(19)
(11)EP 3 461 006 A3

(12)EUROPEAN PATENT APPLICATION

(88)Date of publication A3:
26.06.2019 Bulletin 2019/26

(43)Date of publication A2:
27.03.2019 Bulletin 2019/13

(21)Application number: 18190829.4

(22)Date of filing:  24.08.2018
(51)International Patent Classification (IPC): 
H03K 17/06(2006.01)
H03K 17/0812(2006.01)
H03K 3/57(2006.01)
(84)Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated Extension States:
BA ME
Designated Validation States:
KH MA MD TN

(30)Priority: 20.09.2017 CN 201710858572

(71)Applicant: Nuctech Company Limited
Beijing 100084 (CN)

(72)Inventors:
  • LIU, Yaohong
    Haidian District, Beijing 100084 (CN)
  • ZHAO, Ziran
    Haidian District, Beijing 100084 (CN)
  • LIU, Jinsheng
    Haidian District, Beijing 100084 (CN)
  • JIA, Wei
    Haidian District, Beijing 100084 (CN)
  • LI, Wei
    Haidian District, Beijing 100084 (CN)
  • YAN, Xinshui
    Haidian District, Beijing 100084 (CN)

(74)Representative: Brunner, John Michael Owen 
Carpmaels & Ransford LLP One Southampton Row
London WC1B 5HA
London WC1B 5HA (GB)

  


(54)PROTECTION CIRCUIT, OSCILLATION COMPENSATION CIRCUIT AND POWER SUPPLY CIRCUIT IN SOLID STATE PULSE MODULATOR


(57) The present disclosure provides a gate protection circuit for an Insulated Gate Bipolar Transistor (IGBT), the IGBT being used as a switch device in a solid state pulse modulator based on the MARX generator principle, the gate protection circuit including: a voltage regulator configured to supply a stable voltage to an emitter of the IGBT with respect to the ground for a gate of the IGBT.







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