosing wall. This again helps to provide a uniform electric field within the electrostatic precipitation chamber.

    [0025] The gas scrubbing chamber comprises an effluent gas stream inlet for receiving the effluent gas stream and the electrostatic precipitation chamber comprises an treated gas stream outlet for providing treated gas stream, the effluent gas stream inlet and the treated gas stream outlet being positioned to cause gas flow along an axial length of both the gas scrubbing chamber and the electrostatic precipitation chamber. Accordingly, the effluent gas stream is arranged to travel along the axial length of both the gas scrubbing chamber and the electrostatic precipitation chamber. This effectively substantially doubles the process length of the apparatus.

    [0026] The gas scrubbing chamber comprises a conduit to convey the scrubbed gas stream to an inlet of the electrostatic precipitation chamber located away from the suspension structure. By conveying the scrubbed gas stream to a position which is distal from the suspension structure, the scrubbed gas stream is also treated by the electrostatic precipitation chamber prior to reaching the suspension structure which reduces the incidence of any deposits on the suspension structure which may otherwise lead to an insulation breakdown.

    [0027] In one embodiment, the inlet is located in a floor and the suspension structure is located in a ceiling of the gas scrubbing chamber.

    [0028] Further particular and preferred aspects are set out in the accompanying independent and dependent claims. Features of the dependent claims may be combined with features of the independent claims as appropriate, and in combinations other than those explicitly set out in the claims.

    [0029] Where an apparatus feature is described as being operable to provide a function, it will be appreciated that this includes an apparatus feature which provides that function or which is adapted or configured to provide that function.

    BRIEF DESCRIPTION OF THE DRAWINGS



    [0030] Embodiments of the present invention will now be described further, with reference to the accompanying drawings, in which:

    Figure 1 shows an external view and a section through the gas treatment apparatus which illustrate the flow of an effluent gas through the apparatus according to one embodiment;

    Figure 2 is an exploded view showing some components of the gas treatment apparatus;

    Figure 3 is a section view through the gas treatment apparatus;

    Figure 4 shows the arrangement of the sieve plate in more detail;

    Figure 5 shows the arrangement of the structure providing inner weir;

    Figure 6 illustrates the arrangement of the structure providing the outer weir;

    Figure 7 shows the electrode structure attachment arrangement in more detail;

    Figure 8 shows the arrangement of the electrode structure in more detail;

    Figure 9 shows the arrangement of the inner wall and the outer wall in more detail;

    Figure 10 shows the arrangement of the gas inlet and the sump in more detail;

    Figure 11 illustrates the fluid feed provided to feed the sieve plate; and

    Figure 12 shows an alternative embodiment of the outer wall which has a tapered or conical floor section.


    DESCRIPTION OF THE EMBODIMENTS


    Overview



    [0031] Before discussing the embodiments in any more detail, first an overview will be provided. Embodiments provide an arrangement where both a gas scrubbing chamber and an electrostatic precipitation chamber are fluidly connected in series but are concentrically arranged such that one is provided within the other. In other words, one of the chambers surrounds the other in a nested configuration to provide a compact arrangement. By controlling the configuration of the inlets and outlets to the two chambers, it is possible to extend the flow distance within the chambers to be around double the length of the apparatus. Also, by utilising additional conduits it is possible to extend the flow distance and entry points to the chambers in order to help reduce the build-up of problematic residues. This approach provides for a more compact apparatus with a significantly reduced part count since the outer chamber is at least partially defined by its retained inner chamber.

    Example Arrangement and Gas Flow



    [0032] Figures 1 to 3 illustrate the arrangement of a gas treatment apparatus, generally 10, according to one embodiment. Figure 1 shows an external view and a section through the gas treatment apparatus 10 which illustrate the flow of an effluent gas through the apparatus. Figure 2 is an exploded view showing some components of the gas treatment apparatus 10. Figure 3 is a section view through the gas treatment apparatus 10.

    [0033] In overview, the gas treatment apparatus 10 comprises an elongate cylindrical gas scrubber chamber 20 which is filled with packing materials (not shown). The gas scrubber chamber 20 comprises inlets 30 which receive the effluent gas to be processed and which flows in the direction A to B, advancing through the packing material towards a sieve plate 40. As will be explained in more detail below, the sieve plate 40 provides a fluid which flows within the gas scrubber chamber 20, through the packing material and through a sieve floor 50 back to a sump (not shown).

    [0034] Although in other embodiments it would be possible to provide a configuration where the effluent gas having passed through the scrubbing chamber 20 could exit the scrubbing chamber 20 in the vicinity of the sieve plate 40, this has been found to result in an increase in unwanted deposits within the surrounding electrostatic precipitation chamber 60 and so an arrangement is provided which utilises a downcomer 70 which receives the effluent gas treated by the gas scrubber chamber 20 and conveys it from the top of the gas scrubber chamber 20 in the direction C to beneath the sieve floor 50 and the floor of the gas scrubber chamber 20 and into a bottom portion of the electrostatic precipitation chamber 60.

    [0035] As can be seen, the electrostatic precipitation chamber 60 comprises an annular chamber which surrounds the gas scrubber chamber 20 concentrically. A dividing wall 80 (not shown in Figure 2) has an inner surface which defines the gas precipitation chamber 20 and an outer surface which defines an inner surface of the electrostatic precipitation chamber 60. An outer wall 90 has an inner surface which defines another surface of the electrostatic precipitation chamber 60.

    [0036] Positioned between the outer wall 90 and the inner wall 80 is an electrode structure 100 which is retained using an insulator structure 110 which retains the electrode structure 100 using an elongate conductor 170 in a top plate 120 retained and enclosing an upper end of the electrostatic precipitation chamber 60. The electrode structure 100 comprises a generally cylindrical structure having a supporting plate 130 from which a set of elongate electrodes 140 are arranged circumferentially and extend axially along the axial length of the electrostatic precipitation chamber 60.

    [0037] As can be seen in Figure 1, the effluent gas from the downcomer 70 enters the lower portion of the electrostatic precipitation chamber 60 and passes upwards in the direction D past the electrode structure 100 and exits through exhaust ports 150 in the direction E as treated gas.

    [0038] To facilitate the function of the electrostatic precipitation chamber 60, the outer surface of the inner wall 80 is provided with a fluid curtain flowing from the vicinity of the sieve plate 40 downwards towards the floor of the electrostatic precipitation chamber 60. Likewise, the inner surface of the outer wall 90 is provided with a fluid curtain flowing circumferentially from the vicinity of the top plate 120 down towards the floor of the electrostatic precipitation chamber 60.

    Sieve Plate



    [0039] Figure 4 shows the arrangement of the sieve plate 40 in more detail. As can be seen, the fluid (typically water) is fed through a lower surface of the sieve plate via fluid feeder conduits 75 positioned around the downer 70 which convey the fluid to the sieve plate 40. The sieve plate 40 maintains a head of fluid which flows out through an arrangement of holes 45 into the scrubbing chamber 20.

    Inner Weir WI



    [0040] The fluid retained by the sieve plate 40 also provides the fluid curtain or inner weir WI which flows down the surface of the inner wall 80. Fluid flows into the gallery 47 through a small gap, exits the lower surface of the gallery 47 and flows down the outer surface of the inner wall 80, as shown in Figure 5.

    Outer Weir Wo



    [0041] Figure 6 illustrates the arrangement of the structure providing the outer weir Wo in more detail. Coupled with the top plate 120 is a plurality of weir sections 125 arranged to form a ring retained by the top plate 120. Each ring section comprises a number of inlets 123 which receive a coupling 129 which provide a fluid. Fluidly coupled with each inlet 123 via a conduit 121 is an outlet 127 which is arranged to eject fluid tangentially from the weir section 125 to form the outer weir Wo which flows down the inner surface of the outer wall 90.

    Electrode Structure Attachment



    [0042] Figure 7 shows the electrode structure attachment arrangement in more detail. As can be seen, the electrode structure 100 is retained by a conductor 170 retained by a housing 160 extending from an upper surface of the top plate 120.

    [0043] An insulator 110 is provided to insulate the electrode structure 100 from the rest of the apparatus 10. The insulator 110 is typically made of glass and a gas purge is provided in order to reduce the concentration of treated effluent gas in the vicinity of the insulator 110, which helps prevent deposits on the insulator which may otherwise lead to the insulator being compromised. As mentioned above, by providing the downer 70, the treated gas in the vicinity of the insulator 110 will have been fully processed by both the gas scrubber chamber 20 and the electrostatic precipitation chamber 60 and so is less likely to cause such deposits.

    Electrode Structure



    [0044] Figure 8 shows the arrangement of the electrode structure 100 in more detail. The lower portion of Figure 8 also shows a schematic representation showing the relationship of the electrode structure 100 in relation to the inner wall 80 and the outer wall 90. As can be seen, a number of concentrically arranged elongate electrodes 140 are provided having spikes 150 which extend radially either towards the inner wall 80 or the outer wall 90. In order to maintain a uniform density of discharge points provided by these electrode spikes 150, the ratio of the number of electrode spikes 150 extending towards the inner wall 80 compared to the number of electrode spikes 150 extending towards the outer wall 90 is proportionate to the ratio of the area of the inner wall 80 compared to the outer wall 90.

    Concentric Arrangement



    [0045] Figure 9 shows the arrangement of the inner wall 80 and the outer wall 90 in more detail. As can be seen, the inner wall 80 is retained within the outer wall 90.

    Gas Inlet and Sump



    [0046] Figure 10 shows the arrangement of the gas inlet and the sump in more detail. As can be seen, effluent gas to be treated is received through an inlet 200, flows into a sump structure 210 and is fed through the inlets 30 into the lower portion of the gas scrubber chamber 20. Also within the sump structure 210 is fluid containing contaminants extracted from the effluent gas as it is treated within both the scrubbing chamber 20 and the electrostatic precipitation chamber 60. The fluid from the gas scrubbing chamber 20 flows through the inlets 30 into the sump structure 210, whilst the fluid from the electrostatic precipitation chamber 60 flows through conduits 220 into the sump structure 210.

    Sieve Plate Fluid Feed



    [0047] Figure 11 illustrates the fluid feed provided to feed the sieve plate 40. An inlet 230 is coupled with a fluid supply and conveys fluid via a conduit 240 to a coupling with the feeder conduit 75 which feeds the sieve plate 40.

    Tapered Floor



    [0048] Figure 12 shows an alternative embodiment of the outer wall 90 which has a tapered or conical floor section 95 which helps prevent the build-up of any sludge on the floor of the electrostatic precipitation chamber 60.

    [0049] Accordingly, it can be seen that an arrangement is provided which enables both a gas scrubber chamber 20 and an electrostatic precipitation chamber 60 to be provided to perform series treatment of an effluent gas in a much more compact form than was previously possible due to the concentric arrangement of the two treatment chambers. This enables a smaller apparatus to be provided or enables a higher rate of effluent gas treatment for the same apparatus volume.

    [0050] Although illustrative embodiments of the invention have been disclosed in detail herein, with reference to the accompanying drawings, it is understood that the invention is not limited to the precise embodiment and that various changes and modifications can be effected therein by one skilled in the art without departing from the scope of the invention as defined by the appended claims and their equivalents.


    Claims

    1. A gas treatment apparatus, comprising:

    a gas scrubber chamber (20) operable to receive an effluent gas stream originating from a manufacturing process tool to be scrubbed therewithin to provide a scrubbed gas stream; and

    an electrostatic precipitation chamber (60) operable to receive said scrubbed gas stream to be treated therewithin to provide a treated gas stream, said electrostatic precipitation chamber defining a first chamber (60) and said gas scrubber chamber defining a second chamber (20), said first chamber being configured to concentrically surround said second chamber, wherein said first chamber and said second chamber share a common wall (80), an inner surface of said common wall defining an outer wall of said second chamber and an outer surface of said common wall defining an inner wall of said first chamber; said second chamber (20) comprising an elongate chamber defined by said inner surface of said common wall (80) and said first chamber (60) comprising an elongate annular chamber defined by said outer surface of said common wall (80) and an inner surface of an enclosing wall (90); wherein said electrostatic precipitation chamber comprises an elongate annular electrode structure (100) located between said outer surface of said common wall (80) and said inner surface of said enclosing wall (90), and outlets for ejecting liquid to provide a circumferentially flowing liquid curtain along both said outer surface of said common wall and said inner surface of said enclosing wall;

    wherein said gas scrubbing chamber comprises a header tank at least partially defining said gas scrubbing chamber and comprising a sieve plate (40), said header tank being operable to provide a constant flow of a received liquid to said gas scrubbing chamber through said sieve plate (40) and provides the liquid curtain which flows down the outer surface of the common wall (80); wherein said gas scrubbing chamber comprises an effluent gas stream inlet for receiving said effluent gas stream and a conduit (70) to convey said scrubbed gas stream to an inlet of said electrostatic precipitation chamber located away from a suspension structure for said elongate annular electrode structure, said electrostatic precipitation chamber comprising an treated gas stream outlet for providing treated gas stream, said effluent gas stream inlet and said treated gas stream outlet being positioned to cause gas flow along an axial length of both said gas scrubbing chamber and said electrostatic precipitation chamber.


     
    2. The apparatus of claim 1, wherein said elongate annular electrode structure is located a constant distance between said outer surface of said common wall and said inner surface of said enclosing wall.
     
    3. The apparatus of any one of claims 1 or 2, wherein said elongate annular electrode structure comprises discharge points extending towards said outer surface of said common wall and said inner surface of said enclosing wall.
     
    4. The apparatus of claim 3, wherein a ratio of that number of said discharge points extending towards said outer surface of said common wall and that number of said discharge points extending towards said inner surface of said enclosing wall is proportional to a ratio of an area of said outer surface of said common wall and an area of said inner surface of said enclosing wall.
     


    Ansprüche

    1. Gasbehandlungsapparatur, mit:

    einer Gaswäscherkammer (20), die zum Aufnehmen eines darin zu reinigenden Abgasstroms betreibbar ist, der von einem Fertigungsprozeßwerkzeug kommt, um einen gereinigten Gasstrom bereitzustellen; und

    einer elektrostatischen Ausfällungskammer (60), die zum Aufnehmen des darin zu behandelnden gereinigten Gasstroms betreibbar ist, um einen behandelten Gasstrom bereitzustellen;

    wobei die elektrostatische Ausfällungskammer eine erste Kammer (60) definiert und die Gaswäscherkammer eine zweite Kammer (20) definiert, die erste Kammer so konfiguriert ist, dass sie die zweite Kammer konzentrisch umgibt, die erste Kammer und die zweite Kammer eine gemeinsame Wand (80) haben, und eine innere Oberfläche der gemeinsamen Wand eine äußere Wand der zweiten Kammer und eine äußere Oberfläche der gemeinsamen Wand eine innere Wand der ersten Kammer bildet;

    wobei die zweite Kammer (20) eine längliche Kammer umfaßt, die durch die innere Oberfläche der gemeinsamen Wand (80) definiert ist, und die erste Kammer (60) eine längliche ringförmige Kammer umfaßt, die durch die äußere Oberfläche der gemeinsamen Wand (80) und eine innere Oberfläche einer Umfangswand (90) gebildet ist;

    wobei die elektrostatische Ausfällungskammer eine längliche ringförmige Elektrodenstruktur (100) aufweist, die zwischen der äußeren Oberfläche der gemeinsamen Wand (80) und der inneren Oberfläche der Umfassungswand (90) gelegen ist, und Auslässe zum Auswerfen von Flüssigkeit zum Bilden eines umfangsmäßig strömenden Flüssigkeitsvorhangs entlang sowohl der äußeren Oberfläche der gemeinsamen Wand und der inneren Oberfläche der Umfassungswand aufweist;

    wobei die Gaswäscherkammer einen Kopftank aufweist, der mindestens teilweise die Gaswäscherkammer bildet und eine Siebplatte (40) aufweist, der Kopftank zum Bereitstellen einer konstanten Strömung einer aufgenommenen Flüssigkeit in die Gaswäscherkammer durch die Siebplatte (40) und Bilden des Flüssigkeitsvorhangs betreibbar ist, der entlang der äußeren Oberfläche der gemeinsamen Wand (80) herabströmt;

    und die Gaswäscherkammer einen Abgasstromeinlaß zum Aufnehmen des Abgasstroms und eine Leitung (70) zum Befördern des gereinigten Gasstroms zu einem Einlaß der elektrostatischen Ausfällungskammer aufweist, die entfernt von einer Aufhängestruktur für die längliche ringförmige Elektrodenstruktur angeordnet ist;

    wobei die elektrostatische Ausfällungskammer einen Auslaß für den behandelten Gasstrom zum Bereitstellen des behandelten Gasstroms aufweist, und der Abgasstromeinlaß und der Auslaß für den behandelten Gasstrom so positioniert sind, dass Gas entlang einer axialen Länge sowohl der Gaswäscherkammer als auch der elektrostatischen Ausfällungskammer strömt.


     
    2. Apparatur nach Anspruch 1, wobei die längliche ringförmige Elektronenstruktur mit einer konstanten Distanz zwischen der äußeren Oberfläche der gemeinsamen Wand und der inneren Oberfläche der Umfassungswand angeordnet ist.
     
    3. Apparatur nach einem der Ansprüche 1 oder 2, wobei die längliche ringförmige Elektrodenstruktur Entladungspunkte aufweist, die zur äußeren Oberfläche der gemeinsamen Wand und zur inneren Oberfläche der Umfassungswand vorspringen.
     
    4. Apparatur nach Anspruch 3, wobei ein Verhältnis derjenigen Anzahl der Entladungspunkte, die zur äußeren Oberfläche der gemeinsamen Wand vorspringen, und derjenigen Anzahl der Entladungspunkte, die zur inneren Oberfläche der Umfassungswand vorspringen, proportional zu einem Verhältnis einer Fläche der äußeren Oberfläche der gemeinsamen Wand und einer Fläche der inneren Oberfläche der Umfassungswand ist.
     


    Revendications

    1. Appareil de traitement de gaz, comprenant :

    une chambre de lavage de gaz (20) ayant pour fonction de recevoir un courant d'effluent gazeux provenant d'un outil de procédé de fabrication pour être lavé dans celle-ci afin de fournir un courant de gaz lavé ; et

    une chambre de précipitation électrostatique (60) ayant pour fonction de recevoir ledit courant de gaz lavé pour être traité dans celle-ci afin de fournir un courant de gaz traité, ladite chambre de précipitation électrostatique définissant une première chambre (60) et ladite chambre de lavage de gaz définissant une seconde chambre (20), ladite première chambre étant agencée pour entourer de manière concentrique ladite seconde chambre, dans lequel ladite première chambre et ladite seconde chambre partagent une paroi commune (80), une surface intérieure de ladite paroi commune définissant une paroi externe de ladite seconde chambre et une surface extérieure de ladite paroi commune définissant une paroi interne de ladite première chambre ; ladite seconde chambre (20) comprenant une chambre allongée définie par ladite surface intérieure de ladite paroi commune (80) et ladite première chambre (60) comprenant une chambre annulaire allongée définie par ladite surface extérieure de ladite paroi commune (80) et une surface intérieure d'une paroi enveloppante (90) ; dans lequel ladite chambre de précipitation électrostatique comprend une structure d'électrodes annulaire allongée (100) située entre ladite surface extérieure de ladite paroi commune (80) et ladite surface intérieure de ladite paroi enveloppante (90), et des sorties destinées à éjecter du liquide pour fournir un rideau liquide d'écoulement circonférentiel le long à la fois de ladite surface extérieure de ladite paroi commune et de ladite surface intérieure de ladite paroi enveloppante ; dans lequel ladite chambre de lavage de gaz comprend un réservoir collecteur définissant au moins partiellement ladite chambre de lavage de gaz et comprenant une plaque tamis (40), ledit réservoir collecteur ayant pour fonction de fournir à ladite chambre de lavage de gaz à travers ladite plaque tamis (40) un débit constant d'un liquide reçu et de fournir le rideau liquide qui coule vers le bas le long de la surface extérieure de la paroi commune (80) ; dans lequel ladite chambre de lavage de gaz comprend une entrée de courant d'effluent gazeux destinée à recevoir ledit courant d'effluent gazeux et un conduit (70) destiné à acheminer ledit courant de gaz lavé vers une entrée de ladite chambre de précipitation électrostatique située en éloignement d'une structure de suspension pour ladite structure d'électrodes annulaire allongée, ladite chambre de précipitation électrostatique comprenant une sortie de courant de gaz traité destinée à fournir du courant de gaz traité, ladite entrée de courant d'effluent gazeux et ladite sortie de courant de gaz traité étant positionnées pour occasionner la circulation des gaz le long d'une longueur axiale à la fois de ladite chambre de lavage de gaz et de ladite chambre de précipitation électrostatique.


     
    2. Appareil selon la revendication 1, dans lequel ladite structure d'électrodes annulaire allongée est située à une distance constante entre ladite surface extérieure de ladite paroi commune et ladite surface intérieure de ladite paroi enveloppante.
     
    3. Appareil selon l'une quelconque des revendications 1 ou 2, dans lequel ladite structure d'électrodes annulaire allongée comprend des points de décharge s'étendant vers ladite surface extérieure de ladite paroi commune et vers ladite surface intérieure de ladite paroi enveloppante.
     
    4. Appareil selon la revendication 3, dans lequel un rapport entre ce nombre desdits points de décharge s'étendant vers ladite surface extérieure de ladite paroi commune et ce nombre desdits points de décharge s'étendant vers ladite surface intérieure de ladite paroi enveloppante est proportionnel à un rapport entre une superficie de ladite surface extérieure de ladite paroi commune et une superficie de ladite surface intérieure de ladite paroi enveloppante.
     




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