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US61813720   [0002] 
US20110079727A   [0004] 
US20100127314A   [0004] 
US5914499A   [0007] 
US20050078725A   [0007] 
US7943406B   [0007] 
JPS61199675B   [0007] 

Recent Advances in Telecommunications Avalanche Photodiodes   [0003] 
Evolution and prospects for single-photon avalanche diodes and quenching circuits   [0003] 
The Digital Silicon Photomultiplier - System Architecutre and Performance Evaluation   [0004] 
The SiPM Physics and Technology - a Review   [0004] 
Guard Ring Structures for Silicon Photomultipliers   [0004] 
Performance of 1-mm2 Silicon Photomultiplier   [0004] 
Electronics for single photon avalanche diode arrays   [0004] 
Simulation of Silicon Photomultiplier Signals   [0004] 
A Planar InP/InGaAs Avalanche Photodiode with Floating Guard Ring and Double Diffused Junction   [0005] 
Breakdown Voltage in Power Semiconductor Devices   [0005] 
Power Semiconductor Devices   [0006] 
Proton-Implantation-Isolated 4H-SiC Avalanche Photodiodes   [0007] 
Planar InAs photodiodes fabricated using He ion implantation   [0007] 
Proton-Implantation-Isolated Separate Absorption Charge and Multiplication 4H-SiC Avalanche Photodiodes   [0007] 
Proton isolated In0.2Ga0.8As/GaAs strained layer superlattice avalanche photodiode   [0007] 
Electrical isolation of InGaP by proton and helium ion irradiation   [0007] 
on Implantation for Isolation of III-V Semiconductors   [0007] 
Implant Isolation of Silicon Two-Dimensional Electron Gases at 4.2K   [0041]