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Jouve S.A., EPO - Publication - KB, TaggedPDF v1.27
EP-0329569-A2-19890823
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EP-0329569-A2-19890823
A semiconductor device comprises :a insulating film (26, 25) having first part (26) and a second part (25), the second part (25) being thinner than the first part (26); and a polycrystalline silicon film having a first part (23) arranged over the first part (26) of the insulating film and a second part (24) arranged over the second part (25) of the insulating film, the second part (24) of the polycrystalline silicon film having a lower concentration of impurities than that of the first part of polycrystalline silicon film.
A semiconductor device comprises :a insulating film (26, 25) having first part (26) and a second part (25), the second part (25) being thinner than the first part (26); and a polycrystalline silicon film having a first part (23) arranged over the first part (26) of the insulating film and a second part (24) arranged over the second part (25) of the insulating film, the second part (24) of the polycrystalline silicon film having a lower concentration of impurities than that of the first part of polycrystalline silicon film.
en
European Patent Office
EP0329569
EP 0329569
H01L 29/60
H01L 27/10
Semiconductor device with a thin insulating film
Semiconductor device with a thin insulating film - European Patent Office - EP 0329569 A2
Semiconductor device with a thin insulating film - European Patent Office - EP 0329569 A2
Adobe PDF Library 8.0
"EP0329569"; "EP 0329569"; "H01L 29/60"; "H01L 27/10"; "Semiconductor device with a thin insulating film"
1.4
1
B
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EP
0329569
A2
1989-08-23
89400463
1989-02-17
JP
3434688
1988-02-17
H01L 29/60
H01L 27/10
FUJITSU LIMITED
Ema, Taiji
Shirai, Kazunari
Semiconductor device with a thin insulating film
Halbleiteranordnung mit einer dünnen isolierenden Schicht
Semiconductor device with a thin insulating film
Dispositif semi-conducteur ayant une mince couche isolante
A semiconductor device comprises :a insulating film (26, 25) having first part (26) and a second part (25), the second part (25) being thinner than the first part (26); and a polycrystalline silicon film having a first part (23) arranged over the first part (26) of the insulating film and a second part (24) arranged over the second part (25) of the insulating film, the second part (24) of the polycrystalline silicon film having a lower concentration of impurities than that of the first part of polycrystalline silicon film.
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