(19)
(11)EP 3 528 284 A3

(12)EUROPEAN PATENT APPLICATION

(88)Date of publication A3:
27.11.2019 Bulletin 2019/48

(43)Date of publication A2:
21.08.2019 Bulletin 2019/34

(21)Application number: 19159427.4

(22)Date of filing:  28.12.2010
(51)Int. Cl.: 
H01L 25/065  (2006.01)
H01L 25/18  (2006.01)
H01L 27/146  (2006.01)
H01L 25/16  (2006.01)
H01L 25/07  (2006.01)
H01L 27/14  (2006.01)
H04N 5/369  (2011.01)
(84)Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

(30)Priority: 16.11.2010 JP 2010255934
08.01.2010 JP 2010002979

(62)Application number of the earlier application in accordance with Art. 76 EPC:
10842233.8 / 2528093

(71)Applicant: Sony Corporation
Tokyo 108-0075 (JP)

(72)Inventors:
  • SUKEGAWA, Shunichi
    Tokyo 108-0075 (JP)
  • FUKUSHIMA, Noriyuki
    Tokyo 108-0075 (JP)

(74)Representative: Müller Hoffmann & Partner 
Patentanwälte mbB St.-Martin-Strasse 58
81541 München
81541 München (DE)

  


(54)SEMICONDUCTOR DEVICE, SOLID-STATE IMAGE SENSOR AND CAMERA SYSTEM


(57) The present invention relates to a semiconductor device, a solid-state image sensor and a camera system capable of reducing the influence of noise at a connection between chips without a special circuit for communication and reducing the cost as a result. The semiconductor device includes: a first chip 11; and a second chip 12, wherein the first chip 11 and the second chip 12 are bonded to have a stacked structure, the first chip 11 has a high-voltage transistor circuit mounted thereon, the second chip 12 has mounted thereon a low-voltage transistor circuit having lower breakdown voltage than the high-voltage transistor circuit, and wiring between the first chip and the second chip is connected through a via formed in the first chip.