(19)
(11)EP 3 456 860 A3

(12)EUROPEAN PATENT APPLICATION

(88)Date of publication A3:
08.05.2019 Bulletin 2019/19

(43)Date of publication A2:
20.03.2019 Bulletin 2019/12

(21)Application number: 18196541.9

(22)Date of filing:  28.10.2013
(51)Int. Cl.: 
C23C 16/455  (2006.01)
C23C 16/48  (2006.01)
C30B 29/06  (2006.01)
C30B 25/14  (2006.01)
C23C 16/458  (2006.01)
(84)Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

(30)Priority: 26.10.2012 JP 2012237109

(62)Application number of the earlier application in accordance with Art. 76 EPC:
13848894.5 / 2913844

(71)Applicant: Applied Materials, Inc.
Santa Clara, CA 95054 (US)

(72)Inventors:
  • OKABE, Akira
    Ohmura-shi, Nagasaki 856-0022 (JP)
  • MORI, Yoshinobu
    Ohmura-shi, Nagasaki 856-0022 (JP)

(74)Representative: Zimmermann & Partner Patentanwälte mbB 
Postfach 330 920
80069 München
80069 München (DE)

  


(54)EPITAXIAL GROWTH APPARATUS


(57) An epitaxial growth apparatus is provided having an improved growing speed. This epitaxial growth apparatus is provided with: a reaction chamber that is demarcated by means of a substrate placing section having a substrate placed thereon, a ceiling plate having light permeability, and sidewall sections; a heating means, which is disposed outside of the reaction chamber, and which heats the substrate through the ceiling plate, said substrate being placed in the reaction chamber; and a reaction gas introducing means, which introduces into the reaction chamber a reaction gas in parallel to the horizontal direction of the substrate. The distance between the center of the ceiling plate and the substrate placing section is less than 10 mm.