(19)
(11)EP 3 599 646 A3

(12)EUROPEAN PATENT APPLICATION

(88)Date of publication A3:
01.04.2020 Bulletin 2020/14

(43)Date of publication A2:
29.01.2020 Bulletin 2020/05

(21)Application number: 19187576.4

(22)Date of filing:  22.07.2019
(51)International Patent Classification (IPC): 
H01L 29/786(2006.01)
H01L 29/49(2006.01)
H01L 21/3213(2006.01)
H01L 29/66(2006.01)
H01L 21/02(2006.01)
(84)Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated Extension States:
BA ME
Designated Validation States:
KH MA MD TN

(30)Priority: 23.07.2018 JP 2018137401
18.07.2019 JP 2019132421

(71)Applicant: Ricoh Company, Ltd.
Tokyo 143-8555 (JP)

(72)Inventors:
  • KUSAYANAGI, Minehide
    Tokyo, 143-8555 (JP)
  • UEDA, Naoyuki
    Tokyo, 143-8555 (JP)
  • NAKAMURA, Yuki
    Tokyo, 143-8555 (JP)
  • ABE, Yukiko
    Tokyo, 143-8555 (JP)
  • MATSUMOTO, Shinji
    Tokyo, 143-8555 (JP)
  • SONE, Yuji
    Tokyo, 143-8555 (JP)
  • SAOTOME, Ryoichi
    Tokyo, 143-8555 (JP)
  • ARAE, Sadanori
    Tokyo, 143-8555 (JP)

(74)Representative: SSM Sandmair 
Patentanwälte Rechtsanwalt Partnerschaft mbB Joseph-Wild-Straße 20
81829 München
81829 München (DE)

  


(54)METAL OXIDE, FIELD-EFFECT TRANSISTOR, AND METHOD FOR PRODUCING THE SAME


(57) Method for producing field-effect transistor including source electrode and drain electrode, gate electrode, active layer, and gate insulating layer, the method including etching the gate insulating layer, wherein the gate insulating layer is metal oxide including A-element and at least one selected from B-element and C-element, the A-element is at least one selected from Sc, Y, Ln (lanthanoid), Sb, Bi, and Te, the B-element is at least one selected from Ga, Ti, Zr, and Hf, the C-element is at least one selected from Group 2 elements in periodic table, etching solution A is used when at least one selected from the source electrode and the drain electrode, the gate electrode, and the active layer is formed, and etching solution B that is etching solution having same type as the etching solution A is used when the gate insulating layer is etched.







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