(19)
(11)EP 3 618 102 A3

(12)EUROPEAN PATENT APPLICATION

(88)Date of publication A3:
11.03.2020 Bulletin 2020/11

(43)Date of publication A2:
04.03.2020 Bulletin 2020/10

(21)Application number: 19192280.6

(22)Date of filing:  19.08.2019
(51)International Patent Classification (IPC): 
H01L 21/683(2006.01)
(84)Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated Extension States:
BA ME
Designated Validation States:
KH MA MD TN

(30)Priority: 03.09.2018 JP 2018164373

(71)Applicant: Shin-Etsu Chemical Co., Ltd.
Tokyo (JP)

(72)Inventors:
  • YASUDA, Hiroyuki
    Annaka-shi, Gunma (JP)
  • SUGO, Michihiro
    Annaka-shi, Gunma (JP)

(74)Representative: Ter Meer Steinmeister & Partner 
Patentanwälte mbB Nymphenburger Straße 4
80335 München
80335 München (DE)

  


(54)METHOD FOR PRODUCING THIN WAFER


(57) A method for producing a thin wafer includes: separating the support body from the laminate by irradiating a wafer laminate, which includes a support body, an adhesive layer formed on the support body, and a wafer laminated with a surface thereof including a circuit plane facing the adhesive layer, with light from a side of the support body of the wafer laminate; and after separating, removing a resin layer remaining on the wafer from the wafer by peeling, wherein the adhesive layer includes only a resin layer A with a light-blocking property, and a resin layer B including a thermosetting silicone resin or a non-silicone thermoplastic resin in this order from the side of the support body.







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