(19)
(11)EP 3 675 182 A3

(12)EUROPEAN PATENT APPLICATION

(88)Date of publication A3:
29.07.2020 Bulletin 2020/31

(43)Date of publication A2:
01.07.2020 Bulletin 2020/27

(21)Application number: 20154558.9

(22)Date of filing:  31.05.2017
(51)International Patent Classification (IPC): 
H01L 31/0296(2006.01)
H01L 31/18(2006.01)
H01L 31/073(2012.01)
(84)Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

(30)Priority: 31.05.2016 US 201662343397 P

(62)Application number of the earlier application in accordance with Art. 76 EPC:
17729672.0 / 3465773

(71)Applicant: First Solar, Inc
Tempe, AZ 85281 (US)

(72)Inventors:
  • RING, Kenneth
    Perrysburg, OH 43551 (US)
  • HUBER, William H.
    Perrysburg, OH 43551 (US)
  • PENG, Hongying
    Perrysburg, OH 43551 (US)
  • GLOECKLER, Markus
    Perrysburg, OH 43551 (US)
  • MOR, Gopal
    Perrysburg, OH 43551 (US)
  • LIAO, Feng
    Perrysburg, OH 43551 (US)
  • ZHAO, Zhibo
    Perrysburg, OH 43551 (US)
  • LOS, Andrei
    Perrysburg, OH 43551 (US)

(74)Representative: D Young & Co LLP 
120 Holborn
London EC1N 2DY
London EC1N 2DY (GB)

  


(54)AG-DOPED PHOTOVOLTAIC DEVICES AND METHOD OF MAKING


(57) A doped photovoltaic device is presented. The photovoltaic device includes a semiconductor absorber layer or stack disposed between a front contact and a back contact. The absorber layer comprises cadmium, selenium, and tellurium doped with Ag, and optionally with Cu. The Ag dopant may be added to the absorber in amounts ranging from 5 x 1015/cm3 to 2.5 x 1017/cm3 via any of several methods of application before, during, or after deposition of the absorber layer. The photovoltaic device has improved Fill Factor and PMAX at higher PT (= ISC VOC product) values, e.g. about 160 W, which results in improved conversion efficiency compared to a device not doped with Ag. Improved PT may result from increased ISC, increased VOC, or both.







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