Abstract  Description  Claims  Drawing  Search report  Cited references 

JP4164562B   [0004] 
JP2010074148A   [0127] 

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors   [0005] 
High electron mobility thin-film transistors based on solution-processed semiconducting metal oxide heterojunctions and quasi-superlattices   [0027] 
Free Energy of Formation of Binary Compounds   [0049] 
JANAF Thermochemical Tables, NSRDS-NBS 37   [0049] 
High electron mobility thin-film transistors based on solution-processed semiconducting metal oxide heterojunctions and quasi-superlattices   [0054]