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2010-10-30T19:26:03+01:00
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Jouve S.A., EPO - Publication - KB, TaggedPDF v1.27
EP-0307598-A3-19890823
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EP-0307598-A3-19890823
A method for making a bipolar semiconductor device having silicide contacts (30) which is compatible with the processing steps used in the fabrication of MOS devices. The present invention includes the use of sidewall spacers (28) to limit the self-aligned implants of the extrinsic base (24) and the silicide contact (30). The device is annealed so that the diffusion of the polysilicon layer (22) which forms the emitter (38) may be controlled. Since the emitter (38) size may be controlled, the emitter (38) to base (18) contact area may be reduced resulting in improved device performance.
A method for making a bipolar semiconductor device having silicide contacts (30) which is compatible with the processing steps used in the fabrication of MOS devices. The present invention includes the use of sidewall spacers (28) to limit the self-aligned implants of the extrinsic base (24) and the silicide contact (30). The device is annealed so that the diffusion of the polysilicon layer (22) which forms the emitter (38) may be controlled. Since the emitter (38) size may be controlled, the emitter (38) to base (18) contact area may be reduced resulting in improved device performance.
en
European Patent Office
EP0307598
EP 0307598
H01L 21/60
H01L 21/31
H01L 21/00
Method of fabricating a bipolar semiconductor device with silicide contacts
Method of fabricating a bipolar semiconductor device with silicide contacts - European Patent Office - EP 0307598 A3
Method of fabricating a bipolar semiconductor device with silicide contacts - European Patent Office - EP 0307598 A3
Adobe PDF Library 8.0
"EP0307598"; "EP 0307598"; "H01L 21/60"; "H01L 21/31"; "H01L 21/00"; "Method of fabricating a bipolar semiconductor device with silicide contacts"
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0307598
A3
1989-08-23
88112430
1988-08-01
US
95782
1987-09-14
H01L 21/60
H01L 21/31
H01L 21/00
MOTOROLA INC.
Alvarez, Antonio R.
Kirchgessner, James A.
Hudson, Peter David et al
Method of fabricating a bipolar semiconductor device with silicide contacts
Verfahren zum Herstellen einer Bipolar-Halbleitervorrichtung mit Kontakten aus Kieselerde
Method of fabricating a bipolar semiconductor device with silicide contacts
Procédé de fabrication d'un dispositif semi-conducteur bipolaire avec des contacts en siliciure
A method for making a bipolar semiconductor device having silicide contacts (30) which is compatible with the processing steps used in the fabrication of MOS devices. The present invention includes the use of sidewall spacers (28) to limit the self-aligned implants of the extrinsic base (24) and the silicide contact (30). The device is annealed so that the diffusion of the polysilicon layer (22) which forms the emitter (38) may be controlled. Since the emitter (38) size may be controlled, the emitter (38) to base (18) contact area may be reduced resulting in improved device performance.
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