BACKGROUND OF THE INVENTION
(Field of the Invention)
[0001] The present invention relates to a mechanical deformation amount sensor such as an
acceleration sensor, a pressure sensor or the like.
(Description of the Prior Art)
[0002] As a sensor for detecting magnitude of a physical quantity to be detected, a mechanical
deformation amount sensor is known in which mechanical deformation amount of a sensor
structure caused by application of the physical quantity thereto is taken as an index
indicative of the magnitude of the physical quantity so as to be converted into an
electrical signal. Its typical examples include a semiconductor acceleration sensor
and a semiconductor pressure sensor. In the semiconductor acceleration sensor and
the semiconductor pressure sensor, the sensor structure is formed by a semiconductor
substrate and a phenomenon in which when a stress is applied to a semiconductor crystal,
electric resistance of the semiconductor crystal changes, namely, piezoelectric resistance
is utilized such that the stress is fetched as the electrical signal.
[0003] Meanwhile, a strain sensor employing a carbon nanotube is proposed in, for example,
Japanese Patent Laid-Open Publication No, 11-241903 (1999). This known strain sensor is a molded item having a sheetlike or any other predetermined
shape, in which electrically conductive fine particles of the carbon nanotube or the
like are dispersed in polymer formed by, for example, ethylene-vinyl acetate copolymer
(EVA). In this known strain sensor, a strain amount is detected by measuring a change
of electric resistance, which is caused by extension due to an external force.
[0004] In the above described conventional sensor utilizing the piezoelectric resistance,
when the sensor structure is formed by working a silicon substrate, the piezoelectric
resistance can be formulated by semiconductor diffusion technology in the course of
the process for forming the sensor structure, so that the sensor structure can be
manufactured by a series of semiconductor substrate working processes advantageously.
However, since rate of change of the piezoelectric resistance corresponding to the
amount of mechanical deformation of the sensor structure, namely, quantity of change
of its electrical conductivity is limited, it is quite difficult to obtain higher
sensitivity beyond potential power of the piezoelectric resistance.
[0005] Meanwhile, in the above mentioned known strain sensor, since the molded item having
the sheetlike or any other predetermined shape obtained by dispersing the electrically
conductive fine particles of the carbon nanotube or the like in the polymer is used
as a detective resistance element, the combined resistance is increased by contact
resistance of the particles, thereby resulting in such a disadvantage as drop of sensitivity.
Furthermore, in case the molded item having the sheetlike or any other predetermined
shape is used as a mechanical deformation amount detection element, the molded item
should be mounted on a structure in which a desired mechanical deformation amount
can be detected. However, since it is difficult to mount the molded item on a mechanical
deformation portion of the order of several microns, such a problem arises that the
strain sensor as a whole becomes large in size.
SUMMARY OF THE INVENTION
[0006] Accordingly, an essential object of the present invention is to provide, with a view
to eliminating the above mentioned drawbacks of prior art, a mechanical deformation
amount sensor such as an acceleration sensor, a pressure sensor or the like, which
is capable of achieving higher sensitivity than prior art.
[0007] In order to accomplish this object of the present invention, a mechanical deformation
amount sensor of the present invention includes a sensor structure which is formed
by a semiconductor substrate or an insulating substrate and integrally includes a
deformation portion deformable, when a physical quantity to be detected is applied
to the sensor structure, due to the physical quantity and a support portion for supporting
the deformation portion. A carbon nanotube resistance element is provided on the deformation
portion so as to be mechanically deformed in response to deformation of the deformation
portion. A wiring pattern is formed in a pattern on the sensor structure so as to
be connected to the carbon nanotube resistance element. When a voltage is applied
to the carbon nanotube resistance element via the wiring pattern, a change of electrical
conductivity of the carbon nanotube resistance element upon mechanical deformation
of the carbon nanotube resistance element is fetched as an electrical signal.
[0008] By the above described arrangement of the mechanical deformation amount sensor of
the present invention, the physical quantity can be detected based on electrical characteristics
of the carbon nanotube at higher sensitivity than prior art. Namely, when the physical
quantity to be detected by the sensor is applied to the sensor structure in a state
where the voltage is applied to the carbon nanotube resistance element via the wiring
pattern, the deformation portion is initially deformed and then; the carbon nanotube
resistance element is mechanically deformed in response to the deformation of the
deformation portion. The carbon nanotube has a property that its electrical conductivity
(electric resistance) changes upon its mechanical deformation. Since quantity of change
of its electrical conductivity is quite large in comparison with piezoelectric resistance,
electrical conductivity of the carbon nanotube resistance element changes rather greatly
upon its mechanical deformation, so that quantity of change of voltage or electric
current due to the change of the electrical conductivity becomes comparatively large
and is fetched, through the wiring pattern, as a highly sensitive electrical signal.
Since this electrical signal is used as an index indicative of magnitude of the physical
quantity to be detected and is converted into the physical quantity, the physical
quantity can be detected at high sensitivity,
[0009] In the present invention, if the deformation portion is subjected to mechanical deformation
when the physical quantity to be detected is applied to the sensor structure, the
deformation portion is not specifically restricted in shape, etc, For example, the
deformation portion can be so formed as to be thinner than the support portion and
is deformed so as to be deflected elastically when the physical quantity is applied
to the sensor structure.
[0010] Meanwhile, in the present invention, the sensor structure is preferably a so-called
micro-electro-mechanical systems (MEMS) sensor chip formed by micromachining a silicon
substrate. In the present invention employing the carbon nanotube which is a quite
minute element, the MEMS sensor chip is very advantageous for achieving both high
sensitivity and compactness. In this case, the carbon nanotube resistance element
is preferably provided on the deformation portion through an insulating film.
[0011] Meanwhile, in the present invention, the carbon nanotube resistance element is preferably
disposed such that a longitudinal direction of the carbon nanotube resistance element
is orthogonal to a direction of deformation of the deformation portion. The carbon
nanotube has a property that its electrical conductivity changes upon its deformation
in a direction orthogonal to its longitudinal direction. Since the longitudinal direction
of the carbon nanotube resistance element is orthogonal to the direction of deformation
of the deformation portion, deformation of the deformation portion is reflected most
precisely in deformation of the carbon nanotube resistance element. As a result, change
of electrical conductivity of the carbon nanotube resistance element increases accordingly,
which is advantageous for achieving high sensitivity.
[0012] Meanwhile, in the present invention, the wiring pattern may have, at its end portion
connected to the carbon nanotube resistance element, a metal electrode such that each
of opposite end portions of the carbon nanotube resistance element is covered by the
metal electrode. Thus, the carbon nanotube resistance element can be positively connected
to the wiring pattern by the metal pattern and the carbon nanotube resistance element
can be securely fixed to the deformation portion.
[0013] Meanwhile, in the present invention, a surface of the carbon nanotube resistance
element is preferably covered by an insulating coating film. This is because the insulating
coating film can not only protect the carbon nanotube resistance element but fix the
carbon nanotube resistance element to the deformation portion more securely. In this
case, the insulating coating film may be formed by a passivation film provided on
a surface of the sensor structure so as to not only protect the surface of the sensor
structure but protect and fix the carbon nanotube resistance element.
[0014] Meanwhile, in the present invention, it is preferable that a step portion is formed
on the deformation portion and the carbon nanotube resistance element is provided
on the deformation portion so as to stride over the step portion. Thus, by utilizing
a feature of the carbon nanotube that change of its electrical conductivity at its
portion having a large angle of deformation is large as compared with a case in which
the carbon nanotube resistance element is provided on a flat face, a large change
of electrical conductivity can be obtained in response to a small deformation amount
and thus, higher sensitivity can be achieved.
[0015] Meanwhile, in the present invention, it is preferable that a reference resistance
element is provided at a portion of the sensor structure other than the deformation
portion and the reference resistance element and the carbon nanotube resistance element
are connected to each other by the wiring pattern so as to form a bridge circuit.
In this case, a voltage is applied to an input terminal of the bridge circuit and
a voltage of an output terminal of the bridge circuit can be fetched as an electrical
signal corresponding to a change of electrical conductivity of the carbon nanotube
resistance element upon mechanical deformation of the carbon nanotube resistance element,
so that high sensitivity can be gained and detection accuracy is improved, In this
case, the reference resistance element is preferably formed by a carbon nanotube.
When both the detective resistance element and the reference resistance element are
identically formed by the carbon nanotubes, detection accuracy is improved further.
[0016] Meanwhile, in the present invention, the carbon nanotube resistance element is preferably
formed by a single-wall carbon nanotube. This is because change of electrical conductivity
of the single-wall carbon nanotube upon its deformation in the direction orthogonal
to its longitudinal direction is larger than that of a multi-wall carbon nanotube
advantageously for higher sensitivity. In this case, it is preferable that the carbon
nanotube resistance element is formed by a plurality of the single-wall carbon nanotubes
which are arranged side by side and are electrically connected to each other in parallel.
Thus, since scattering degrees of change of electrical conductivity of the respective
single-wall carbon nanotubes are averaged so as to be restrained, not only high sensitivity
can be gained but detection accuracy can be improved.
[0017] Furthermore, in the present invention, an acceleration sensor having an acceleration
as the physical quantity to be detected is provided as one concrete example of the
mechanical deformation amount sensor. In the acceleration sensor, the sensor structure
further includes a weight portion integrally coupled with the support portion by the
deformation portion.
[0018] Moreover, in the present invention, a pressure sensor having a fluid pressure as
the physical quantity to be detected is provided as another concrete example of the
mechanical deformation amount sensor. In the sensor structure of the pressure sensor,
the support portion is formed in a shape of a frame and the deformation portion is
formed by a diaphragm occupying an inside space of the frame of the support portion
such that the diaphragm bears the fluid pressure. In this case, the carbon nanotube
resistance element is preferably provided at a peripheral edge portion of the diaphragm.
BRIEF DESCRIPTION OF THE DRAWINGS
[0019] This object and features of the present invention will become apparent from the following
description taken in conjunction with the preferred embodiments thereof with reference
to the accompanying drawings in which:
Fig. 1 is a top plan view of a pressure sensor according to a first embodiment of
the present invention;
Fig. 2 is a sectional view taken along the line II-II in Fig. 1;
Fig. 3 is a circuit diagram of a bridge circuit for fetching a detection signal, employed
in the pressure sensor of Fig. 1 ;
Fig. 4 is a view explanatory of layout of electrodes and a metal wire in the bridge
circuit of Fig. 3;
Fig. 5 is a sectional view explanatory of one fixing layout of a carbon nanotube used
for the bridge circuit of Fig. 3;
Fig. 6 is a sectional view explanatory of another fixing layout of the carbon nanotube
of Fig. 5;
Fig. 7 is a view similar to Fig. 2, particularly showing operation of the pressure
sensor of Fig. 1;
Fig. 8 is a top plan view of a pressure sensor according to a second embodiment of
the present invention;
Fig. 9 is a sectional view taken along the line IX-IX in Fig. 8;
Fig. 10 is a view similar to Fig. 9, particularly showing operation of the pressure
sensor of Fig. 8;
Fig. 11 is a top plan view of a pressure sensor according to a third embodiment of
the present invention;
Fig. 12 is a sectional view taken along the line XII-XII in Fig. 11 ;
Fig. 13 is a circuit diagram of a bridge circuit for fetching a detection signal,
employed in the pressure sensor of Fig. 11;
Fig. 14 is a view similar to Fig. 12, particularly showing operation of the pressure
sensor of Fig. 11;
Fig. 15 is a top plan view of an acceleration sensor according to a fourth embodiment
of the present invention, with its upper glass cap being removed therefrom;
Fig. 16 is a sectional view taken along the line XVI-XVI in Fig. 15, with the upper
glass cap being provided;
Fig. 17 is a view similar to Fig. 16, particularly showing operation of the acceleration
sensor of Fig. 15 ;
Fig. 18 is a top plan view of an acceleration sensor according to a fifth embodiment
of the present invention, with its upper glass cap being removed therefrom;
Fig. 19 is a sectional view taken along the line XIX-XIX in Fig. 18, with the upper
glass cap being provided;
Fig. 20 is a view similar to Fig. 19, particularly showing operation of the acceleration
sensor of Fig. 18;
Fig. 21 is a top plan view of an acceleration sensor according to a sixth embodiment
of the present invention, with its upper glass cap being removed therefrom; and
Fig. 22 is a sectional view taken along the line XXII-XXII in Fig. 21, with the upper
glass cap being provided.
[0020] Before the description of the present invention proceeds; it is to be noted that
like parts are designated by like reference numerals throughout several views of the
accompanying drawings.
DETAILED DESCRIPTION OF THE INVENTION
[0021] Hereinafter, mechanical deformation amount sensors according to embodiments of the
present invention are described with reference to the drawings.
(First embodiment)
[0022] As shown in Figs. 1 and 2, a mechanical deformation amount sensor according to a
first embodiment acts as a pressure sensor for detecting fluid pressure, in this embodiment,
a sensor structure 1 is a so-called micro-electro-mechanical systems (MEMS) sensor
chip (semiconductor pressure sensor chip) obtained by working a silicon substrate
and is constituted by a support portion 1a having a shape of a rectangular frame and
a thin-walled diaphragm 2 occupying an inside space of the frame of the support portion
1a. In this pressure sensor chip 1, the diaphragm 2 acting as a thin-walled pressure
bearing portion is formed by digging a recess 3 into a portion of a rear face of the
pressure sensor chip 1 by anisotropic etching such that a bottom wall of the recess
3, namely, the diaphragm 2 has a predetermined thickness. Thus, as shown in Fig. 1,
the support portion 1 a has three rectangular frame edges, i,e., an innermost rectangular
frame edge E1 bounding the diaphragm 2, an outermost rectangular frame edge E2 defining
an outer contour of the sensor structure 1 and an intermediate rectangular frame edge
E3 defining a contour of a mouth of the recess 3. A base 4 made of glass and having
a pressure introduction bore 5 for introducing the fluid pressure into the recess
3 is secured to the rear face of the pressure sensor chip 1. In the pressure sensor
chip 1, when the fluid pressure is introduced from the pressure introduction bore
5 into the recess 3, the diaphragm 2 is deformed so as to be deflected.
[0023] In order to fetch as an electrical signal a deformation amount of the diaphragm 2
in accordance with magnitude of the fluid pressure, carbon nanotube resistance elements
61 and 62 are provided on a front face of the diaphragm 2. Each of the carbon nanotube
resistance elements 61 and 62 is provided and fixed at a central location of each
of opposite sides of the innermost rectangular frame edge E1 of the support portion
1a in a peripheral edge portion of the diaphragm 2 such that axes of the carbon nanotube
resistance elements 61 and 62 are aligned with each other. A carbon nanotube has such
a property that when the carbon nanotube is deformed in a direction perpendicular
to an axial or longitudinal direction of the carbon nanotube, electrical conductivity
(electric resistance) of the carbon nanotube changes in accordance with the deformation
amount. On the other hand, deflective deformation of the diaphragm 2 is produced in
a thickness direction of the substrate. Hence, since the axial direction of the carbon
nanotube is orthogonal to the direction of deflective deformation of the diaphragm
2 by the above described arrangement of the carbon nanotube resistance elements 61
and 62, deflective deformation of the diaphragm 2 is efficiently transmitted to the
carbon nanotube resistance elements 61 and 62 and thus, change of electrical conductivity
of the carbon nanotube increases. Meanwhile, since the carbon nanotube resistance
elements 61 and 62 are also provided in the peripheral edge portion of the diaphragm
2, whose deflective deformation is large, deflective deformation of the diaphragm
2 is efficiently transmitted to the carbon nanotube resistance elements 61 and 62,
thereby resulting in increase of change of electrical conductivity of the carbon nanotube.
[0024] An overall length of the carbon nanotube resistance elements 61 and 62 may be placed
on the diaphragm 2. However, in this embodiment, each of the carbon nanotube resistance
elements 61 and 62 is disposed so as to stride over, at its longitudinal middle portion,
the boundary E1 of the diaphragm 2 and the support portion 1a such that a substantially
half portion of each of the carbon nanotube resistance elements 61 and 62 are placed
on the diaphragm 2. This is because the diaphragm 2 is subjected to large defective
deformation in the neighborhood of the boundary E1 of the diaphragm 2 and the support
portion 1a so as to flex.
[0025] Meanwhile, as shown in Fig. 3, a bridge circuit for fetching a detection signal as
shown in Fig. 3 is formed by the carbon nanotube resistance elements 61 and 62 and
reference resistance elements 63 and 64. Each of the reference resistance elements
63 and 64 is provided and fixed on the front face of the support portion 1 a which
is not deformed by the fluid pressure such that axes of the reference resistance elements
63 and 64 are aligned with those of the carbon nanotube resistance elements 61 and
62. Carbon nanotubes are used as material of the reference resistance elements 63
and 64. The resistance elements 61 to 64 made of the carbon nanotubes are formed so
as to have an identical electric resistance when no pressure is applied to the diaphragm
2. By using the carbon nanotubes as the material of the resistance elements 61 to
64 identically and imparting the identical electric resistance to the resistance elements
61 to 64, detection accuracy of the bridge circuit is improved.
[0026] In the bridge circuit, the carbon nanotube resistance elements 61 and 62 which are
deformed in response to deformation of the diaphragm 2 are, respectively, disposed
on a pair of the opposite sides of the innermost rectangular frame edge E1 of the
support portion 1a, while the reference resistance elements 63 and 64 are, respectively,
provided outside a pair of opposite sides of the intermediate rectangular frame edge
E3 of the support portion 1a. A DC voltage Vd is applied between a junction 8a of
the carbon nanotube resistance element 61 and the reference resistance element 64
and a junction 8b of the carbon nanotube resistance element 62 and the reference resistance
element 63 such that a potential difference between a junction 9a of the carbon nanotube
resistance element 61 and the reference resistance element 63 and a junction 9b of
the carbon nanotube resistance element 62 and the reference resistance element 64
is fetched as the detection signal.
[0027] Fig. 4 shows, as an example, a wiring pattern 7 for connecting the resistance elements
61 to 64 so as to form the bridge circuit. In this example, the wiring pattern 7 is
formed on the surface of the sensor structure 1 including the diaphragm 2, while electrode
pads for the input terminals 8a and 8b for applying the DC voltage Vd to the bridge
circuit and electrode pads for the output terminals 9a and 9b for fetching the detection
signal are provided on the surface of the support portion 1a. The wiring pattern 7
can be formed by a metal wire such as aluminum but may also be formed through diffusion
wiring by doping the silicon substrate acting as the pressure sensor chip 1. Alternatively,
the wiring pattern may be formed by combination of the above two procedures.
[0028] Fig. 5 schematically shows layout of a carbon nanotube 6 for forming the carbon nanotube
resistance elements 61 and 62 and the reference resistance elements 63 and 64. As
shown in Fig. 5, the carbon nanotube 6 is a rodlike minute structure and is connected,
at its opposite end portions, to the wiring pattern 7. In order to form the carbon
nanotube 6 at a predetermined location on the surface of the sensor structure 1, a
method in which a carbon nanotube formed already into a rodlike shape is provided
and fixed at the predetermined location and a method in which a carbon nanotube is
grown at the predetermined location on the surface of the sensor structure 1 may be
employed. In the former method, a commercially available carbon nanotube, etc. can
be used but the sensor structure 1 is minute and size of the carbon nanotube itself
is quite small, so that handling of the carbon nanotube is not so easy. Hence, the
latter method is employed preferably. In the latter method, one of metals such as
iron, nickel and cobalt or its compound is used as a catalyst and the carbon nanotube
is formed at the predetermined location by using the catalyst as a starting point.
For example, in Fig. 5, at the location for providing the carbon nanotube 6 on the
surface of the pressure sensor chip 1, ferric oxide (Fe
2O
3) is formed, as catalytic portions, at portions corresponding to opposite end portions
of the carbon nanotube 6 such that the carbon nanotube 6 is formed between the catalytic
portions by such processes as CVD and arc discharge. In order to form the catalytic
portions, resist patterning, for example, is performed on the surface of the pressure
sensor chip 1 so as to deposit, sputter, drip or spin coat the catalytic material.
Meanwhile, in order to form the carbon nanotube 6, CVD or arc discharge is performed
at a temperature of 500 to 1,000 °C while mixed gas composed of hydrocarbon gas such
as methane and hydrogen gas is delivered in a direction for forming the carbon nanotube
6.
[0029] Carbon nanotubes are roughly classified into a single-wall carbon nanotube (SWNT)
and a multi-wall carbon nanotube (MWNT). The single-wall carbon nanotube is a cylindrical
substance formed by a single graphite sheet. On the other hand, the multi-wall carbon
nanotube is a cylindrical substance formed by a plurality of graphite sheets provided
concentrically or in a scroll. The carbon nanotube 6 employed in the present invention
is preferably the single-wall carbon nanotube but may also be the multi-wall carbon
nanotube. However, since change of electrical conductivity of the single-wall carbon
nanotube upon its deformation in the direction orthogonal to the longitudinal direction
is larger than that of the multi-wall carbon nanotube, the single-wall carbon nanotube
is more advantageous for achieving high sensitivity than the multi-wall carbon nanotube.
In this embodiment, each of the resistance elements 61 to 64 employing the carbon
nanotubes 6 is formed by a plurality of single-wall carbon nanotubes which are arranged
side by side and are electrically connected to each other in parallel. As a result,
since scattering degrees of change of the electrical conductivity of the respective
single-wall carbon nanotubes are averaged so as to be restrained, not only high sensitivity
can be gained but detection accuracy can be improved.
[0030] In this embodiment, each of the opposite end portions of the carbon nanotube 6 is
covered by a metal electrode 10 extending from the wiring pattern 7 and made of aluminum
or titanium/gold. By providing the metal electrode 10, the opposite end portions of
the carbon nanotube 6 and the wiring pattern 7 can be connected to each other positively.
In addition, since the metal electrode 10 grips each of the opposite end portions
of the carbon nanotube 6, the carbon nanotube 6 is firmly fixed so as to be prevented
from being removed from the predetermined location on the surface of the chip 1.
[0031] In this embodiment, a surface of the carbon nanotube 6 may also be covered by an
insulating coating film 13 as shown in Fig. 6. The insulating coating film 13 protects
the carbon nanotube 6 and secures the carbon nanotube 6 to the pressure sensor chip
1 more firmly. The insulating coating film 13 may be provided so as to cover the carbon
nanotube 6 spottily but a passivation film provided on the surface of the pressure
sensor chip 1 may be used as the insulating coating film 13. Thus, the insulating
coating film 13 not only protects the surface of the sensor chip 1 but protects and
secures the carbon nanotube 6. As shown in Fig. 6, an insulating film 11 made of silicon
dioxide (SiO
2) or the like is provided on the surface of the pressure sensor chip 1 formed by the
silicon substrate and the carbon nanotube 6 and the metal wire of the wiring pattern
7 are provided on the insulating film 11. In case the wiring pattern 7 includes a
portion formed by diffusion wiring, the portion of diffusion wiring is disposed in
the pressure sensor chip 1 under the insulating film 11 but may be electrically conducted
to a surface of the insulating film 11 by forming a contact hole at a desired location
of the insulating film 1.
[0032] In the semiconductor pressure sensor of the first embodiment, when no fluid pressure
is introduced into the recess 3 from the pressure introduction bore 5 of the base
4, potential difference between the output terminals 9a and 9b of the bridge circuit
is zero. However, if fluid pressure is introduced into the recess 3 from the pressure
introduction bore 5 of the base 4, a central portion of the diaphragm 2 is deflected
by the fluid pressure so as to be expanded upwardly as shown in Fig. 7 and the peripheral
edge portion of the diaphragm 2 is deformed so as to be pulled obliquely upwardly.
Thus, the carbon nanotube resistance elements 61 and 62 fixed at the peripheral edge
portion of the diaphragm 2 are subjected to compressive deformation in the direction
orthogonal to the axial direction of the carbon nanotube resistance elements 61 and
62, namely, in a direction of small modulus of elasticity in response to deformation
of the peripheral edge portion of the diaphragm 2. By this compressive deformation
of the carbon nanotube resistance, elements 61 and 62, electric resistance, i.e.,
electrical conductivity between the carbon nanotube resistance elements 61 and 62
changes in accordance with amount of the compressive deformation and a potential difference
corresponding to the change of the electric resistance is generated between the output
terminals 9a and 9b of the bridge circuit. Namely, since a magnitude of this potential
difference corresponds to a magnitude of the fluid pressure applied to the diaphragm
2, the fluid pressure can be detected from this potential difference.
(Second embodiment)
[0033] Figs. 8 and 9 show a semiconductor pressure sensor according to a second embodiment
of the present invention. In the first embodiment, a surface of the pressure sensor
chip 1 including the diaphragm 2 is flat and the carbon nanotube resistance elements
61 and 62 are arranged and fixed on this flat surface of the pressure sensor chip
1. The second embodiment is designed to make the best use of such a property of a
carbon nanotube that electric resistance of the carbon nanotube changes greatly at
its location having a large angle of deformation.
[0034] Namely, in this embodiment, a step portion 12 is formed at a boundary of the peripheral
edge portion, i.e., a deformation portion of the diaphragm 2 and the support portion
1 a as shown in Fig. 9 such that a surface of the diaphragm 2 is set lower than that
of the support portion 1a surrounding the diaphragm 2. Each of the carbon nanotube
resistance elements 61 and 62 is disposed and fixed so as to longitudinally stride
over the step portion 12 and is bent from the surface of the support portion 1a to
the surface of the diaphragm 2 along a vertical surface of the step portion 12. Since
other constructions of the semiconductor pressure sensor of this embodiment are similar
to those of the pressure sensor of the first embodiment, the description is abbreviated
for the sake of brevity.
[0035] In the semiconductor pressure sensor, when fluid pressure is introduced into the
recess 3 from the pressure introduction bore 5 of the base 4, a central portion of
the diaphragm 2 is deflected by the fluid pressure so as to be expanded upwardly and
the peripheral edge portion of the diaphragm 2 is deformed so as to be pulled obliquely
upwardly as shown in Fig. 10. Thus, each of the carbon nanotube resistance elements
61 and 62 secured to the step portion 12 in the peripheral edge portion of the diaphragm
2 is subjected to compressive deformation in a direction orthogonal to its axial or
longitudinal direction, i.e., in a direction of small modulus of elasticity in response
to deformation of the peripheral edge portion of the diaphragm 2. At this time, since
a portion of each of the carbon nanotube resistance elements 61 and 62, which is disposed
at the step portion 12, is subjected to compressive deformation at a large angle,
electric resistance (electrical conductivity) between opposite ends of each of the
carbon nanotube resistance elements 61 and 62 changes greatly and thus, the potential
difference between the output terminals 9a and 9b of the bridge circuit also becomes
large. Namely, since a large-level electrical signal can be obtained by the small
deformation amount, the fluid pressure can be detected at high sensitivity.
(Third embodiment)
[0036] Figs. 11 and 12 show a semiconductor pressure sensor according to a third embodiment
of the present invention. In the first and second embodiments, the bridge circuit
is formed by providing the reference resistance elements 63 and 64. In this embodiment,
reference resistance elements 63' and 64' are provided at a central portion of a surface
of the diaphragm 2 such that an axial direction of the reference resistance elements
63' and 64' is parallel to that of the carbon nanotube resistance elements 61 and
62 disposed in the peripheral edge portion of the diaphragm 2 and a bridge circuit
shown in Fig. 13 is formed by using the reference resistance elements 63' and 64'.
The reference resistance elements 63' and 64' are constituted by carbon nanotubes.
[0037] In the semiconductor pressure sensor, when fluid pressure is introduced into the
recess 3 from the pressure introduction bore 5 of the base 4, a central portion of
the diaphragm 2 is deflected by the fluid pressure so as to be expanded upwardly and
the peripheral edge portion of the diaphragm 2 is deformed so as to be pulled obliquely
upwardly as shown in Fig. 14. Thus, the reference resistance elements 63' and 64'
disposed at the central portion of the diaphragm 2 are deformed so as to be stretched,
while the carbon nanotube resistance elements 61 and 62 fixed at the peripheral edge
portion of the diaphragm 2 are subjected to compressive deformation in a direction
orthogonal to an axial direction of the carbon nanotube resistance elements 61 and
62, i.e., in a direction of small modulus of elasticity in response to deformation
of the peripheral edge portion of the diaphragm 2. Namely, a direction of change of
electric resistance of the carbon nanotube resistance elements 61 and 62 is opposite
to that of the reference resistance elements 63' and 64'.
[0038] Thus, potential difference produced between the output terminals 9a and 9b of the
bridge circuit becomes larger than that of the first embodiment. Namely, since a large-level
electrical signal can be obtained by the small deformation amount, the fluid pressure
can be detected at high sensitivity.
(Fourth embodiment)
[0039] Figs. 15 and 16 show an acceleration sensor according to a fourth embodiment of the
present invention. In the first to third embodiments, the mechanical deformation amount
sensor acts as the pressure sensor. On the other hand, in this embodiment, the mechanical
deformation amount sensor acts as the acceleration sensor. By performing micromachining
such as etching on a silicon substrate as shown in Fig. 15, an acceleration sensor
chip 20 is formed. This acceleration sensor chip 20. includes a frame-like support
portion 21 and a weight portion 22 whose one side is integrally attached to the support
portion 21 by a pair of parallel beam portions 23. The weight portion 22 is pivotally
provided in a space surrounded by the support portion 21. As shown in Fig. 16, a metallic
film. 24 is provided on an upper surface of the support portion 21 along an outer
peripheral portion of the acceleration sensor chip 20. An upper glass cap 26 formed,
on its underside, with a recess 25 enabling upward movement of the weight portion
22 is provided on an upside of the acceleration sensor chip 20. The underside of this
upper glass cap 26 is bonded to the outer peripheral portion of the upside of the
acceleration sensor chip 20 via the metallic film 24.
[0040] A lower glass cap 28 formed, on its upside, with a recess 27 enabling downward movement
of the weight portion 22 is secured to an underside of the acceleration sensor chip
20. An outer peripheral portion of an upside of the lower glass cap 28 is bonded to
the underside of the support portion 21 of the acceleration sensor chip 20 by anodic
bonding.
[0041] The carbon nanotube resistance elements 61 and 62 are fixed to the beam portions
23 acting as a deformation portion which is deformed by pivotal movement of the weight
portion 22. The carbon nanotube resistance elements 61 and 62 are disposed so as to
axially or longitudinally stride over the beam portions 23 and the weight portion
22 such that an axial direction of the carbon nanotube resistance elements 61 and
62 is orthogonal to a direction of deformation of the beam portions 23. Meanwhile,
the reference resistance elements 63 and 64 formed by carbon nanotubes are secured
to an upside of the weight portion 22 so as to axially extend orthogonally to the
axial direction of the carbon nanotube resistance elements 61 and 62. The resistance
elements 61 to 64 are fixed to the acceleration sensor chip 20 in the same manner
as the first embodiment. Meanwhile, although a metal wire for effecting bridge connection
of the resistance elements 61 to 64 in the same manner as Fig. 3 is formed on the
surface of the support portion 21, the weight portion 22 and the beam portions 23
and input and output electrodes of the bridge circuit are formed on the surface of
the support portion 21, these circuit components are abbreviated in Figs. 15 and 16.
In Fig. 16, stoppers 29 and 30 for restraining movement of the weight portion 22 are,
respectively, provided on the upper glass cap 26 and the lower glass cap 28.
[0042] If an acceleration is applied to the acceleration sensor in the direction of the
arrow Y as shown in Fig. 17, a force corresponding to the acceleration is applied
to the weight portion 22 so as to pivot the weight portion 22 as shown. By this pivotal
movement of the weight portion 22, the beam portions 23 for coupling the support portion
21 and the weight portion 22 with each other are subjected to deflective deformation
and thus, the carbon nanotube resistance elements 61 and 62 are also deformed in response
to this deflective deformation of the beam portions 23.
[0043] A deformation amount of the carbon nanotube resistance elements 61 and 62 corresponds
to a magnitude of the acceleration and electric resistance (electrical conductivity)
between opposite ends of the carbon nanotube resistance elements 61 and 62 changes
in response to this deformation amount. Thus, potential difference corresponding to
the change of electric resistance is produced between the output terminals 9a and
9b of the bridge circuit shown in Fig. 3. Namely, since magnitude of this potential
difference corresponds to magnitude of the acceleration applied to the weight portion
22, the acceleration can be detected from the potential difference.
(Fifth embodiment)
[0044] Figs. 18 and 19 show an acceleration sensor according to a fifth embodiment of the
present invention. In this embodiment, a step portion 23a is formed on an upside of
the beam portion 23 by setting a surface of the support portion 21 higher than that
of the weight portion 22 as shown in Figs. 18 and 19 and each of the carbon nanotube
resistance elements 61 and 62 is disposed and fixed so as to stride over the step
portion 23a from the surface of the support portion 21 to the surface of the weight
portion 22.
[0045] Namely, in the same manner as the step portion 12 of the second embodiment, large
change of electric resistance of the carbon nanotube resistance elements 61 and 62
is obtained upon deformation of the beam portions 23 in order to raise sensitivity.
Since a function of the step portion 23a is identical with that of the step portion
12 of the second embodiment, the description is abbreviated for the sake of brevity.
Meanwhile, since operation of the acceleration sensor at the time an acceleration
is applied thereto in the direction of the arrow. Y as shown in Fig. 20 is similar
to that of the fourth embodiment, the description is abbreviated for the sake of brevity.
(Sixth embodiment)
[0046] Figs. 21 and 22 show an acceleration sensor according to a sixth embodiment of the
present invention. In the acceleration sensors of the fourth and fifth embodiments,
the reference resistance elements 63 and 64 formed by the carbon nanotubes are provided
on the upside of the weight portion 22. In this embodiment, the reference resistance
elements 63' and 64' are fixed to the beam portions 23 as shown in Figs. 21 and 22
such that axes of the reference resistance elements 63' and 64' are orthogonal to
those of the carbon nanotube resistance elements 61 and 62. The bridge circuit shown
in Fig. 13 is constituted by the resistance elements 61, 62, 63' and 64' formed by
carbon nanotubes. Since other constructions of the acceleration sensor are similar
to those of the fourth embodiment, the description is abbreviated for the sake of
brevity.
[0047] The embodiments have been described above as concrete examples of the present invention.
However, it is needless to say that the present invention is not limited to these
embodiments but may be modified variously. For example, in case the reference resistance
elements are used in the above embodiments, the reference resistance elements may
be, needless to say, replaced by diffused resistors. Meanwhile, in the above embodiment,
the MEMS sensor employing the silicon substrate is recited as an example but may be
replaced by a sensor structure formed by a substrate made of another semiconductor
material. In the present invention, since the carbon nanotubes are used as the detection
elements, there is no restriction that a semiconductor substrate should be used as
the substrate as in a configuration based on piezoelectric resistance, so that a substrate
made of an insulating material such as glass can also be used.
[0048] Furthermore, the above embodiments are directed to the pressure sensor and the acceleration
sensor. However, it goes without saying that a tactile sensor for detecting contact
pressure, a sound wave sensor (microphone) for detecting air pressure, an ultrasonic
sensor, a sensor for detecting such pressure change of a human body as throbbing,
pulse, etc. upon change of pulsation by applying to the human body its portion deformable
by the pressure, etc. may be, needless to say, used as the mechanical deformation
amount sensor.
[0049] As is clear from the foregoing description, since the mechanical deformation amount
sensor of the present invention can detect, as an electrical signal based on change
of electrical conductivity of the carbon nanotube resistance elements, magnitude of
a physical quantity applied to the sensor structure, such a remarkable effect is gained
that by utilizing electrical characteristics of the carbon nanotube, the physical
quantity can be detected at higher sensitivity than prior art configurations employing,
for example, a piezoelectric resistance element.
1. A sensor for measuring a mechanical deformation amount of a deformation portion (2)
comprising:
a sensor structure (1; 20) which is formed in a semiconductor substrate or an insulating
substrate and integrally includes said deformation portion (2; 23) deformable, when
a physical quantity to be detected is applied to the sensor structure (1, 20), due
to the physical quantity, and
a support portion (1a ; 21) for supporting the deformation portion (2; 23);
a resistance element (61, 62) which is provided on the deformation portion (2; 23)
so as to be mechanically deformed in response to deformation of the deformation portion
(2; 23); and
a wiring pattern (7) which is formed in a pattern on the sensor structure
(1) so as to be connected to the resistance element (61, 62);
wherein a voltage is applied to the resistance element (61, 62) via the wiring pattern
(7) such that a change of electrical conductivity of the resistance element (61, 62)
upon mechanical deformation of the resistance element (61, 62) is fetched as an electrical
signal,
characterized in that
the resistance element (61, 62) is a carbon nanotube resistance element, and
that the carbon nanotube resistance element (61, 62) is formed by a plurality of the
single-wall carbon nanotubes which are arranged side by side and are electrically
connected to each other in parallel.
2. Sensor as claimed in Claim 1, wherein the deformation portion (2; 23) is so formed
as to be thinner than the support portion (1a; 21) and is deformed so as to be deflected
elastically when the physical quantity is applied to the sensor structure (1).
3. Sensor as claimed in Claim 1 or 2, wherein the sensor structure (1; 20) is a micro-electro-mechanical
systems (MEMS) sensor chip formed in a silicon substrate.
4. Sensor as claimed in one of the Claims 1 to 3, wherein the carbon nanotube resistance
element (61, 62) is provided on the deformation portion (2; 23) through an insulating
film (11).
5. Sensor as claimed in one of the Claims 1 to 4, wherein the carbon nanotube resistance
element (61, 62) is disposed such that a longitudinal direction of the carbon nanotube
resistance element (61, 62) is orthogonal to a direction of deformation of the deformation
portion (2; 23).
6. Sensor as claimed in one of the Claims 1 to 5, wherein the wiring pattern (7) has,
at its end portion connected to the carbon nanotube resistance element (61, 62), a
metal electrode (10) such that each of opposite end portions of the carbon nanotube
resistance element (61, 62) is covered by the metal electrode (10).
7. Sensor as claimed in one of the Claims 1 to 6, wherein a surface of the carbon nanotube
resistance element (61, 62) is covered by an insulating coating film (13).
8. Sensor as claimed in Claim 7, wherein the insulating coating film (13) is a passivation
film provided on a surface of the sensor structure (1).
9. Sensor as claimed in one of the Claims 1 to 8, wherein a step portion (12; 23a) is
formed on the deformation portion (2; 23) and the carbon nanotube resistance element
(61, 62) is provided on the deformation portion (2; 23) so as to stride over the step
portion (12; 23a).
10. Sensor as claimed in one of the Claims 1 to 9, wherein a reference resistance element
(63, 64) is provided at a portion (1a) of the sensor structure (1) other than the
deformation portion (2) and the reference resistance element (63, 64) and the carbon
nanotube resistance element (61, 62) are connected to each other by the wiring pattern
(7) so as to form a bridge circuit.
11. Sensor as claimed in one of the Claims 1 to 10, wherein the reference resistance element
(63, 64) is formed by a carbon nanotube.
12. Sensor as claimed in one of the Claims 1 to 11, wherein the sensor is an acceleration
sensor (20) having an acceleration as the physical quantity to be detected;
wherein the sensor structure (1) further includes a weight portion (22) integrally
coupled with the support portion (21) by the deformation portion (23).
13. Sensor as claimed in one of the Claims 1 to 11, wherein the sensor is a pressure sensor
having a fluid pressure as the physical quantity to be detected;
wherein in the sensor structure (1), the support portion (1a) is formed in a shape
of a frame and the deformation portion is formed by a diaphragm (2) occupying an inside
space of the frame of the support portion (1a) such that the diaphragm (2) bears the
fluid pressure.
14. Sensor as claimed in one of the Claims 13, wherein the carbon nanotube resistance
element (61, 62) is provided at a peripheral edge portion (E1) of the diaphragm (2).