Description  Claims  Drawing  Cited references 

US2007032040A1   [0018] 
US6548382B   [0032] 
WO2010002515A   [0033] 

Enhanced high resistivity SOI wafers for RF applications   [0018] 
New substrate passivation method dedicated to high resistivity SOI wafer fabrication with increased substrate resistivity   [0018] 
RF performance of a commercial SOI technology transferred onto a passivated HR silicon substrate   [0018] 
Identification of RF harmonic distortion on Si substrates and its reduction using a trap-rich layer   [0018] 
Semi-insulating silicon for microwave devices   [0029] 
The Role of Penetrant Structure on the Transport and Mechanical Properties of a Thermoset Adhesive   [0071]