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(11) | EP 0 322 040 A3 |
(12) | EUROPEAN PATENT APPLICATION |
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(54) | Manufacturing process for a monolithic semiconductor device comprising at least one transistor of an integrated control circuit and one power transistor integrated on the same chip |
(57) The device uses the horizontal insulating region and the buried layer as the power
transistor base and emitter respectively. An epitaxial growth is interposed between
the two diffusions needed to form the aforesaid regions and those needed to create
the base and the emitter of the transistor of the integrated control circuit. |