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2010-10-18T18:45:12+01:00
2010-12-01T19:03:59+01:00
Jouve S.A., EPO - Publication - KB, TaggedPDF v1.27
EP-0590651-A2-19940406
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EP-0590651-A2-19940406
A power supply system (15) incorporated in a dynamic random access memory device distributes a step-down power voltage (Vint) and a boosted voltage (Vboot) to a sense amplifier unit (13a) and a word line driver (12a) for allowing switching transistors of the memory cells to transfer the step-down voltage level to the storage capacitor without any voltage drop in read-out and write-in modes, and the switching transistors and the storage capacitors are subjected to inspections through a burn-in testing process before delivery from the manufacturing factory so as to actualize potential failure; however, either switching transistors or storage capacitors are insufficiently stressed in the burn-in testing process, and the power supply system changes the ratio of the boosted voltage to the step-down power voltage between the read-out and write-in modes and the burn-in testing process so that the switching transistors and the storage capacitors are sufficiently stressed.
A power supply system (15) incorporated in a dynamic random access memory device distributes a step-down power voltage (Vint) and a boosted voltage (Vboot) to a sense amplifier unit (13a) and a word line driver (12a) for allowing switching transistors of the memory cells to transfer the step-down voltage level to the storage capacitor without any voltage drop in read-out and write-in modes, and the switching transistors and the storage capacitors are subjected to inspections through a burn-in testing process before delivery from the manufacturing factory so as to actualize potential failure; however, either switching transistors or storage capacitors are insufficiently stressed in the burn-in testing process, and the power supply system changes the ratio of the boosted voltage to the step-down power voltage between the read-out and write-in modes and the burn-in testing process so that the switching transistors and the storage capacitors are sufficiently stressed.
en
European Patent Office
EP0590651
EP 0590651
G11C 29/00
Dynamic random access memory device having power supply system appropriately biasing switching transistors and storage capacitors in burn-in testing process
Dynamic random access memory device having power supply system appropriately biasing switching transistors and storage capacitors in burn-in testing process - European Patent Office - EP 0590651 A2
Dynamic random access memory device having power supply system appropriately biasing switching transistors and storage capacitors in burn-in testing process - European Patent Office - EP 0590651 A2
Adobe PDF Library 8.0
"EP0590651"; "EP 0590651"; "G11C 29/00"; "Dynamic random access memory device having power supply system appropriately biasing switching transistors and storage capacitors in burn-in testing process"
1.4
1
B
26
EP
0590651
A2
1994-04-06
93115753
1993-09-29
JP
26232392
1992-09-30
G11C 29/00
NEC CORPORATION
Tsujimoto, Akira
Glawe, Delfs, Moll & Partner
Dynamic random access memory device having power supply system appropriately biasing switching transistors and storage capacitors in burn-in testing process
Dynamische RAM-Einrichtung mit einem Stromversorgungssystem mit angepasster Vorspannung für Transistoren und Kondensatoren in einem Einbrenntestverfahren
Dynamic random access memory device having power supply system appropriately biasing switching transistors and storage capacitors in burn-in testing process
Dispositif de mémoire dynamique à accès aléatoire comportant un système d'alimentation polarisant de manière appropriée des transistors de commutation et des condensateurs lors d'une procédure de test de vieillissement
A power supply system (15) incorporated in a dynamic random access memory device distributes a step-down power voltage (Vint) and a boosted voltage (Vboot) to a sense amplifier unit (13a) and a word line driver (12a) for allowing switching transistors of the memory cells to transfer the step-down voltage level to the storage capacitor without any voltage drop in read-out and write-in modes, and the switching transistors and the storage capacitors are subjected to inspections through a burn-in testing process before delivery from the manufacturing factory so as to actualize potential failure; however, either switching transistors or storage capacitors are insufficiently stressed in the burn-in testing process, and the power supply system changes the ratio of the boosted voltage to the step-down power voltage between the read-out and write-in modes and the burn-in testing process so that the switching transistors and the storage capacitors are sufficiently stressed.
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