(19)
(11)EP 3 573 089 A3

(12)EUROPEAN PATENT APPLICATION

(88)Date of publication A3:
18.03.2020 Bulletin 2020/12

(43)Date of publication A2:
27.11.2019 Bulletin 2019/48

(21)Application number: 19176455.4

(22)Date of filing:  24.05.2019
(51)Int. Cl.: 
H01L 21/28  (2006.01)
H01L 29/788  (2006.01)
H01L 29/423  (2006.01)
H01L 27/11526  (2017.01)
(84)Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated Extension States:
BA ME
Designated Validation States:
KH MA MD TN

(30)Priority: 25.05.2018 JP 2018100718
17.04.2019 JP 2019078870

(71)Applicant: Asahi Kasei Microdevices Corporation
Tokyo 100-0006 (JP)

(72)Inventors:
  • Gunji, Tomohiro
    Tokyo 100-0006 (JP)
  • Tsushima, Yuukou
    Tokyo 100-0006 (JP)

(74)Representative: Hoffmann Eitle 
Patent- und Rechtsanwälte PartmbB Arabellastraße 30
81925 München
81925 München (DE)

  


(54)NONVOLATILE STORAGE ELEMENT


(57) The object of the present invention is to provide a nonvolatile storage element capable of suppressing retention degradation.
A nonvolatile storage element M1 is provided with a semiconductor substrate 9A and a floating gate FG1 provided above the semiconductor substrate 9A, in which the floating gate FG1 has an area of 30 µm2 or more.