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Jouve S.A., EPO - Publication - KB, TaggedPDF v1.27
EP-0296702-A3-19890823
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EP-0296702-A3-19890823
The invention relates to a method of forming amorphous, photoconductive, and semiconductive silicon films on a substrate by the vapor phase thermal decomposition of a fluorohydridodisilane or a mixture of fluorohydridodisilanes. The invention is useful for the protection of surfaces including electronic devices.
The invention relates to a method of forming amorphous, photoconductive, and semiconductive silicon films on a substrate by the vapor phase thermal decomposition of a fluorohydridodisilane or a mixture of fluorohydridodisilanes. The invention is useful for the protection of surfaces including electronic devices.
en
European Patent Office
EP0296702
EP 0296702
H01L 21/205
C23C 16/24
Method of forming semiconducting amorphous silicon films from the thermal decompositon of fluorohydridodisilanes
Method of forming semiconducting amorphous silicon films from the thermal decompositon of fluorohydridodisilanes - European Patent Office - EP 0296702 A3
Method of forming semiconducting amorphous silicon films from the thermal decompositon of fluorohydridodisilanes - European Patent Office - EP 0296702 A3
Adobe PDF Library 8.0
"EP0296702"; "EP 0296702"; "H01L 21/205"; "C23C 16/24"; "Method of forming semiconducting amorphous silicon films from the thermal decompositon of fluorohydridodisilanes"
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0296702
A3
1989-08-23
88303468
1988-04-18
US
64641
1987-06-22
H01L 21/205
C23C 16/24
DOW CORNING CORPORATION
Sharp, Kenneth George
D'Errico, John Joseph
Lewin, John Harvey et al
Method of forming semiconducting amorphous silicon films from the thermal decompositon of fluorohydridodisilanes
Verfahren und Herstellung von halbleitenden, aus amorphem Silizium bestehenden Schichten durch thermische Zersetzung von Fluorhydriddisilanen
Method of forming semiconducting amorphous silicon films from the thermal decompositon of fluorohydridodisilanes
Méthode pour former des films de silicium amorphe semi-conducteurs par décomposition thermique de fluorohydridodisilanes
The invention relates to a method of forming amorphous, photoconductive, and semiconductive silicon films on a substrate by the vapor phase thermal decomposition of a fluorohydridodisilane or a mixture of fluorohydridodisilanes. The invention is useful for the protection of surfaces including electronic devices.
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