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2010-12-10T17:18:52+01:00
2010-12-02T02:01:24Z
2010-12-10T17:18:52+01:00
Jouve S.A., TaggedPDF v1.27
EP-0199300-A3-19881123
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EP-0199300-A3-19881123
In the present invention, a thick resist layer is formed on a thin metal film and the resist layer is dry-etched by using a Si02 mask formed selectively on the resist layer, and the thick wiring metal layer is formed by plating method with using the dry-etched resist layer having perpendicular side wall as a mask, thereby to form a low resistance and fine pattern wiring metal layer.
In the present invention, a thick resist layer is formed on a thin metal film and the resist layer is dry-etched by using a Si02 mask formed selectively on the resist layer, and the thick wiring metal layer is formed by plating method with using the dry-etched resist layer having perpendicular side wall as a mask, thereby to form a low resistance and fine pattern wiring metal layer.
en
European Patent Office
EP0199300
EP 0199300
H01L 21/312
Method for making a mask having perpendicular side wall and method for making a patterned metal layer by using the former method
Method for making a mask having perpendicular side wall and method for making a patterned metal layer by using the former method - European Patent Office - EP 0199300 A3
Method for making a mask having perpendicular side wall and method for making a patterned metal layer by using the former method - European Patent Office - EP 0199300 A3
Adobe PDF Library 8.0
"EP0199300"; "EP 0199300"; "H01L 21/312"; "Method for making a mask having perpendicular side wall and method for making a patterned metal layer by using the former method"
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B
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EP
0199300
A3
1988-11-23
86105370
1986-04-18
JP
8491385
1985-04-19
H01L 21/312
Matsushita Electronics Corporation
Kanazawa, Kunihiko
Kazumura, Masaru
Dr. Elisabeth JungDr. Jürgen SchirdewahnDipl.-Ing. Claus Gernhardt
Method for making a mask having perpendicular side wall and method for making a patterned metal layer by using the former method
Verfahren zum Herstellen einer Maske mit einer senkrechten Seite und zum Erzeugen eines Musters in einer Metallschicht unter Verwendung dieses Verfahrens
Method for making a mask having perpendicular side wall and method for making a patterned metal layer by using the former method
Procédé de fabrication d'un masque ayant une paroi verticale et méthode pour la production d'un dessin dans une couche métallique par utilisation de ce procédé
In the present invention, a thick resist layer is formed on a thin metal film and the resist layer is dry-etched by using a Si02 mask formed selectively on the resist layer, and the thick wiring metal layer is formed by plating method with using the dry-etched resist layer having perpendicular side wall as a mask, thereby to form a low resistance and fine pattern wiring metal layer.
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