Description  Revendications  Dessins  Références citées 

EP1290721A   [0012] 
WO2013001014A   [0012] 
US8405064B2   [0015] 
EP2767620A1   [0016] 
US2006191474A   [0017] 
WO0229873A   [0017] 
US20060191474A   [0036] 

High electron mobility transistor based on a GaN-AlGaN heterojunction   [0003] 
Stress control in GaN grown on silicon (111) by metalorganic vapor phase eptitaxy   [0017]