Description     Claims     Drawing  

EP2413385A2   [0004] 
FR2904730A1   [0006] 
WO2012106814A1   [0007] 

On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy   [0001] 
N-face GaN nanorods: Continuous-flux MOVPE growth and morphological Properties   [0002] 
Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells   [0003] 
InGaN/GaN nanorod array white light-emitting diode   [0005] 
High efficiency green, yellow, and amber emission from InGaN/GaN dot-in-a-wire heterostructures on Si(111)   [0008] 
High performance InGaN/GaN dot-in-a-wire light emitting diodes on Si(111)   [0009]