| Recent Advances in Telecommunications Avalanche Photodiodes
| [0003]
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| Evolution and prospects for single-photon avalanche diodes and quenching circuits
| [0003]
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| The Digital Silicon Photomultiplier - System Architecutre and Performance Evaluation
| [0004]
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| The SiPM Physics and Technology - a Review
| [0004]
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| Guard Ring Structures for Silicon Photomultipliers
| [0004]
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| Performance of 1-mm2 Silicon Photomultiplier
| [0004]
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| Electronics for single photon avalanche diode arrays
| [0004]
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| Simulation of Silicon Photomultiplier Signals
| [0004]
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| A Planar InP/InGaAs Avalanche Photodiode with Floating Guard Ring and Double Diffused Junction
| [0005]
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| Breakdown Voltage in Power Semiconductor Devices
| [0005]
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| Power Semiconductor Devices
| [0006]
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| Proton-Implantation-Isolated 4H-SiC Avalanche Photodiodes
| [0007]
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| Planar InAs photodiodes fabricated using He ion implantation
| [0007]
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| Proton-Implantation-Isolated Separate Absorption Charge and Multiplication 4H-SiC Avalanche Photodiodes
| [0007]
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| Proton isolated In0.2Ga0.8As/GaAs strained layer superlattice avalanche photodiode
| [0007]
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| Electrical isolation of InGaP by proton and helium ion irradiation
| [0007]
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| on Implantation for Isolation of III-V Semiconductors
| [0007]
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| Implant Isolation of Silicon Two-Dimensional Electron Gases at 4.2K
| [0041]
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