Manufacturing process for a monolithic semiconductor device comprising at least one transistor of an integrated control circuit and one power transistor integrated on the same chip

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(11)

EP 0 322 040 A3

(12)	EUROPEAN PATENT APPLICATION

(88)	Date of publication A3:
	07.02.1990 Bulletin 1990/06

(43)	Date of publication A2:
	28.06.1989 Bulletin 1989/26

(21)	Application number: 88202898.8

(22)	Date of filing: 16.12.1988

(51)	International Patent Classification (IPC)⁴: H01L 21/82, H01L 21/76, H01L 27/08

(84)	Designated Contracting States:
	DE FR GB NL

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Priority:

22.12.1987 IT 663087

(71)	Applicant: SGS-THOMSON MICROELECTRONICS S.r.l.
	I-20041 Agrate Brianza (Milano) (IT)

(72)	Inventors:
	Zambrano, Raffaele Mercato San Severino Sa (IT) Musumeci, Salvatore Riposto Ct. (IT)

(74)	Representative: Arena, Giovanni
	Viale Certosa 135 20151 Milano 20151 Milano (IT)

(56)

References cited: :

(54)	Manufacturing process for a monolithic semiconductor device comprising at least one transistor of an integrated control circuit and one power transistor integrated on the same chip

(57) The device uses the horizontal insulating region and the buried layer as the power transistor base and emitter respectively. An epitaxial growth is interposed between the two diffusions needed to form the aforesaid regions and those needed to create the base and the emitter of the transistor of the integrated control circuit.

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