(19)
(11)EP 3 343 551 B1

(12)EUROPEAN PATENT SPECIFICATION

(45)Mention of the grant of the patent:
12.01.2022 Bulletin 2022/02

(21)Application number: 17201813.7

(22)Date of filing:  15.11.2017
(51)International Patent Classification (IPC): 
G09G 3/32(2016.01)
G06F 3/14(2006.01)
(52)Cooperative Patent Classification (CPC):
G09G 3/32; G09G 2320/0233; G06F 3/1446; H01L 25/0753; G09G 2300/0426; G09G 2300/0408; G09G 2300/026; Y02E 10/549

(54)

LIGHT EMITTING DIODE DISPLAY DEVICE AND MULTI-SCREEN DISPLAY DEVICE USING THE SAME

LEUCHTDIODENANZEIGEVORRICHTUNG UND MEHRFACHBILDSCHIRMANZEIGEVORRICHTUNG DAMIT

DISPOSITIF D'AFFICHAGE À DIODE ÉLECTROLUMINESCENTE ET DISPOSITIF D'AFFICHAGE À ÉCRANS MULTIPLES L'UTILISANT


(84)Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

(30)Priority: 30.12.2016 KR 20160184458

(43)Date of publication of application:
04.07.2018 Bulletin 2018/27

(73)Proprietor: LG Display Co., Ltd.
Seoul 07336 (KR)

(72)Inventors:
  • SON, HyeonHo
    10845 Gyeonggi-do (KR)
  • JEONG, WooNam
    10845 Gyeonggi-do (KR)
  • LEE, SeungChul
    10845 Gyeonggi-do (KR)
  • LEE, BuYeol
    10845 Gyeonggi-do (KR)

(74)Representative: Viering, Jentschura & Partner mbB Patent- und Rechtsanwälte 
Am Brauhaus 8
01099 Dresden
01099 Dresden (DE)


(56)References cited: : 
EP-A2- 2 330 627
GB-A- 2 531 558
US-A1- 2004 208 210
US-A1- 2012 236 509
US-A1- 2016 179 453
CN-A- 105 742 451
US-A- 5 880 705
US-A1- 2005 020 175
US-A1- 2014 159 067
US-A1- 2016 372 514
  
      
    Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).


    Description

    BACKGROUND


    Technical Field



    [0001] The present disclosure relates to a light emitting diode display device.

    Description of the Related Art



    [0002] Display devices are being widely used as a display screen of notebook computers, tablet computers, smartphones, portable display devices, and portable information devices in addition to a display screen of television (TVs) and monitors.

    [0003] LCD devices and organic light emitting display devices display an image by using thin film transistors (TFTs) as switching elements. Since the LCD devices cannot self-emit light, the LCD devices display an image by using light emitted from a backlight unit which is disposed under a liquid crystal display panel. Since the LCD devices include a backlight unit, a design of the LCD devices is limited, and luminance and a response time are reduced. Since the organic light emitting display devices include an organic material, the organic light emitting display devices are vulnerable to water, causing a reduction in reliability and lifetime.

    [0004] Recently, research and development on light emitting diode display devices including a micro light emitting device are being done. The light emitting diode display devices have high image quality and high reliability, and thus, are attracting much attention as next-generation display devices.

    [0005] A related art light emitting diode display device is manufactured by transferring a micro light emitting device onto a thin film transistor (TFT) array substrate, and due to a transfer process time taken in a transfer process for the micro light emitting device, current transfer technology is more advantageous to display devices having a relatively large size than panels having a relatively small size.

    [0006] However, in the related art light emitting diode display device, a pad part for applying signals is provided in an edge of the TFT array substrate, and due to an instrument for covering the pad part, a bezel area increases.

    [0007] Moreover, in a case where the related art light emitting diode display device is manufactured to have a large size, the number of pixels increases, and for this reason, a transfer error rate of a micro light emitting device increases, causing a reduction in productivity. In order to solve such a problem, research and development are being recently done on multi-screen devices which realize a large-size screen and are implemented by connecting two or more light emitting diode display devices having a relatively small size. However, in the multi-screen devices, due to a bezel area of each of the two or more light emitting diode display devices, a seam (or a boundary portion) exists between display devices coupled to each other. When displaying one image on a whole screen, the boundary portion causes a sense of discontinuity of the whole screen, causing a reduction in degree of viewing immersion of a user.

    [0008] US 2012/236 509 A1 discloses a display being composed of a plurality of display modules, called "chixels" having a similar area. Each chixel may be formed by an (e.g. 4x4) array of RGB pixels, i.e. each pixel being composed of three subpixels arranged on a rigid substrate.

    [0009] EP 2 330 627 A2 discloses a tiled display structure on a single substrate. Driving lines are disposed on a front side layer of the tile and routing lines are disposed on a rear surface of the tile and connected to the driving lines through vias. A driver circuitry IC is attached on the rear side of the tile and connected to the routing lines.

    [0010] US 2005/020 175 A1 discloses a method for manufacturing a large-screen OLED display unit being composed of a plurality of device substrates aligned on the same plane and covered by a sealing substrate. On the device substrates at least three organic light emitting devices are disposed corresponding to subpixels forming a pixel.

    [0011] GB 2 531 558 A discloses a display including a plurality of microdisplay tiles, wherein each microdisplay tile consists of a 4x4 array of bottom emitting ILED devices grown on a common substrate of the microdisplay tile. Each ILED device may be a single or a three way cluster device, i.e. each pixel is composed of three subpixels.

    [0012] US 2016/372 514 A1 discloses an LED display, which is composed of a plurality of pixel units arranged in a matrix, wherein each pixel unit is composed of three sub-pixels arranged in a row adjacent to each other on an active device array substrate.

    [0013] US 2004/208 210 A1 discloses a light emitting apparatus package including a ceramic substrate. The ceramic substrate including a first concave section and a second concave section formed within the first concave section. On the bottom of the second concave section three light emitting devices are deposited.

    [0014] US 5 880 705 A discloses EL display tiles each composed of a plurality of EL cells, wherein each EL cell positioned at the periphery of a display tile occupies an area smaller or equal to that of an EL cell positioned in the center of the display tile.

    [0015] WO 2011/082497 A1 discloses a package for light emitting and receiving devices, which includes a substrate for supporting the lighting devices, a plurality of conductive traces defined on the substrate, and a planarization or encapsulation layer applied on the substrate.

    [0016] US 2014/159067 A1 discloses a display panel which includes a thin film transistor substrate having a pixel area and a non-pixel area. The pixel area includes an array of bank openings and an array of bottom electrodes within the bank openings. An array of LED Devices is bonded to the corresponding array of bottom electrodes.

    [0017] CN 105 742 451 A discloses a LED surface light source. The LED surface light source includes a LED chip of a vertical structure and an enveloping layer, wherein the LED chip along the vertical direction is provided with a first and second electrode. The enveloping layer covers the LED chip, and the first and second electrodes are separately exposed out of the enveloping layer.

    [0018] US 2016/179453 A1 discloses a display panel that includes a carrier substrate, a system interconnect, and a plurality of display modules disposed across the carrier substrate.

    BRIEF SUMMARY



    [0019] Accordingly, the present invention is directed to provide a light emitting diode display device that substantially obviate one or more problems due to limitations and disadvantages of the related art.

    [0020] The present invention is directed to provide a light emitting diode display device, which includes a minimized bezel area.

    [0021] Additional advantages and features of the present invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the disclosure. The objectives and other advantages of the present invention may be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.

    [0022] To achieve these and other advantages and in accordance with the purpose of the present invention, as embodied and broadly described herein, the present invention provides a light emitting diode display device including the features according to claim 1. Additional features for advantageous embodiments of the present invention are provided in the dependent claims.

    [0023] In an informative unclaimed example useful for understanding the present invention, there is provided a multi-screen display device including a plurality of screen modules each including a light emitting diode display device and a plurality of module coupling members coupling side surfaces of the plurality of screen modules, wherein the light emitting diode display device including a substrate including a first display area and a second display area surrounding the first display area, a plurality of first unit pixels provided in the first display area and each including a plurality of subpixels each including a micro light emitting device, and a plurality of second unit pixels provided in the second display area overlapping an edge of the substrate and each including a plurality of subpixels and having a size less than a size of each of the plurality of first unit pixels.

    [0024] A maximum distance between second unit pixels of two screen modules which are adjacent to each other with one of the plurality of module coupling members therebetween may be equal to or less than a reference pixel pitch of a first unit pixel, and the reference pixel pitch may be a distance between center portions of two adjacent first unit pixels.

    [0025] In an informative unclaimed example useful for understanding the invention, the light emitting diode display device further comprises a display driving circuit which comprises: a plurality of pixel driving lines on the substrate, the plurality of pixel driving lines including a plurality of gate lines and a plurality of data lines defining a plurality of subpixel areas; a plurality of routing lines on a side surface of the substrate and a rear surface of the substrate, the plurality of routing lines being connected to the plurality of pixel driving lines; a pad part including a pad provided on each of the plurality of routing lines; and a driving circuit connected to the pad part.

    [0026] In an informative unclaimed example useful for understanding the invention, the substrate comprises a plurality of grooves, provided concavely from the side surface of the substrate, and a plurality of protrusions between the plurality of grooves, the plurality of protrusions overlapping ends of the plurality of pixel driving lines, and the plurality of routing lines each comprise: a side routing pattern electrically connected to the end of each of the plurality of pixel driving lines, the side routing pattern on a portion of each of the plurality of protrusions; and a rear routing pattern provided on the rear surface of the substrate and electrically connected to the side routing pattern and the pad part.

    [0027] In an informative unclaimed example useful for understanding the invention, the display driving circuit is disposed on the rear surface of the substrate.

    [0028] In an informative unclaimed example useful for understanding the invention a multi-screen display device is provided, comprising: a plurality of screen modules; and a plurality of module coupling members coupling side surfaces of the plurality of screen modules, wherein the plurality of screen modules each comprise the light emitting diode display device according to one or more embodiments described herein.

    [0029] In an informative unclaimed example useful for understanding the invention, a maximum distance between second unit pixels of two screen modules which are adjacent to each other with one of the plurality of module coupling members between each other is equal to or less than a reference pixel pitch of a first unit pixel, the reference pixel pitch being a distance between center portions of two adjacent first unit pixels.

    [0030] In an informative unclaimed example useful for understanding the invention, the plurality of module coupling members each comprise an adhesive or a double-sided tape.

    [0031] It is to be understood that both the foregoing general description and the following detailed description of the present disclosure are exemplary and explanatory and are intended to provide further explanation of the disclosure as claimed.

    BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS



    [0032] The accompanying drawings, which are included to provide a further understanding of the disclosure and are incorporated in and constitute a part of this application, illustrate embodiments of the present invention and informative unclaimed examples useful for understanding the present invention and together with the description serve to explain the principle of the disclosure. In the drawings:

    FIG. 1 is a plan view of a light emitting diode display device in which the present invention may be incorporated;

    FIG. 2 is a plan view illustrating a rear surface of a substrate illustrated in FIG. 1;

    FIG. 3 is a diagram for describing a configuration of a unit pixel of a light emitting diode display device illustrated in FIG. 1;

    FIG. 4 is a cross-sectional view for describing a structure of one subpixel according to the present invention;

    FIG. 5 is a cross-sectional view for describing a structure of a micro light emitting device illustrated in FIG. 4;

    FIG. 6 is a plan view for describing a concave portion provided in a unit pixel according to an embodiment of the present invention;

    FIG. 7 is a cross-sectional view taken along line I-I' illustrated in FIG. 6;

    FIG. 8 is a diagram for describing an alternate embodiment of a concave portion according to an embodiment of the present invention;

    FIG. 9 is a plan view for describing an alternate embodiment of a concave portion according to an embodiment of the present invention;

    FIG. 10 is a diagram according to an informative unclaimed example for describing a routing line of a light emitting diode display device illustrated in FIGS. 2 and 7;

    FIGS. 11A to 11C are diagrams according to an informative unclaimed example for describing a method of manufacturing a plurality of first routing lines illustrated in FIG. 10;

    FIGS. 12 and 13 are cross-sectional views taken along line I-I' illustrated in FIG. 6;

    FIG. 14 is a diagram according to an informative unclaimed example for describing a multi-screen display device;

    FIG. 15 is a cross-sectional view taken along line II-II' illustrated in FIG. 14; and

    FIG. 16A is a multi-screen display device of the related art.

    FIG. 16B is a multi-screen display device according to an informative unclaimed example.


    DETAILED DESCRIPTION



    [0033] Reference will now be made in detail to embodiments of the present invention and to informative unclaimed examples useful for understanding the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts.

    [0034] Advantages and features of the present invention, and implementation methods thereof will be clarified through following embodiments and informative unclaimed examples described with reference to the accompanying drawings.

    [0035] A shape, a size, a ratio, an angle, and a number disclosed in the drawings for describing embodiments of the present disclosure are merely an example, and thus, the present disclosure is not limited to the illustrated details. Like reference numerals refer to like elements throughout. In the following description, when the detailed description of the relevant known technology is determined to unnecessarily obscure the important point of the present disclosure, the detailed description will be omitted.

    [0036] In a case where 'comprise', 'have', and 'include' described in the present specification are used, another part may be added unless 'only∼' is used. The terms of a singular form may include plural forms unless referred to the contrary.

    [0037] In construing an element, the element is construed as including an error range although there is no explicit description.

    [0038] In describing a position relationship, for example, when a position relation between two parts is described as 'on∼', 'over∼', 'under∼', and 'next∼', one or more other parts may be disposed between the two parts unless 'just' or 'direct' is used.

    [0039] In describing a time relationship, for example, when the temporal order is described as 'after∼', 'subsequent∼', 'next∼', and 'before∼', a case which is not continuous may be included unless 'just' or 'direct' is used.

    [0040] It will be understood that, although the terms "first", "second", etc., may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present disclosure.

    [0041] A first horizontal axis direction, a second horizontal axis direction, and a vertical axis direction should not be construed as only a geometric relationship where a relationship therebetween is vertical, and may denote having a broader directionality within a scope where elements of the present disclosure operate functionally.

    [0042] The term "at least one" should be understood as including any and all combinations of one or more of the associated listed items. For example, the meaning of "at least one of a first item, a second item, and a third item" denotes the combination of all items proposed from two or more of the first item, the second item, and the third item as well as the first item, the second item, or the third item.

    [0043] Features of various embodiments of the present invention may be partially or overall coupled to or combined with each other, and may be variously inter-operated with each other and driven technically as those skilled in the art can sufficiently understand. The embodiments of the present invention may be carried out independently from each other, or may be carried out together in co-dependent relationship.

    [0044] In the specification, in adding reference numerals for elements in each drawing, it should be noted that like reference numerals already used to denote like elements in other drawings are used for elements wherever possible. In the following description, when the detailed description of the relevant known function or configuration is determined to unnecessarily obscure the important point of the present disclosure, the detailed description will be omitted.

    [0045] FIG. 1 is a plan view of a light emitting diode display device which may incorporate the present invention.

    [0046] FIG. 2 is a plan view illustrating a rear surface of a substrate illustrated in FIG. 1.

    [0047] FIG. 3 is a diagram for describing a configuration of a unit pixel according to an embodiment illustrated in FIG. 1.

    [0048] Referring to FIGS. 1 to 3, the light emitting diode display device according to the present invention includes a substrate 100, a plurality of first unit pixels UP1, and a plurality of second unit pixels UP2.

    [0049] The substrate 100 may be a thin film transistor (TFT) array substrate and may be formed of glass, a plastic material, and/or the like. The substrate 100 according to the present invention includes a first display area AA1 and a second display area AA2.

    [0050] The first display area AA1 may be defined as a center area other than an edge of the substrate 100.

    [0051] The second display area AA2 is defined to surround the first display area AA1 and overlaps the edge of the substrate 100.

    [0052] In addition, the substrate 100 may further include a non-display area IA surrounding the second display area AA2. The non-display area IA may be provided between an outer surface (e.g., a side surface) of the substrate 100 and the second display area AA2, may have a relatively very narrow width, and may be defined as a bezel area.

    [0053] The plurality of first unit pixels UP1 are provided in the first display area AA1. The plurality of first unit pixels UP1 may be arranged at a predetermined first reference pixel pitch along a first horizontal axis direction X and at a predetermined second reference pixel pitch along a second horizontal axis direction Y in the first display area AA1. Here, the first horizontal axis direction X may be parallel to a first lengthwise direction X of the substrate 100, for example, a long side length direction of the substrate 100, and the second horizontal axis direction Y may be parallel to a second lengthwise direction Y of the substrate 100, for example, a short side length direction of the substrate 100. The first reference pixel pitch may be defined as a distance between center portions of two first unit pixels UP1 which are adjacent to each other along the first horizontal axis direction X, and the second reference pixel pitch may be defined as a distance between center portions of two first unit pixels UP1 which are adjacent to each other along the second horizontal axis direction Y.

    [0054] The plurality of second unit pixels UP2 are provided in the second display area AA2. The second unit pixels UP2 each have a size which is less than that of each of the first unit pixels UP1. That is, a distance between a center portion of each of the second unit pixels UP2 and the outer surface of the substrate 100 may be set to half or less of each of the reference pixel pitches.

    [0055] Adjacent first unit pixels UP1 and second unit pixels UP2 may be provided to have a reference pixel pitch. Therefore, in the light emitting diode display device according to the present embodiment, the plurality of first unit pixels UP1 provided on the substrate 100 may have the same size and may be arranged at the same reference pixel pitch, and in this case, a size of each of a plurality of second unit pixels UP2 adjacent to the outer surface of the substrate 100 is reduced, whereby the light emitting diode display device has a bezel width suitable for minimizing a boundary portion between display devices coupled to each other in a multi-screen display device.

    [0056] The substrate 100 according to an embodiment includes a plurality of pixel driving lines and a plurality of subpixels SP1 to SP3.

    [0057] The pixel driving lines may be provided on a front surface 100a of the substrate 100 and may supply signals necessary for each of the plurality of subpixels SP1 to SP3. The pixel driving lines according to an embodiment may include a plurality of gate lines GL, a plurality of data lines DL, a plurality of driving power lines DPL, and includes a plurality of common power lines CPL.

    [0058] The plurality of gate lines GL may be provided on the front surface 100a of the substrate 100, may long extend along the first horizontal axis direction X of the substrate 100, may be arranged along the second horizontal axis direction Y, and may be spaced apart from each other by a certain interval.

    [0059] The plurality of data lines DL may be provided on the front surface 100a of the substrate 100 to intersect the plurality of gate lines GL, may long extend along the second horizontal axis direction Y of the substrate 100, may be arranged along the first horizontal axis direction X, and may be spaced apart from each other by a certain interval.

    [0060] The plurality of driving power lines DPL may be provided on the substrate 100 in parallel with the plurality of data lines DL and may be formed along with the plurality of data lines DL. Each of the plurality of driving power lines DPL may supply a pixel driving power, supplied from the outside, to an adjacent subpixel SP.

    [0061] The plurality of common power lines CPL may be arranged on the substrate 100 in parallel with the plurality of gate lines GL and may be formed along with the plurality of gate lines GL. Each of the plurality of common power lines CPL may supply a common power, supplied from the outside, to adjacent subpixels SP1 to SP3.

    [0062] The plurality of subpixels SP1 to SP3 may be respectively provided in a plurality of subpixel areas defined by intersections of the gate lines GL and the data lines DL. Each of the plurality of subpixels SP1 to SP3 may be defined as an area corresponding to a minimum unit where light is actually emitted.

    [0063] At least three adjacent subpixels SP1 to SP3 may configure one unit pixel UP for displaying colors. For example, the one unit pixel UP may include a red subpixel SP1, a green subpixel SP2, and a blue subpixel SP3 which are adjacent to each other along the first horizontal axis direction X, and may further include a white subpixel for enhancing luminance.

    [0064] At least three subpixels SP1 to SP3 which are provided adjacent to each other in the first display area AA1 may be defined as a first unit pixel UP1, and at least three subpixels SP1 to SP3 which are provided adjacent to each other in the second display area AA2 may be defined as a second unit pixel UP2.

    [0065] Optionally, one driving power line DPL may be provided in each of the plurality of first unit pixels UP1, and one driving power line DPL may be provided in each of the plurality of second unit pixels UP2. In this case, the at least three subpixels SP1 to SP3 configuring each of unit pixels UP1 and UP2 may share one driving power line DPL. Therefore, the number of driving power lines for driving each of the subpixels SP1 to SP3 is reduced, and in proportion to the reduced number of the driving power lines, an aperture rate of each of the unit pixels UP1 and UP2 increases or a size of each of the unit pixels UP1 and UP2 decreases.

    [0066] The plurality of subpixels SP1 to SP3 each include a pixel circuit PC, a concave portion 130, and a micro light emitting device 150.

    [0067] The pixel circuit PC may be provided in a circuit area defined in each subpixel SP and may be connected to a gate line GL, a data line DL, and a driving power line DPL which are adjacent to the pixel circuit PC. The pixel circuit PC may control a current flowing in the micro light emitting device 150 according to a data signal supplied through the data line DL in response to a scan pulse supplied through the gate line GL, based on the pixel driving power supplied through the driving power line DPL. The pixel circuit PC includes a driving TFT T2 and may include a switching TFT T1, and a capacitor Cst.

    [0068] The switching TFT T1 may include a gate electrode connected to the gate line GL, a first electrode connected to the data line DL, and a second electrode connected to a gate electrode N1 of the driving TFT T2. Here, each of the first and second electrodes of the switching TFT T1 may be a source electrode or a drain electrode according to a direction of a current. The switching TFT T1 may be turned on according to the scan pulse supplied through the gate line GL and may supply the data signal, supplied through the data line DL, to the driving TFT T2.

    [0069] The driving TFT T2 may be turned on by a voltage supplied through the switching TFT T1 and/or a voltage of the capacitor Cst to control the amount of current flowing from the driving power line DPL to the micro light emitting device 150. To this end, the driving TFT T2 may include a gate electrode connected to the second electrode N1 of the switching TFT T1, a drain electrode connected to the driving power line DPL, while a source electrode is connected to the micro light emitting device 150. The driving TFT T2 may control a data current flowing from the driving power line DPL to the micro light emitting device 150 according to the data signal supplied through the switching TFT T1, thereby allowing the micro light emitting device 150 to emit light having brightness proportional to the data signal.

    [0070] The capacitor Cst may be provided in an overlap area between the gate electrode N1 and the source electrode of the driving TFT T2, may store a voltage corresponding to the data signal supplied to the gate electrode of the driving TFT T2, and may turn on the driving TFT T2 with the stored voltage.

    [0071] Optionally, the pixel circuit PC may further include at least one compensation TFT for compensating for a threshold voltage shift of the driving TFT T2, and moreover, may further include at least one auxiliary capacitor. The pixel circuit PC may be additionally supplied with a compensation power such as an initialization voltage, based on the number of TFTs and auxiliary capacitors. Therefore, the pixel circuit PC according to the present embodiment may drive the micro light emitting device 150 through a current driving manner identically to each subpixel of an organic light emitting display device, and thus, may be replaced with a pixel circuit of organic light emitting display devices known to those skilled in the art.

    [0072] The concave portion 130 is provided in each of the plurality of subpixels SP1 to SP3 and is concavely provided for accommodating the micro light emitting device 150. In a process of mounting the micro light emitting device 150 on each of the plurality of subpixels SP1 to SP3, the concave portion 130 prevents deviation of the micro light emitting device 150 and enhances an alignment precision of the micro light emitting device 150.

    [0073] The micro light emitting device 150 is mounted on the concave portion 130 provided in each of the plurality of subpixels SP1 to SP3. The micro light emitting device 150 is electrically connected to the pixel circuit PC of a corresponding subpixel SP and a corresponding common power line CPL, and thus, emits light with a current flowing from the pixel circuit PC (i.e., the driving TFT T2) to the common power line CPL. The micro light emitting device 150 may be a micro light emitting device or a micro light emitting diode chip which emits one of red light, green light, blue light, and white light. For example, the micro light emitting device 150 may be a micro light emitting device or a micro light emitting diode chip. Here, the micro light emitting diode chip may have a scale of 1 µm to 100 µm, but is not limited thereto. In other embodiments, the micro light emitting diode chip may have a size which is less than that of an emissive area other than a circuit area occupied by the pixel circuit PC in a corresponding subpixel area.

    [0074] The light emitting diode display device may further include a display driving circuit.

    [0075] The display driving circuit may be disposed on a rear surface of the substrate 100 and may allow the micro light emitting device 150 of each subpixel SP to emit light. The display driving circuit according to an embodiment may include a plurality of first pad parts PP1, a plurality of first routing lines RL1, a plurality of second pad parts PP2, a plurality of second routing lines RL2, a data driving circuit 210, a gate driving circuit 230, a control board 250, and a timing controller 270.

    [0076] The plurality of first pad parts PP1 may be arranged at certain intervals on a first side rear edge of the substrate 100. The plurality of first pad parts PP1 may each include a plurality of first pads.

    [0077] The plurality of first routing lines RL1 may be electrically connected to respective ends of a plurality of pixel driving lines (in more detail, the plurality of data lines DL) provided on the front surface 100a of the substrate 100, and moreover, may be provided on in a first non-display area IA and a first outer surface of the substrate 100 and a rear edge of the substrate 100 and may be electrically connected to the plurality of first pad parts PP1. That is, the plurality of first routing lines RL1 may be provided to surround the first outer surface of the substrate 100, one ends of the first routing lines RL1 may be respectively connected to the plurality of data lines DL in the first non-display area IA in a one-to-one relationship, and the other ends of the first routing lines RL1 may be respectively connected to the first pads of a corresponding first pad part PP1 provided on a rear surface 100b of the substrate 100. Here, the first non-display area IA of the substrate 100 may be a lower edge area of the substrate 100 illustrated in FIG. 1.

    [0078] The plurality of second pad parts PP2 may be arranged at certain intervals on a second side rear edge of the substrate 100. The plurality of second pad parts PP2 may each include a plurality of second pads.

    [0079] The plurality of second routing lines RL2 may be electrically connected to respective ends of a plurality of pixel driving lines (in more detail, the plurality of gate lines GL) provided on the front surface 100a of the substrate 100, and moreover, may be provided on in a second non-display area IA and a second outer surface of the substrate 100 and the rear edge of the substrate 100 and may be electrically connected to the plurality of second pad parts PP2. That is, the plurality of second routing lines RL2 may be provided to surround the second outer surface of the substrate 100, one ends of the second routing lines RL2 may be respectively connected to the plurality of gate lines GL in the second non-display area IA in a one-to-one relationship, and the other ends of the second routing lines RL2 may be respectively connected to the second pads of a corresponding second pad part PP2 provided on the rear surface 100b of the substrate 100. Here, the second non-display area IA of the substrate 100 may be a right edge area of the substrate 100 illustrated in FIG. 1.

    [0080] The data driving circuit 210 may include a plurality of data flexible circuit films 211 and a plurality of data driving integrated circuits (ICs) 213.

    [0081] The plurality of data flexible circuit films 211 may be respectively attached on, through a film attachment process, the plurality of first pad parts PP1 provided on the rear surface 100b of the substrate 100 in a one-to-one relationship.

    [0082] Each of the plurality of data driving ICs 213 may be individually mounted on a corresponding data flexible circuit film of the plurality of data flexible circuit films 211. The data driving ICs 213 may receive subpixel data and a data control signal supplied from the timing controller 270, convert the subpixel data into analog data voltages by subpixels according to the data control signal, and respectively supply the analog data voltages to the data lines DL.

    [0083] Optionally, the plurality of data driving ICs 213 may be directly mounted on the rear surface 100b of the substrate 100 so as to be respectively connected to the plurality of first pad parts PP1 in a one-to-one relationship without being mounted on the data flexible circuit films 211. Here, the plurality of data driving ICs 213 may be mounted on the rear surface 100b of the substrate 100 through a chip mounting process based on a chip-on glass (COG) type. In this case, the data flexible circuit films 211 may be removed, and thus, a configuration of the data driving circuit 210 is simplified.

    [0084] The gate driving circuit 230 may include a plurality of gate flexible circuit films 231 and a plurality of gate driving ICs 233.

    [0085] The plurality of gate flexible circuit films 231 may be respectively attached on, through a film attachment process, the plurality of second pad parts PP2 provided on the rear surface 100b of the substrate 100 in a one-to-one relationship.

    [0086] Each of the plurality of gate driving ICs 233 may be individually mounted on a corresponding gate flexible circuit film of the plurality of gate flexible circuit films 231. Each of the gate driving ICs 233 may generate a scan pulse, based on a gate control signal supplied from the timing controller 270 and may supply the generated scan pulse to a corresponding gate line GL corresponding to a predetermined order.

    [0087] Optionally, the plurality of gate driving ICs 233 may be directly mounted on the rear surface 100b of the substrate 100 so as to be respectively connected to the plurality of second pad parts PP2 in a one-to-one relationship without being mounted on the gate flexible circuit films 231. Here, the plurality of gate driving ICs 233 may be mounted on the rear surface 100b of the substrate 100 through a chip mounting process based on a COG type. In this case, the gate flexible circuit films 231 may be removed, and thus, a configuration of the gate driving circuit 230 is simplified.

    [0088] The control board 250 may be connected to the plurality of data flexible circuit films 211 and the plurality of gate flexible circuit films 231. For example, the control board 250 may be electrically connected to the plurality of data flexible circuit films 211 through a plurality of first signal transmission cables STC1 and may be electrically connected to the plurality of gate flexible circuit films 231 through a plurality of second signal transmission cables STC2. The control board 250 may support the timing controller 270 and may transfer signals and power between the elements of the display driving circuit.

    [0089] The timing controller 270 may be mounted on the control board 250 and may receive image data and a timing synchronization signal supplied from a display driving system through a user connector provided on the control board 250. The timing controller 270 may align the image data according to a subpixel arrangement structure of the first and second display areas AA1 and AA2 based on the timing synchronization signal to generate subpixel data and may supply the generated subpixel data to the data driving ICs 213. Also, the timing controller 270 may generate the data control signal and the gate control signal, based on the timing synchronization signal and may control a driving timing of each of the data driving ICs 213 and the gate driving ICs 233.

    [0090] Optionally, the plurality of data driving ICs 213, the plurality of gate driving ICs 233, and the timing controller 270 may be integrated into one integration driving IC. In this case, the one integration driving IC may be mounted on the rear surface 100b of the substrate 100, and each of the plurality of first routing lines RL1 and the plurality of second routing lines RL2 may be additionally routed on the rear surface 100b of the substrate 100 and may be electrically connected to a corresponding channel provided in the integration driving IC. In this case, the plurality of first pad parts PP1, the plurality of second pad parts PP2, the plurality of data flexible circuit films 211, and the plurality of gate flexible circuit films 231 may be omitted.

    [0091] In addition, corners of the substrate 100 may be chamfered to have a certain angle or length, or may be rounded to have a certain curvature. Therefore, the plurality of first routing lines RL1 and the plurality of second routing lines RL2 may be easily formed in the corners and outer surface of the substrate 100 without disconnection.

    [0092] In the light emitting diode display device according to the present invention, a size of the second unit pixel UP2 provided in the second display area AA2 overlapping the edge of the substrate 100 is set less than that of the first unit pixel UP1 provided in the first display area AA1 of the substrate 100, and thus, the light emitting diode display device has a bezel width suitable for minimizing a boundary portion between display devices coupled to each other in a multi-screen display device. That is, in the light emitting diode display device according to the present invention, a size of each of the plurality of second unit pixels UP2 adjacent to the outer surface of the substrate 100 is reduced, and the display driving circuit may be provided on the rear surface of the substrate 100, thereby minimizing a bezel area of the substrate 100. Also, since the micro light emitting device 150 is accommodated into the concave portion 130 provided in each of the subpixels SP1 to SP3, alignment precision is enhanced in the mounting (or transfer) process for the micro light emitting device 150, and thus, productivity is enhanced.

    [0093] FIG. 4 is a cross-sectional view for describing a structure of one subpixel illustrated in FIG. 3, and FIG. 5 is a cross-sectional view for describing a structure of a micro light emitting device according to the present invention and illustrated in FIG. 4.

    [0094] Referring to FIGS. 4 and 5 along with FIG. 3, a plurality of subpixels SP1 to SP3 of a light emitting diode display device according to the present invention includes a pixel circuit PC, a passivation layer 110, a concave portion 130, a micro light emitting device 150, a planarization layer 160, a pixel electrode PE, and a common electrode CE.

    [0095] First, in FIG. 4, a thickness of a substrate 100 is relatively thinly illustrated, but the substrate 100 may substantially have a thickness which is relatively much thicker than a total thickness of a layered structure provided on the substrate 100.

    [0096] The pixel circuit PC includes a driving TFT T2 and may include a switching TFT T1 and a capacitor Cst. The pixel circuit PC is as described above, and thus, its detailed description is not provided. Hereinafter, a structure of the driving TFT T2 will be described for example.

    [0097] The driving TFT T2 may include a gate electrode GE, a semiconductor layer SCL, an ohmic contact layer OCL, a source electrode SE, and a drain electrode DE.

    [0098] The gate electrode GE may be formed on the substrate 100 along with the gate line GL. The gate electrode GE may be covered by a gate insulation layer 103. The gate insulation layer 103 may be formed of a single layer or a multilayer including an inorganic material and may be formed of silicon oxide (SiOx) silicon nitride (SiNx), and/or the like.

    [0099] The semiconductor layer SCL may be provided in a predetermined pattern (or island) type on the gate insulation layer 103 to overlap the gate electrode GE. The semiconductor layer SCL may be formed of a semiconductor material including one of amorphous silicon, polycrystalline silicon, oxide, and an organic material, but is not limited thereto.

    [0100] The ohmic contact layer OCL may be provided in a predetermined pattern (or island) type on the semiconductor layer SCL. Here, the ohmic contact layer OCL is for an ohmic contact between the semiconductor layer SCL and the source and drain electrodes SE and DE and may be omitted.

    [0101] The source electrode SE may be formed on one side of the ohmic contact layer OCL to overlap one side of the semiconductor layer SCL. The source electrode SE may be formed along with the data lines DL and the driving power lines DPL.

    [0102] The drain electrode DE may be formed on the other side of the ohmic contact layer OCL to overlap the other side of the semiconductor layer SCL and may be spaced apart from the source electrode SE. The drain electrode DE may be formed along with the source electrode SE and may branch or protrude from an adjacent driving power line DPL.

    [0103] In addition, the switching TFT T1 configuring the pixel circuit PC may be formed in a structure which is the same as that of the driving TFT T2. In this case, the gate electrode of the switching TFT T1 may branch or protrude from the gate line GL, the first electrode of the switching TFT T1 may branch or protrude from the data line DL, and the second electrode of the switching TFT T1 may be connected to the gate electrode GE of the driving TFT T2 through a via hole provided in the gate insulation layer 103.

    [0104] The pixel circuit PC is covered by an interlayer insulation layer 105. The interlayer insulation layer 105 may be provided all over the substrate 100 to cover the pixel circuit PC including the driving TFT T2. The interlayer insulation layer 105 according to an embodiment may be formed of an inorganic material, such as SiOx or SiNx, or an organic material such as benzocyclobutene or photo acryl. The passivation layer 110 is provided all over the substrate 100 to cover the interlayer insulation layer 105. The passivation layer 110 may protect the pixel circuit PC including the driving TFT T2 and may provide a planar surface on the interlayer insulation layer 105. The passivation layer 110 according to an embodiment may be formed of an organic material such as benzocyclobutene or photo acryl, and particularly, may be formed of photo acryl for convenience of a process.

    [0105] The concave portion 130 may be provided in an emissive area of a subpixel area defined in the subpixel SP and accommodates the micro light emitting device 150. The concave portion 130 is provided concavely from the passivation layer 110 to have a certain depth D1. The concave portion 130 includes an accommodating space which is provided concavely from a top 110a of the passivation layer 110 to have a depth D1 corresponding to a thickness (or a total height) of the micro light emitting device 150. Here, a floor surface of the concave portion 130 may be formed by removing a portion of the passivation layer 110, a whole portion of the passivation layer 110, the whole portion of the passivation layer 110 and a portion of the interlayer insulation layer 105, or a whole portion of each of the passivation layer 110, the interlayer insulation layer 105, and the gate insulation layer 103 in order to have the depth D1 which is set based on the thickness of the micro light emitting device 150. For example, the concave portion 130 may be provided to have a depth of 2 µm to 6 µm from the top 110a of the passivation layer 110. The concave portion 130 may have a groove or cup shape having a size which is wider than a rear surface (or a bottom) of the micro light emitting device 150.

    [0106] The concave portion 130 may include an inclined surface provided between the floor surface and the top 110a of the passivation layer 110, and the inclined surface may allow light emitted from the micro light emitting device 150 to travel toward the front of concave portion 130.

    [0107] The micro light emitting device 150 is mounted on the concave portion 130 and is electrically connected to the pixel circuit PC and a common power line CPL, and thus, emits light with a current flowing from the pixel circuit PC (i.e., the driving TFT T2) to the common power line CPL. The micro light emitting device 150 may include a light emitting layer EL, and includes a first electrode (or an anode terminal) E1, and a second electrode (or a cathode terminal) E2.

    [0108] The light emitting layer EL may emit light according to a recombination of an electron and a hole based on a current flowing between the first electrode E1 and the second electrode E2. The light emitting layer EL may include a first semiconductor layer 151, an active layer 153, and a second semiconductor layer 155.

    [0109] The first semiconductor layer 151 may supply an electron to the active layer 153. The first semiconductor layer 151 may be formed of an n-GaN-based semiconductor material, and examples of the n-GaN-based semiconductor material may include GaN, AlGaN, InGaN, AlInGaN, etc. Here, silicon (Si), germanium (Ge), selenium (Se), tellurium (Te), or carbon (C) may be used as impurities used for doping of the first semiconductor layer 151.

    [0110] The active layer 153 may be provided on one side of the first semiconductor layer 151. The active layer 153 may have a multi quantum well (MQW) structure which includes a well layer and a barrier layer which is higher in band gap than the well layer. The active layer 153 may have an MQW structure of InGaN/GaN or the like.

    [0111] The second semiconductor layer 155 may be provided on the active layer 153 and may supply a hole to the active layer 153. The second semiconductor layer 155 may be formed of a p-GaN-based semiconductor material, and examples of the p-GaN-based semiconductor material may include GaN, AlGaN, InGaN, AlInGaN, etc. Here, magnesium (Mg), zinc (Zn), or beryllium (Be) may be used as impurities used for doping of the second semiconductor layer 155.

    [0112] The first electrode E1 may be provided on the second semiconductor layer 155. The first electrode E1 is connected to the source electrode SE of the driving TFT T2.

    [0113] The second electrode E2 may be provided on the other side of the first semiconductor layer 151 and may be electrically disconnected from the active layer 153 and the second semiconductor layer 155. The second electrode E2 is connected to the common power line CPL.

    [0114] Each of the first and second electrodes E1 and E2 may be formed of a material including one or more materials of a metal material, such as gold (Au), tungsten (W), platinum (Pt), silicon (Si), iridium (Ir), silver (Ag), copper (Cu), nickel (Ni), titanium (Ti), or chromium (Cr), and an alloy thereof. In other embodiments, each of the first and second electrodes E1 and E2 may be formed of a transparent conductive material, and examples of the transparent conductive material may include indium tin oxide (ITO), indium zinc oxide (IZO), etc. However, the present embodiment is not limited thereto.

    [0115] In addition, the first semiconductor layer 151, the active layer 153, and the second semiconductor layer 155 may be provided in a structure of being sequentially stacked on a semiconductor substrate. Here, the semiconductor substrate may include a semiconductor material included in a sapphire substrate or a silicon substrate. The semiconductor substrate may be used as a growth semiconductor substrate for growing each of the first semiconductor layer 151, the active layer 153, and the second semiconductor layer 155, and then, may be separated from the first semiconductor layer 151 through a substrate separation process. Here, the substrate separation process may be a laser lift-off process or a chemical lift-off process. Therefore, since the growth semiconductor substrate is removed from the micro light emitting device 150, the micro light emitting device 150 has a thin thickness, and thus, may be accommodated into the concave portion 130 provided in each subpixel SP.

    [0116] The micro light emitting device 150 may emit the light according to the recombination of the electron and the hole based on the current flowing between the first electrode E1 and the second electrode E2. In this case, the light emitted from the micro light emitting device 150 may pass through the first and second electrodes E1 and E2 and may be output to the outside. In other words, the light emitted from the micro light emitting device 150 may pass through the first and second electrodes E1 and E2 and may be output in a second direction opposite to a first direction toward the floor surface of the concave portion 130, thereby displaying an image.

    [0117] The micro light emitting device 150 may include a first portion (or a front portion) FP, including the first and second electrodes E1 and E2 connected to the pixel circuit PC, and a second portion (or a rear portion) RP opposite to the first portion FP. In this case, the first portion FP may be disposed relatively farther away from the floor surface of the concave portion 130 than the second portion RP. Here, the first portion FP may have a size which is less than that of the second portion RP, and in this case, the micro light emitting device 150 may have a cross-sectional surface having a trapezoid shape which includes a top corresponding to the first portion FP and a bottom corresponding to the second portion RP.

    [0118] The planarization layer 160 is provided on the passivation layer 110 to cover the micro light emitting device 150. That is, the planarization layer 160 may be provided on the passivation layer 110 to have a thickness which enables the planarization layer 160 to cover a top of the passivation layer 110 and a front surface of the other accommodating space of the concave portion 130 into which the micro light emitting device 150 is accommodated.

    [0119] The planarization layer 160 may provide a planarization surface on the passivation layer 110. Also, the planarization layer 160 may be buried into the other accommodating space of the concave portion 130 into which the micro light emitting device 150 is accommodated, thereby fixing a position of the micro light emitting device 150.

    [0120] The pixel electrode PE electrically connects the first electrode E1 of the micro light emitting device 150 to the source electrode SE of the driving TFT T2 and may be defined as an anode electrode. The pixel electrode PE according to the present invention is provided on a top 160a of the planarization layer 160 overlapping the driving TFT T2 and the first electrode E1 of the micro light emitting device 150. The pixel electrode PE is electrically connected to the source electrode SE of the driving TFT T2 through a first circuit contact hole CCH1 which is provided to pass through the interlayer insulation layer 105, the passivation layer 110, and the planarization layer 160, and is electrically connected to the first electrode E1 of the micro light emitting device 150 through a first electrode contact hole ECH1 provided in the planarization layer 160. Therefore, the first electrode E1 of the micro light emitting device 150 is electrically connected to the source electrode SE of the driving TFT T2 through the pixel electrode PE. Since, the light emitting diode display device has a top emission structure, the pixel electrode PE may be formed of a transparent conductive material. Here, the transparent conductive material may be indium tin oxide (ITO), indium zinc oxide (IZO), or the like, but is not limited thereto.

    [0121] The common electrode CE is electrically connected to the second electrode E2 of the micro light emitting device 150 and the common power line CPL and may be defined as a cathode electrode. The common electrode CE is provided on the top 160a of the planarization layer 160 overlapping the second electrode E2 of the micro light emitting device 150 and the common power line CPL. Here, the common electrode CE may be formed of a material which is the same as that of the pixel electrode PE.

    [0122] One side of the common electrode CE according to the present invention is electrically connected to the common power line CPL through a second circuit contact hole CCH2 which is provided to pass through the gate insulation layer 103, the interlayer insulation layer 105, the passivation layer 110, and the planarization layer 160. The other side of the common electrode CE is electrically connected to the second electrode E2 of the micro light emitting device 150 through a second electrode contact hole ECH2 which is provided in the planarization layer 160 to overlap the second electrode E2 of the micro light emitting device 150. Therefore, the second electrode E2 of the micro light emitting device 150 is electrically connected to the common power line CPL through the common electrode CE.

    [0123] The pixel electrode PE and the common electrode CE may be simultaneously provided through an electrode patterning process using a lithography process, an etching process, and a deposition process of depositing an electrode material on the planarization layer 160 including the first and second circuit contact holes CCH1 and CCH2 and the first and second electrode contact holes ECH1 and ECH2. Therefore, since the common electrode CE and the pixel electrode PE connecting the micro light emitting device 150 and the pixel circuit PC are simultaneously formed, an electrode connection process is simplified, and a process time taken in a process of connecting the micro light emitting device 150 and the pixel circuit PC is considerably shortened, thereby enhancing a productivity of the light emitting diode display device.

    [0124] The light emitting diode display device according to the present invention further includes a transparent buffer layer 170.

    [0125] The transparent buffer layer 170 is provided on the substrate 100 to cover a whole portion of the planarization layer 160 where the pixel electrode PE and the common electrode CE are provided, and thus, may provide a planarization surface on the planarization layer 160, thereby protecting the micro light emitting device 150 and the pixel circuit PC from an external impact. Therefore, the pixel electrode PE and the common electrode CE are provided between the planarization layer 160 and the transparent buffer layer 170. The transparent buffer layer 170 may be an optical clear adhesive (OCA) or an optical clear resin (OCR), but is not limited thereto.

    [0126] The light emitting diode display device according to the present invention further includes a reflective layer 101 provided under an emissive area of each subpixel SP.

    [0127] The reflective layer 101 is provided between the floor surface of the concave portion 130 and the substrate 100 to overlap the emissive area including the micro light emitting device 150. The reflective layer 101 may be formed of a material which is the same as that of the gate electrode GE of the driving TFT T2, and may be provided on the same layer as the gate electrode GE. The reflective layer 101 reflects light, which is incident from the micro light emitting device 150, toward the first portion FP of the micro light emitting device 150. Accordingly, the light emitting diode display device according to the present invention includes the reflective layer 101, and thus, has a top emission structure.

    [0128] Optionally, the reflective layer 101 may be formed of a material which is the same as that of the source/drain electrode SE/DE of the driving TFT T2, and may be provided on the same layer as the source/drain electrode SE/DE.

    [0129] In the light emitting diode display device according to the present invention, the micro light emitting device 150 mounted in each subpixel SP may be adhered to the floor surface of the concave portion 130 by an adhesive member 120.

    [0130] The adhesive member 120 may be disposed between the concave portion 130 of each subpixel SP and the micro light emitting device 150 and may attach the micro light emitting device 150 on the floor surface of the concave portion 130, thereby primarily fixing the micro light emitting display device 150.

    [0131] The adhesive member 120 may be attached (coated) on the second portion RP of the micro light emitting device 150 (i.e., a back surface of the first semiconductor layer 151), and thus, in a mounting process of mounting the micro light emitting device 150 onto the concave portion 130, the adhesive member 120 may be adhered to the concave portion 130 of each subpixel SP.

    [0132] In other embodiments, the adhesive member 120 may be dotted onto the concave portion 130 of each subpixel SP and may be spread by pressure which is applied to the adhesive member 120 in a mounting process performed for the micro light emitting device 150, and thus, may be adhered to the second portion RP of the micro light emitting device 150. Therefore, the micro light emitting device 150 mounted on the concave portion 130 may be primarily position-fixed by the adhesive member 120. Accordingly, the mounting process for the micro light emitting device 150 may be performed in a method of simply attaching the micro light emitting device 150 on the floor surface of the concave portion 130, and thus, a mounting process time taken in performing the mounting process for the micro light emitting device 150 is shortened.

    [0133] In other embodiments, the adhesive member 120 may be coated on the top 110a of the passivation layer 110 and the floor surface and an inclined surface of the concave portion 130. That is, the adhesive member 120 may be provided to wholly cover a portion of a front surface of the passivation layer 110 except the contact holes. In other words, the adhesive member 120 may be disposed between the passivation layer 110 and the planarization layer 160 and may be disposed between the passivation layer 110 and the micro light emitting device 150. In other embodiments, the adhesive member 120 may be coated on the whole top 110a of the passivation layer 110, where the concave portion 130 is provided, to a certain thickness. A portion of the adhesive member 120 coated on the top 110a of the passivation layer 110, where the contact holes are to be provided, may be removed when forming the contact holes. Therefore, in the present embodiment, immediately before a mounting process for the micro light emitting device 150, the adhesive member 120 may be coated on the whole top 110a of the passivation layer 110 to have a certain thickness, and thus, according to the present embodiment, a process time taken in forming the adhesive member 120 is shortened.

    [0134] In the present embodiment, the adhesive member 120 may be provided on the whole top 110a of the passivation layer 110, and thus, the planarization layer 160 according to the present embodiment is provided to cover the adhesive member 120.

    [0135] A mounting process for a micro light emitting device according to an embodiment may include a process of mounting a red micro light emitting device on each of red subpixels SP1, a process of mounting a green micro light emitting device on each of green subpixels SP2, and a process of mounting a blue micro light emitting device on each of blue subpixels SP3, and moreover, may further include a process of mounting a white micro light emitting device on each of white subpixels.

    [0136] The mounting process for the micro light emitting device according to an embodiment may include only a process of mounting the white micro light emitting device on each of subpixels. In this case, the substrate 100 may include a color filter layer overlapping each subpixel. The color filter layer may transmit only light, having a wavelength of a color corresponding to a corresponding subpixel, of white light.

    [0137] The mounting process for the micro light emitting device according to an embodiment may include only a process of mounting a first-color micro light emitting device on each subpixel. In this case, the substrate 100 may include a wavelength conversion layer and the color filter layer overlapping each subpixel. The wavelength conversion layer may emit light of a second color, based on some of light of the first color incident from the first-color micro light emitting device. The color filter layer may transmit only light, having a wavelength of a color corresponding to a corresponding subpixel, of white light based on a combination of the light of the first color and the light of the second color. Here, the first color may be blue, and the second color may be yellow. The wavelength conversion layer may include a phosphor or a quantum dot which emits the light of the second color, based on some of the light of the first color.

    [0138] FIG. 6 is a plan view for describing a concave portion provided in a unit pixel according to an embodiment of the present invention, and FIG. 7 is a cross-sectional view taken along line I-I' illustrated in FIG. 6.

    [0139] Referring to FIGS. 6 and 7, in the present invention, first to third subpixels SP1 to SP3 configuring each a plurality of first unit pixels UP1 each include a concave portion 130 which is provided concavely from a top of a passivation layer 110.

    [0140] First, in each of the first unit pixels UP1, the second subpixel SP2 may be provided in the middle of a unit pixel area, the first subpixel SP1 may be provided on one side of the second subpixel SP2, and the third subpixel SP3 may be provided on the other side of the second subpixel SP2.

    [0141] The concave portion 130 provided in the second subpixel SP2 may have a planarly tetragonal shape, and a center line CLg2 of the concave portion 130 with respect to a first horizontal axis direction X may match a second center line CL2 of the second subpixel SP2. For example, the concave portion 130 of the second subpixel SP2 may be provided in a center portion of the first unit pixel UP1. Therefore, a distance L between a center portion of the concave portion 130 provided in the second subpixel SP2 and an outer surface of a substrate 100 may be set to half "P/2" or less of a reference pixel pitch P.

    [0142] The concave portion 130 provided in the first subpixel SP1 may have a planarly tetragonal shape and may be provided close to the concave portion 130 provided in the second subpixel SP2. That is, a center line CLg1 of the concave portion 130 provided in the first subpixel SP1 with respect to the first horizontal axis direction X may be provided at a position which is spaced apart from a center line CL1 of the first subpixel SP1 by a first distance d1 in a direction toward the second subpixel SP2.

    [0143] The concave portion 130 provided in the third subpixel SP3 may have a planarly tetragonal shape and may be provided close to the concave portion 130 provided in the second subpixel SP2. That is, a center line CLg3 of the concave portion 130 provided in the third subpixel SP3 with respect to the first horizontal axis direction X may be provided at a position which is spaced apart from a center line CL3 of the third subpixel SP3 by a second distance d2 in a direction toward the second subpixel SP2.

    [0144] The first to third subpixels SP1 to SP3 of each of the first unit pixels UP1 may have the same width Wa with respect to the first horizontal axis direction X.

    [0145] In each of the first unit pixels UP1, the concave portions 130 respectively provided in the first to third subpixels SP1 to SP3 may be provided to concentrate on a center portion of the first unit pixel UP1. Each first unit pixel UP1 may have a first width W1 corresponding to a predetermined resolution, and the plurality of first unit pixels UP1 may be arranged at the reference pixel pitch P. Here, the reference pixel pitch P may be defined as a distance between center portions of two first unit pixels UP1 which are adjacent to each other with respect to the first horizontal axis direction X and a second horizontal axis direction Y. In other words, the reference pixel pitch P may be defined as a distance between the same subpixels provided in two first unit pixels UP1 which are adjacent to each other with respect to the first horizontal axis direction X. That is, the reference pixel pitch P may be defined as a distance between micro light emitting devices 150 respectively provided in second subpixels SP2 of two adjacent first unit pixels UP1. For example, the first unit pixel UP1 may be configured with a red subpixel SP1, a green subpixel SP2, and a blue subpixel SP3, and in this case, the reference pixel pitch P may be a distance between concave portions 130 (or micro light emitting devices 150) respectively provided in adjacent red subpixels SP1, a distance between concave portions 130 (or micro light emitting devices 150) respectively provided in adjacent green subpixels SP2, or a distance between concave portions 130 (or micro light emitting devices 150) respectively provided in adjacent blue subpixels SP3, with respect to the first horizontal axis direction X.

    [0146] In each of the plurality of second unit pixels UP2, the second subpixel SP2 may be provided in the middle of a unit pixel area, the first subpixel SP1 may be provided on one side of the second subpixel SP2, and the third subpixel SP3 may be provided on the other side of the second subpixel SP2 and may be provided adjacent to the outer surface of the substrate 100. Here, the outer surface of the substrate 100 may be defined as a side wall vertical to an end of a front surface 100a of the substrate 100, or may be defined as an outermost surface of the substrate 100 exposed to the outside. That is, the side wall of the substrate 100 may be directly exposed to the outside, or may be covered by structures such as a routing line, a passivation layer, etc., and thus may not be directly exposed to the outside. Therefore, the outer surface of the substrate 100 may be defined as the outermost surface of the substrate 100 exposed to the outside.

    [0147] The concave portions 130 respectively provided in the first to third subpixels SP1 to SP3 in each second unit pixel UP2 are the same as the concave portions of the first unit pixels UP1, and thus, their repetitive descriptions are not provided.

    [0148] In each of the second unit pixels UP2, since each of the first and second subpixels SP1 and SP2 is adjacent to a corresponding first unit pixel UP1, each of the first and second subpixels SP1 and SP2 may be provided to have the width Wa which is the same as that of each of subpixels of the corresponding first unit pixel UP1.

    [0149] On the other hand, the third subpixel SP3 of each second unit pixel UP2 may be provided to have a width Wb which is narrower than the width Wa of each of the first and second subpixels SP1 and SP2. In detail, in each second unit pixel UP2, the concave portions 130 may be provided to concentrate on center portions of unit pixels, and thus, even when a portion of an area of the third subpixel SP3 adjacent to the non-display area IA of the substrate 100 is removed, the quality of an image displayed on a corresponding unit pixel UP2 is not affected. Therefore, the width Wb of the third subpixel SP3 with respect to the first horizontal axis direction X may be reduced by the second distance d2 at which the micro light emitting device 150 mounted on the third subpixel SP3 is disposed close to the second subpixel SP2 with respect to the center line CL3 of the third subpixel SP3. In this case, a maximum distance L between the second unit pixel UP2 and the outer surface of the substrate 100 may be set to half "P/2" or less of the reference pixel pitch P at which the plurality of first unit pixels UP1 are arranged, namely, may be set equal to or less than half of the reference pixel pitch P. Therefore, since a size of each of the third subpixels SP3 is reduced in the second unit pixels UP2 adjacent to a bezel area of the substrate 100, the light emitting diode display device t has a bezel width suitable for a boundary portion between display devices connected to each other in a multi-screen display device.

    [0150] In addition, the light emitting diode display device according to an embodiment of the present invention may further include a side sealing member 107.

    [0151] The side sealing member 107 may be provided to cover the outer surface of the substrate 100 and a side surface of the transparent buffer layer 170. The side sealing member 107 may be formed of a silicon-based or UV curing-based sealant (or resin), but considering a process tack time, the side sealing member 107 may be formed of a UV curing-based sealant. Also, the side sealing member 107 may have a color (for example, blue, red, green, or black), or may be formed of a colored resin or a light blocking resin for preventing side light leakage without being limited thereto. The side sealing member 107 prevents side light leakage while light emitted from the micro light emitting device 150 of each subpixel SP travels in a direction from the inside of the transparent buffer layer 170 to an outermost surface, and buffers an external impact to prevent a side surface of each of the substrate 100 and the transparent buffer layer 170 from being damaged by the external impact.

    [0152] FIG. 8 is a diagram for describing an alternate embodiment of a concave portion according to an embodiment of the present invention.

    [0153] Referring to FIG. 8, a plurality of concave portions 130 respectively provided in a plurality of subpixels SP1, SP2 and SP3 of each of a plurality unit pixels UP1 and UP2 according to the modification embodiment may have the same shapes and may be formed concavely from a passivation layer 110 to have different depths D1, D2 and D3 in respective subpixels SP, respectively.

    [0154] The concave portions 130 according to an embodiment may be provided to have the different depths D1 to D3 from the passivation layer 110, based on a height of a micro light emitting device 150 which is to be provided in a corresponding subpixel, thereby removing or minimizing a height deviation (or a step height) between micro light emitting devices by colors.

    [0155] In order to realize a color image, the light emitting diode display device according to the present embodiment may include a red subpixel SP1, a green subpixel SP2, and a blue subpixel SP3, and the micro light emitting device 150 may be provided by colors and may be disposed in the concave portion 130 provided in a subpixel having a corresponding color. In this case, the color-based micro light emitting devices 150 may have different heights (or thicknesses) due to a process error of a manufacturing process. For example, thicknesses of the color-based micro light emitting devices 150 may be thickened in the order of red, green, and blue. In this case, the depths D1 to D3 of the concave portions 130 may be deeply provided in the order of the red subpixel SP1, the green subpixel SP2, and the blue subpixel SP3, based on a height of a corresponding micro light emitting device 150.

    [0156] Therefore, in the present embodiment, the depths of the concave portions 130 provided in respective subpixels may be differently set based on a height (or a thickness) of the micro light emitting device 150 which is to be provided in a corresponding subpixel, and thus, uppermost surfaces (for example, tops of first electrodes E1) of the color-based micro light emitting devices 150 disposed in respective subpixels may be disposed on the same horizontal line HL, thereby preventing an open defect, where first electrodes (or second electrodes) of the color-based micro light emitting devices 150 are not exposed, from occurring due to a thickness deviation between the color-based micro light emitting devices 150 in a patterning process for first and second electrode contact holes. Also, in the present embodiment, in the top emission structure, an optical distance between a reflective layer 101 and the color-based micro light emitting devices of each subpixel is optimized by using the concave portions 130 which are provided to the different depths D1 to D3 in respective subpixels, and thus, a reflection efficiency of the reflective layer 101 is improved, thereby maximizing a light efficiency of each of the micro light emitting devices.

    [0157] FIG. 9 is a plan view for describing an alternate embodiment of a concave portion according to an embodiment of the present invention.

    [0158] Referring to FIG. 9, in the present embodiment, a plurality of concave portions 130 respectively provided in a plurality of subpixels SP1 to SP3 of each of a plurality of unit pixels UP1 and UP2 may communicate with each other without a boundary portion and may include one accommodating space. That is, each of a plurality of first unit pixels UP1 and each of a plurality of second unit pixels UP2 may include only one concave portion 130 provided all over first to third subpixels SP1 to SP3.

    [0159] The concave portion 130 may have a tetragonal shape which extends toward the first subpixel SP1 and the third subpixel SP3 with respect to a center portion of each of the unit pixels UP1 and UP2 or a center line CL2 of the second subpixel SP2. That is, a center line CLg of the concave portion 130 may match the center line CL2 of the second subpixels SP2 with respect to the first horizontal axis direction X.

    [0160] As described above, in the embodiment of the present invention, since the one concave portion 130 is provided in the unit pixels UP1 and UP2, deviation of the micro light emitting device 150 is prevented in a mounting process for a micro light emitting device 150 corresponding to each of the subpixels SP1 to SP3, and an alignment precision of the micro light emitting device 150 is enhanced.

    [0161] FIG. 10 is a diagram according to an unclaimed informative example for describing a routing line of the light emitting diode display device illustrated in FIGS. 2 and 7.

    [0162] Referring to FIG. 10, in the light emitting diode display device, a substrate 100 may include a plurality of grooves 100c provided in a first non-display area IA1.

    [0163] The first non-display area IA1 of the substrate 100 may be defined as a lower non-display area of the substrate 100 overlapping an edge of each of a plurality of data lines DL.

    [0164] The plurality of grooves 100c may be arranged at certain intervals along a first horizontal axis direction X and may be provided concavely in a direction from an outer surface of the substrate 100 to a second display area AA2. The plurality of grooves 100c may be formed through a substrate cutting process. The substrate cutting process may cut a portion of an edge of the substrate 100 corresponding to a space between the plurality of data lines DL by using a laser scribing process to form the plurality of grooves 100c. Therefore, the outer surface of the substrate 100 may include the concavely provided plurality of grooves 100c and a plurality of protrusions 100p which are provided between the plurality of grooves 100c and respectively overlap ends of the plurality of data lines DL.

    [0165] In the light emitting diode display device, a plurality of first routing lines RL1 may be respectively connected to the plurality of data lines DL, provided on a front surface 100a of the substrate 100, through the respective protrusions 100p provided on the substrate 100 in a one-to-one relationship.

    [0166] The plurality of second routing lines RL2 may each include a side routing pattern SRP and a rear routing pattern RRP

    [0167] The side routing pattern SRP may be provided to surround half or less of each of the plurality of protrusions 100p. That is, the side routing pattern SRP may be formed to fully surround approximate half of each of the plurality of protrusions 100p and may be provided through a dipping process using a conductive solution or a silver paste.

    [0168] The rear routing pattern RRP may be provided in an edge of a rear surface 100b of the substrate 100 and may be electrically connected to the side routing pattern SRP. Also, the rear routing pattern RRP may be electrically connected to a first pad of a first pad part provided on the rear surface 100b of the substrate 100. The rear routing pattern RRP may be provided through a printing process using a conductive paste, for example, a silver paste.

    [0169] In addition, in the light emitting diode display device, the substrate 100 may further include a plurality of grooves, provided in a second non-display area overlapping ends of a plurality of gate lines, and a plurality of protrusions provided between the plurality of grooves. The plurality of second routing lines may be respectively provided in the plurality of protrusions in the same structure and method as the above-described plurality of first routing lines, and thus, their detailed descriptions are not repeated.

    [0170] FIGS. 11A to 11C are diagrams according to an unclaimed informative example for describing a method of manufacturing the plurality of first routing lines illustrated in FIG. 10.

    [0171] The method of manufacturing the plurality of first routing lines will be described with reference to FIGS. 11A to 11C.

    [0172] First, a substrate 100 including a plurality of pixel driving lines including a plurality of data lines DL may be provided.

    [0173] Subsequently, as illustrated in FIG. 11A, a plurality of grooves 100c may be formed through a substrate cutting process in order for ends of the plurality of data lines DL to protrude. The substrate cutting process may cut a portion of an edge of the substrate 100 corresponding to a space between the plurality of data lines DL by using a laser scribing process to form a plurality of protrusions 100p overlapping the ends of the plurality of data lines DL.

    [0174] Subsequently, as illustrated in FIG. 11B, a plurality of side routing patterns SRP which respectively surround the plurality of protrusions 100p provided on the substrate 100 in a one-to-one relationship may be formed. For example, the plurality of side routing patterns SRP may be formed by a dipping process of dipping approximate half of each of the protrusions 100p into a conductive solution and coating the conductive solution on a front surface, a side surface, and a rear surface of each of the plurality of protrusions 100p. By performing the dipping process, each of the plurality of side routing patterns SRP electrically and respectively connected to the plurality of data lines DL may be individually provided, and each of the plurality of side routing patterns SRP may be electrically separated from each other by the plurality of grooves 100c provided on the substrate 100. Here, the conductive solution may include a conductive paste, for example, a silver paste.

    [0175] Subsequently, as illustrated in FIG. 11C, the plurality of rear routing patterns RRP which are respectively connected to the plurality of side routing patterns SPR in a one-to-one relationship may be formed on a rear surface 100b of the substrate 100, thereby providing a plurality of first routing lines RL1 including a side routing pattern SPR and a rear routing pattern RRP which are connected to the ends of the plurality of data lines DL and extend to the outer surface and the rear surface 100b of the substrate 100. Here, the plurality of rear routing patterns RRP may be provided through a printing process using a conductive paste.

    [0176] In addition, in the light emitting diode display device according to the unclaimed informative example, the plurality of second routing lines are provided by a manufacturing method which is the same as a method of manufacturing the plurality of first routing lines, and thus, description on the manufacturing method is not repeated.

    [0177] By using the routing line and the method of manufacturing the same according to the unclaimed informative example, a process of forming a routing line on the outer surface of the substrate 100 is simplified, electrical short circuit between adjacent routing lines is prevented, and a chamfer process or a rounding process for the edge of the substrate 100 may be omitted.

    [0178] FIG. 12 is a cross-sectional view taken along line I-I' illustrated in FIG. 6 and illustrates an informative unclaimed example where a color filter is added to the light emitting diode display device according to an embodiment of the present disclosure. Hereinafter, therefore, only an element added to the light emitting diode display device will be described.

    [0179] Referring to FIG. 12 along with FIG. 6, the light emitting diode display device according to the unclaimed informative example may further include a black matrix BM and a color filter layer CFL.

    [0180] First, a micro light emitting device 150 provided in each of a plurality of subpixels SP1 to SP3 may emit white light. That is, all the micro light emitting devices 150 provided on a substrate 100 may be white micro light emitting devices emitting white light.

    [0181] The black matrix BM may define an opening area of each of the subpixels SP1 to SP 3 and may be directly provided on a top 170a of a transparent buffer layer 170 which overlaps the micro light emitting device 150 of each of the subpixels SP1 to SP3 in a one-to-one relationship, thereby preventing color mixture between adjacent subpixels SP1 to SP3. The black matrix BM may include a light absorbing material.

    [0182] Optionally, the black matrix BM may be provided to cover side surface of the transparent buffer layer 170 and an outer surface of the substrate 100. In this case, the black matrix BM prevents side light leakage while light emitted from the micro light emitting device 150 of each of the subpixels SP1 to SP3 travels in a direction from the inside of the transparent buffer layer 170 to an outermost surface.

    [0183] The color filter layer CFL may be directly formed on a top 170a of the transparent buffer layer 170 overlapping the opening area defined by the black matrix BM and may include a red color filter CF1, a green color filter CF2, and a blue color filter CF3 corresponding to respective colors defined in the plurality of subpixels SP1 to SP3. The color filter layer CFL may transmit only light, having a wavelength of a color corresponding to a corresponding subpixel SP, of the white light emitted from each of the subpixels SP1 to SP3.

    [0184] In addition, the light emitting diode display device according to the unclaimed informative example may further include a cover layer 190.

    [0185] The cover layer 190 may be provided on the substrate 100 to cover the black matrix BM and the color filter layer CFL. The cover layer 190 may be formed of a material having a relatively low refractive index. For example, the cover layer 190 may be formed of LiF, MgF2, CaF2, ScF3, and/or the like and may have a multi-layer structure having different refractive indexes. The cover layer 190 may be provided on the substrate 100 to cover the black matrix BM and the color filter layer CFL, thereby protecting each of the subpixels SP1 to SP3 and efficiently outputting light, emitted from a micro light emitting device 150 of each of the subpixels SP1 to SP3, to the outside.

    [0186] Optionally, the light emitting diode display device according to unclaimed informative example may further include a side coating layer 109.

    [0187] The side coating layer 109 may be provided to cover an outer surface of the cover layer 109. The side coating layer 109 may be provided to cover the outer surface of the cover layer 190 through a coating process using a black ink including a black-based light absorbing material. Furthermore, the side coating layer 109 may be additionally provided on the outer surface of the substrate 100 and a side surface of the black matrix BM. The side coating layer 109 prevents side light leakage while light emitted from the micro light emitting device 150 of each of the subpixels SP1 to SP3 travels in a direction from the inside of the cover layer 190 to an outermost surface.

    [0188] The cover layer 190 may be replaced with a transparent substrate including a glass material or a transparent plastic material, and in this case, the transparent substrate may be adhered to the black matrix BM and the color filter layer CFL by using a transparent adhesive member. Furthermore, the black matrix BM and the color filter layer CFL may be provided on the transparent substrate without being directly formed on a top 170a of the transparent buffer layer 170, and in this case, the transparent substrate including the black matrix BM and the color filter layer CFL may be adhered to the top 170a of the transparent buffer layer 170 by using the transparent adhesive member.

    [0189] As described above, in the unclaimed informative example, since the micro light emitting devices 150 having the same color are respectively mounted on the subpixels SP1 to SP3, a mounting process for the micro light emitting devices 150 may be performed without differentiating micro light emitting devices by colors, thereby shortening a mounting process time taken in the mounting process for the micro light emitting devices.

    [0190] FIG. 13 is a cross-sectional view taken along line I-I' illustrated in FIG. 6 and illustrates an unclaimed informative example where a wavelength conversion layer is added to the light emitting diode display device illustrated in FIG. 12. Hereinafter, therefore, the wavelength conversion layer and elements relevant thereto will be described.

    [0191] Referring to FIG. 13, in the light emitting diode display device according to the unclaimed informative example, if a micro light emitting device 150 emitting light of a first color except white is identically disposed in each of a plurality of subpixels SP1 to SP3, a wavelength conversion layer 180 may be provided on a top of a transparent buffer layer 170, for realizing colors through a plurality of unit pixels UP1 and UP2. That is, the wavelength conversion layer 180 may be provided between the color filter layer CFL and the transparent buffer layer 170.

    [0192] The wavelength conversion layer 180 may emit light of a second color, based on the light of the first color incident from the micro light emitting device 150 of each of the subpixels SP1 to SP3. That is, the wavelength conversion layer 180 may absorb the light of the first color and may emit the light of the second color through re-emission. Here, the light of the first color may be blue light, and the light of the second color may be yellow light.

    [0193] For example, the wavelength conversion layer 180 may be directly coated on a top 170a of the transparent buffer layer 170 in a liquid state, and then, may be cured by a curing process using heat and/or light. As another example, the wavelength conversion layer 180 may be manufactured in a sheet form and may be directly adhered to the top 170a of the transparent buffer layer 170.

    [0194] The wavelength conversion layer 180 may include a phosphor or a quantum dot.

    [0195] The phosphor may be a yellow phosphor which is excited by blue light to emit yellow light, and for example, may be an yttrium aluminum garnet (YAG)-based material.

    [0196] The quantum dot may be excited by blue light to emit yellow light and may have a size for emitting light having a yellow wavelength, and for example, may include CdS, CdSe, CdTe, ZnS, ZnSe, GaAs, GaP, GaAs-P, Ga-Sb, InAs, InP, InSb, AlAs, A1P, AlSb, and/or the like.

    [0197] The light of the second color, which is re-emitted from the wavelength conversion layer 180 irradiated onto a cover layer 190, may be combined with the light of the first color irradiated onto the second substrate 500 without being re-emitted from the wavelength conversion layer 180, and thus, may be converted into white light. The white light may be filtered by a color filter overlapping each of the subpixels SP1 to SP3, and thus, may be emitted as color light corresponding to each of the subpixels SP1 to SP3.

    [0198] Except that the black matrix BM and the color filter layer CFL are provided on the top 170a of the wavelength conversion layer 180, the black matrix BM and the color filter layer CFL are the same as FIG. 12, and thus, their detailed descriptions are not repeated.

    [0199] As described above, since the micro light emitting devices 150 having the same color are respectively mounted on the subpixels SP1 to SP3, a mounting process for the micro light emitting devices 150 may be performed without differentiating micro light emitting devices by colors, thereby shortening a mounting process time taken in the mounting process for the micro light emitting devices.

    [0200] The cover layer 190 may be replaced with a transparent substrate including a glass material or a transparent plastic material, and in this case, the transparent substrate may be adhered to the wavelength conversion layer 180 by using a transparent adhesive member. Furthermore, the wavelength conversion layer 180 may be provided on the transparent substrate without being directly be formed on a top 170a of the transparent buffer layer 170, and in this case, the transparent substrate may be adhered to the top 170a of the transparent buffer layer 170 by using the transparent adhesive member.

    [0201] FIG. 14 is a diagram for describing a multi-screen display device according to an unclaimed informative example, and FIG. 15 is a cross-sectional view taken along line II-II' illustrated in FIG. 14.

    [0202] Referring to FIGS. 14 and 15 along with FIG. 7, the multi-screen display device according to the unclaimed informative example may include a plurality of screen modules 500-1, 500-2, 500-3 and 500-4 and a housing 600.

    [0203] The plurality of screen modules 500-1 to 500-4 may be arranged in an N×M form (where N is a positive integer equal to or more than two, and M is a positive integer equal to or more than two) to respectively display individual images or divisionally display one image. The plurality of screen modules 500-1 to 500-4 may each include the light emitting diode display device illustrated in FIGS. 1 to 13, and a repetitive description on the light emitting diode display device is not provided.

    [0204] Side surfaces of the plurality of screen modules 500-1 to 500-4 may be coupled to each other by a module coupling member 700 provided on the outer surface of the substrate 100. The module coupling member 700 may couple the side surfaces of two adjacent screen modules of the plurality of screen modules 500-1 to 500-4 arranged in a lattice form, thereby implementing the multi-screen display device. The module coupling member 700 may be formed of an adhesive or a double-sided tape which enables a relatively thin thickness, for minimizing a space between two adjacent screen modules of the plurality of screen modules 500-1 to 500-4.

    [0205] In each of the plurality of screen modules 500-1 to 500-4, a maximum distance L between the second unit pixel UP2 and the outer surface of the substrate 100 may be half "P/2" or less of the reference pixel pitch P at which the plurality of first unit pixels UP1 are arranged. Therefore, a maximum distance between second unit pixels UP2 of two adjacent screen modules of which side surfaces are coupled to each other with the module coupling member 700 between the two adjacent screen modules may be equal to or less than the reference pixel pitch P. In other words, a pixel pitch between the second unit pixels UP2 of two adjacent screen modules may be equal to or less than the reference pixel pitch P at which the first unit pixels UP1 respectively provided in the plurality of screen modules 500-1 to 500-4 are arranged. Therefore, an area where a dark portion caused by a boundary portion between two adjacent screen modules of the screen modules 500-1 to 500-4 occurs is minimized or removed, and thus, an image where a sense of discontinuity of a whole screen is minimized may be displayed.

    [0206] The housing 600 may support a rear edge of each of the plurality of screen modules 500-1 to 500-4 and may cover a rear surface of the plurality of screen modules 500-1 to 500-4. The housing 600 may include a housing plate 610, covering the rear surface of each of the plurality of screen modules 500-1 to 500-4, and a housing side wall 630 which is provided vertical to the housing plate 610 and supports the rear edge of each of the plurality of screen modules 500-1 to 500-4.

    [0207] The housing plate 610 may be configured as one body covering the whole rear surface of each of the plurality of screen modules 500-1 to 500-4.

    [0208] The housing plate 610 may be configured with a plurality of division plates to overlap the rear surface of each of the plurality of screen modules 500-1 to 500-4.

    [0209] The housing side wall 630 may be installed vertical to a top of the housing plate 610 overlapping the rear edge of each of the plurality of screen modules 500-1 to 500-4 and may individually support the rear edge of each of the plurality of screen modules 500-1 to 500-4. In this case, the housing side wall 630 may support the rear edge of each of the plurality of screen modules 500-1 to 500-4 through a module supporting member 650. Here, the module supporting member 650 may be an elastic member, a foam pad, a double-sided tape, or the like.

    [0210] In addition, the housing 600 may include a plurality of module housings including the housing plate 610 and the housing side wall 630. Each of the plurality of housing modules may individually support the rear edges of the plurality of screen modules 500-1 to 500-4 and may cover the rear surfaces of the plurality of screen modules 500-1 to 500-4. In this case, the housing 600 may include a housing coupling member 800 provided between the plurality of module housings. The housing coupling member 800 may be inserted into a space between adjacent module housings and may be fixed to the housing plate 610 of each of adjacent module housings by a fastening member such as a bolt, a screw, and/or the like.

    [0211] In addition, the multi-screen display device may further include an integration control board 900 and an image signal generator 910 mounted on the integration control board 900.

    [0212] The integration control board 900 may be disposed in an accommodating space provided on the rear surface of each of the plurality of screen modules 500-1 to 500-4 by the housing 600. The integration control board 900 may be connected to the control board 250 of each of the plurality of screen modules 500-1 to 500-4 through at least one signal cable 930.

    [0213] The image signal generator 910 may be mounted on the integration control board 900. The image signal generator 910 may receive a raw image signal supplied from an external host driving system and may generate a module-based input image signal corresponding to each of images which are to be respectively displayed by display devices of the plurality of screen modules 500-1 to 500-4, based on the received raw image signal. That is, the image signal generator 910 may receive all resolution information, including a first display area AA1 and a second display area AA2, about each of the plurality of screen modules 500-1 to 500-4, divide the raw image signal according to the resolution information about each module to generate the module-based input image signal, and supply the module-based input image signal to a corresponding screen module of the plurality of screen modules 500-1 to 500-4. Therefore, each of the plurality of screen modules 500-1 to 500-4 may display a module-based image corresponding to module-based panel image data, based on the input image signal supplied from the image signal generator 910.

    [0214] As described above, since the multi-screen display device according to the unclaimed informative example includes the screen modules 500-1 to 500-4 configured with the light emitting diode display device according to the embodiments of the present invention, an area where a dark portion caused by a boundary portion between two adjacent screen modules of the screen modules 500-1 to 500-4 occurs is minimized or removed, and thus, an image where a sense of discontinuity of a whole screen is minimized may be displayed.

    [0215] FIG. 16A is a multi-screen display device of the related art

    [0216] FIG. 16B is a multi-screen display device according to an unclaimed informative example.

    [0217] First, referring to FIG. 16A, in the related art multi-screen display device, since an image is displayed on only a display area AA of each of a plurality of display devices, it can be seen that due to a bezel area BA based on a front case of each of the plurality of display devices, a dark portion occurs in a boundary portion between display devices coupled to each other, and a disconnected image caused by the dark portion of the boundary portion is displayed in a whole screen.

    [0218] On the other hand, referring to FIG. 16B, in the multi-screen display device according to the unclaimed informative example, since a pixel pitch between second unit pixels of two adjacent screen modules of which side surfaces are coupled to each other is equal to or less than a reference pixel pitch of a first unit pixel, it can be seen that an area where a dark portion caused by a boundary portion between a plurality of screen modules occurs is minimized or removed, and thus, an image where a sense of discontinuity of a whole screen is minimized is displayed.

    [0219] As a result, even in a case where side surfaces of a plurality of screen modules are coupled to each other in a lattice form, the multi-screen display device may display one image where a sense of discontinuity of a whole screen is minimized, thereby enhancing a degree of viewing immersion of a user for an image displayed on a large-size screen.

    [0220] As described above, according to the unclaimed informative example, a light emitting diode display device having a bezel width suitable for minimizing a boundary portion between display devices coupled to each other in a multi-screen display device is provided, and alignment precision and productivity are enhanced in a mounting (or transfer) process for a micro light emitting device.

    [0221] Moreover, according to the unclaimed informative example, one image where a sense of discontinuity of a whole screen is minimized is displayed even in a case where side surfaces of a plurality of screen modules are coupled to each other in a lattice form, thereby enhancing a degree of viewing immersion of a user for an image displayed on a large-size screen.


    Claims

    1. A light emitting diode display device comprising:

    a substrate (100) including a first display area (AA1) and a second display area (AA2) surrounding the first display area (AA1);

    a plurality of first unit pixels (UP1) in the first display area (AA1), the plurality of first unit pixels (UP1) each including a plurality of subpixels (SP1, SP2, SP3) each including a micro light emitting device (150); and

    a plurality of second unit pixels (UP2) in the second display area (AA2) overlapping an edge of the substrate (100), each of the plurality of second unit pixels (UP2) having a size less than a size of each of the plurality of first unit pixels (UP1), each one of the plurality of second unit pixels (UP2) including the plurality of subpixels (SP1, SP2, SP3);

    wherein the plurality of first unit pixels (UP1) each comprises a first subpixel (SP1), a second subpixel (SP2) and a third subpixel (SP3),

    the plurality of second unit pixels (UP2) each comprises a first subpixel (SP1), a second subpixel (SP2) and a third subpixel (SP3);

    the first to third subpixel (SP1, SP2, SP3) of each of the plurality of first and second unit pixels (UP2) each comprises:

    a pixel circuit (PC) and a reflective layer (101) arranged on the substrate (100), the pixel circuit including a driving thin film transistor, TFT, (T2);

    an interlayer insulation layer (105) covering the pixel circuit (PC) and the reflective layer (101);

    a passivation layer (110) covering the interlayer insulation layer (105);

    a concave portion (130) provided concavely from a top (110a) of the passivation layer (110) to have a certain depth (D1), the concave portion (130) accommodating the micro light emitting device (150) including a first electrode (E1) and a second electrode (E2);

    the reflective layer (101) being arranged between a floor surface of the concave portion (130) and the substrate (100) to overlap an emission area including the micro light emitting device (150);

    a planarization layer (160) covering the micro light emitting device (150) accommodated in the concave portion (130) and the passivation layer (110);

    a pixel electrode (PE) arranged on a top (160a) of the planarization layer (160) overlapping the driving TFT (T2) and the first electrode (E1) of the micro light emitting device (150), wherein the pixel electrode (PE) is electrically connected to a source electrode (SE) of the driving TFT (T2) through a first circuit contact hole (CCH1) which is non overlapping with the concave portion (130), the first circuit contact hole (CCH1) being configured to pass through the interlayer insulation layer (105), the passivation layer (110) and the planarization layer (160), and wherein the pixel electrode (PE) is further electrically connected to the first electrode (E1) of the micro light emitting device (150) through a first electrode contact hole (ECH1) arranged in the planarization layer (160); and

    a common electrode (CE) arranged on the top (160a) of the planarization layer (160) overlapping the second electrode (E2) of the micro light emitting device (150) and a common power line (CPL), wherein the common power line (CPL) is included in the light emitting diode display device, is arranged on the substrate (100) and is covered by the interlayer insulation layer (105) and wherein the common electrode (CE) is electrically connected to the common power line (CPL) through a second circuit contact hole (CCH2) which is non overlapping with the concave portion (130), the second circuit contact hole (CCH2) being configured to pass through the interlayer insulation layer (105), the passivation layer (110) and the planarization layer (160), and wherein the common electrode (CE) is further electrically connected to the second electrode (E2) of the micro light emitting device (150) through a second electrode contact hole (ECH2) arranged in the planarization layer (160); and

    a transparent buffer layer (170) covering the planarization layer (160),

    wherein each of the pixel electrode (PE) and the common electrode (CE) is provided between the planarization layer (160) and the transparent buffer layer (170).


     
    2. The light emitting diode display device of claim 1, wherein:

    the concave portion (130) of the second subpixel (SP2) is provided in a center portion of a corresponding unit pixel (UP1, UP2) which includes the second subpixel (SP2),

    the concave portion (130) of the first subpixel (SP1) is provided adjacent to the concave portion (130) of the second subpixel (SP2) with respect to a center portion of the first subpixel (SP1), and

    the concave portion (130) of the third subpixel (SP3) is provided adjacent to the concave portion (130) of the second subpixel (SP2) with respect to a center portion of the third subpixel (SP3).


     
    3. The light emitting diode display device of any one of claims 1 to 2, wherein the plurality of first unit pixels (UP1) are arranged at a reference pixel pitch (P), and in each of the plurality of second unit pixels (UP2), a distance between a center portion of the concave portion (130) of each of the plurality of second unit pixels (UP2) and a side surface of the substrate (100) is half or less of the reference pixel pitch (P).
     
    4. The light emitting diode display device of claim 2, wherein the concave portions (130) respectively provided in the first to third subpixels (SP1, SP2, SP3) have different depths (D1, D2, D3), and/or wherein the concave portions (130) respectively provided in the first to third subpixels (SP1, SP2, SP3) comprise a single cavity.
     
    5. The light emitting diode display device of claim 1, further comprising: a side sealing member (107) covering a side surface of the substrate (100) and a side surface of the transparent buffer layer (170).
     
    6. The light emitting diode display device of claim 1, further comprising: a color filter (CF1, CF2, CF3) on the transparent buffer layer (170), the color filter (CF1, CF2, CF3) overlapping the micro light emitting device (150) disposed in the concave portion (130),
    wherein the micro light emitting device (150) is configured to emit white light.
     
    7. The light emitting diode display device of claim 6, further comprising:

    a wavelength conversion layer (180) between the transparent buffer layer (170) and the color filter (CF1, CF2, CF3),

    wherein the wavelength conversion layer (180) comprises a phosphor or a quantum dot.


     
    8. The light emitting diode display device of any one of claims 1 to 7, further comprising an adhesive member (120) disposed between the micro light emitting device (150) and the passivation layer (110) and between the planarization layer (160) and the passivation layer (110),
    wherein the micro light emitting device (150) is adhered to the adhesive member (120).
     


    Ansprüche

    1. Leuchtdioden Anzeigeeinrichtung, umfassend:

    ein Substrat (100) mit einem ersten Anzeigebereich (AA1) und einem zweiten Anzeigebereich (AA2), der den ersten Anzeigebereich (AA1) umgibt;

    eine Mehrzahl von ersten Einheitspixeln (UP1) in dem ersten Anzeigebereich (AA1), wobei die Mehrzahl von ersten Einheitspixeln (UP1) jeweils eine Mehrzahl von Subpixeln (SP1, SP2, SP3) enthält, die jeweils eine Mikro-Licht emittierende Einrichtung (150) enthalten; und

    eine Mehrzahl von zweiten Einheitspixeln (UP2) in dem einen Rand des Substrats (100) überlappenden zweiten Anzeigebereich (AA2), wobei jedes der Mehrzahl von zweiten Einheitspixeln (UP2) eine Größe hat, die geringer ist als eine Größe jedes der Mehrzahl von ersten Einheitspixeln (UP1), wobei jedes der Mehrzahl von zweiten Einheitspixeln (UP2) die Mehrzahl von Subpixeln (SP1, SP2, SP3) enthält;

    wobei jedes der Mehrzahl von ersten Einheitspixels (UP1) ein erstes Subpixel (SP1), ein zweites Subpixel (SP2) und ein drittes Subpixel (SP3) umfasst,

    wobei jedes der Mehrzahl von zweiten Einheitspixel (UP2) ein erstes Subpixel (SP1), ein zweites Subpixel (SP2) und ein drittes Subpixel (SP3) umfasst;

    wobei das erste bis dritte Subpixel (SP1, SP2, SP3) jedes der Mehrzahl von ersten und zweiten Einheitspixeln (UP2) jeweils umfasst:

    eine Pixelschaltung (PC) und eine reflektierende Schicht (101), die auf dem Substrat (100) angeordnet sind, wobei die Pixelschaltung einen Treiber Dünnschichttransistor, TFT, (T2) enthält;

    eine Zwischenschicht-Isolierschicht (105), die die Pixelschaltung (PC) und die reflektierende Schicht (101) bedeckt;

    eine Passivierungsschicht (110), die die Zwischenschicht-Isolierschicht (105) bedeckt;

    einen konkaven Abschnitt (130), der konkav von einer Oberseite (110a) der Passivierungsschicht (110) ausgeht, um eine bestimmte Tiefe (D1) zu haben, wobei der konkave Abschnitt (130) die Mikro-Licht emittierende Einrichtung (150), die eine erste Elektrode (E1) und eine zweite Elektrode (E2) aufweist, aufnimmt;

    wobei die reflektierende Schicht (101) zwischen einer Bodenfläche des konkaven Abschnitts (130) und dem Substrat (100) angeordnet ist, um einen Emissionsbereich zu überlappen, der die Mikro-Licht emittierende Einrichtung (150) enthält;

    eine Planarisierungsschicht (160), die die in dem konkaven Abschnitt (130) untergebrachte Mikro-Licht emittierende Einrichtung (150) und die Passivierungsschicht (110) bedeckt;

    eine Pixelelektrode (PE), die auf einer Oberseite (160a) der Planarisierungsschicht (160) angeordnet ist, und den Treiber TFT (T2) und die erste Elektrode (E1) der Mikro-Licht emittierenden Einrichtung (150) überlappt, wobei die Pixelelektrode (PE) mit einer Source-Elektrode (SE) des Treiber TFT (T2) durch ein erstes Schaltungskontaktloch (CCH1) elektrisch verbunden ist, das mit dem konkaven Abschnitt (130) nicht überlappt, wobei das erste Schaltungskontaktloch (CCH1) so konfiguriert ist, dass es durch die Zwischenschicht-Isolierschicht (105), die Passivierungsschicht (110) und die Planarisierungsschicht (160) hindurchgeht, und wobei die Pixelelektrode (PE) ferner mit der ersten Elektrode (E1) der Mikro-Licht emittierenden Einrichtung (150) durch ein in der Planarisierungsschicht (160) angeordnetes erstes Elektrodenkontaktloch (ECH1) elektrisch verbunden ist; und

    eine gemeinsame Elektrode (CE), die auf der Oberseite (160a) der Planarisierungsschicht (160) angeordnet ist und die zweite Elektrode (E2) der Mikro-Licht emittierenden Einrichtung (150) und eine gemeinsame Stromversorgungsleitung (CPL) überlappt, wobei die gemeinsame Stromleitung (CPL) die in der Leuchtdioden Anzeigeeinrichtung enthalten ist, auf dem Substrat (100) angeordnet ist und von der Zwischenschicht-Isolierschicht (105) bedeckt ist und wobei die gemeinsame Elektrode (CE) mit der gemeinsamen Stromversorgungsleitung (CPL) durch ein nicht mit dem konkaven Abschnitt (130) überlappendes zweites Schaltungskontaktloch (CCH2) elektrisch verbunden ist, wobei das zweite Schaltungskontaktloch (CCH2) so konfiguriert ist, dass es durch die Zwischenschicht-Isolationsschicht (105), die Passivierungsschicht (110) und die Planarisierungsschicht (160) hindurchgeht, und wobei die gemeinsame Elektrode (CE) ferner mit der zweiten Elektrode (E2) der Mikro-Licht emittierenden Einrichtung (150) durch ein in der Planarisierungsschicht (160) angeordnetes zweites Elektrodenkontaktloch (ECH2) elektrisch verbunden ist; und

    eine transparente Pufferschicht (170), die die Planarisierungsschicht (160) bedeckt,

    wobei sowohl die Pixelelektrode (PE) als auch die gemeinsame Elektrode (CE) zwischen der Planarisierungsschicht (160) und der transparenten Pufferschicht (170) vorgesehen ist.


     
    2. Leuchtdioden Anzeigeeinrichtung nach Anspruch 1, wobei:

    der konkave Abschnitt (130) des zweiten Subpixels (SP2) in einem mittleren Abschnitt eines entsprechenden Einheitspixels (UP1, UP2) vorgesehen ist, welches das zweite Subpixel (SP2) enthält,

    der konkave Abschnitt (130) des ersten Subpixels (SP1) benachbart zu dem konkaven Abschnitt (130) des zweiten Subpixels (SP2) in Bezug auf einen Mittelabschnitt des ersten Subpixels (SP1) angeordnet ist, und

    der konkave Abschnitt (130) des dritten Subpixels (SP3) angrenzend an den konkaven Abschnitt (130) des zweiten Subpixels (SP2) in Bezug auf einen Mittelabschnitt des dritten Subpixels (SP3) angeordnet ist.


     
    3. Leuchtdioden Anzeigeeinrichtung nach einem der Ansprüche 1 bis 2, wobei die Mehrzahl von ersten Einheitspixeln (UP1) in einem Referenzpixelabstand (P) angeordnet sind und in jedem der Mehrzahl von zweiten Einheitspixeln (UP2) ein Abstand zwischen einem Mittelabschnitt des konkaven Abschnitts (130) eines jeden der Mehrzahl von zweiten Einheitspixel (UP2) und einer Seitenfläche des Substrats (100) die Hälfte oder weniger des Referenzpixelabstands (P) beträgt.
     
    4. Leuchtdioden Anzeigeeinrichtung nach Anspruch 2, wobei die konkaven Abschnitte (130), die jeweils in den ersten bis dritten Subpixeln (SP1, SP2, SP3) angeordnet sind, unterschiedliche Tiefen (D1, D2, D3) aufweisen, und/oder wobei die konkaven Abschnitte (130), die jeweils in den ersten bis dritten Subpixeln (SP1, SP2, SP3) angeordnet sind, einen einzigen Hohlraum umfassen.
     
    5. Leuchtdioden Anzeigeeinrichtung nach Anspruch 1, ferner umfassend: ein seitliches Abdichtungselement (107), das eine Seitenfläche des Substrats (100) und eine Seitenfläche der transparenten Pufferschicht (170) abdeckt.
     
    6. Leuchtdioden Anzeigeeinrichtung nach Anspruch 1, ferner umfassend: einen Farbfilter (CF1, CF2, CF3) auf der transparenten Pufferschicht (170), wobei der Farbfilter (CF1, CF2, CF3) die in dem konkaven Abschnitt (130) angeordnete Mikro-Licht emittierende Einrichtung (150) überlappt,
    wobei die Mikro-Licht emittierende Einrichtung (150) konfiguriert ist, um weißes Licht zu emittieren.
     
    7. Leuchtdioden Anzeigeeinrichtung nach Anspruch 6, ferner umfassend

    eine Wellenlängenumwandlungsschicht (180) zwischen der transparenten Pufferschicht (170) und dem Farbfilter (CF1, CF2, CF3),

    wobei die Wellenlängenumwandlungsschicht (180) einen Leuchtstoff oder ein Quantenpunkt (engl.: quantum dot) umfasst.


     
    8. Leuchtdioden Anzeigeeinrichtung nach einem der Ansprüche 1 bis 7, ferner umfassend ein Klebeelement (120), das zwischen der Mikro-Licht emittierenden Einrichtung (150) und der Passivierungsschicht (110) und zwischen der Planarisierungsschicht (160) und der Passivierungsschicht (110) angeordnet ist,
    wobei die Mikro-Licht emittierende Einrichtung (150) an das Klebeelement (120) geklebt ist.
     


    Revendications

    1. Dispositif d'affichage à diode électroluminescente comprenant :

    un substrat (100) comprenant une première zone d'affichage (AA1) et une seconde zone d'affichage (AA2) entourant la première zone d'affichage (AA1) ;

    une pluralité de premiers pixels unitaires (UP1) dans la première zone d'affichage (AA1), la pluralité de premiers pixels (UP1) comprenant chacun une pluralité de sous-pixels (SP1, SP2, SP3) comprenant chacun un micro-dispositif électroluminescent (150) ; et

    une pluralité de seconds pixels unitaires (UP2) dans la seconde zone d'affichage (AA2) chevauchant un bord du substrat (100), chacun de la pluralité de seconds pixels unitaires (UP2) ayant une taille inférieure à une taille de chacun de la pluralité de premiers pixels unitaires (UP1), chacun de la pluralité de seconds pixels unitaires (UP2) comprenant la pluralité de sous-pixels (SP1, SP2, SP3) ;

    dans lequel la pluralité de premier pixels unitaires (UP1) comprennent chacun un premier sous-pixel (SP1), un deuxième sous-pixel (SP2) et un troisième sous-pixel (SP3),

    la pluralité de seconds pixels unitaires (UP2) comprennent chacun un premier sous-pixel (SP1), un deuxième sous-pixel (SP2) et un troisième sous-pixel (SP3) ;

    les premiers aux troisièmes sous-pixels (SP1, SP2, SP3) de chacun de la pluralité des premiers et seconds pixels unitaires (UP2) comprennent chacun :

    un circuit de pixel (PC) et une couche réfléchissante (101) disposés sur le substrat (100), le circuit de pixel comprenant un transistor à couches minces TFT de commande (T2) ;

    une couche isolante intermédiaire (105) recouvrant le circuit de pixel (PC) et la couche réfléchissante (101) ;

    une couche de passivation (110) recouvrant la couche isolante intermédiaire (105) ;

    une partie concave (130) disposée de manière concave depuis une partie supérieure (110a) de la couche de passivation (110) pour présenter une certaine profondeur (D1), la partie concave (130) logeant le micro-dispositif électroluminescent (150) comprenant une première électrode (E1) et une seconde électrode (E2) ;

    la couche réfléchissante (101) étant disposée entre une surface inférieure de la partie concave (130) et le substrat (100) pour chevaucher une zone d'émission comprenant le micro-dispositif électroluminescent (150) ;

    une couche de planarisation (160) recouvrant le micro-dispositif électroluminescent (150) logé dans la partie concave (130) et la couche de passivation (110) ;

    une électrode de pixel (PE) disposée sur une partie supérieure (160a) de la couche de planarisation (160) chevauchant le TFT de commande (T2) et la première électrode (E1) du micro-dispositif électroluminescent (150), dans lequel l'électrode de pixel (PE) est connectée électriquement à une électrode de source (SE) du TFT de commande (T2) par l'intermédiaire d'un premier trou de contact de circuit (CCH1) qui ne chevauche pas la partie concave (130), le premier trou de contact de circuit (CCH1) étant configuré pour passer à travers la couche d'isolation intermédiaire (105), la couche de passivation (110) et la couche de planarisation (160), et dans lequel l'électrode de pixel (PE) est en outre connectée électriquement à la première électrode (E1) du micro-dispositif électroluminescent (150) par l'intermédiaire d'un premier trou de contact d'électrode (ECH1) disposé dans la couche de planarisation (160) ; et

    une électrode commune (CE) disposée sur la partie supérieure (160a) de la couche de planarisation (160) chevauchant la seconde électrode (E2) du micro-dispositif électroluminescent (150) et une ligne d'alimentation commune (CPL), dans lequel la ligne d'alimentation commune (CPL) est comprise dans le dispositif d'affichage à diode électroluminescente, est disposée sur le substrat (100) et est recouverte par la couche d'isolation intermédiaire (105) et dans lequel l'électrode commune (CE) est connectée électriquement à la ligne d'alimentation commune (CPL) par l'intermédiaire d'un second trou de contact de circuit (CCH2) qui ne chevauche pas la partie concave (130), le second trou de contact de circuit (CCH2) étant configuré pour passer à travers la couche d'isolation intermédiaire (105), la couche de passivation (110) et la couche de planarisation (160), et dans lequel l'électrode commune (CE) est en outre connectée électriquement à la seconde électrode (E2) du micro-dispositif électroluminescent (150) par l'intermédiaire d'un second trou de contact d'électrode (ECH2) disposé dans la couche de planarisation (160) ; et

    une couche tampon transparente (170) recouvrant la couche de planarisation (160),

    dans lequel chacune de l'électrode de pixel (PE) et de l'électrode commune (CE) est disposée entre la couche de planarisation (160) et la couche tampon transparente (170).


     
    2. Dispositif d'affichage à diode électroluminescente selon la revendication 1, dans lequel :

    la partie concave (130) du deuxième sous-pixel (SP2) est disposée dans une partie centrale d'un pixel unitaire (UP1, UP2) correspondant qui comprend le deuxième sous-pixel (SP2),

    la partie concave (130) du premier sous-pixel (SP1) est disposée adjacente à la partie concave (130) du deuxième sous-pixel (SP2) par rapport à une partie centrale du premier sous-pixel (SP1), et

    la partie concave (130) du troisième sous-pixel (SP3) est disposée adjacente à la partie concave (130) du deuxième sous-pixel (SP2) par rapport à une partie centrale du troisième sous-pixel (SP3).


     
    3. Dispositif d'affichage à diode électroluminescente selon l'une quelconque des revendications 1 ou 2, dans lequel la pluralité de premiers pixels unitaires (UP1) sont disposés à un pas de pixel de référence (P), et dans chacun de la pluralité de seconds pixels unitaires (UP2), une distance entre une partie centrale de la partie concave (130) de chacun de la pluralité de seconds pixels unitaires (UP2) et une surface latérale du substrat (100) est égale à la moitié ou moins du pas de pixel de référence (P).
     
    4. Dispositif d'affichage à diode électroluminescente selon la revendication 2, dans lequel les parties concaves (130) respectivement disposées dans les premiers à troisièmes sous-pixels (SP1, SP2, SP3) ont des profondeurs (D1, D2, D3) différentes, et/ou dans lequel les parties concaves (130) respectivement disposées dans les premiers à troisièmes sous-pixels (SP1, SP2, SP3) comprennent une seule cavité.
     
    5. Dispositif d'affichage à diode électroluminescente selon la revendication 1, comprenant en outre: un élément de scellement latéral (107) recouvrant une surface latérale du substrat (100) et une surface latérale de la couche tampon transparente (170).
     
    6. Dispositif d'affichage à diode électroluminescente selon la revendication 1, comprenant en outre: un filtre de couleur (CF1, CF2, CF3) sur la couche tampon transparente (170), le filtre de couleur (CF1, CF2, CF3) chevauchant le micro-dispositif électroluminescent (150) disposé dans la partie concave (130),
    dans lequel le micro-dispositif électroluminescent (150) est configuré pour émettre de la lumière blanche.
     
    7. Dispositif d'affichage à diode électroluminescente selon la revendication 6, comprenant en outre :

    une couche de conversion de longueur d'onde (180) entre la couche tampon transparente (170) et le filtre de couleur (CF1, CF2, CF3),

    dans lequel la couche de conversion de longueur d'onde (180) comprend un phosphore ou un point quantique.


     
    8. Dispositif d'affichage à diode électroluminescente selon l'une quelconque des revendications 1 à 7, comprenant en outre un élément adhésif (120) disposé entre le micro-dispositif électroluminescent (150) et la couche de passivation (110) et entre la couche de planarisation (160) et la couche de passivation (110),
    dans lequel le micro-dispositif électroluminescent (150) est collé à l'élément adhésif (120).
     




    Drawing






































    Cited references

    REFERENCES CITED IN THE DESCRIPTION



    This list of references cited by the applicant is for the reader's convenience only. It does not form part of the European patent document. Even though great care has been taken in compiling the references, errors or omissions cannot be excluded and the EPO disclaims all liability in this regard.

    Patent documents cited in the description