Description     Claims     Drawing  

US5457709A   [0004] 
US5745516A   [0004] 
US6751244B   [0004] 
US6922427B   [0004]  [0013] 
JPH8279647B   [0004] 
JP2008177366A   [0004]  [0045] 
JP2008060396A   [0004] 
JPH104242B   [0004]  [0072] 

Continuous Wave Operation of a Mid-Infrared Semiconductor Laser at Room Temperature   [0005] 
High-Power Continuous-Wave Operation of a 6 µm Quantum-Cascade Laser at Room Temperature   [0005] 
Continuous-Wave Operation of λ∼4.8µm Quantum-Cascade Lasers at Room Temperature   [0005] 
A Multiwavelength Semiconductor Laser   [0005] 
Heterogeneous High-Performance Quantum-Cascade Laser Sources for Broad-Band Tuning   [0005] 
High-Performance Bound-To-Continuum Quantum-Cascade Lasers for Broad-Gain Applications   [0005] 
Broadband Tuning of External Cavity Bound-to-Continuum Quantum-Cascade Lasers   [0005] 
High-Performance Superlattice Quantum Cascade Lasers   [0005] 
Influence of doping on the performance of terahertz quantum cascade lasers   [0005] 
Continuous-wave operation of terahertz quantum-cascade lasers above liquid-nitrogen temperature   [0005] 
Science   [0006] 
Appl. Phys. Lett.   [0006] 
Appl. Phys. Lett.   [0006] 
Nature   [0009] 
IEEE J. Quantum Electron.   [0014]