| (19) |
 |
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(11) |
EP 2 378 571 A3 |
| (12) |
EUROPEAN PATENT APPLICATION |
| (88) |
Date of publication A3: |
|
09.04.2014 Bulletin 2014/15 |
| (43) |
Date of publication A2: |
|
19.10.2011 Bulletin 2011/42 |
| (22) |
Date of filing: 09.02.2011 |
|
| (51) |
International Patent Classification (IPC):
|
|
| (84) |
Designated Contracting States: |
|
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL
NO PL PT RO RS SE SI SK SM TR |
|
Designated Extension States: |
|
BA ME |
| (30) |
Priority: |
15.04.2010 KR 20100034862
|
| (71) |
Applicant: LG Innotek Co., Ltd. |
|
Seoul 100-714 (KR) |
|
| (72) |
Inventors: |
|
- Kim, Sung Kyoon
SEOUL 100-714 (KR)
- Lim, Woo Sik
100-714, SEOUL (KR)
- Kim, Myeong Soo
100-714, SEOUL (KR)
- Choo, Sung Ho
100-714, SEOUL (KR)
- Na, Min Gyu
100-714, SEOUL (KR)
|
| (74) |
Representative: Cabinet Plasseraud |
|
52, rue de la Victoire
75440 Paris Cedex 09
75440 Paris Cedex 09 (FR) |
|
| |
|
| (54) |
Light emitting device, light emitting device package, and lighting system |
(57) Provided are a light emitting device (100), a light emitting device package, and
a lighting system. The light emitting device includes a substrate (101), a light emitting
structure layer (125), a second electrode (150), a first electrode (165), a contact
portion (162), and a first electrode layer (165). The first electrode is disposed
in the substrate from a lower part of the substrate to a lower part of a first conductive
type semiconductor layer in a region under an active layer (115). The contact portion
is wider than the first electrode and makes contact with the lower part of the first
conductive type semiconductor layer. The first electrode layer is disposed under the
substrate and connected to the first electrode.