| (19) |
 |
|
(11) |
EP 1 494 230 A3 |
| (12) |
EUROPEAN PATENT APPLICATION |
| (88) |
Date of publication A3: |
|
15.07.2009 Bulletin 2009/29 |
| (43) |
Date of publication A2: |
|
05.01.2005 Bulletin 2005/01 |
| (22) |
Date of filing: 02.07.2004 |
|
| (51) |
International Patent Classification (IPC):
|
|
| (84) |
Designated Contracting States: |
|
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PL PT RO SE SI SK TR
|
|
Designated Extension States: |
|
AL HR LT LV MK |
| (30) |
Priority: |
03.07.2003 JP 2003190746
03.10.2003 JP 2003345360
03.10.2003 JP 2003345361
|
| (71) |
Applicants: |
|
- MITSUBISHI MATERIALS CORPORATION
Chiyoda-ku,
Tokyo (JP)
- Samsung Electronics Co., Ltd.
Suwon-si, Gyeonggi-do (KR)
|
|
| (72) |
Inventors: |
|
- Nonaka, Sohei
12-6, Techno-Park
Sanda-shi
Hyogo (JP)
- Kinoshita, Kei
12-6, Techno-Park
Sanda-shi
Hyogo (JP)
- Mori, Satoru
12-6, Techno-Park
Sanda-shi
Hyogo (JP)
- Horii, Hideki
135-884 Seoul (KR)
- Ha, Yongho
445-902 Gyenggi-do (KR)
- Park, Jeonghee
445-763 Gyenggi-do (KR)
|
| (74) |
Representative: HOFFMANN EITLE |
|
Patent- und Rechtsanwälte
Arabellastraße 4
81925 München
81925 München (DE) |
|
| |
|
| (54) |
Phase change recording film having high electrical resistance and sputtering target
for forming phase change recording film |
(57) The present invention relates to a phase change recording film having high electrical
resistance, wherein the phase change recording film has a composition comprising,
by atom% (hereinafter, % means atom%): 15 to 30% of Ge; 15 to 25% of Sb; a total of
0.1 to 13% of one or two elements selected from the group consisting essentially of
Al and Si; and the balance of Te and inevitable impurities.
Furthermore, the present invention relates to a phase change recording film having
high electrical resistance, wherein the phase change recording film has a composition
comprising, by atom%: 15 to 30% of Ge; 15 to 30% of Sb; 0.2 to 8% of C; and the balance
of Te and inevitable impurities,
or 15 to 30% of Ge; 15 to 30% of Sb; 0.2 to 12% of B; and the balance of Te and inevitable
impurities,
or 15 to 30% of Ge; 15 to 30% of Sb; a total of 0.1 to 10% of at least one or two
elements selected from the group consisiting essentially of Ce, Pr, Nd, Pm, Sm, Eu,
Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and the balance of Te and inevitable impurities.
The present invention also relates to a sputtering target for forming the phase change
recording film.