(19)
(11) EP 1 073 085 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
09.04.2003 Bulletin 2003/15

(43) Date of publication A2:
31.01.2001 Bulletin 2001/05

(21) Application number: 00402144.0

(22) Date of filing: 27.07.2000
(51) International Patent Classification (IPC)7: H01J 9/02
(84) Designated Contracting States:
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
Designated Extension States:
AL LT LV MK RO SI

(30) Priority: 29.07.1999 JP 21547999

(71) Applicant: SONY CORPORATION
Tokyo (JP)

(72) Inventor:
  • Mika, Ishiwata
    Shinagawa-ku, Tokyo (JP)

(74) Representative: Thévenet, Jean-Bruno et al
Cabinet Beau de Loménie 158, rue de l'Université
75340 Paris Cédex 07
75340 Paris Cédex 07 (FR)

   


(54) Method of manufacturing cold cathode field emission device and method of manufacturing cold cathode field emission display


(57) A method of manufacturing a cold cathode field emission device, which comprises the steps of;
  • (A) forming a cathode electrode (11) on a support (10),
  • (B) forming an insulating layer (12) on the cathode electrode (11) and the support (10),
  • (C) forming a gate electrode (13A) on the insulating layer (12),
  • (D) forming an opening portion (14) having a bottom portion where the cathode electrode (11) is exposed, at least in the insulating layer (12),
  • (E) forming an electron emitting electrode composed of an electric conductive composite (17) containing electric conductive particles and a binder on the cathode electrode (11) exposed in the bottom portion of the opening portion (14), and
  • (F) removing the binder in a surface layer portion of the electron emitting electrode to expose the electric conductive particles on the surface of the electron emitting electrode (17A).






Search report