| On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy
| [0001]
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| N-face GaN nanorods: Continuous-flux MOVPE growth and morphological Properties
| [0002]
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| Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells
| [0003]
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| InGaN/GaN nanorod array white light-emitting diode
| [0005]
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| High efficiency green, yellow, and amber emission from InGaN/GaN dot-in-a-wire heterostructures on Si(111)
| [0008]
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| High performance InGaN/GaN dot-in-a-wire light emitting diodes on Si(111)
| [0009]
|