Description  Claims  Drawing  Cited references 

WO2009119357A   [0017] 
EP1612866A   [0019] 
JP2008084942A   [0020] 

Highly Reliable 250W High Electron Mobility Transistor Power Amplifier   [0018] 
Gallium Nitride Based High Power Heterojuncion Field Effect Transistors: process Development and Present Status at USCB   [0018] 
Can InAlN/GaN be an alternative to high power/high temperature AlGaN/GaN devices?   [0018] 
Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance   [0018] 
Recessed-Gate Structure Approach Toward Normally Off High-Voltage AlGaN/GaN HEMT for Power Electronics Applications   [0018] 
Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High-κ Gate Dielectrics   [0018] 
A Normally-off GaN FET with High Threshold Voltage Uniformity Using A Novel Piezo Neutralization Technique   [0018] 
Over 100A Operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage   [0018]