Description  Claims  Drawing  Cited references 

US4912064A   [0003] 
US4866005A   [0003] 
USREISSUE34861A   [0003] 
US5679153A   [0003]  [0048] 

Ultrahigh quality silicon carbide single crystals   [0007] 
Growth of low micropipe density SiC wafers   [0008] 
Hexagonal voids and the formation of micropipes during SiC sublimation growth   [0009] 
European Conference on Silicon Carbide and Related Materials   [0048]