Beschreibung     Ansprüche  

JP2008066128B   [0004] 
US8734674B1   [0005] 

Nano-porous Si/C composites for anode material of lithium-ion batteries   [0003] 
Nano Silicon carbide: a new lithium-insertion anode material on the horizon   [0006] 
Enhanced Lithiation of Doped 6H Silicon Carbide (0001) via High Temperature Vacuum Growth of Epitaxial Graphene   [0007] 
Wide Bandgap Semiconductors - Nanowires of p- and n-type Silicon Carbide   [0008] 
Sol-Gel Silicon Carbide for Photonic Applications   [0009] 
Enhanced Lithiation of Doped 6H Silicon Carbide (0001) via High Temparature Vacuum Growth of Epitaxial Graphene   [0010]