Beschreibung     Ansprüche     Zeichnung  

WO2008026175A1   [0006] 
US7569872B1   [0007] 
US5091336A   [0008] 
US20080017895A1   [0009] 

Complementary Vertical Bipolar Transistor Process Using High-Energy Ion Implantation   [0005] 
A Flexible, Low Cost, High Performance SiGe:C BiCMOS Process with a One-Mask HBT Module   [0034]