(19)
(11)EP 3 170 203 B1

(12)EUROPEAN PATENT SPECIFICATION

(45)Mention of the grant of the patent:
06.05.2020 Bulletin 2020/19

(21)Application number: 15738688.9

(22)Date of filing:  18.07.2015
(51)Int. Cl.: 
H01L 25/075  (2006.01)
H01L 33/60  (2010.01)
H01L 33/58  (2010.01)
H01L 33/50  (2010.01)
H01L 33/46  (2010.01)
(86)International application number:
PCT/EP2015/066503
(87)International publication number:
WO 2016/009088 (21.01.2016 Gazette  2016/03)

(54)

LIGHT EMITTING DIODES AND REFLECTOR

LEUCHTDIODEN UND REFLEKTOR

DIODES ÉLECTROLUMINESCENTES ET RÉFLECTEUR


(84)Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

(30)Priority: 18.07.2014 EP 14177590

(43)Date of publication of application:
24.05.2017 Bulletin 2017/21

(73)Proprietor: Lumileds Holding B.V.
1118 CL Schiphol (NL)

(72)Inventors:
  • CROMPVOETS, Floris Maria Hermansz
    NL-5656 AE Eindhoven (NL)
  • SWEEGERS, Norbertus Antonius Maria
    NL-5656 AE Eindhoven (NL)
  • CORNELISSEN, Hugo Johan
    NL-5656 AE Eindhoven (NL)
  • DE SAMBER, Marc Andre
    NL-5656 AE Eindhoven (NL)

(74)Representative: ter Heegde, Paul Gerard Michel 
Lumileds Germany GmbH Philipsstraße 8
52068 Aachen
52068 Aachen (DE)


(56)References cited: : 
EP-A1- 2 216 834
DE-A1-102007 011 123
DE-A1-102012 214 219
EP-A2- 2 573 812
DE-A1-102012 110 774
US-A1- 2008 290 362
  
      
    Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).


    Description

    FIELD OF THE INVENTION



    [0001] This invention relates to a light source, and more particularly to a light source comprising a plurality of semiconductor light sources.

    BACKGROUND OF THE INVENTION



    [0002] Semiconductor light sources, such as light emitting diodes (LEDs), high power LEDs, organic LEDs (OLEDs) and laser diodes are known to be energy efficient and small light sources that can exhibit a small/low etendue (i.e. the product of emitting area with solid angle in which the light is emitted).

    [0003] Such semiconductor light sources may therefore be beneficial for applications where a bright light source is needed. Typical example applications include projection systems, automotive lighting, camera flashlights, and spot lights. For these examples, improved miniaturization is often desirable. However, merely reducing the size of a semiconductor light source reduces the generated light flux.

    [0004] It is known to obtain increased luminance from a semiconductor light source by means of a mix box with a small aperture (i.e. light output section) from which the light can escape. Figures 1A and 1B illustrate a known LED-based light source 10 employing this concept, wherein light generated by an LED 12 (on a die substrate 14) is recycled/reflected in a mix box 16 having high reflectivity until it escapes via a small aperture 18. By the aperture 18 being "small" it is simply meant as being smaller than the LED 12 such that the aperture area AA (i.e. width WA X LA) is less than the LED area ALED (i.e. width WLED X LLED) of the LED 12.

    [0005] EP 2 216 834 A1 discloses a light-emitting device and its manufacturing method. The light-emitting device comprises a first and a second semiconductor diode, a light output section at least partially overlapping both semiconductor diode structures, a layer of optical enhancement material and a light reflection structure enclosing the side surfaces of the first and semiconductor diode structures and the side surfaces of the layer of optical enhancement material.

    SUMMARY OF THE INVENTION



    [0006] The invention is defined by the claims.

    [0007] According to an aspect of the invention there is provided a light source comprising: first and second semiconductor diode structures adapted to generate light, the first and second semiconductor diode structures being laterally adjacent to each other; a light output section at least partially overlapping both of the first and second semiconductor diode structures and adapted to output light from the first and second semiconductor diode structures; and a light reflecting structure at least partially enclosing side surfaces of the first and second semiconductor diode structures and the light output section and adapted to reflect light from the semiconductor diode structures towards the light output section, wherein the area of the light output section is less than the combined area of the first and second semiconductor diode structures.

    [0008] Embodiments may achieve savings in materials and/or space by arranging light emitting semiconductor diode structures (such as LEDs) to be laterally adjacent and then sharing a single light output section between the adjacent diode structures. Thus, there is proposed a concept for forming a high luminance LED-based light source that has a light output section which is of lesser area than the light generating portions (e.g. semiconductor diode structures). By arranging such a light output section to at least partially overlap a plurality of light generating structures, the light output section can comprise a single component/structure (such as an aperture or an phosphorescent platelet, for example) that is shared across multiple light sources to provide savings/reductions in materials, size, device complexity, and/or manufacturing complexity.

    [0009] In other words, embodiments may provide a high-luminance light source comprising laterally arranged sub-sources that are overlapped by a common light output section. The position(s) and/or shape of the light output section can be changed or designed to enable tiling of the sub-sources such that edges of multiple light output sections can be closely aligned (when viewed from above, for example).

    [0010] Multiple LED light sources may therefore be strategically arranged in the horizontal axis so that they are overlapped by a single or common light output section. For example, pairs of closely positioned LED light sources may be aligned with each other to form a column-like array of pairs such that, when viewed from directly above (i.e. plan view), a single elongate light output section can at least partially overlap each pair of LED light sources in the array. By arranging multiple LED light sources to be overlapped by a common light output section, savings in material and/or space (e.g. a reduction in foot print size) may be achieved.

    [0011] The LED light sources of the present disclosure may be any type of LED, such as a Flip Chip type (Thin Film Flip Chip), Patterned Sapphire Substrate, top connected/top emission, top-bottom connected. Also, the light source could be used as naked die, or packaged.

    [0012] A light output section (or light emission area) of an LED light source refers to an area towards or through which light from the LED is output (or emitted). A cavity or cavities of a LED light source may thus extend towards the light output section. The light output section may for example be an area (volume) of the growing template (growth substrate), such as a sapphire. Light from the semiconductor structures may be emitted in various directions, thus resulting in some emitted light being incident on the light reflecting structure and reflected back towards the semiconductor structure(s). Light generated by the semiconductor structures may therefore be reflected by the light reflecting structure until it is directed through (and out of) the light output section. The arrangement of the light reflecting structure and the light output section may therefore be considered as forming a 'mix-box' structure which reflects light rays until they are output through the light output section. Accordingly the light output direction (from the light output section) may be generalized to be in a vertical direction (e.g. upwardly in the Figures) along which light is output from the light output section. However, it will be understood that not all light output from a light output section may be output exactly vertically. Thus, the light output direction should be understood to refer to the general upwardly extending direction that light may be output from a light output section, extending away from the surface of the light output section for example.

    [0013] The semiconductor diode structures may be arranged such that there is substantially zero separation between adjacent edges of the semiconductor diode structures. In practice, however, it may be difficult to perfectly align adjacent edges to have zero lateral separation. Thus, in embodiments, the semiconductor diode structures are laterally separated by a negligible or small amount. There is a lateral separation between the adjacent edges of the two semiconductor diode structures, and this lateral separation or overlap is less than 10% of the lateral width of the semiconductor diode structures. In embodiments, it may be preferable to reduce such separation to a minimum value (e.g. less than 5% of the lateral width of the semiconductor diode structures, and even more preferably less than 1% of the lateral width of the semiconductor diode structures). In an embodiment, the light output section may comprise an aperture formed in the light reflecting structure.

    [0014] The embodiments of the invention further comprise a layer of optical enhancement material below the light output section and at least partially overlapping both of the first and second semiconductor diode structures, wherein the light reflecting structure at least partially encloses side surfaces of the layer of optical enhancement material. In other words, an embodiment may further comprise a layer of optical enhancement material sandwiched between the top of the semiconductor light sources and the bottom of the light output section.

    [0015] Further, in embodiments, the light output section may comprise an optical enhancement material.

    [0016] Optical enhancement material may be a 'color conversion fill', such as a phosphorescent material. Examples may include a ceramic phosphor, a phosphor platelet, or a known phosphorescent material referred to as a "lumiramic" material. This may further help to maintain the etendue of the lateral emission area and/or change the color of the emitted light.

    [0017] Further, if an embodiment comprises a plurality of light output sections, some or all of the light output sections may comprise (e.g. be filled) with different materials. As an example, certain light output sections may be filled with a first type of phosphor (e.g. converting blue to white) and others may be filled with another type of phosphor (e.g. converting blue to red).

    [0018] Embodiments may be employed in the field of automotive lighting and other fields/applications where high-luminance lighting is desirable.

    [0019] Thus, according to an aspect of the invention, there may be provided an automotive light comprising a light source according to an embodiment.

    [0020] According to another aspect of the invention, there may be provided a projector light comprising a light source according to an embodiment.

    [0021] According to yet another aspect of the invention, there is provided a method of manufacturing a light source comprising: arranging first and second semiconductor diode structures adapted to generate light to be laterally adjacent to each other; providing a light output section at least partially overlapping both of the first and second semiconductor diode structures, the light output section being adapted to output light from the first and second semiconductor diode structures; and at least partially enclosing sides surfaces of the first and second semiconductor diode structures and the light output section with a light reflecting structure, the light reflecting structure being adapted to reflect light from the semiconductor diode structures towards the light output section, wherein the area of the light output section is less than the combined area of the first and second semiconductor diode structures.

    [0022] The step of arranging may comprise arranging the first and second semiconductor diode structures such that there is a lateral separation between the adjacent edges of the first and second semiconductor diode structures, the lateral separation being less than 10% of the lateral width of the first and second semiconductor diode structures.

    [0023] The light output section may comprise an aperture formed in the light reflecting structure.

    [0024] Embodiments may further comprise forming a layer of optical enhancement material below the light output section and at least partially overlapping both of the first and second semiconductor diode structures, wherein the step of at least partially enclosing sides surfaces of the first and second semiconductor diode structures and the light output section with a light reflecting structure light reflecting structure further comprise at least partially enclosing side surfaces of the layer of optical enhancement material with the light reflecting structure light reflecting structure.

    [0025] In an embodiment, the light output section may comprise an optical enhancement material.

    BRIEF DESCRIPTION OF THE DRAWINGS



    [0026] Examples of the invention will now be described in detail with reference to the accompanying drawings, in which:

    Fig. 1A is a cross-sectional view of a known LED light source;

    Fig. 1B is a plan view of the known LED light source of Figure 1A;

    Fig. 2A is a plan view of a light source according to an example not forming part of the invention;

    Fig. 2B is a cross-sectional view of the example of Fig. 2A (taken along the line X-X of Fig. 2A);

    Fig. 3A is a plan view of a light source according to another example not forming part of the invention;

    Fig. 3B is a cross-sectional view of the example of Fig. 3A (taken along the line X-X of Fig. 3A);

    Fig. 4A is a plan view of a light source according to another embodiment;

    Fig. 4B is a cross-sectional view of the embodiment of Fig. 4A (taken along the line X-X of Fig. 4A);

    Fig. 5 illustrates a modification to the embodiment of Figs. 4A and 4B; and

    Fig. 6 illustrates a modification to the example of Figs. 2A and 2B.


    DETAILED DESCRIPTION OF THE EMBODIMENTS



    [0027] The invention provides a light source comprising a plurality of LED light sources and a method for manufacturing the same. Embodiments may be of particular relevance to applications that require light of high or increased luminance from a relatively small and/or efficient light source.

    [0028] Embodiments employ the concept of arranging light emitting semiconductor diode structures (such as LEDs) to be laterally adjacent and then providing a single light output section (of reduced size compared to the aligned diode structures) overlapping the adjacent diode structures. In this way, a common light output section may be employed or shared across multiple LED light sources to provide savings or reductions in materials and/or manufacturing complexity.

    [0029] The term vertical, as used herein, means substantially orthogonal to the surface of a substrate. The terms lateral or horizontal, as used herein, means substantially parallel to the surface of a substrate. Also, terms describing positioning or locations (such as above, below, top, bottom, etc.) are to be construed in conjunction with the orientation of the structures illustrated in the diagrams.

    [0030] The diagrams are purely schematic and it should therefore be understood that the dimensions of features are not drawn to scale. Accordingly, the illustrated thickness and/or separation of any of the layers should not be taken as limiting. For example, a first layer drawn as being thicker than a second layer may, in practice, be thinner than the second layer.

    [0031] Referring to Figure 2, there is depicted a light source according to an example not forming part of the invention. More specifically, Figure 2A is a plan view of the light source, and Figure 2B is a cross-sectional view of the light source (taken along the line X-X of Figure 2A).

    [0032] The light source comprises a plurality of LEDs 12 positioned on the upper surface of a substrate 20. Here, the plurality of LEDs 12 are arranged in a 2x4 array comprising two columns of LEDs 12, each column having four rows of LEDs 12. Thus, it will be appreciated that the depicted arrangement of LEDs 12 may be described as comprising four pairs 121, 122, 123, 124 of closely-positioned LED light sources 12 which are aligned in a column to form a column-like array of pairs. Being positioned on the flat upper surface of the substrate, the LEDs 12 can be described as being laterally adjacent to each other since they all lie in the same horizontal plane.

    [0033] A light output section 18 is provided on top of the LEDs 12 such that it partially overlaps the top/upper surface of each LED 12. The light output section 18 is adapted to output light from the LEDs 12. Here, the light output section 18 comprises an optical enhancement material such as phosphorescent material or a lumiramic.

    [0034] Accordingly, when viewed from directly above (i.e. in plan view as depicted in Figure 2A), a single elongate light output section 18 partially overlaps each pair of LEDs 12 in the 2x4 array. A single, common light output section 18 partially overlaps all of the LEDs.

    [0035] A light reflecting structure 16 encloses the side surfaces of the LEDs 12 and the light output section 18, and also encloses the LED top/upper surfaces that are not covered by the light output section 18. Thus, the light reflecting structure 16 covers the LEDs 12 and light output section 18 such that only the top/upper surface of the light output section 18 is exposed (i.e. is not covered by the light reflecting structure 16). The light reflecting structure 16 comprises a highly reflective material that reflects light from LEDs 12 towards the light output section 18. The light reflecting structure 16 may therefore be considered as forming a light mix box from which light can only escape via the light output section 18.

    [0036] Because the area of the light output section 18 is less than the total area of the LEDs, the embodiment employs the concept of having a light output section 18 which is smaller than the LEDs 12 it is adapted to output light from. This enables increased luminance from the LEDs 12 to be obtained. Furthermore, the use of a single light output section 18 partially overlapping multiple light generating structures (e.g. LEDs 12) enables a single component or structure to be employed and shared across multiple light sources. A reduction in device complexity and required materials can therefore be obtained.

    [0037] Referring to Figure 3, there is depicted a light source according to another example not forming part of the invention. More specifically, Figure 3A is a plan view of the light source, and Figure 3B is a cross-sectional view of the light source (taken along the line X-X of Figure 3A).

    [0038] The example of Figure 3 is very similar to the example of Figure 2. Detailed description of all of the same or similar technical features will be omitted so as to avoid unnecessary repetition. Instead, it is noted that the example of Figure 3 only differs from that of Figure 2 in that four light output sections 181, 182, 183, 184 are employed. Each light output section 18 is arranged to partially overlap a respective pair of LEDs. Thus, a first light output section 181 partially overlaps a first pair 121 of LEDs, a second light output section 182 partially overlaps a second pair 122 of LEDs, a third light output section 183 partially overlaps a third pair 123 of LEDs, and a fourth light output section 184 partially overlaps a fourth pair 124 of LEDs. It will therefore be appreciated that each light output section 18 is arranged to partially overlap two LEDs.

    [0039] As with the example of Figure 2, the area of a light output section 18 is less than the total area of the LEDs it partially covers, thus employing the concept of having a light output section 18 which is smaller than the LEDs 12 it is adapted to output light from. This enables increased luminance from the LEDs 12 to be obtained. Furthermore, the use of a single light output section 18 partially overlapping two light generating structures (e.g. LEDs 12) enables a reduction in materials and complexity whist providing for light of increased luminance from the light source. It may also enable a similar layout of light outputting areas as current devices, which can assist implementation in existing products.

    [0040] Referring to Figure 4, there is depicted a light source according to an embodiment of the invention. More specifically, Figure 4A is a plan view of the light source, and Figure 4B is a cross-sectional view of the light source (taken along the line X-X of Figure 4A).

    [0041] The embodiment of Figure 4 is similar to the example of Figure 2. Detailed description of all of the same or similar technical features will be omitted so as to avoid unnecessary repetition. Instead, it is noted that the embodiment of Figure 4 differs from that of Figure 2 in that the single light output section 18 now comprises an aperture 18 (formed in the light reflecting structure 16). As with the example of Figure 2, the light output section 18 (i.e. aperture18) of the embodiment of Figure 4 is situated above the LEDs 12 such that it partially overlaps each LED 12. Further, the shape and size of the light output section 18 of Figure 4 is very similar to that of Figure 2. Thus, the area of the light output section 18 is less than the total area of the LEDs it overlaps, thereby employing the concept of having a light output section 18 which is smaller than the LEDs 12 it is adapted to output light from.

    [0042] Also, there is provided a layer 22 of optical enhancement material below the light output section 18 and overlapping all of the LEDs 12. Here, the light output optical enhancement material comprises a lumiramic or phosphorescent material which is adapted to convert the color of light emitted by the LEDs.

    [0043] The light reflecting structure 16 covers the side surfaces of the layer 22 of optical enhancement material as well as a portion of the upper surface of the layer 22 of optical enhancement material. In other words, the light reflecting structure 16 covers the LEDs 12 and layer 22 of optical enhancement material such that only the top/upper surface of layer 22 of optical enhancement material is exposed (i.e. uncovered) by the light output section 18.

    [0044] Hence, it will be appreciated the Figure 4 illustrates an embodiment wherein the light output section 18 comprises an aperture or cavity. The layer 22 of optical enhancement material is provided in this embodiment to alter the color of light emitted by the LEDs 12.

    [0045] Alternatively, the embodiment of Figure 4 may be modified by replacing the aperture 18 of Figure 4 with optical enhancement material (such as lumiramic or phosphorescent material, for example). Such a modification to the embodiment of Figure 4 is depicted in Figure 5, wherein the light output section comprises first 24A and second 24B portions of phosphorescent material. The first 24A and second 24B portions of phosphorescent material may provide for the alteration of output light to different colors, for example.

    [0046] It is noted that, in practice, the light reflecting structure 16 may not be entirely reflecting. In other words, the light reflecting structure may not have substantially 100% reflectivity, and so some light may leak through it. This increases the size of the light outputting area and hence reduces luminance. This may introduce color over position effects (e.g. a blue halo around white light in the center). To address this, embodiments may be made "light leak tight" by blocking the light with an opaque/reflective coating. Such a modification to the example of Figure 2 is depicted in Figure 6, wherein a reflective coating 30 is provided on the upper surface of the light reflecting structure 16. This helps to lower the overall light transmittance of the light reflecting structure 16 by reflecting light that is incident on the lower surface of the reflective coating 30 from below (e.g. light leaking through the light reflecting structure 16).


    Claims

    1. A light source comprising:

    first and second semiconductor diode structures (12) adapted to generate light, the first and second semiconductor diode structures being laterally adjacent to each other;

    a light output section (18) at least partially overlapping both of the first and second semiconductor diode structures and adapted to output light from the first and second semiconductor diode structures;

    a layer of optical enhancement material (22) below the light output section and at least partially overlapping both of the first and second semiconductor diode structures, and

    a light reflecting structure (16) at least partially enclosing side surfaces of the first and second semiconductor diode structures and side surfaces as well as a portion of the upper surface of the layer of optical enhancement material and adapted to reflect light from the semiconductor diode structures towards the light output section,

    wherein the light reflecting structure encloses the light output section,

    wherein the area of the light output section is less than the combined area of the first and second semiconductor diode structures and less than the area of the layer of optical enhancement material,

    and wherein there is a lateral separation between the adjacent edges of the first and second semiconductor diode structures, the lateral separation being less than 10% of the lateral width of the first and second semiconductor diode structures.


     
    2. The light source of claim 1, wherein the light output section comprises an aperture formed in the light reflecting structure.
     
    3. The light source of claim 1, wherein the optical enhancement material covers the combined area of the first and second semiconductor structures.
     
    4. The light source of claim 2, wherein the aperture of the light output section comprises no optical enhancement material.
     
    5. The light source of any preceding claim, wherein at least one of the first and second semiconductor diode structures comprises a pre-structured sapphire LED.
     
    6. The light source of any preceding claim, further comprising a reflective coating at least partially overlapping the light reflecting structure.
     
    7. An automotive light comprising a light source according to any preceding claim.
     
    8. A projector light comprising a light source according to any of claims 1 to 6.
     
    9. A method of manufacturing a light source comprising:

    arranging first and second semiconductor diode structures (12) adapted to generate light to be laterally adjacent to each other;

    providing a light output section (18) at least partially overlapping both of the first and second semiconductor diode structures, the light output section being adapted to output light from the first and second semiconductor diode structures;

    forming a layer of optical enhancement material (22) below the light output section and at least partially overlapping both of the first and second semiconductor diode structures, and

    at least partially enclosing sides surfaces of the first and second semiconductor diode structures and the side surfaces as well as a portion of the upper surface of the layer of optical enhancement material with a light reflecting structure (16), the light reflecting structure being adapted to reflect light from the semiconductor diode structures towards the light output section,

    wherein the light reflecting structure encloses the light output section,

    wherein the area of the light output section is less than the combined area of the first and second semiconductor diode structures and less than the area of the layer of optical enhancement material,

    and wherein the step of arranging comprises arranging the first and second semiconductor diode structures such that there is a lateral separation between the adjacent edges of the first and second semiconductor diode structures, the lateral separation being less than 10% of the lateral width of the first and second semiconductor diode structures.


     
    10. The method of claim 9, wherein the light output section comprises an aperture formed in the light reflecting structure.
     
    11. The method of claim 9, wherein forming a layer of optical enhancement material includes covering the the combined area of the first and second semiconductor structures.
     
    12. The method of claim 10, wherein the aperture of the light output section comprises no optical enhancement material.
     


    Ansprüche

    1. Lichtquelle, umfassend:

    erste und zweite Halbleiterdiodenstrukturen (12), die zum Erzeugen von Licht ausgelegt sind, wobei die ersten und zweiten Halbleiterdiodenstruktur lateral benachbart zueinander sind;

    einen Lichtausgabeabschnitt (18), der sowohl die ersten als auch zweiten Halbleiterdiodenstrukturen wenigstens teilweise überlappt und zum Ausgeben von Licht von den ersten und zweiten Halbleiterdiodenstrukturen ausgelegt ist;

    eine Schicht aus optischem Verbesserungsmaterial (22) unter dem Lichtausgabeabschnitt, die sowohl die ersten als auch zweiten Halbleiterdiodenstrukturen wenigstens teilweise überlappt; und

    eine Licht reflektierende Struktur (16), die Seitenflächen der ersten und zweiten Halbleiterdiodenstrukturen und Seitenflächen sowie einen Teil der Oberseite der Schicht aus optischem Verbesserungsmaterial wenigstens teilweise umschließt und zum Reflektieren von Licht von den Halbleiterdiodenstrukturen in Richtung des Lichtausgabeabschnitts ausgelegt ist,

    wobei die Licht reflektierende Struktur den Lichtausgabeabschnitt umschließt,

    wobei der Bereich des Lichtausgabeabschnitts kleiner als der kombinierte Bereich der ersten und zweiten Halbleiterdiodenstrukturen und kleiner als der Bereich der Schicht aus optischem Verbesserungsmaterial ist;

    und wobei eine laterale Trennung zwischen den benachbarten Kanten der ersten und zweiten Halbleiterdiodenstrukturen vorhanden ist, wobei die laterale Trennung weniger als 10 % der lateralen Breite der ersten und zweiten Halbleiterdiodenstrukturen beträgt.


     
    2. Lichtquelle nach Anspruch 1, wobei der Lichtausgabeabschnitt eine Öffnung umfasst, die in der Licht reflektierenden Struktur ausgebildet ist.
     
    3. Lichtquelle nach Anspruch 1, wobei das optische Verbesserungsmaterial den kombinierten Bereich der ersten und zweiten Halbleiterdiodenstrukturen bedeckt.
     
    4. Lichtquelle nach Anspruch 2, wobei die Öffnung der Licht reflektierenden Struktur kein optisches Verbesserungsmaterial umfasst.
     
    5. Lichtquelle nach einem der vorhergehenden Ansprüche, wobei mindestens eine der ersten und zweiten Halbleiterdiodenstrukturen eine vorstrukturierte Saphir-LED umfasst.
     
    6. Lichtquelle nach einem der vorhergehenden Ansprüche, ferner umfassend eine reflektierende Beschichtung, welche die Licht reflektierende Schicht wenigstens teilweise überlappt.
     
    7. Kraftfahrzeugleuchte, umfassend eine Lichtquelle nach einem der vorhergehenden Ansprüche.
     
    8. Projektorleuchte, umfassend eine Lichtquelle nach einem der Ansprüche 1 bis 6.
     
    9. Verfahren zur Herstellung einer Lichtquelle, umfassend:

    derartiges Anordnen erster und zweiter Halbleiterdiodenstrukturen (12), die zum Erzeugen von Licht ausgelegt sind, dass sie lateral benachbart zueinander sind;

    Bereitstellen eines Lichtausgabeabschnitts (18), der sowohl die ersten als auch zweiten Halbleiterdiodenstrukturen wenigstens teilweise überlappt, wobei der Lichtausgabeabschnitt zum Ausgeben von Licht von den ersten und zweiten Halbleiterdiodenstrukturen ausgelegt ist;

    Bilden einer Schicht aus optischem Verbesserungsmaterial (22) unter dem Lichtausgabeabschnitt, die sowohl die ersten als auch zweiten Halbleiterdiodenstruktur wenigstens teilweise überlappt; und

    wenigstens teilweises Umschließen von Seitenflächen der ersten und zweiten Halbleiterdiodenstrukturen und der Seitenflächen sowie eines Teils der Oberseite der Schicht aus optischem Verbesserungsmaterial mit einer Licht reflektierenden Struktur (16), wobei die Licht reflektierende Struktur zum Reflektieren von Licht von den Halbleiterdiodenstrukturen in Richtung des Lichtausgabeabschnitts ausgelegt ist,

    wobei die Licht reflektierende Struktur den Lichtausgabeabschnitt umschließt,

    wobei der Bereich des Lichtausgabeabschnitts kleiner als der kombinierte Bereich der ersten und zweiten Halbleiterdiodenstrukturen und kleiner als der Bereich der Schicht aus optischem Verbesserungsmaterial ist;

    und wobei der Schritt des Anordnens ein derartiges Anordnen der ersten und zweiten Halbleiterdiodenstrukturen umfasst, dass eine laterale Trennung zwischen den benachbarten Kanten der ersten und zweiten Halbleiterdiodenstrukturen vorhanden ist, wobei die laterale Trennung weniger als 10 % der lateralen Breite der ersten und zweiten Halbleiterdiodenstrukturen beträgt.


     
    10. Verfahren nach Anspruch 9, wobei der Lichtausgabeabschnitt eine Öffnung aufweist, die in der Licht reflektierenden Struktur ausgebildet ist.
     
    11. Verfahren nach Anspruch 9, wobei das Bilden einer Schicht aus optischem Verbesserungsmaterial ein Bedecken des kombinierten Bereichs der ersten und zweiten Halbleiterdiodenstrukturen umfasst.
     
    12. Verfahren nach Anspruch 10, wobei die Öffnung der Licht reflektierenden Struktur kein optisches Verbesserungsmaterial umfasst.
     


    Revendications

    1. Source de lumière comprenant :

    des première et deuxième structures de diode à semi-conducteurs (12) conçues pour générer de la lumière, les première et deuxième structures de diode à semi-conducteurs étant latéralement adjacentes l'une à l'autre ;

    une section de sortie de lumière (18) recouvrant au moins partiellement les deux première et deuxième structures de diode à semi-conducteurs et conçue pour sortir la lumière des première et deuxième structures de diode à semi-conducteurs ;

    une couche de matériau d'enrichissement optique (22) au-dessous de la section de sortie de lumière et recouvrant au moins partiellement les deux première et deuxième structures de diode à semi-conducteurs, et

    une structure réfléchissant la lumière (16) enfermant au moins partiellement les surfaces latérales des première et deuxième structures de diode à semi-conducteurs et les surfaces latérales ainsi qu'une partie de la surface supérieure de la couche de matériau d'enrichissement optique et conçue pour réfléchir la lumière des structures de diode à semi-conducteurs vers la section de sortie de lumière,

    dans laquelle la structure réfléchissant la lumière enferme la section de sortie de lumière,

    dans laquelle l'aire de la section de sortie de lumière est inférieure à l'aire combinée des première et deuxième structures de diode à semi-conducteurs et inférieure à l'aire de la couche de matériau d'enrichissement optique, et

    dans laquelle il y a une séparation latérale entre les bords adjacents des première et deuxième structures de diode à semi-conducteurs, la séparation latérale étant inférieure à 10 % de la largeur latérale des première et deuxième structures de diode à semi-conducteurs.


     
    2. Source de lumière selon la revendication 1, dans laquelle la section de sortie de lumière comprend une ouverture formée dans la structure réfléchissant la lumière.
     
    3. Source de lumière selon la revendication 1, dans laquelle le matériau d'enrichissement optique recouvre l'aire combinée des première et deuxième structures de diode à semi-conducteurs.
     
    4. Source de lumière selon la revendication 2, dans laquelle l'ouverture de la section de sortie de lumière ne comprend pas de matériau d'enrichissement optique.
     
    5. Source de lumière selon l'une quelconque des revendications précédentes, dans laquelle au moins l'une des première et deuxième structures de diode à semi-conducteurs comprend une DEL au saphir préstructurée.
     
    6. Source de lumière selon l'une quelconque des revendications précédentes, comprenant en outre un revêtement réfléchissant recouvrant au moins partiellement la structure réfléchissant la lumière.
     
    7. Feu d'automobile comprenant une source de lumière selon l'une quelconque des revendications précédentes.
     
    8. Lumière de projecteur comprenant une source de lumière selon l'une quelconque des revendications 1 à 6.
     
    9. Procédé de fabrication d'une source de lumière comprenant :

    l'agencement de première et deuxième structures de diode à semi-conducteurs (12) conçues pour générer de la lumière de manière à ce qu'elles soient latéralement adjacentes l'une à l'autre ;

    la prévision d'une section de sortie de lumière (18) recouvrant au moins partiellement les deux première et deuxième structures de diode à semi-conducteurs, la section de sortie de lumière étant conçue pour sortir la lumière des première et deuxième structures de diode à semi-conducteurs ;

    la formation d'une couche de matériau d'enrichissement optique (22) au-dessous de la section de sortie de lumière et recouvrant au moins partiellement les deux première et deuxième structures de diode à semi-conducteurs, et

    l'enfermement au moins partiellement des surfaces latérales des première et deuxième structures de diode à semi-conducteurs et des surfaces latérales ainsi que d'une partie de la surface supérieure de la couche de matériau d'enrichissement optique avec une structure réfléchissant la lumière (16),

    la structure réfléchissant la lumière étant conçue pour réfléchir la lumière des structures de diode à semi-conducteurs vers la section de sortie de lumière,

    dans lequel la structure réfléchissant la lumière enferme la section de sortie de lumière,

    dans lequel l'aire de la section de sortie de lumière est inférieure à l'aire combinée des première et deuxième structures de diode à semi-conducteurs et inférieure à l'aire de la couche de matériau d'enrichissement optique, et

    dans lequel l'étape d'agencement comprend l'agencement des première et deuxième structures de diode à semi-conducteurs de sorte qu'il y ait une séparation latérale entre les bords adjacents des première et deuxième structures de diode à semi-conducteurs, la séparation latérale étant inférieure à 10 % de la largeur latérale des première et deuxième structures de diode à semi-conducteurs.


     
    10. Procédé selon la revendication 9, dans lequel la section de sortie de lumière comprend une ouverture formée dans la structure réfléchissant la lumière.
     
    11. Procédé selon la revendication 9, dans lequel la formation d'une couche de matériau d'enrichissement optique comprend le recouvrement de l'aire combinée des première et deuxième structures de diode à semi-conducteurs.
     
    12. Procédé selon la revendication 10, dans lequel l'ouverture de la section de sortie de lumière ne comprend pas de matériau d'enrichissement optique.
     




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    REFERENCES CITED IN THE DESCRIPTION



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    Patent documents cited in the description