BACKGROUND
[0001] The present invention relates generally to the field of memory and in particular
to a method of reading a register from a volatile memory module.
[0002] Portable electronic devices have become ubiquitous accoutrements to modem life. Two
modem trends in portable electronic devices are increased functionality and decreased
size. Increased functionality demands higher computing power and more memory. The
decreasing size of portable electronic devices places a premium on power consumption,
as smaller batteries can store and deliver less power. Thus, advances that increase
performance and decrease power consumption are advantageous for portable electronic
devices.
[0003] Most portable electronic devices include Dynamic Random Access Memory (DRAM) to store
instructions and data for a processor or other controller. DRAM is the most cost-effective
solid-state memory technology available. While the price per bit is lower for mass
storage technologies such as disk drives, the high access latency, high power consumption,
and high sensitivity to shock or vibration preclude the use of mass storage drives
in many portable electronic device applications.
[0004] Synchronous DRAM (SDRAM) offers both improved performance and simplified interface
design over conventional DRAM by aligning all control signals and data transfer cycles
to clock edges. Double data rate (DDR) SDRAM allows data transfers on both rising
and falling edges of the clock, providing still higher performance.
[0005] Most SDRAM modules include a mode register to store configurable parameters such
as CAS latency, burst length, and the like. As SDRAM technology increased in complexity
and configurability, many SDRAM modules added an extended mode register to store additional
configurable parameters such as write length, drive strength, and the like. Both the
mode register and extended mode register are write-only. That is, there is no provision
for a controller to read the contents of these registers. With the introduction of
the mode and extended registers, a DRAM module for the first time stored information
other than the data written to and read from the DRAM array. Consequently, a new data
transfer operation was required.
[0006] Many SDRAM modules include Mode Register Set (MRS) and Extended Mode Register Set
(EMRS) operations to load the registers with the desired parameters. These operations
are commonly implemented by simultaneously driving the CS, RAS, CAS, and WE control
signals low, selecting between the MRS and EMRS with bank address bits, and providing
the information to be written to the selected register on address lines A0 - A11.
In most implementations, all DRAM banks must be inactive at the time of the MRS or
EMRS command, and no further operation may be directed to the SDRAM module for a specified
minimum duration, such as six clock cycles. These restrictions do not adversely impact
the SDRAM performance, since due to the nature of the mode and extended mode registers,
they are written once upon initialization and never changed.
[0007] The third-generation Graphics Double Data Rate industry specification (GDDR3) provides
the ability to read information from an SDRAM module other than data stored in the
DRAM array. As one option during an EMRS operation, the SDRAM may output a vendor
code and version number on the data bus (EMRS write information is transmitted on
the address bus). All of the restrictions of the EMRS operation - that all banks be
idle and that the operation is followed by a minimum duration, such as six clock cycles,
of inactivity - must be observed. Due to the static nature of the information (vendor
ID and version number), it only needs to be read once, such as during initialization,
and the limitations of the EMRS operation do not significantly affect performance.
[0008] A basic aspect of DRAM operation is that the capacitive charge storing data at each
bit position must be periodically renewed to preserve the data state. The DRAM array
is refreshed by row; some SDRAM modules may refresh the same row in multiple DRAM
banks at the same time. Each row in the DRAM array must be refreshed within a specified
refresh period. The DRAM rows may be refreshed sequentially once per refresh period,
known as a burst refresh. However, this prevents access to the DRAM array for the
time necessary to cycle through all of the rows, and imposes a performance degradation.
Alternatively, refresh cycles directed to each row may be spread evenly throughout
the refresh period, interspersed with read and write data transfers. This is known
as distributed refresh. Distributed refresh is more commonly implemented, as it imposes
less of a performance penalty.
[0009] The total required refresh period, and hence the spacing of refresh cycles in a distributed
refresh operation, depends on the temperature of the DRAM array dye. As a general
rule of thumb, the refresh rate must be doubled for every 10° C increase in the DRAM
array die temperature. The refresh period specified for a SDRAM module is typically
that required by the DRAM at its highest anticipated operation temperature. Thus,
whenever the DRAM array die is at a lower temperature, the refresh period is longer,
and the distributed refresh cycles may be spaced further apart, thus reducing their
impact on DRAM read and write accesses. This would both improve processor performance
and reduce power consumption by eliminating unnecessary refresh activity.
[0010] Co-pending
U.S. Patent Application Serial No. 11/165,950 , filed on June 23 2005, assigned to the assignee of the present invention discloses a SDRAM module having
a temperature sensor. A controller, such as a processor, may periodically read the
output of the temperature sensor and calculate the actual minimum required refresh
rate. At least during initial operation - that is, before the SDRAM module stabilizes
at its operating temperature - the controller may periodically read the temperature
sensor, such as every four to six microseconds, to dynamically optimize the refresh
rate.
[0011] The output of a temperature sensor is one form of data read from a SDRAM module that
is not stored in the DRAM array. The only known means for reading such information
- "piggy backing" the read of vendor ID and version number on an EMRS operation, as
provided in the GDDR3 specification - imposes unacceptable performance penalties.
As described, in most implementations, all banks must be idle prior to the EMRS operation,
and no commands may be issued for many clock cycles after the EMRS operation. Ideally,
the read of data not stored in the DRAM array should be performed in a synchronous
data transfer that is substantially similar to a read operation directed to data that
is within the DRAM array. This would allow the read of information not stored in the
DRAM array to be seamlessly interspersed with reads and writes of data that is stored
in the DRAM array (i.e., normal DRAM accesses).
EP0797207 describes a semiconductor device comprising a mode register control circuit.
US2003/095455 describes a semiconductor integrated circuit.
US2003/0174568 describes a fuse read sequence for auto refresh power reduction.
US2002/0147949 describes a memory subsystem package with a memory controller interface ASIC and
a plurality of memory modules.
EP0851427 describes a memory system including an on chip temperature sensor for regulating
a refresh rate of a DRAM array.
US5982697 describes a method for initialising and reprogramming a control operation feature
of a memory device.
GILLINGHAM P ET AL: IEEE MICRO, IEEE SERVICE CENTRE, LOS ALAMITOS, CA, US, vol. 17,
no. 6, November 1997 (1997-11), pages 29-39, XP000726002 ISSN: 0272-1732 describes an, SLDRAM: HIGH-PERFORMANCE, OPEN-STANDARD MEMORY.
SUMMARY
[0012] According to the invention, there is provided the method of claim 1.
[0013] According to the invention, there is provided the SDRAM memory module of claim 12.
[0014] In one or more embodiments, data not stored in the DRAM array of a SDRAM module is
read from the SDRAM module in a synchronous data transfer. The data transfer, referred
to as register read command/operation, resembles a read command/operation directed
to data stored in the DRAM array in timing and operation. The register read command
is distinguished by a unique encoding of the SDRAM control signals and bank address
bits. In one embodiment, the register read command comprises the same control signal
states as a MSR or EMSR command, with the bank address set to a unique value, such
as 2'b10. The register read command may read only a single datum, or may utilize the
address bus to address a plurality of data not stored in the DRAM array. The register
read operation may be a burst lead, and the burst length may be defined in a variety
of ways.
[0015] One embodiments relates to a method of reading data from a SDRAM module, that is
not stored in a DRAM array. Control signals are output for a synchronous read of data
from a DRAM array with a unique encoding of control signals, and the data not stored
in a DRAM array are synchronously read
[0016] Another embodiment relates to an SDRAM memory module including a DRAM array and a
register. The module also includes control circuits operative to perform synchronous
data transfers with a controller and to read and write data from and to the DRAM array.
The control circuits are further operative to output to the controller, in a synchronous
data transfer, data not stored in the DRAM array.
BRIEF DESCRIPTION OF DRAWINGS
[0017] Figure 1 is a functional block diagram of a processor.
[0018] Figure 2 is a timing diagram of a register read operation.
[0019] Figure 3 is a timing diagram of a register read followed by a read.
[0020] Figure 4 is a timing diagram of a terminated register read burst followed by a write.
DETAILED DESCRIPTION
[0021] Figure 1 depicts a SDRAM memory module 100 and a controller 102. The controller may
comprise a processor, digital signal processor, micro controller, state machine, or
the like. The controller 102 directs operations to the SDRAM module 100 by control
signals Clock (CLK), Clock Enable (CKE), Chip Select (CS), Row Address Strobe (RAS),
Column Address Strobe (CAS), Write Enable (WE), and Data Qualifiers (DQM) as well
known in the art. The controller 102 provides a plurality of address lines to the
SDRAM module 100 and a bi-directional data bus connects the two. The SDRAM module
includes a DRAM array 104, which may be divided into a plurality of banks 106. The
DRAM array stores instructions and data, and is read from, written to, and refreshed
by control circuit 108, under the direction of the controller 102.
[0022] The SDRAM module 100 additionally includes a mode register 110 and extended mode
register 112. The SDRAM module 100 may additionally include identification information
114, such as vendor ID and version number. The identification information 114 may
be stored in a register; alternatively, it may be hardwired into the die.
[0023] The SDRAM module 100 additionally includes a temperature sensing circuit 116, including
one or more temperature sensors such as a thermister 118 disposed adjacent the DRAM
array 104 and operative to sense the temperature of the DRAM array dye. The contents
of the mode register 110 and extended mode register 112, the SDRAM module identification
114 and the output of the temperature sensor 116 are all examples of data that may
be read from the SDRAM module 100, but that are not stored in the DRAM array 104.
According to one or more embodiments, an operation is defined that effects a synchronized
read of data not stored in the DRAM array 104.
[0024] SDRAM operations are defined by the state of the control signals applied to the SDRAM
module 100 by the controller 102 on a rising clock edge. Common SDRAM operations are
defined in the truth table below, where X indicates a "don't care" state.
Table 1: Representative SDRAM Commands and Control Signals
CS |
RAS |
CAS |
WE |
ADDR |
BANK |
Command |
H |
X |
X |
X |
X |
X |
Command Inhibit (SDRAM not selected) |
L |
H |
H |
H |
X |
X |
NOP |
L |
L |
H |
H |
row |
bank |
Active (row select) |
L |
H |
L |
H |
col. |
bank |
Read (data in DRAM array) |
L |
H |
L |
L |
col. |
bank |
Write (data in DRAM array) |
L |
H |
H |
L |
X |
X |
Burst Terminate |
L |
L |
H |
L |
row |
bank |
Precharge (deactivate row) |
L |
L |
L |
H |
X |
X |
Auto Refresh or Self Refresh |
L |
L |
L |
L |
write data |
2'b00 |
Mode Register Set (MSR) |
L |
L |
L |
L |
write data |
2'b01 |
Extended Mode Register Set (EMSR) and optional Vendor ID and version read for GDDR3-compliant
SDRAM. |
[0025] According to one or more embodiments, the following operation is defined to read
data not stored in the DRAM array:
Table 2: Single Register Read Command and Control Signals
CS |
RAS |
CAS |
WE |
ADDR |
BANK |
Command |
L |
L |
L |
L |
X |
2'b10 |
Register Read |
[0026] The operation to read data not stored in DRAM array is referred to herein as a "register
read," although the operation is not limited to reading data from an actual register.
For example, the output of the temperature sensing circuit 116 and the hardwired SDRAM
module ID information 114 may be read with a register read command, although neither
datum may reside in an actual register on the SDRAM module 100.
[0027] In one embodiment, in a register read operation, the SDRAM module ID information
114 is driven on data bus bits DQ[3:0]. The SDRAM module ID information 114 may be
in the form of the Vendor ID as specified in the GDDR3 standard. The ability to read
the Vendor ID may be particularly useful in "stacked chip" applications, wherein two
or more semiconductor dice are stacked with intervening dielectric layers, with wirebonded
interconnections, and packaged in the same integrated circuit housing. For example,
a processor and a SDRAM die may be stacked in a package. In these applications, if
the vendor is not known, it may be impossible to ascertain without being able to read
the information electronically from the SDRAM device itself.
[0028] In one embodiment, information generated by the temperature sensing circuit 116 is
driven on data bus bits DQ[10:8]. In one embodiment, the temperature information may
be expressed as a refresh rate multiplier, as defined in the following table.
Table 3: Representative Refresh Rate Multiplier Encoding
DQ[10:8] |
Refresh Rate Multiplier |
111 |
Out of Range |
110 |
4x |
101 |
2x |
000 |
1x |
001 |
1/2x |
010 |
1/4x |
011 |
Out of Range |
[0029] The SDRAM module ID information 114 and output of the temperature sensing circuit
116 may be simultaneously driven on the data bus during a register read operation.
Note that the address bus is not utilized in this embodiment of the register read
command; the read is always directed to a single datum, such as a read-only status
register.
[0030] In another embodiment, the read register command is not limited to reading a single
datum. In general, the read register command may be used to read any data from the
SDRAM module 100 that is not stored in the DRAM array 104. This may include the output
of the temperature sensing circuit 116, the SDRAM module ID information 114, the contents
of the mode register 110 or extended mode register 112, or other registers or non-registered
data sources that may be added to an SDRAM module 100 in the future. In this embodiment,
at least some bits of the address bus are not considered "don't care" signals, but
rather transmit the address of the source of the read register command data. The following
table depicts the control signals for the general case of a register read command.
Table 4: General Register Read Command and Control Signals
CS |
RAS |
CAS |
WE |
ADDR |
BANK |
Command |
L |
L |
L |
L |
non-DRAM addr |
2'b10 |
Register read of data not stored in the DRAM array, selected by the address non-DRAM addr |
[0031] Regardless of how many non-DRAM array data sources the register read command may
access, a register read proceeds in all cases as a synchronous data transfer from
the SDRAM module 100 to the controller 102. As used herein, a "synchronous data transfer"
is a SDRAM data transfer that complies with the timing parameters and restrictions
of a conventional SDRAM data transfers of data stored in a DRAM array. As used herein,
"synchronously reading" data means reading data in a synchronous data transfer. The
register read operation complies with normal read operation pin level timings. That
is, the timing and restrictions of register read operation preceding and following
normal read and write operations are the same as those defined for normal read operation,
as summarized in the following table.
Table 5: Comparison of Register Read and DRAM Array Read Timing and Restrictions
Register Read Operation Combinations |
Timing and Restrictions Same As... |
read -> register read |
read -> read |
register read -> read |
read -> read |
write -> register read |
write -> read |
register read -> write |
read -> write |
[0032] Figure 2 is a timing diagram showing a single register read operation for a DDR SDRAM
module 100. In this case, the CAS latency is 2.5 and the burst length is two. The
read register command is presented by the controller 102 to the SDRAM module 100 by
placing the CS, RAS, CAS, and WE control signals in the state depicted above in Tables
2 and 4 at the rising edge of clock cycle two, and also placing the value 2'b10 on
the bank address bits. In the embodiment that register read operation may read more
than a single status register, an address is additionally driven on the address bus
at this time. Following a delay determined by the CAS latency value stored in the
mode register 110, the SDRAM module 100 drives the data on the data bus, and drives
the data strobe DQS. In the embodiment depicted in Fig. 2, the register read operation
is a burst read, the burst length of which is determined by the burst length parameter
stored in the mode register 110. In other embodiments, the burst length may be determined
in a variety of ways.
[0033] In one embodiment, the register read operation has a default burst length, independent
of the burst length parameter stored in the mode register 110. In another embodiment,
a register read burst length parameter is defined, and the value written to the mode
register 110, extended mode register 112, or other mode register on the SDRAM module
100. Register read operations are then always the stored burst length. In another
embodiment, the burst length for each register read operation may be communicated
to the SDRAM module 100 by the controller 102 at the time of the read register command,
by encoding a burst length value on one or more unused control signals, such as for
example high order address bits.
[0034] Figures 3 and 4 are representative timing diagrams demonstrating how the register
read operation may be seamlessly integrated into regular SDRAM read and write operations.
Figure 3 depicts a register read followed by a regular read, where both of the read
operations have a burst length of two. In this case, the CAS latency is two. Two cycles
of non-DRAM data (that is, data read from the SDRAM module 100 that is not stored
in the DRAM array 104) are followed by two cycles of data read from the DRAM array
104. In the embodiment that the register read operation accesses only one location
(i.e. the address bus is unused), the second transfer of non-DRAM data (or subsequent
transfers, for a longer burst length) may be a replica of the first transfer. Alternatively,
the second and any subsequent burst transfers may be 0's, or any other predetermined
value.
[0035] Figure 4 depicts a register read operation wherein the burst transfer is terminated
and followed by a write of data to the DRAM array 104. In this case, the register
read operation has a CAS length of three. The burst length is at least two. The register
read burst is terminated at a length of two by a burst terminate command following
the register read command. A write of data to the DRAM array 104 follows the transfer
of data read from the SDRAM module 100 that was not stored in the DRAM array 104.
The controller 102 drives data to be written to the DRAM array 104 on the DQ bus according
to the timing parameter t
DQSS, in the same manner as if the write followed a read of data from the DRAM array 104.
[0036] The examples depicted in Figures 3 and 4 are representative only. In general, the
register read operation conforms in all respects (other than the state of control
signals and bank address bits at the time the command is issued) to a conventional
SDRAM read operation. Accordingly, data not stored in the DRAM array 104 may be read
from the SDRAM module 100 at any time, with minimal impact on reads and writes from
and to the DRAM array 104.
[0037] The term "module" is used herein in a general sense to denote a functional SDRAM
unit that includes a DRAM array 104 and control circuits 108. In particular, the term
"module" is not restricted to industry standard identifiers that include the term,
such as Single In-line Memory Module (SIMM) or Dual In-Line Memory Module (DIMM).
[0038] Although the present invention has been described herein with respect to particular
features, aspects and embodiments thereof, it will be apparant that numerous variations,
modifications, and other embodiments are possible within the broad scope of the present
invention, and accordingly, all variations, modifications and embodiments are to be
regarded as being within the scope of the invention. The present embodiments are therefore
to be construed in all aspects all illustrative and not restrictive and all changes
coming within the scope of the appended claims.
1. A method of reading data from a SDRAM (Synchronous Dynamic Access Ram) module (100),
which data is not stored in a DRAM (Dynamic Access Ram) array (104) on the module
(100), wherein each of a plurality of available SDRAM commands for controlling SDRAM
operations is defined by the state of control signals applied to the SDRAM module
(100), the method comprising:
providing a command for a synchronous read of the data which is not stored in the
DRAM array (104), the command comprising an encoding of control signals unique to
the operation of synchronously reading of the data which is not stored in the DRAM
array (104); and
synchronously reading the data nut stored in a DRAM array (104) in response to the
command, the method further comprising;
reading or writing data from or to a DRAM array (104) on the module (100), starting
in the close cycle immediately after the cycle in which the reading of the data not
stored in a DRAM array (104) ends.
2. The method of claim 1 wherein synchronously reading the data not stored in a DRAM
array (104) comprises synchronously reading the data not stored in a DRAM array (100)
when a DRAM row is open.
3. The method of claim 1 wherein the data not stored in a DRAM array (104) comprises
the contents of a register (110, 112).
4. The method of claim 3 wherein the register (110, 112) is a MRS (110) (Mode Register
Set) or EMRS (112) (Extended Mode Register Set).
5. The method of claim 1 wherein the data not stored in a DRAM array (104) comprises
the output of a sensor (116, 118).
6. The method of claim 5 wherein the sensor (116, 118) is a temperature sensor and wherein
the data not stored in a DRAM array (104) is indicative of the internal temperature
of the memory module (100).
7. The method of claim 6, wherein the data not stored in a DRAM array (104) is a refresh
rate multiplier.
8. The method of claim 6, further comprising adjusting a refresh rate in response to
the temperature of the memory module (100).
9. The method of claim 1 wherein the data not stored in a DRAM array (104) is hardwired
in the memory module (100).
10. The method of claim 1 wherein the unique encoding of control signals is the encoding
for a write of a register, with a bank address distinct from any bank address defined
for a register write.
11. The method of claim 10 wherein the RAS, CAS, and WE control signals are low, and wherein
the bank address is 2'b10.
12. An SDRAM memory module (100), comprising:
a DRAM array (104);
data not stored in the DRAM array (104); and
control circuits operative to perform synchronous data transfers with a controller
(102) and to read and write data from and to the DRAM array (104), the control circuits
further operative to output to the controller (102), in a synchronous data transfer
in accordance with the method of any of claims 1 to 11. data not stored in the DRAM
array (104).
1. Ein Verfahren zum Lesen von Daten von einem SDRAM (Synchronous Dynamic Access Ram
/ Synchrones dynamisches Zugriffs Ram) - Modul (100), dessen Daten nicht in einem
DRAM (Dynamic Access Ram /Dynamisches Zugriffs Ram)- Feld (104) in dem Modul (100)
gespeichert sind, wobei jedes der Vielzahl von verfügbaren SDRAM Befehlen zur Steuerung
von SDRAM Operationen durch den Zustand von Steuersignalen definiert ist, die dem
SDRAM Modul (100) angelegt werden, was folgendes aufweist:
Vorsehen eines Befehls für ein synchrones Lesen der Daten, die nicht in dem DRAM-
Feld (104) gespeichert sind, wobei der Befehl das Kodieren von Steuersignalen aufweist,
die für die Operation des synchronen Lesens von den Daten, die nicht in dem DRAM-
Feld (104) gespeichert sind, einzigartig sind.
Synchrones Lesen der Daten, die nicht in einem DRAM- Feld (104) gespeichert sind,
ansprechend auf den Befehl, wobei das Verfahren ferner folgendes aufweist:
Lesen oder Schreiben von Daten von oder in ein DRAM- Feld (104) in dem Modul (100),
beginnend in dem Taktzyklus, der unmittelbar nach dem Zyklus, in dem das Lesen der
Daten, die nicht in einem DRAM- Feld (104) gespeichert sind, endet.
2. Verfahren nach Anspruch 1, wobei synchrones Lesen der Daten, die nicht in einem DRAM-
Feld (104) gespeichert sind, synchrones Lesen der Daten, die nicht in einem DRAM-
Feld (100) gespeichert sind aufweist, wenn eine DRAM Zeile geöffnet ist.
3. Verfahren nach Anspruch 1, wobei die Daten, die nicht in einem DRAM- Feld (104) gespeichert
sind, den Inhalt eines Registers (110,112) umfassen.
4. Verfahren nach Anspruch 3, wobei das Register (110,112) ein MRS (110), (Mode Register
Satz) oder EMRS (112) (Erweiterter Mode Register Satz) ist.
5. Verfahren nach Anspruch 1, wobei die Daten, die nicht in einem DRAM- Feld (104) gespeichert
sind, die Ausgabe eines Sensors (116, 118) aufweisen.
6. Verfahren nach Anspruch 5, wobei der Sensor (116, 118) ein Temperatursensor ist und
wobei die Daten, die nicht in einem DRAM- Feld (104) gespeichert sind, die Temperatur
des Speichermoduls (100) anzeigen.
7. Verfahren nach Anspruch 6, wobei die Daten, die nicht in einem DRAM- Feld (104) gespeichert
sind, ein Auffrischungsratenmultiplikator sind.
8. Verfahren nach Anspruch 6, welches weiterhin das Anpassen einer Auffrischungsrate
ansprechend auf die Temperatur des Speichermoduls (100) aufweist.
9. Verfahren nach Anspruch 1, wobei die Daten, die nicht in einem DRAM- Feld (104) gespeichert
sind, in dem Speichermodul (100) fest verdrahtet sind.
10. Verfahren nach Anspruch 1, wobei das einzigartige Kodieren von Steuersignalen das
Kodieren für ein Schreiben auf ein Register ist mit einer Bankadresse ist, die unterschiedlich
zu jeder Bankadresse ist, die zum Registerschreiben definiert ist.
11. Verfahren nach Anspruch 10, wobei die RAS, CAS, und WE Steuersignale niedrig, low,
sind, und wobei die Bankadresse 2b10 ist.
12. Ein SDRAM Speicher Modul (100), das folgendes aufweist:
ein DRAM Feld (104);
Daten, die nicht in dem DRAM- Feld (104) gespeichert sind; und
Steuerschaltungen, zum Durchführen von synchronen Datentransfers mit einer Steuereinrichtung
(102) und zum Lesen und Schreiben von Daten aus dem und in das DRAM- Feld (104), wobei
die Steuerschaltungen ferner zur Ausgabe von Daten geeignet sind, die nicht in dem
DRAM- Feld (104) gespeichert sind, an die Steuereinrichtung (102), und zwar in einem
synchronen Datentransfer gemäß den Verfahren nach einem der Ansprüche 1 bis 11.
1. Procédé de lecture de données dans un module de mémoire dynamique synchrone (SDRAM)
(100), lesquelles données ne sont pas stockées dans une matrice de mémoire dynamique
(DRAM) (104) présente sur le module (100), dans lequel chacune d'une pluralité de
commandes SDRAM disponibles pour commander des opérations SDRAM est définie par l'état
de signaux de commande appliqués au module SDRAM (100), le procédé comprenant :
la fourniture d'une commande pour une lecture synchrone des données qui ne sont pas
stockées dans la matrice DRAM (104), la commande comprenant un codage de signaux de
commande propres à l'opération de lecture synchrone des données qui ne sont pas stockées
dans la matrice DRAM (104) ; et
la lecture synchrone des données non stockées dans une matrice DRAM (104) en réponse
à la commande, le procédé comprenant en outre :
la lecture ou l'écriture de données de ou vers une matrice DRAM (104) présente sur
le module (100), en commençant au cycle d'horloge qui suit Immédiatement le cycle
dans lequel se termine la lecture des données non stockées dans une matrice DRAM (104).
2. Procédé selon la revendication 1, dans lequel la lecture synchrone des données non
stockées dans une matrice DRAM (104) comprend la lecture synchrone des données non
stockées dans une matrice DRAM (100) quand une rangée DRAM est ouverte.
3. Procédé selon la revendication 1, dans lequel les données non stockées dans une matrice
DRAM (104) comprennent le contenu d'un registre (110, 112).
4. Procédé selon la revendication 3, dans lequel le registre (110, 112) est un ensemble
de registres de mode (MRS) (110) ou un ensemble de registres de mode étendu (EMRS)
(112).
5. Procédé selon la revendication 1, dans lequel les données non stockées dans une matrice
DRAM (104) comprennent la sortie d'un capteur (116, 118).
6. Procédé selon la revendication 5, dans lequel le capteur (116, 118) est un capteur
de température et dans lequel les données non stockées dans une matrice DRAM (104)
représentent la température interne du module de mémoire (100).
7. Procédé selon la revendication 6, dans lequel la donnée non stockée dans une matrice
DRAM (104) est un multiplicateur de fréquence de rafraîchissement.
8. Procédé selon la revendication 6, comprenant en outre le réglage d'une fréquence de
rafraîchissement en réponse à la température du module de mémoire (100).
9. Procédé selon la revendication 1, dans lequel les données non stockées dans une matrice
DRAM (104) sont câblées dans le module de mémoire (100).
10. Procédé selon la revendication 1, dans lequel le codage propre de signaux de commande
est le codage pour une écriture d'un registre, avec une adresse de banque distincte
de toute adresse de banque définie pour une écriture de registre.
11. Procédé selon la revendication 10, dans lequel les signaux de commande RAS, CAS et
WE sont au niveau bas, et dans lequel l'adresse de banque est 2'b10.
12. Module de mémoire SDRAM (100), comprenant :
une matrice DRAM (104) ;
des données non stockées dans la matrice DRAM (104) ; et
des circuits de commande aptes à effectuer des transferts de données synchrones avec
un contrôleur (102) et à lire et écrire des données de et vers la matrice DRAM (104),
les circuits de commande étant en outre aptes à transmettre au contrôleur (102), dans
un transfert de données synchrone conforme au procédé de l'une quelconque des revendications
1 à 11, des données non stockées dans la matrice DRAM (104).